公开(公告)号：EP1314209B1

公开(公告)日：2012-10-03

申请号：EP01967062.9

申请日：2001-08-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BADER, Stefan ,  FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  LUGAUER, Hans-Jürgen

IPC: H01L33/00 ,  H01S5/323

CPC classification number: B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/34333

公开(公告)号：EP2457254A1

公开(公告)日：2012-05-30

申请号：EP10734486.3

申请日：2010-07-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  MAUTE, Markus ,  HERRMANN, Siegfried

IPC: H01L25/16 ,  F21K99/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/50

Abstract: The invention specifies a method for manufacturing a light source, having the following steps: provision of a multiplicity of light-emitting diodes (4), wherein each light emitting-diode has a radiolucent carrier (44) and at least two physically isolated semiconductor bodies (41, 42, 43), each semiconductor body (41, 42, 43) is provided for the purpose of producing electromagnetic radiation, the semiconductor bodies (41, 42, 43) can be actuated in isolation from one another and the semiconductor bodies (41, 42, 43) are arranged on the top (44a) of the radiolucent carrier (44), provision of a chip composite (1) comprising CMOS chips (10), wherein each CMOS chip (10) has at least two connection points (2) on the top (10a) thereof, connection of at least one of the light-emitting diodes (4) to one of the CMOS chips (10), wherein the light-emitting diode (4) is arranged on the top (44a) of the radiolucent carrier (44) on the top (10a) of the CMOS chip (10), and each semiconductor body (41, 42, 43) of the light-emitting diode is connected to a connection point (2) of the CMOS chip (10).

公开(公告)号：EP2286469B1

公开(公告)日：2012-01-04

申请号：EP09761309.5

申请日：2009-05-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STRASSBURG, Martin ,  LUGAUER, Hans-Jürgen ,  GROLIER, Vincent ,  HAHN, Berthold ,  FLÖTER, Richard

IPC: H01L33/00 ,  H01L21/225

CPC classification number: H01L33/025 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/325 ,  H01S5/305

Abstract: A semiconductor body (2) comprising an n-conducting semiconductor layer (21) and a p-conducting semiconductor layer (22) is specified. The p-conducting semiconductor layer (22) contains a p-type dopant and the n-conducting semiconductor layer (21) contains an n-type dopant and a further dopant. A method for producing a semiconductor body is furthermore specified.

公开(公告)号：EP1352432B9

公开(公告)日：2011-12-07

申请号：EP02702216.9

申请日：2002-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BAUR, Johannes ,  EISERT, Dominik ,  FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  JACOB, Ulrich ,  PLASS, Werner ,  STRAUSS, Uwe ,  VÖLKL, Johannes ,  ZEHNDER, Ulrich

IPC: H01L33/64 ,  H01L33/58

CPC classification number: H01L33/644 ,  F21K9/23 ,  F21V29/70 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a light-emitting diode (1) comprising a lens body (3) that is made of an inorganic solid substance. Semiconductor chips (2), which emit light beams (18), are fastened to the lens body (3). The light-emitting diode (1) is also provided with an enclosure (20) that can be screwed by means of a screw thread (21) into a traditional lamp socket.

Abstract translation: 本发明涉及包括由无机固体物质制成的透镜体（3）的发光二极管（1）。 发射光束（18）的半导体芯片（2）固定在透镜体（3）上。 发光二极管（1）还具有外壳（20），该外壳可以通过螺纹（21）拧入传统的灯座中。

公开(公告)号：EP1258064B1

公开(公告)日：2011-04-06

申请号：EP01925294.9

申请日：2001-02-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： LELL, Alfred ,  LUFT, Johann ,  HÄRLE, Volker ,  HAHN, Berthold

IPC: H01S5/223 ,  H01S5/323

CPC classification number: H01S5/2232 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/32341

Abstract: According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.

公开(公告)号：EP2248191A1

公开(公告)日：2010-11-10

申请号：EP09714695.5

申请日：2009-02-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： AHLSTEDT, Magnus ,  BAUR, Johannes ,  ZEHNDER, Ulrich ,  STRASSBURG, Martin ,  SABATHIL, Matthias ,  HAHN, Berthold

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L33/42 ,  H01L33/46

Abstract: A semiconductor light-emitting diode (10) is proposed, comprising at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2), and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), comprising an oxide layer (8) made of transparent conductive oxide, and at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9) and has a first interface (8a), which faces the light-emitting diode layers (2, 4), and a second interface (8b), which faces the at least one mirror layer (9), and wherein the second interface (8b) of the oxide layer (8) has lower roughness (R2) than the first interface (8a) of the oxide layer (8).

