公开(公告)号：US20250141081A1

公开(公告)日：2025-05-01

申请号：US18914237

申请日：2024-10-13

Applicant: RichWave Technology Corp.

Inventor： Chang-Yi Chen ,  Chih-Sheng Chen

IPC: H01P5/18

Abstract: A directional coupler includes a main path, a coupling path, a first port, and a second port. The main path is used to propagate a first RF signal. The coupling path at least partially overlaps with the main path. The coupling path includes a first end, a second end, and at least one winding routed between the first end and the second end. The first port is coupled to the first end of the coupling path. The second port is coupled to the second end of the coupling path. At least one of the first port and the second port is located inside the at least one winding.

公开(公告)号：US12107572B2

公开(公告)日：2024-10-01

申请号：US18091343

申请日：2022-12-29

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Hsien-Huang Tsai ,  Meng-Lun Li

IPC: H03K17/14 ,  H03K17/04 ,  H03K17/041 ,  H03K17/10 ,  H03K17/16 ,  H03K17/68

CPC classification number: H03K17/102 ,  H03K2217/0054

Abstract: A switch device includes a first switch unit, a second switch unit, a first sub-switch unit, a second sub-switch unit, a first resistor and a second resistor. The first switch unit is coupled to a radio-frequency terminal and coupled to the second switch unit in cascode. The first sub-switch unit is coupled to the second sub-switch unit in cascode. The first sub-switch unit is further coupled between control terminals of the first switch unit and the second switch unit. The first sub-switch unit is further coupled to a node between the first resistor and the first switch unit. The second sub-switch unit is further coupled to a node between the second resistor and the second switch unit. When the first switch unit and the second switch unit are transitioned, the first sub-switch unit and the second sub-switch unit can be turned on to discharge and/or neutralize accumulated charges.

公开(公告)号：US20240186952A1

公开(公告)日：2024-06-06

申请号：US18081625

申请日：2022-12-14

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Yu-Hsuan Chao

IPC: H03F1/02 ,  H03F3/193

CPC classification number: H03F1/0205 ,  H03F3/193 ,  H03F2200/451

Abstract: An amplifying circuit includes a first transistor, a second transistor, and a switching circuit. A control terminal of the first transistor is coupled to an input terminal of the amplifying circuit, and a first terminal of the first transistor is coupled to a first reference end. The input terminal of the amplifying circuit receives a first radio frequency (RF) signal. A first terminal of the second transistor is coupled to a second terminal of the first transistor, and a second terminal of the second transistor is coupled to an output terminal of the amplifying circuit. The output terminal of the amplifying circuit outputs an amplified signal. The first transistor amplifies the first RF signal to generate a second RF signal. The switching circuit performs a switching operation to transmit the second RF signal to one of the first terminal and the control terminal of the second transistor.

公开(公告)号：US20230361765A1

公开(公告)日：2023-11-09

申请号：US18219068

申请日：2023-07-06

Applicant: RichWave Technology Corp.

Inventor： Hsiang-Jen Jao ,  Tien-Yun Peng ,  Chih-Sheng Chen

IPC: H03K17/0412

CPC classification number: H03K17/04123

Abstract: A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.

公开(公告)号：US11764736B2

公开(公告)日：2023-09-19

申请号：US17392205

申请日：2021-08-02

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tien-Yun Peng

IPC: H03G3/30 ,  H03F1/30 ,  H03G3/10 ,  H03F1/02 ,  H03F3/04

CPC classification number: H03F1/30 ,  H03F1/0261 ,  H03F3/04 ,  H03G3/10 ,  H03G3/30

Abstract: The present invention discloses a bias compensation circuit. The bias compensation circuit includes a detecting circuit, including a diode-connected transistor circuit, with a first end for receiving a first current, and a second end coupled to a first reference voltage end; and a first diode circuit, with a first end for receiving a second current, and a second end coupled to the first reference voltage end; wherein the detecting circuit provides a first voltage level according to the diode-connected transistor circuit, and provides a second voltage level according to the first diode circuit; a voltage-current converting circuit, coupled to the detecting circuit, for generating a first reference current according to the first voltage level and the second voltage level; and a bias circuit, coupled to the voltage-current converting circuit, for receiving the first reference current, to provide a bias voltage level according to the first reference current.

公开(公告)号：US11742845B2

公开(公告)日：2023-08-29

申请号：US17565475

申请日：2021-12-30

Applicant: RichWave Technology Corp.

Inventor： Hsiang-Jen Jao ,  Tien-Yun Peng ,  Chih-Sheng Chen

IPC: H03K17/0412

CPC classification number: H03K17/04123

Abstract: A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.

公开(公告)号：US20230179194A1

公开(公告)日：2023-06-08

申请号：US17565475

申请日：2021-12-30

Applicant: RichWave Technology Corp.

Inventor： Hsiang-Jen Jao ,  Tien-Yun Peng ,  Chih-Sheng Chen

IPC: H03K17/0412

CPC classification number: H03K17/04123

Abstract: A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.

公开(公告)号：US20230123320A1

公开(公告)日：2023-04-20

申请号：US17542463

申请日：2021-12-05

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Yu-Hsiang Chu

IPC: H04B1/04 ,  H04B1/44 ,  H04B1/16

Abstract: A radio frequency switch has an antenna end, a first signal end for transmitting a first radio frequency signal, a second signal end for transmitting a second radio frequency signal, a third signal end for transmitting a third radio frequency signal, a first series path having a first switch, a second series path having a second switch, a third series path having a third switch, a first shunt path coupled between the first signal end and a node, a second shunt path coupled between the second signal end and the node, a common path coupled between the node and a first reference voltage end, and a third shunt path coupled between the third signal end and a second reference voltage end. The first series path and the second series path are connected to a common ground pad via the common path.

公开(公告)号：US20230061516A1

公开(公告)日：2023-03-02

申请号：US17510399

申请日：2021-10-26

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Yi-Bin Yang

IPC: H03K17/693 ,  H01P1/10 ,  H04B1/44

Abstract: A switch device structure includes RF1-st and RF2-nd input terminals, RFA-th, RFB-th and RFC-th output terminals, P2A-th, P1B-th and P1C-th paths, and first and second common paths. The P2A-th path includes a first terminal, and a second terminal coupled to the RFA-th output terminal. The P1B-th path includes a first terminal, and a second terminal coupled to the RFB-th output terminal. The P1C-th path includes a first terminal, and a second terminal coupled to the RFC-th output terminal. The first common path is coupled to the RF2-nd input terminal and the first terminal of the P2A-th path. The second common path is coupled to the RF1-st input terminal, the first terminal of the P1B-th path, and the first terminal of the P1C-th path. The first and second common paths cross each other on different planes to form a crossover.

公开(公告)号：US20220385241A1

公开(公告)日：2022-12-01

申请号：US17356467

申请日：2021-06-23

Applicant: RichWave Technology Corp.

Inventor： Tien-Yun Peng ,  Chih-Sheng Chen

IPC: H03F1/32 ,  H03F3/20

Abstract: A power amplifier includes a transistor, a temperature sensor and a filter. The transistor is used to receive a bias signal and amplify a radio frequency (RF) signal. The temperature sensor is arranged in proximity to the transistor, and is used to detect a temperature of the transistor to provide a voltage signal at a control node accordingly. The filter is coupled to the temperature sensor and is used to filter the voltage signal to generate a filtered voltage. The bias signal is adjusted according to the filtered voltage.