公开(公告)号：DE69835999D1

公开(公告)日：2006-11-09

申请号：DE69835999

申请日：1998-12-23

Applicant: CANON KK

Inventor： SAKURAI KATSUHITO ,  SUGAWA SHIGETOSHI ,  UENO ISAMU ,  OGAWA KATSUHISA ,  KOIZUMI TORU ,  KOCHI TETSUNOBU ,  HIYAMA HIROKI

IPC: H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/04 ,  H04N9/07

Abstract: A solid state image pickup device has a drive unit with an all pixel drive mode for reading all pixels in a horizontal direction and a pixel skip drive mode for reading pixels in the horizontal direction by skipping some pixels, and a plurality of read-out systems for reading pixels. In the all pixel drive mode, signals of pixels are divisionally read by the plurality of read-out systems, and in the pixel skip drive mode, signals of pixels are read by one of the plurality of read-out systems. In this manner, in the pixel skip drive mode, the power consumption can be reduced and a difference between output signal levels to be caused by a variation in characteristics of elements of the read-out system can be suppressed.

公开(公告)号：DE69818790D1

公开(公告)日：2003-11-13

申请号：DE69818790

申请日：1998-12-23

Applicant: CANON KK

Inventor： KOCHI TETSUNOBU ,  UENO ISAMU ,  KOIZUMI TORU ,  HIYAMA HIROKI ,  SUGAWA SHIGETOSHI ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO

IPC: H04N5/335 ,  H04N5/341 ,  H04N5/345 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/376 ,  H04N5/378 ,  H04N3/15

Abstract: In a solid state image pickup apparatus having a plurality of photoelectric conversion elements including a standard signal outputting photoelectric conversion element group for outputting standard signals and an effective signal outputting photoelectric conversion element group for outputting effective signals, a scanner circuit for sequentially reading signals from the photoelectric elements, and a selector circuit for selectively reading an optional element group in the effective signal outputting photoelectric conversion element group, the scanner circuit reads both the standard signal outputting photoelectric conversion element group and the optional element group in the effective signal outputting photoelectric conversion element group selected by the selector circuit.

公开(公告)号：ES2192249T3

公开(公告)日：2003-10-01

申请号：ES97304011

申请日：1997-06-10

Applicant: CANON KK

Inventor： MIYAZAKI KEIZO ,  SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H04N1/028 ,  H04N1/19 ,  H04N1/407 ,  H04N5/217

Abstract: In order to obtain a reference output from which density nonuniformity and fixed pattern noise are removed using OB pixels (1) in a solid-state image pickup device, a solid-state image pickup device which has a plurality of storage units (3) for storing pixel signals output from a plurality of photoelectric conversion elements (11), which are formed on a single semiconductor substrate and at least two of which are shielded from light, in correspondence with the photoelectric conversion elements. Pixel signal outputs from the shielded photoelectric conversion elements (1) are subjected to averaging processing on the storage units. Also, in the solid-state image pickup device, the storage units are formed of capacitances (3), which are electrically and temporarily connected to each other (5) to attain the averaging processing.

公开(公告)号：DE69327130T2

公开(公告)日：2000-06-21

申请号：DE69327130

申请日：1993-05-25

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L31/0376 ,  H01L31/107 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745

Abstract: A photoelectric conversion device wherein, in order to realize a photoelectric conversion device with high multiplication factors and excellent response speeds even under the application of low voltage by eliminating spike and notch in the hetero junction, a light absorbing layer (404) and a carrier multiplication layer (403) are made of non-single crystalline materials, said carrier multiplication layer (403) being comprised of a plurality of layers (411 to 414) with the forbidden band width changed continuously, and wherein the difference between the Fermi level and the vacuum energy level of said carrier multiplication layer (403) in the neighborhood of hetero junction is made substantially constant.

公开(公告)号：DE69227602T2

公开(公告)日：1999-06-17

申请号：DE69227602

申请日：1992-01-10

Applicant: CANON KK

Inventor： KOZUKA HIRAKU ,  SUGAWA SHIGETOSHI ,  GOFUKU IHACHIRO

IPC: H01L27/146 ,  H01L31/10 ,  H04N1/028 ,  H01L31/105

Abstract: A photoelectric converting device has non-monorrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.

公开(公告)号：DE3650714D1

公开(公告)日：1999-04-08

申请号：DE3650714

申请日：1986-11-13

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  OHMI TADAHIRO ,  HARADA TADANORI

IPC: H01L27/146 ,  H04N3/15

Abstract: A photoelectric transducer device controls a potential of a control electrode region (4) of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region (4), a read operation for reading a signal from a main electrode region of the semiconductor transistor. A semiconductor region (6) having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region (5) is formed in the control electrode region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means is provided.

公开(公告)号：DE3856221T2

公开(公告)日：1999-01-07

申请号：DE3856221

申请日：1988-01-15

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  NAKAMURA YOSHIO ,  UENO ISAMU

IPC: H01L27/146 ,  H04N3/15 ,  H04N5/217

公开(公告)号：HK1005120A1

公开(公告)日：1998-12-24

申请号：HK98104386

申请日：1998-05-21

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  MIYAZAKI KEIZO

IPC: H01L27/146 ,  H04N1/028 ,  H04N1/19 ,  H04N1/407 ,  H04N

Abstract: In order to obtain a reference output from which density nonuniformity and fixed pattern noise are removed using OB pixels (1) in a solid-state image pickup device, a solid-state image pickup device which has a plurality of storage units (3) for storing pixel signals output from a plurality of photoelectric conversion elements (11), which are formed on a single semiconductor substrate and at least two of which are shielded from light, in correspondence with the photoelectric conversion elements. Pixel signal outputs from the shielded photoelectric conversion elements (1) are subjected to averaging processing on the storage units. Also, in the solid-state image pickup device, the storage units are formed of capacitances (3), which are electrically and temporarily connected to each other (5) to attain the averaging processing.

公开(公告)号：DE3752235D1

公开(公告)日：1998-12-24

申请号：DE3752235

申请日：1987-12-09

Applicant: CANON KK

Inventor： NAKAMURA YOSHIO ,  SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N3/15 ,  H01L27/14

Abstract: A photoelectric converting cell has a control electrode region of a semiconductor transistor (S1). The carriers generated in the control electrode region by the light excitation are accumulated, and the accumulation voltage generated by this accumulation is read out from one of the main electrode regions of the semiconductor transistor. The control electrode region is connected to an excess carrier eliminating circuit (D1, Lrh, Ve) to perform the switching operation in dependence on the potential difference across the control electrode region.

公开(公告)号：DE3650666T2

公开(公告)日：1998-07-02

申请号：DE3650666

申请日：1986-11-14

Applicant: CANON KK

Inventor： OHZU HAYAO ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA ,  TANAKA NOBUYOSHI ,  SUGAWA SHIGETOSHI ,  HASHIMOTO SEIJI ,  HARADA TADANORI

IPC: H04N5/359 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H04N3/15 ,  H04N5/217

Abstract: In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing means for storing optical information read out from the photoelectric transducer element; and dark voltage storing means for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing means and information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out onto different information output lines.