Abstract translation: 提出了一种半导体发光二极管（10），其具有至少一个p掺杂发光二极管层（4），n掺杂发光二极管层（2）和光学活性区域（3） 掺杂的发光二极管层（4）和n掺杂发光二极管层（2），具有由透明导电氧化物构成的氧化物层（8），并且具有至少一个镜层（9），其中 所述氧化物层（8）设置在所述发光二极管层（2,4）和所述至少一个反射镜层（9）之间，并且包括面对所述发光二极管层（2）的第一边界面（8a） ，4）和面向所述至少一个镜层（9）的第二边界面（8b），并且其中所述氧化物层（8）的所述第二边界面（8b）具有比所述第一边界面 （8）的（8a）。

公开(公告)号：EP2193550A1

公开(公告)日：2010-06-09

申请号：EP08801254.7

申请日：2008-08-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： ALBRECHT, Tony ,  BADER, Stefan ,  HAHN, Berthold

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor body (1) is described, comprising an active layer (2) for generating radiation having a first wavelength (λ1) and a re-emission layer (3), which has a quantum well structure (4) having a quantum layer structure (5) and a barrier layer structure (6). The re-emission layer is provided for generating incoherent radiation having a second wavelength (λ2) by means of absorption of the radiation having the first wavelength in the barrier layer structure.

Abstract translation: 描述了一种发射辐射的半导体本体（1），其包括用于产生具有第一波长（λ1）的辐射的有源层（2）和具有量子阱结构（4）的再发射层（3），所述量子阱结构 量子层结构（5）和阻挡层结构（6）。 通过在阻挡层结构中吸收具有第一波长的辐射来提供再发射层以用于产生具有第二波长（λ2）的非相干辐射。

公开(公告)号：EP1543567B1

公开(公告)日：2008-04-02

申请号：EP03798073.7

申请日：2003-09-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BAUR, Johannes ,  EISERT, Dominik ,  FEHRER, Michael ,  HAHN, Berthold ,  PLÖSSL, Andreas ,  STEIN, Wilhelm

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/405

Abstract: Disclosed is a radiation-emitting semiconductor component comprising a layered structure (12) which is provided with a photon-emitting active layer (16), an n-doped cladding layer (14), and a p-doped cladding layer (18), a contact that is connected to the n-doped cladding layer (14), and a reflector layer (20) that is connected to the p-doped cladding layer (18). The inventive reflector layer (20) is formed by an alloy of silver and one or several metals of the group comprising Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta, and Cr.

公开(公告)号：EP1800353A1

公开(公告)日：2007-06-27

申请号：EP05774738.8

申请日：2005-08-04

Applicant: Osram Opto Semiconductors GmbH

Inventor： BRUNNER, Herbert ,  EISSLER, Dieter ,  HAHN, Berthold ,  HÄRLE, Volker ,  JÄGER, Harald ,  KRÄUTER, Gertrud ,  WAITL, Günter

IPC: H01L33/00

CPC classification number: H01L33/508 ,  H01L2933/0041

Abstract: The invention relates to methods for the production of luminescent diode chips which are provided with a luminescence conversion material comprising at least one luminescent substance. A layered composite, consisting of a series of luminescent diode layers for a plurality of luminescent diode chips, is provided, said composite also comprising an electric contact surface on a main surface for each luminescent diode chip, enabling electrical contact of the latter. A layer adhesion promoter is applied to the main surface and is selectively removed from at least parts of the contact surfaces. At least one luminescent substance is then applied to the main surface. Alternately, a luminescence conversion material is applied to the main surface and selectively removed from at least parts of the contact surfaces. The invention also relates to a luminescent diode chip provided with a luminescence conversion material.

公开(公告)号：EP1774599A2

公开(公告)日：2007-04-18

申请号：EP05770659.0

申请日：2005-07-20

Applicant: Osram Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  HÄRLE, Volker ,  KAISER, Stephan ,  PLÖSSL, Andreas

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/32014 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

Abstract: The invention relates to the production of semiconductor chips (1) using thin-film technology, in which a sequence of active layers is applied to a growth substrate (3) and a structured reflective electrically conductive contact material layer (4) is subsequently configured on said sequence of layers. The sequence of active layers is then structured to form active stacks (2) of layers, in such a way that a reflective electrically conductive contact material layer (4) is present on each active stack (2) of layers. A flexible electrically conductive film (6) is then applied to the contact material layers (4) to act as an auxiliary carrier layer and the growth substrate is removed.