公开(公告)号：JPS6135786A

公开(公告)日：1986-02-20

申请号：JP15612384

申请日：1984-07-26

Applicant: Nec Corp

Inventor： KIMURA JUN ,  KURIYAMA TOSHIHIDE ,  KAWANA YOSHIE

IPC: G01N27/327 ,  C12M1/40 ,  C12N13/00 ,  G01N27/30

Abstract: PURPOSE: To carry out the partial inactivation of an immobilized enzyme membrane, in high efficiency, and to prepare a partially inactivated immobilized enzyme membrane, easily, by irradiating a specific part of the immobilized enzyme membrane with electromagnetic wave to inactivate the enzyme of that part.
CONSTITUTION: A specific part of an immobilized enzyme membrane is irradiated with electromagnetic wave such as ultraviolet radiation, X-ray, infrared radiation, microwave, etc. to inactivate the enzyme of the part and to obtain a partially inactivated immobilized enzyme membrane. For example, a differential enzyme electrode can be produced with extremely simple process, by forming an immobilized enzyme membrane on an element having plural ion-sensitive parts, shielding the immobilized enzyme membrane partly with a mask made of chromium, etc., and irradiating the immobilized enzyme membrane with a low-pressure mercury lamp, etc. emitting light shielded by the light-shielding part of the mask and having wavelength active to inactivate the enzyme, thereby effecting the partial inactivation of the enzyme.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：为了高效率地进行固定化酶膜的部分失活，容易地通过用电磁波照射固定化酶膜的特定部分来使部分灭活的固定化酶膜失活，从而使该部分的酶失活 。 构成：用紫外线，X射线，红外线，微波等电磁波照射固定化酶膜的特定部位，使部分酶失活，得到部分灭活的固定化酶膜。 例如，通过在具有多个离子敏感部件的元件上形成固定化酶膜，通过用铬等制成的掩模部分地遮蔽固定化酶膜，可以以极简单的方法制造差示酶电极，并照射 发射由掩模的遮光部分遮蔽的光并具有波长活性以使酶失活的低压汞灯等的固定化酶膜，从而实现酶的部分失活。

公开(公告)号：JPS60211986A

公开(公告)日：1985-10-24

申请号：JP6849684

申请日：1984-04-06

Applicant: Nec Corp

Inventor： KURIYAMA TOSHIHIDE

IPC: G01L5/00 ,  B25J19/02 ,  H01L29/84 ,  H01L41/08

CPC classification number: H01L29/84

Abstract: PURPOSE:To produce a senser for sense of touch robot hand distributing and measuring pressure precisely without destroying a transistor even if large pressure is impressed by a method wherein a lower electrode of piezo-electric layer is electrically connected to a gate electrode of insulating gate type field effect transistor while a pressure transmitting film is provided only on the piezoelectric layer. CONSTITUTION:The titled senser for sense of touch is composed of an insulating gate type field effect transistor formed utilizing an island type silicon layer provided on a part of sapphire substrate 1 as well as a piezo-electric layer 9 provided with a piezo- electric layer lower electrode 7 as a gate electrode and another piezo-electric layer upper electrode 10 formed on another part of substrate 1 whereon the island type silicon layer is not provided. As for the material of piezo-electric layer 9, zinc oxide is applicable. The piezo-electric layer upper electrode 10 is externally supplied with voltage to supply the potential of piezo-electric layer 9. Besides, a pressure transmitting film 11 made of sensitive resin shall exceed 10mum thick. Through these procedure, an insulating gate type field effect transistor may not be destroyed because when a robot hand is going to grasp an object, the object comes into contact with the pressure transmitting film 11 only without directly impressing said transistor with any pressure at all.

Abstract translation: 目的：为了产生感觉触觉机器人手感分布和精确测量压力，而不会破坏晶体管，即使通过压电层的下电极电连接到绝缘栅型栅极的方法施加大压力 场效应晶体管，而压电透射膜仅设置在压电层上。 构成：用于感触的标题感觉器由使用设置在蓝宝石衬底1的一部分上的岛状硅层形成的绝缘栅型场效应晶体管以及设置有压电层的压电层9 作为栅电极的下电极7和形成在不设置岛型硅层的基板1的另一部分上的另一个压电层上电极10。 对于压电层9的材料，可以使用氧化锌。 压电层上电极10被外部供给电压以供应压电层9的电位。此外，由敏感树脂制成的压力传递膜11应超过10um厚。 通过这些程序，绝缘栅型场效应晶体管可能不会被破坏，因为当机器人手抓住物体时，物体仅与压力传递膜11接触，而不会完全压迫所述晶体管。

公开(公告)号：JPS5948646A

公开(公告)日：1984-03-19

申请号：JP16006882

申请日：1982-09-14

Applicant: Nec Corp

Inventor： KURIYAMA TOSHIHIDE

IPC: G01L9/08 ,  G01L9/00 ,  G01N27/07 ,  G01N27/414 ,  G01P15/12

CPC classification number: G01N27/414

Abstract: PURPOSE:To obtain an FET type semiconductor sensor which is operable with a high sensitivity and even on a high power source voltage. CONSTITUTION:It is assumed that the quantity of impurities per unit area of a P type low impurity density silicon substrate layer 2 is set at Pscm while the quantity of impurities per unit area of an N type low impurity density surface layer 5 at Q1cm . If the quantity of impurities in the sensor area is selected so that Q1 is slightly less than Qs, the relationship of the impurities quantity in the sensor area shifts to Q1+DELTAQ1>Qs from Q1

Abstract translation: 目的：获得可高灵敏度，甚至高电源电压工作的FET型半导体传感器。 构成：假设P型低杂质浓度硅衬底层2的每单位面积的杂质量设定为Pscm <2，而N型低杂质密度表面层5的每单位面积的杂质量 在Q1cm <-2>。 如果选择传感器区域中的杂质量使得Q1稍小于Qs，则Q1当Q1等于Q1 + DELTAQ1时，传感器区域中杂质量的关系从Q1 Qs 到响应片中产生的电荷。 此时，测量端子的电位从N型低杂质密度表面层5的耗尽层电压改变为电极9的电压。测量端子的电位从约20V转移到100V，产生大的 电压变化。 这使得能够制造使用适于通过压力产生电位的膜作为敏感膜的压力传感器。