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81.发明申请
公开(公告)号：WO2009117287A3
公开(公告)日：2009-09-24
申请号：PCT/US2009/036763
申请日：2009-03-11
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. , ZUKAUSKAS, Arturas , VAICEKAUSKAS, Rimantas , IVANAUSKAS, Feliksas , VAITKEVICIUS, Henrikas , SHUR, Michael
Inventor： ZUKAUSKAS, Arturas , VAICEKAUSKAS, Rimantas , IVANAUSKAS, Feliksas , VAITKEVICIUS, Henrikas , SHUR, Michael
Abstract: The invention relates to phosphor-conversion (PC) sources of white light, which are composed of at least two groups of emitters, such as blue electroluminescent light-emitting diodes (LEDs) and wide-band (WB) or narrow-band (NB) phosphors that partially absorb and convert the flux generated by the LEDs to other wavelengths, and to improving the quality of the white light emitted by such light sources. In particular, embodiments of the present invention describe new 3-4 component combinations of peak wavelengths and bandwidths for white PC LEDs with partial conversion. These combinations are used to provide spectral power distributions that enable lighting with a considerable portion of a high number of spectrophotomethcally calibrated colors rendered almost indistinguishably from a blackbody radiator or daylight illuminant, and which differ from distributions optimized using standard color-rendering assessment procedures based on a small number of test samples.
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82.发明申请SEMICONDUCTOR DEVICE HAVING COMPOSITE CONTACT AND THE MANUFACTURING THEREOF 审中-公开具有复合接触件的半导体器件及其制造方法
公开(公告)号：WO2008103699A1
公开(公告)日：2008-08-28
申请号：PCT/US2008/054368
申请日：2008-02-20
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. , SIMIN, Grigory , SHUR, Michael , GASKA, Remigijus
Inventor： SIMIN, Grigory , SHUR, Michael , GASKA, Remigijus
CPC classification number: H01L27/0811 , H01L29/41708 , H01L29/42304
Abstract: A composite contact for a semiconductor device includes a DC conducting electrode that is attached to a semiconductor layer in the device, and a capacitive electrode that is partially over the DC conducting electrode and extends beyond the DC conducting electrode. A method of fabricating a semiconductor device with a composite contact includes forming the composite contact to a semiconductor layer in a semiconductor structure. The composite contact is formed by forming a DC conducting electrode attached to a semiconductor layer in a semiconductor structure and forming a capacitive electrode that is partially over the DC conducting electrode and extends beyond the DC conducting electrode. The composite contact provides a combined resistive-capacitive coupling to the semiconductor layer. As a result, a contact impedance is reduced when the corresponding semiconductor device is operated at high frequencies.
Abstract translation: 用于半导体器件的复合触点包括附着到器件中的半导体层的直流导电电极和部分地在直流导电电极上延伸超过直流导电电极的电容电极。 制造具有复合触点的半导体器件的方法包括在半导体结构中形成复合触点到半导体层。 通过在半导体结构中形成附着到半导体层的直流导电电极形成复合触点，并形成部分在直流导电电极上并延伸超出直流导电电极的电容电极。 复合触点提供与半导体层的组合的电阻 - 电容耦合。 结果，当对应的半导体器件以高频率操作时，接触阻抗减小。
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公开(公告)号：WO2008083128A1
公开(公告)日：2008-07-10
申请号：PCT/US2007/088772
申请日：2007-12-24
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. , KOUDYMOV, Alexei , SHUR, Michael
Inventor： KOUDYMOV, Alexei , SHUR, Michael
CPC classification number: H03F3/2178 , H03F3/189
Abstract: A two-stage amplifier is provided, which in the first stage, a first amplifier generates a non-linear square wave based on a harmonic input. The non-linear square wave has the same frequency as the harmonic input and is provided as an input to the second stage, in which a second amplifier generates an amplified harmonic output. The first amplifier and/or second amplifier can comprise a group-ll nitride-based Heterostructure Field Effect Transistor (HFET). Additionally, the first amplifier can comprise a multi-harmonic Class F amplifier and the second amplifier can comprise a Class E amplifier.
