公开(公告)号：JP2011053364A

公开(公告)日：2011-03-17

申请号：JP2009200912

申请日：2009-08-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKAHASHI HIDETOMO ,  HIRANO SHUJI ,  ITO TAKAYUKI ,  TSUBAKI HIDEAKI

IPC: G03F7/039 ,  C08F212/02 ,  C08F220/10 ,  C08F220/54 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an active light-sensitive or radiation-sensitive resin composition that simultaneously satisfies sensitivity, resolution, a pattern form, line edge roughness, resist temporal stability, and dry etching resistance, especially in lithography using electron beam, X-ray, or EUV light as a source of exposure light; and also to provide a pattern forming method using the same.
SOLUTION: The active light-sensitive or radiation-sensitive resin composition contains a resin (P) including: a repeating unit (A) which generates an acid when decomposed by application of active light or radiation and which includes an acid dissociation group; and a repeating unit (B) having at least an aromatic ring group.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供同时满足灵敏度，分辨率，图案形式，线边缘粗糙度，抗蚀剂时间稳定性和耐干蚀刻性的主动感光或辐射敏感性树脂组合物，特别是在使用电子的光刻中 光束，X射线或EUV光作为曝光光源; 并且还提供使用该图案形成方法的图案形成方法。 主要的感光或辐射敏感性树脂组合物含有树脂（P），其包括：通过施加活性光或辐射分解时产生酸的重复单元（A），其包括酸解离基 ; 和至少具有芳香环基的重复单元（B）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010237654A

公开(公告)日：2010-10-21

申请号：JP2010040424

申请日：2010-02-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI ,  SHIRAKAWA KOJI ,  YAO TADATERU ,  DOBASHI TORU ,  TSUCHIMURA TOMOTAKA

IPC: G03F7/039 ,  C08F12/22 ,  G03F7/004

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0046

Abstract: PROBLEM TO BE SOLVED: To provide a positive resin composition superior in development residue and outgassing performance, and to provide a method of forming a pattern using the positive resist composition. SOLUTION: The positive resin composition comprises (A) any of compounds expressed by General Formula (I) and (B) a resin that contains a residue (c) of a compound having an ionization potential value lower than that of phenol and when acted on by an acid, exhibits an increased solubility in alkali. In Formula (I): Ar represents an aromatic ring having Cy groups and optionally further other substituents; n is an integer of 2 or greater; Cy represents a group having a substituted or unsubstituted alkyl group or a group having a substituted or unsubstituted cycloaliphatic group, provided that a plurality of Cy groups may be identical with or different from each other; and M + represents an organic onium ion. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供显影残渣和除气性能优异的正性树脂组合物，并提供使用正性抗蚀剂组合物形成图案的方法。 解决方案：阳性树脂组合物包含（A）由通式（I）和（B）表示的任何化合物，含有电离电位值低于苯酚的化合物的残基（c）的树脂，和 当用酸作用时，在碱中表现出增加的溶解度。 在式（I）中：Ar表示具有Cy基团和任选的其它取代基的芳环; n是2或更大的整数; Cy表示具有取代或未取代的烷基或具有取代或未取代的脂环族基团的基团，条件是多个Cy基团可以彼此相同或不同; 并且M 表示有机鎓离子。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009288344A

公开(公告)日：2009-12-10

申请号：JP2008138614

申请日：2008-05-27

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  TSUBAKI HIDEAKI ,  SUGIMOTO NAOYA ,  NISHIKAWA NAOYUKI ,  TARUYA SHINJI

