81.
    发明专利
    未知

    公开(公告)号:DK0523494T3

    公开(公告)日:1994-11-28

    申请号:DK92111409

    申请日:1992-07-06

    Applicant: MOTOROLA INC

    Abstract: Electron devices (600) employing electron sources (610) including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources (802, 902) with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000 ANGSTROM are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.

    82.
    发明专利
    未知

    公开(公告)号:AT113410T

    公开(公告)日:1994-11-15

    申请号:AT92111409

    申请日:1992-07-06

    Applicant: MOTOROLA INC

    Abstract: Electron devices (600) employing electron sources (610) including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources (802, 902) with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000 ANGSTROM are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.

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