Abstract translation: 提供了两级放大器，其在第一级中基于谐波输入产生非线性方波。 非线性方波具有与谐波输入相同的频率，并被提供作为第二级的输入，其中第二放大器产生放大的谐波输出。 第一放大器和/或第二放大器可以包括基于组14的氮化物基异质结场效应晶体管（HFET）。 此外，第一放大器可以包括多谐波F类放大器，并且第二放大器可以包括E类放大器。
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84.发明申请
公开(公告)号：WO2018062885A1
公开(公告)日：2018-04-05
申请号：PCT/KR2017/010790
申请日：2017-09-28
Applicant: SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.
Abstract translation: 描述了用于控制光敏对象的表面上的紫外线强度的方法。 方面涉及使用包括紫外线A和紫外线B辐射的波长范围的紫外线辐射来照射表面。 光传感器测量表面处的光强度，其中每个传感器测量对应于从至少一个源发射的波长范围的波长范围内的光强度。 控制器通过根据光强度测量调整光源的功率来控制表面上的光强度。 控制器使用光强度测量来确定每个源是否以具有针对表面的预定强度值的可接受变化内的强度照亮表面。 控制器根据偏差调整光源的功率，以确保光线在表面上的最佳分布。
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公开(公告)号：WO2018044045A1
公开(公告)日：2018-03-08
申请号：PCT/KR2017/009437
申请日：2017-08-29
Applicant: SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , DOBRINSKY, Alexander , SHATALOV, Maxim S. , BARBER III, Arthur Peter
Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.
Abstract translation: 描述了用于控制光敏对象的曝光的方法。 这种方法的一些方面涉及使用第一组辐射源来用可见辐射和红外辐射照射物体。 第二组辐射源光点用具有一定波长范围的目标紫外辐射在一组位置照射物体。 辐射传感器检测从物体反射的辐射，并且环境条件传感器在辐射期间检测物体所处的环境条件。 控制器根据针对各种环境条件指定的预定最优照射设置来控制第一组放射线源和第二组放射线源对光敏对象的照射。 另外，控制器根据由各种传感器获得的测量结果调整第一和第二组辐射源的辐照设置。
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Patent Agency Ranking
公开(公告)号：WO2018022724A3
公开(公告)日：2018-02-01
申请号：PCT/US2017/043896
申请日：2017-07-26
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. , SEOUL VIOSYS CO., LTD.
Inventor： DOBRINSKY, Alexander , SHUR, Michael , BARBER III, Arthur Peter , SHATALOV, Maxim, S.
Abstract: A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet radiation in an ultraviolet range of approximately 260 nanometers to approximately 310 nanometers to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.
Abstract translation: 描述了用于控制栽培区域中的霉菌的解决方案。 该解决方案可以包括一组紫外线源，其被配置为发射紫外线范围为大约260纳米至大约310纳米的紫外线辐射，以破坏存在于植物或地面上的霉菌。 可以使用一组传感器来获取植物的至少一个植物表面的植物数据，该植物数据可以被处理以确定在至少一个植物表面上存在霉变。 其他功能可以包括进一步影响植物的生长环境。 可以实施反馈过程以改善增长环境的一个或多个方面。
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公开(公告)号：WO2017176083A1
公开(公告)日：2017-10-12
申请号：PCT/KR2017/003809
申请日：2017-04-07
Applicant: SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： DOBRINSKY, Alexander , SHUR, Michael , LAKIOS, Emmanuel
Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.
