MONOLITHISCHER OPTISCH GEPUMPTER VCSEL MIT SEITLICH ANGEBRACHTEM KANTENEMITTER
    83.
    发明授权
    MONOLITHISCHER OPTISCH GEPUMPTER VCSEL MIT SEITLICH ANGEBRACHTEM KANTENEMITTER 有权
    带侧连接棱边发射单片光泵VCSEL

    公开(公告)号:EP1683245B1

    公开(公告)日:2011-06-15

    申请号:EP04802694.2

    申请日:2004-11-09

    Abstract: The invention relates to a semiconductor laser device comprising an optically pumped, surface-emitting vertical emitter region (2) provided with an active radiation-emitting vertical emitter layer (3), and at least one monolithically integrated pump radiation source (5) comprising an active radiation-emitting pump layer (6) and used to optically pump the vertical emitter region (2). According to the invention, the pump layer (6) is arranged downstream of the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied to the side of the semiconductor laser device that is closer to the pump layer (6) than the conductive layer (13). An electrical field for generating pump radiation (7) by means of charge carrier injection can be applied between said contact (9) and the conductive layer (13).

    HALBLEITERLASER MIT EINEM OPTISCH NICHTLINEAREN KRISTALL
    84.
    发明公开
    HALBLEITERLASER MIT EINEM OPTISCH NICHTLINEAREN KRISTALL 有权
    用光学非线性晶体半导体激光器

    公开(公告)号:EP2308142A1

    公开(公告)日:2011-04-13

    申请号:EP09775899.9

    申请日:2009-06-17

    Abstract: In at least one embodiment of the semiconductor laser (1), said laser comprises a semiconductor laser element (2) which during operation emits electromagnetic radiation having a fundamental wavelength, an end mirror (3), a polarization-dependent reflecting deflection mirror (4) which is disposed between the semiconductor laser element (2) and the end mirror (3), and at least one optically non-linear crystal (5), which is designed for a type II frequency conversion of the fundamental wavelength and meets a half-wave condition for the fundamental wavelength. Such a semiconductor laser (1) has a narrow-band emission of the fundamental wavelength and enables high efficiency during the frequency conversion.

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