公开(公告)号：JPH06310470A

公开(公告)日：1994-11-04

申请号：JP9320593

申请日：1993-04-20

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/8244 ,  H01L27/11

Abstract: PURPOSE:To perform pattern machining of a conductive layer with a small spacing using a general exposure device, for example, reduce the cell area of a memory cell for SRAM and increase integration. CONSTITUTION:A resist auxiliary layer 18 functioning as one portion of a resist film when performing etching machining a conductive layer 16 is formed on a conductive layer 16 which should be subjected to pattern machining. After that, the resist auxiliary layer 18 is subjected to etching machining to a specific first pattern by a first resist film 20. Then, a second resist film 22 with a specific second pattern is formed on the surface of the conductive layer 16 where the resist auxiliary layer 18 is eliminated near the first pattern of the resist auxiliary layer 18. Then, the conductive layer 16 is subjected to etching machining with the resist auxiliary layer 18 of the first pattern and the second resist film 22 of the second pattern as masks, thus obtaining a conductive layer with a micro-pattern.

公开(公告)号：JPH05243583A

公开(公告)日：1993-09-21

申请号：JP7834292

申请日：1992-02-28

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/8234 ,  H01L21/8247 ,  H01L27/088 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE:To provide a method for manufacturing a semiconductor device having a multilayer gate structure by means for generating no dust without mixture between resists and without limit in a type of a material of the resist to be used in the case of the mixture. CONSTITUTION:A method for manufacturing a semiconductor device having a multilayer gate structure which has one gate structure 1 (multilayer gate structure) formed of at least two layers (a floating gate 1a and a control gate 1b) and the other gate structure 2 comprises the steps of forming the gate of one layer of the one structure 1 with an insulating film as an etching mask, then forming a gate of the other one layer with an insulating film as an etching mask in which case the structure 2 is protected by a protective film.

公开(公告)号：JPH0547917A

公开(公告)日：1993-02-26

申请号：JP4254091

申请日：1991-02-13

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/76

Abstract: PURPOSE:To eliminate an insulating film outside a trench, in the manufacturing method of a semiconductor device wherein a trench formed on the surface part of a semiconductor substrate is filled with an insulating film by bias ECRCVD. CONSTITUTION:A resist film 6 for flattening is formed on the surface of a semiconductor substrate. The resist film 6 for flattening is eliminated until the upper part of an insulating film 5a outside a trench is exposed. The resist film 6 for flattening use is used as a mask, and the insulating film is etched. An insulating film for flattening is eliminated until the upper part of the insulating film outside the trench is exposed. The insulating film inside the trench is used as a mask, and etching is performed in this state, so that only the insulating film outside the trench can be completely eliminated.

公开(公告)号：JPH0513595A

公开(公告)日：1993-01-22

申请号：JP4253991

申请日：1991-02-13

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768

Abstract: PURPOSE:To form a minute contact hole with a high density using self-alignment techniques by forming a wiring groove in an interlayer dielectric film by means of etching techniques using, as a mask, a resist film used to produce a groove, by preparing a resist film used to produce a contact hole, and by etching a substrate using both resist films as a mask. CONSTITUTION:An interlayer dielectric film 10 is selectively etched using a resist film 11 as a mask, and a wiring groove 12 is then formed in the interlayer dielectric film 10. With the resist film 11, used to produce a groove, remaining, a resist 13 used to produce a contact hole is prepared. Using these resist films 11 and 13 as a mask, the interlayer dielectric film 10 is etched, whereupon bit contact holes 15 are formed. With this arrangement, even if areas unmasked with the resist films 11 and 13 are large, there the contact is ensured. Therefore, it is possible to achieve a minute contact hole with a high integrity in excess of the marginal resolution of a photolithography.

公开(公告)号：JPH02109317A

公开(公告)日：1990-04-23

申请号：JP26186188

申请日：1988-10-18

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G03B27/53 ,  G03F9/00 ,  G05D3/12 ,  G06T1/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enhance the alignment accuracy by performing resist removal only on the exposure pattern for measurement of alignment error provided in an exposure mask pattern, correcting the error in position setting, and then performing pattern exposure to the resist. CONSTITUTION:An exposure pattern 4 for measurement of alignment error is provided on a reticle, which performs pattern exposure to a resist 3 formed on a substrate 2 having a ground substrate pattern 1, and the intensity of exposure laser beam is increased to remove resist 3 only from the pattern 4. The error data is obtained from the positional relation between this pattern 4 and above-mentioned pattern 1, and on the basis thereof the relative position setting error of the exposure mask pattern with the substrate is corrected, and exposure of device pattern by reticle is made to the resist 3. This provides high accuracy alignment.

公开(公告)号：JPS63316436A

公开(公告)日：1988-12-23

申请号：JP15262587

申请日：1987-06-19

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/302 ,  G03C1/00 ,  G03C5/00 ,  G03F7/00 ,  G03F7/095 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065

Abstract: PURPOSE:To form a resist pattern by using a fine pattern of high resolution, high accuracy and high definition by a method wherein, for a two-layer resist method, a second photoresist layer as an upper layer is composed of a negative- type photoresist which can absorb the deep UV light of a short wavelength considerably. CONSTITUTION:When a photoresist pattern is formed on a substrate 1 where a stepped part 2 is formed on the surface, a first photoresist layer 11 which is photosensitive to far ultraviolet rays is formed in such a way that its surface 11a becomes nearly flat while the stepped part 2 is filled: the far ultraviolet rays are absorbed on this surface. In addition, a second negative-type photoresist layer 12 which is photosensitive to the far ultraviolet rays is formed: this second photoresist layer 12 is exposed boy the far ultraviolet rays, and is developed; a pattern is formed; the first photoresist layer 11 is exposed by the far ultraviolet rays by making use of the second patterned photoresist layer 12 as an optical mask, and is developed: a pattern is formed. By this setup, the resist pattern of high accuracy and high definition can be formed.

