公开(公告)号：EP1334524A1

公开(公告)日：2003-08-13

申请号：EP01996891.6

申请日：2001-11-14

Applicant: Osram Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/14 ,  H01L33/32

Abstract: A luminescent diode (1) comprises a window layer (4) with sawtooth shaped decoupling steps arranged above an active layer (3). Boundary lines (11) run above the decoupling steps (6) by means of which the current is injected into the active layer (3). The luminescent diode (1) is characterised in having a high decoupling efficiency.

公开(公告)号：EP1307928A1

公开(公告)日：2003-05-07

申请号：EP01984505.6

申请日：2001-08-08

Applicant: Osram Opto Semiconductors GmbH

Inventor： ILLEK, Stefan ,  PLÖSSL, Andreas ,  STREUBEL, Klaus ,  WEGLEITER, Walter ,  WIRTH, Ralph

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a semiconductor chip with an active thin film layer (2), within which a photon emitting zone (3) is formed and a support substrate (1), for the thin film layer, on an opposing side to the direction of radiation from the chip is connected thereto. At least one cavity (8) is formed in the active thin film layer (2) due to the support substrate (1), by means of which a number of mesa regions (4) are formed at the boundary between support substrate (1) and the thin film layer (2).

公开(公告)号：EP1210737A1

公开(公告)日：2002-06-05

申请号：EP00974281.8

申请日：2000-09-04

Applicant: Osram Opto Semiconductors GmbH & Co. OHG

Inventor： WIRTH, Ralph

IPC: H01L33/00

CPC classification number: H01L33/025 ,  H01L33/20

Abstract: The invention relates to a light-emitting diode. The aim of the invention is to improve the coupling out of light. To this end, the light-emitting diode is covered on at least one section of its light exit surface with a plurality of truncated pyramids (10A-D) at the lateral flanks (2A, 2B, 2C) of which the light radiation that is emitted by a light-producing layer and that enters through the base (1) of the truncated pyramids (10A-D) can be efficiently coupled out.

公开(公告)号：EP2606515B1

公开(公告)日：2020-01-01

申请号：EP11748330.5

申请日：2011-08-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L33/56 ,  H01L33/44 ,  H01L25/075 ,  G02B5/02

公开(公告)号：EP1658643B1

公开(公告)日：2018-11-14

申请号：EP04762553.8

申请日：2004-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STEIN, Wilhelm ,  WINDISCH, Reiner ,  WIRTH, Ralph ,  PIETZONKA, Ines

IPC: H01L33/02 ,  H01L33/40

CPC classification number: H01L33/40 ,  H01L33/02

公开(公告)号：EP2580946B1

公开(公告)日：2018-08-08

申请号：EP11714060.8

申请日：2011-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： VON MALM, Norwin ,  MAIWALD, Hubert ,  KRAUS, Robert ,  RODE, Patrick ,  WIRTH, Ralph

IPC: H05B33/08 ,  F21V23/02 ,  F21V29/70 ,  F21V29/74 ,  F21K9/232 ,  F21K9/233 ,  F21Y115/10 ,  F21Y105/10 ,  H01L41/04 ,  H01L41/107 ,  H01L25/075 ,  F21V3/00 ,  H01L33/08 ,  H01L33/62 ,  H01L33/64

CPC classification number: H05B37/00 ,  F21K9/232 ,  F21K9/233 ,  F21V3/00 ,  F21V23/026 ,  F21V29/70 ,  F21V29/74 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/62 ,  H01L33/647 ,  H01L41/044 ,  H01L41/107 ,  H01L2224/48091 ,  H01L2224/73265 ,  H05B33/0806 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP2149163B1

公开(公告)日：2017-04-12

申请号：EP08758109.6

申请日：2008-05-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STREUBEL, Klaus ,  WIRTH, Ralph

IPC: H01L33/00

CPC classification number: H01L33/50 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46

公开(公告)号：EP2474049B1

公开(公告)日：2016-12-21

申请号：EP10754254.0

申请日：2010-08-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WEIDNER, Karl ,  WIRTH, Ralph ,  KALTENBACHER, Axel ,  WEGLEITER, Walter ,  BARCHMANN, Bernd ,  WUTZ, Oliver ,  MARFELD, Jan

IPC: H01L23/00 ,  H01L33/44 ,  H01L25/075 ,  H01L33/62 ,  H01L33/50

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

公开(公告)号：EP2580946A2

公开(公告)日：2013-04-17

申请号：EP11714060.8

申请日：2011-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： VON MALM, Norwin ,  MAIWALD, Hubert ,  KRAUS, Robert ,  RODE, Patrick ,  WIRTH, Ralph

IPC: H05B41/392 ,  H05B33/08

CPC classification number: H05B37/00 ,  F21K9/232 ,  F21K9/233 ,  F21V3/00 ,  F21V23/026 ,  F21V29/70 ,  F21V29/74 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/62 ,  H01L33/647 ,  H01L41/044 ,  H01L41/107 ,  H01L2224/48091 ,  H01L2224/73265 ,  H05B33/0806 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention specifies a light-emitting diode arrangement, with a piezoelectric transformer (1) which has at least one output-side connection point (11), and with a high-voltage light-emitting diode (2), which comprises a high-voltage light-emitting diode chip (21), wherein the high-voltage light-emitting diode (2) is connected electrically to the output-side connection point (11) of the piezoelectric transformer (1), and the high-voltage light-emitting diode chip (21) comprises at least two active regions which are connected in series with one another.

Abstract translation: 发光二极管装置包括具有至少一个输出连接位置的压电变压器和包括彼此串联连接的至少两个有源区的高压发光二极管芯片的高压发光二极管， 其中高压发光二极管电连接到压电变压器的输出连接位置。

公开(公告)号：EP2519971A1

公开(公告)日：2012-11-07

申请号：EP11710172.5

申请日：2011-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L25/075 ,  F21K99/00 ,  F21Y101/02 ,  F21Y113/00

CPC classification number: H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/48463 ,  H01L2933/0091

Abstract: The invention concerns an optoelectronic component (1) for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. At least one first semiconductor chip (3) for emitting electromagnetic radiation in a first spectral range is provided on a carrier (2). Furthermore, at least one second semiconductor chip (4, 4a, 4b) for emitting electromagnetic radiation in a second spectral range is provided on the carrier (2). The first and the second spectral ranges differ from one another. The at least one first semiconductor chip (3) and the at least one second semiconductor chip (4, 4a, 4b) are arranged in a single package. The at least one first semiconductor chip (3) is optically isolated from the at least one second semiconductor chip (4, 4a, 4b) by a barrier (5). The at least one first semiconductor chip (3) and the at least one second semiconductor chip (4, 4a, 4b) are in each case arranged centrosymmetrically about a common centre (Z) of symmetry.