Abstract:
Die Erfindung betrifft ein optoelektronisches Bauelement mit einer Schichtstruktur mit einer aktiven Zone zum Erzeugen einer elektromagnetischen Strahlung, wobei die aktive Zone in einer ersten Ebene angeordnet ist, wobei in die Oberfläche der Schichtstruktur eine Ausnehmung eingebracht ist, wobei die Ausnehmung an eine Endfläche des Bauelementes angrenzt, wobei die Endfläche in einer zweiten Ebene angeordnet ist, wobei die zweite Ebene im Wesentlichen senkrecht zur ersten Ebene angeordnet ist, wobei die Ausnehmung eine Bodenfläche und eine Seitenfläche aufweist, wobei die Seitenfläche im Wesentlichen senkrecht zur Endfläche angeordnet ist, wobei die Seitenfläche in einem Winkel geneigt ungleich 90° zu der ersten Ebene der aktiven Zone angeordnet ist, wobei die Bodenfläche im Bereich der ersten Ebene der aktiven Zone angeordnet ist.
Abstract:
The invention relates to an optoelectronic component having a layer structure (2) having an active zone (1) for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess (6, 25) is introduced into the surface of the layer structure, wherein the recess adjoins an end surface (13) of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface (9) and a lateral surface (7, 8), wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, wherein the bottom surface is arranged in the region of the first plane of the active zone.
Abstract:
An embodiment of the invention relates to an arrangement comprising a fiber-optic waveguide (10) and a detection device (25), said fiber-optic waveguide (10) having a core zone (10E) and a cladding zone (10C) that surrounds the core zone (10E), the core zone having a higher refractive index than the cladding zone, and the detection device (25) being capable of detecting damage to the fiber-optic waveguide (10).
Abstract:
The invention relates to an optoelectronic component comprising at least one inorganic optoelectronically active semiconductor component (10) having an active region (3) suitable for emitting or receiving light during operation, and a sealing material (6) applied to at least one surface region (7) by means of atomic layer deposition, covering the surface region (7) in a hermetically sealing manner. The invention further relates to a method for producing an opto-electronic component.
Abstract:
In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 μm.
Abstract:
An embodiment of the invention relates to a light-emitting device which comprises a radiation source (5) emitting radiation of a first wavelength, a fiber-optic waveguide (10) into which the radiation emitted by the radiation source is injected, and a converter material (15) which converts the radiation transported by the fiber-optic waveguide (10) to light (20) of a second, longer wavelength. A light-emitting device of said type may have an improved light conversion efficiency.
Abstract:
The invention relates to a method for the production of a nitride compound semiconductor based semiconductor element. In a first step of the inventive method, a semiconductor body (1) containing at least one nitride compound semiconductor is provided. A metal layer is applied to the surface (6) of the semiconductor body (1) in a second step. In a third step, the semiconductor body (1) is subsequently structured, whereby part of the metal layer (7) and parts of the semiconductor body (1) located thereunder are removed.