公开(公告)号：JPS6358825A

公开(公告)日：1988-03-14

申请号：JP20315186

申请日：1986-08-29

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To form the microscopic exposure pattern having excellent degree of sharpness by a method wherein the exposure pattern for a photoresist is divided into the sets of pattern having the interval layger than the minimum width of resolution line, and a reduction projection exposure operation is performed respectively on the pattern of each set which is divided as above. CONSTITUTION:The every other one of the stripe-like exposure part S for a photoresist film 2 is formed into a set, and it is divided into the first and the second exposure patterns 8A and 8B, they are superposed by performing an exposing operation twice, and an exposure pattern 8 is formed on the photoresist film 2 by conducting an exposing operation. In this example, as the first and the second exposure patterns 8A and 8B, on which an exposure part S having the width W is arranged leaving the interval 2D+W respectively, have the same pattern substantially, a magnified optical image with which either of the exposing patterns 8A and 8B will be formed is used as an original pattern when a pattern exposing operation is performed. When an exposure pattern 8 is going to be formed, the first and the second exposing operations are performed respectively.

公开(公告)号：JPS62261124A

公开(公告)日：1987-11-13

申请号：JP10539386

申请日：1986-05-08

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: G03F7/26 ,  C23F1/00 ,  G03C5/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable a resist layer with a fine pattern and excellent plasma resistance to be formed by a method wherein a semiconductor is successively coated with a photoresist layer and specific film, and after irradiating the film with laser beams to provide it with transmittance, overall surface is irradiated with specific light to expose the photoresist layer. CONSTITUTION:A semiconductor substrate 1 is coated with a resist layer 2 with high plasma resistance sensing specific light (ultraviolet rays) 6 and the resist layer 2 is further coated with an image forming film 3 with the transmittance to the light 6 by irradiating it with laser beams 5. Then, the film 3 is irradiated with laser beams 5 through the intermediary of masks 4 of specific pattern to provide the irradiated part 3a with transmittance and then the overall surface is irradiated with the light 6 using the film 3 as a mask to expose the photoresist layer 2. Through these procedures, the photoresist layer 2 is exposed conforming to the mask pattern of film 3 and after development, etching resist layer 7 with high precision fine pattern can be formed on the semiconductor substrate 1 so that high plasma etching resistance may be provided later due to the high plasma resistance of the resist layer 7.

公开(公告)号：JPS6262523A

公开(公告)日：1987-03-19

申请号：JP20175185

申请日：1985-09-13

Applicant: SONY CORP

Inventor： TAKEDA MINORU

IPC: H01L21/306 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To largely improve the stability and reliability of forming a pattern by sufficiently baking a reflection preventive film at high temperature, then drying the coating resist in vacuum, further exposing, developing and etching to prevent the resist from deforming. CONSTITUTION:In a method of forming a pattern having the step I of forming a reflection preventive film on an article to be etched, the step III of forming a resist layer on the reflection preventive film, the step V of exposing and developing the resist layer to pattern it, and the step VI of selectively etching the article, the step II of baking in advance at high temperature so as not to remove the preventive film by developing the resist layer and the step IV of drying in vacuum the resist layer are provided. In other words, the reflection preventive film is applied on a high reflection metal base layer, sufficiently baked at high temperature, the resist layer is applied, dried in vacuum, exposed and then developed to form a resist pattern, and the preventive film and the base layer are eventually etched by reactive ion etching by allowing the preventive film to remain.

公开(公告)号：JP2009039065A

公开(公告)日：2009-02-26

申请号：JP2007209338

申请日：2007-08-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ONISHI MICHIHIRO ,  KISHIMOTO TAKUYA ,  WATANABE HIDETOSHI ,  SEGAWA YUJI ,  SETORIYAMA TASUKU ,  ABE TOMOTERU ,  TAKEDA MINORU ,  SUGANUMA HIROSHI

IPC: C12Q1/04 ,  C12Q1/68 ,  G01N21/78 ,  G01N33/569

Abstract: PROBLEM TO BE SOLVED: To provide a virus detection method enabling real-time detection of the proliferation of viruses in a living cell without breaking the living cell.
SOLUTION: Viruses in a living cell are detected by the fluorescence detection of a fluorescent labeled nucleotide transferred into a virus genome. The fluorescent labeled nucleotide is labeled at least with a group of a plurality of fluorescent dyes containing an excitation object fluorescent dye to give an excitation energy acquired by light absorption to the other fluorescent dye, and a detection object fluorescent dye to emit light by receiving the excitation energy from the other fluorescent dye.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够实时检测活细胞中病毒增殖而不破坏活细胞的病毒检测方法。 解决方案：通过荧光标记的核苷酸转移到病毒基因组的荧光检测来检测活细胞中的病毒。 荧光标记的核苷酸至少用含有激发对象荧光染料的多种荧光染料的一组标记，得到通过光吸收获得的激发能量到另一种荧光染料，以及检测对象荧光染料通过接收 来自其他荧光染料的激发能。 版权所有（C）2009，JPO＆INPIT