IPC: G03F7/039 ,  C08F220/18 ,  G03F7/004 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive type resist composition for new freezing processing made in the light of the above circumstances, not conducting special chemical processing to a first resist pattern in the freezing process, and capable of forming the first pattern having favorable line edge roughness without being substantially dissolved in a solvent of a second resist and a liquid developer without deteriorating the shape even when a second resist pattern is formed, and to provide a pattern forming method using the positive type resist composition. SOLUTION: This positive type resist composition contains (A) resin, whose solubility to an alkaline liquid developer is increased by the action of acid, (B) a compound to which active light rays or radiation is applied to generate acid, and (C) a compound having a functional group which bridges between resins by heating. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供根据上述情况进行的新型冷冻处理的正型抗蚀剂组合物，在冷冻过程中不对第一抗蚀剂图案进行特殊的化学处理，并且能够形成第一图案 具有良好的线边缘粗糙度，而不会基本上溶解在第二抗蚀剂和液体显影剂的溶剂中，即使形成第二抗蚀剂图案也不会使形状变差，并且提供使用正型抗蚀剂组合物的图案形成方法。 解决方案：该正型抗蚀剂组合物含有（A）树脂，其对碱性液体显影剂的溶解度由于酸的作用而增加，（B）施加活性光线或辐射以产生酸的化合物，以及 （C）具有通过加热在树脂之间桥接的官能团的化合物。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009053688A

公开(公告)日：2009-03-12

申请号：JP2008195372

申请日：2008-07-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  TSUBAKI HIDEAKI ,  WADA KENJI

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2022 ,  G03F7/2041 ,  Y10S430/111

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition which is applicable even to a multiple exposure process in which exposure is performed two or more times on the same resist film, and which ensures a fine pattern profile, and to provide a pattern forming method.
SOLUTION: The positive resist composition includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C). The pattern forming method uses the positive resist composition.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种正性抗蚀剂组合物，其即使适用于在相同的抗蚀剂膜上进行两次或更多次曝光并且确保精细图案轮廓的多次曝光工艺，并且可以提供 图案形成方法。 正型抗蚀剂组合物包括：（A）能够在光化射线或辐射照射时能够产生酸的化合物; （B）在碱性显影剂中的溶解度在酸的作用下增加的树脂; （C）能够在酸的作用下分解以产生酸的化合物; 和（D）本身作为由组分（A）和组分（C）产生的酸的碱的化合物，但是在用光化射线或辐射照射时分解，以失去由组分（A）产生的酸的碱度 ）和组分（C）。 图案形成方法使用正性抗蚀剂组合物。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009048182A

公开(公告)日：2009-03-05

申请号：JP2008187728

申请日：2008-07-18

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  WADA KENJI ,  TSUBAKI HIDEAKI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method using a positive resist composition with a favorable pattern resolution property and line width roughness, and suiting multiple exposure, in a multiple exposure process carrying out exposure a plurality of times on the same resist film. SOLUTION: The positive resist composition contains (A) a compound generating acid by irradiation of an active light ray or radiation, and (B) 80 mol.% or more of a copolymerization component not having an aromatic base. It contains resin with solubility with respect to an alkali developing solution increased by action of the acid, and (C) a compound decomposed by the action of the acid and generating an acid. An absolute value of a difference of pKa of the acid generated from the (A) component and the acid generated from the (C) component is 2 or less, and an absolute value of a difference of molecular weights is 50 or less. In the pattern forming method, by using the composition, exposure is carried out plural times with respect to the same resist film, and it has a process of heating the resist film at least once between exposure and exposure. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种使用正性抗蚀剂组合物的图案形成方法，其具有良好的图案分辨率和线宽粗糙度，并且适合多次曝光，在多次曝光过程中对其进行多次曝光 抗拒膜。 解决方案：正型抗蚀剂组合物包含（A）通过活性光线或辐射的照射产生酸的化合物，和（B）不含芳香族基团的共聚成分的80摩尔％以上。 它含有相对于通过酸的作用而增加的碱性显影溶液的溶解度的树脂，和（C）通过酸的作用分解并产生酸的化合物。 由（A）成分产生的酸和由（C）成分产生的酸的pKa的差的绝对值为2以下，分子量差的绝对值为50以下。 在图案形成方法中，通过使用该组合物，相对于相同的抗蚀剂膜进行多次曝光，并且具有在曝光和曝光之间至少一次加热抗蚀剂膜的工艺。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009025815A

公开(公告)日：2009-02-05

申请号：JP2008162370

申请日：2008-06-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YOSHITOME MASAHIRO ,  HOSHINO WATARU ,  TSUBAKI HIDEAKI