Abstract translation: 提供漫射紫外照明器。 照明器可以包括反射镜和位于反射镜的焦点附近的一组紫外辐射源。 来自该组紫外线辐射源的紫外辐射被导向位于照明器附近的反射表面。 反射表面可以漫射地反射至少30％的紫外辐射，并且漫射的紫外辐射可以在朗伯分布的至少40％内。 一组光学元件可以位于照明器和反射表面之间，以便将紫外线辐射导向至少50％的反射表面。
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公开(公告)号：WO2017171463A1
公开(公告)日：2017-10-05
申请号：PCT/KR2017/003543
申请日：2017-03-31
Applicant: SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： BILENKO, Yuri , SHUR, Michael , DOBRINSKY, Alexander
Abstract: An adjustable multi-wavelength lamp is described. The lamp can include a plurality of emitters. The emitters can include at least one ultraviolet emitter, at least one visible light emitter, and at least one infrared emitter. The lamp can include a control system for controlling operation of the plurality of emitters. The control system can be configured to selectively deliver power to any combination of one or more of the plurality of emitters to generate light approximating a target spectral distribution of intensity.
Abstract translation: 描述了一种可调节的多波长灯。 该灯可以包括多个发射器。 发射器可以包括至少一个紫外发射器，至少一个可见光发射器和至少一个红外发射器。 灯可以包括用于控制多个发射器的操作的控制系统。 控制系统可以被配置为选择性地将功率输送到多个发射器中的一个或多个发射器的任何组合以产生接近强度的目标光谱分布的光。
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公开(公告)号：WO2017040750A1
公开(公告)日：2017-03-09
申请号：PCT/US2016/049839
申请日：2016-09-01
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： DOBRINSKY, Alexander , SHUR, Michael
IPC: C02F1/32
CPC classification number: C02F1/325 , C02F1/725 , C02F1/76 , C02F1/78 , C02F2201/3227 , C02F2201/326 , C02F2201/328 , C02F2209/005 , C02F2209/11 , C02F2209/40 , C02F2301/022 , C02F2301/024 , C02F2305/10
Abstract: A fluid treatment system and method of treating fluid is described. The fluid treatment system can include a fluid transparency meter, which acquires data corresponding to an ultraviolet transparency of the fluid and a disinfection chamber within which a set of ultraviolet sources emit ultraviolet light onto the fluid located therein. The treatment system can include various features for mixing the fluid and/or recirculating the fluid for multiple ultraviolet light doses. A control system can manage a flow of the fluid through the fluid treatment system based on a disinfection dose delivered to the fluid.
Abstract translation: 描述了流体处理系统和处理流体的方法。 流体处理系统可以包括流体透明度计，其获取对应于流体的紫外线透明度的数据和消毒室，其中一组紫外线源将紫外光发射到位于其中的流体上。 处理系统可以包括用于混合流体的各种特征和/或用于多个紫外光剂量的再循环流体。 控制系统可以基于递送到流体的消毒剂量来管理流体通过流体处理系统的流动。
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公开(公告)号：WO2016197077A1
公开(公告)日：2016-12-08
申请号：PCT/US2016/035939
申请日：2016-06-05
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , DOBRINSKY, Alexander
CPC classification number: H01L33/44 , H01L21/02458 , H01L21/0254 , H01L21/02587 , H01L21/02664 , H01L29/0657 , H01L29/2003 , H01L29/778 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/382
Abstract: A solution for fabricating a device is described. The solution can include fabricating a heterostructure for the device, which includes at least one stress controlling layer. The stress controlling layer can include one or more attributes varies as a function of a lateral position based on a target variation of stresses in a semiconductor layer located directly under the stress controlling layer. Embodiments are further directed to a heterostructure including at least one stress controlling layer and a device including the heterostructure.
Abstract translation: 描述了用于制造装置的解决方案。 解决方案可以包括制造用于器件的异质结构，其包括至少一个应力控制层。 基于位于应力控制层下方的半导体层中的应力的目标变化，应力控制层可以包括作为横向位置的函数而变化的一个或多个属性。 实施例还涉及包括至少一个应力控制层和包括异质结构的器件的异质结构。
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