公开(公告)号：US20210233934A1

公开(公告)日：2021-07-29

申请号：US16774087

申请日：2020-01-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sipeng Gu ,  Jiehui Shu ,  Haiting Wang

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84

Abstract: One illustrative IC product disclosed herein includes an (SOI) substrate comprising a base semiconductor layer, a buried insulation layer and an active semiconductor layer positioned above the buried insulation layer. In this particular example, the IC product also includes a first region of localized high resistivity formed in the base semiconductor layer, wherein the first region of localized high resistivity has an electrical resistivity that is greater than an electrical resistivity of the material of the base semiconductor layer. The IC product also includes a first region comprising integrated circuits formed above the active semiconductor layer, wherein the first region comprising integrated circuits is positioned vertically above the first region of localized high resistivity in the base semiconductor layer.