IPC: G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a surface treating agent for a freezing process and a method for forming a pattern using the surface treating agent, wherein the freezing process comprises, after a first resist pattern is formed on a first resist film, chemically treating the first resist pattern to change properties of the pattern not to be dissolved in a second resist liquid so as to form a second resist film on the first resist pattern to form a second resist pattern, and the surface treating agent for the freezing process is used for the chemical treatment on the first resist pattern to satisfy such requirements that the first resist pattern is not dissolved in the second resist liquid, that the first resist pattern shows no dimensional change, and further, that the first resist pattern and the second resist pattern have the same dry etching durability. SOLUTION: The surface treating agent for pattern formation contains a specified compound having an amino group and an aromatic ring. The method for forming a pattern is carried out using the above surface treating agent. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 待解决的问题：提供一种用于冷冻处理的表面处理剂和使用该表面处理剂形成图案的方法，其中所述冷冻处理包括在第一抗蚀剂膜上形成第一抗蚀剂图案之后， 化学处理第一抗蚀剂图案以改变不溶解在第二抗蚀剂液体中的图案的性质，以在第一抗蚀剂图案上形成第二抗蚀剂膜以形成第二抗蚀剂图案，并且用于冷冻处理的表面处理剂 用于第一抗蚀图案上的化学处理以满足第一抗蚀剂图案不溶解在第二抗蚀剂液体中的要求，即第一抗蚀剂图案不显示尺寸变化，此外，第一抗蚀剂图案和第二抗蚀剂图案 抗蚀剂图案具有相同的干蚀刻耐久性。 解决方案：用于图案形成的表面处理剂含有具有氨基和芳香环的指定化合物。 使用上述表面处理剂进行形成图案的方法。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009025708A

公开(公告)日：2009-02-05

申请号：JP2007190809

申请日：2007-07-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI

IPC: G03F7/32 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern with high sensitivity, excellent resolution of a trench pattern and good density distribution dependency, in order to stably form a high-precision fine pattern for producing a high-integration and high-precision electronic device. SOLUTION: The pattern forming method includes (1) applying a resist composition for negative development comprising a resin of which the polarity increases by the action of an acid to thereby reduce its solubility in a negative developer, (2) exposing the composition, and (3) performing development with a negative developer comprising an organic solvent having a metal impurity content of ≤100 ppb. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决问题的方案为了提供用于形成具有高灵敏度，优异的沟槽图案分辨率和良好的密度分布依赖性的图案的图案形成方法，为了稳定地形成高精度精细图案， 集成和高精度电子设备。 解决方案：图案形成方法包括：（1）应用负极显影用抗蚀剂组合物，其包含通过酸的作用极性增加的树脂，从而降低其在负显影剂中的溶解度，（2）使组合物曝光 ，和（3）用包含金属杂质含量≤100ppb的有机溶剂的负极显影剂进行显影。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008281975A

公开(公告)日：2008-11-20

申请号：JP2007197840

申请日：2007-07-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  TARUYA SHINJI ,  WADA KENJI ,  TSUBAKI HIDEAKI ,  MIZUTANI KAZUYOSHI

IPC: G03F7/30 ,  C08F20/10 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit board of liquid crystal, thermal head and the like or in other photofabrication processes, a resist composition to be used in the method, a developing solution to be used in the method and a rinsing solution to be used in the method. SOLUTION: The pattern forming method includes: (1) coating a resist composition including a resin that includes a specific repeating unit and increases the polarity by the action of an acid, wherein the composition decreases the solubility in a negative developing solution upon irradiation with actinic rays or radiation; (2) exposing; and (3) developing with a negative developing solution. There are also provided the resist composition to be used in the method, the developing solution to be used in the method and the rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶电路板，热敏头和 或其他光加工方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。 解决方案：图案形成方法包括：（1）涂覆包含特定重复单元的树脂的抗蚀剂组合物，并通过酸的作用增加极性，其中组合物降低在显影液中的溶解度， 用光化射线或辐射照射; （2）曝光; 和（3）用负显影液显影。 还提供了该方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008268855A

公开(公告)日：2008-11-06

申请号：JP2007311180

申请日：2007-11-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI ,  HOSHINO WATARU ,  YOSHITOME MASAHIRO

IPC: G03F7/40 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a surface-treating agent for a freezing process, the freezing process comprising forming a first resist pattern on a first resist film, and then forming a second resist film on the first resist pattern to form a second resist pattern thereon, and subjecting the first resist pattern to chemical treatment to thereby change the property of the first resist pattern so as not to dissolve in a second resist solution, to provide the surface-treating agent for the chemical treatment of the first resist pattern in the freezing process so as to satisfy requirements that the first resist pattern does not dissolve in the second resist solution, that the dimension of the first resist pattern does not vary, and further, that the dry etching resistances of the first resist pattern and the second resist pattern are the same, and to provide a pattern-forming method using the surface-treating agent. SOLUTION: The surface-treating agent for pattern formation contains a specific compound having a cyclic structure having a hetero atom in the skeleton. The pattern-forming method uses the above surface-treating agent. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于冷冻处理的表面处理剂，该冷冻处理包括在第一抗蚀剂膜上形成第一抗蚀剂图案，然后在第一抗蚀剂图案上形成第二抗蚀剂膜，以形成第一抗蚀剂图案 第二抗蚀剂图案，并且对第一抗蚀剂图案进行化学处理，从而改变第一抗蚀剂图案的性质，以便不溶解在第二抗蚀剂溶液中，以提供用于化学处理第一抗蚀剂的表面处理剂 以满足第一抗蚀剂图案不溶解在第二抗蚀剂溶液中的要求，即第一抗蚀剂图案的尺寸不变化，并且第一抗蚀剂图案的干蚀刻电阻和 第二抗蚀剂图案是相同的，并且提供使用表面处理剂的图案形成方法。 解决方案：用于图案形成的表面处理剂包含具有在骨架中具有杂原子的环状结构的特定化合物。 图案形成方法使用上述表面处理剂。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008127462A

公开(公告)日：2008-06-05

申请号：JP2006313913

申请日：2006-11-21

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KANEKO YUJI ,  TSUBAKI HIDEAKI

IPC: C08F6/12 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a resin by removing a low molecular eight component giving bad effects to its resist performance effectively and simply, the resin and further a positive type photosensitive composition improved with resist performance [light exposure latitude, LER (line edge roughness), development defects and preservation stability], and a method for forming a pattern by using the same. SOLUTION: This method for producing the resin increasing dissolving rate to an alkaline developing liquid by an action of an acid is provided by comprising a process of adding a solvent (b) containing a poor solvent to a solution (a) containing the resin of which dissolving rate to the alkaline development liquid is increased by the action of the acid to prepare a solution (c), and a process of precipitating the resin of which dissolving rate to the alkaline development liquid is increased by the action of the acid by adding the solution (c) to a solvent (d) containing the poor solvent. The resin produced by such the method of production, the positive type photosensitive composition containing the above resin and the method for forming the pattern by using the same are also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决问题的方法为了提供一种通过去除低分子八元素而产生有效的方法，该组分对其抗蚀剂性能有效和简单地产生不良影响，树脂和进一步的正型光敏组合物具有抗蚀性能[曝光 纬度，LER（线边缘粗糙度），显影缺陷和保存稳定性）以及通过使用它们形成图案的方法。 解决方案：通过酸的作用，通过包括将含有不良溶剂的溶剂（b）添加到含有不良溶剂的溶液（a）的方法来提供通过酸的作用来提高对碱性显影液的溶解速率的树脂的方法。 通过酸的作用使碱性显影液的溶解速率增加以制备溶液（c）的树脂，并且通过酸的作用使对碱性显影液的溶解速率的沉淀物的沉淀过程 通过将溶液（c）加入到含有不良溶剂的溶剂（d）中。 还提供了通过这样的制造方法制造的树脂，含有上述树脂的正型感光性组合物和使用该树脂形成图案的方法。 版权所有（C）2008，JPO＆INPIT