Abstract:
PROBLEM TO BE SOLVED: To provide a patterning method capable of appropriately grouping the patterns in the same layer. SOLUTION: This patterning method comprises the step S11 of preparing a pattern layout having a plurality of hole patterns; the step S13 of setting a grid having a plurality of vertical lines and a plurality of horizontal lines on the pattern layout; the step S15 of extracting the nearest vertical line and the nearest horizontal line relating to each hole pattern; the step S17 of judging for each hole pattern whether the first condition is satisfied that both of the extracted vertical line and horizontal line are even lines or both of them are odd lines, or the second condition is satisfied that one of the extracted vertical line and horizontal line is even line and the other is odd line; and the steps S18, S19 of grouping the hole patterns included in the pattern layout into two groups, based on the judgement result. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To secure information certainly even if the information is shared by performing communication directly among other devices. SOLUTION: The gateway unit 10 performs the transmission/reception of data among other devices by controlling communication through a plurality of communication networks connected by an interface corresponding to a plurality of different communication networks by a communication class section 23 and a CORBA section 26. The gateway unit 10 receives data from an IO device 12 and the like, and stores them in the data object of a memory 22. A data manager section 20 stores update information obtained by updating the data in an update information storage section 20a, transmits the update information to the other device through the communication network connected by the interface, and receives the update information from the other device through the communication network, thus updating the data. The communication class section 23 makes an encryption/decryption processing section 24 perform the encryption/decryption of data transmitted/received among the other devices by using a common key for an information sharing group received from an authentication server 8 by an authentication processing section 25. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To share data among other devices connected with a plurality of different communication networks. SOLUTION: This gateway unit 10 is provided with an interface (wireless device I/F card 33, portable telephone I/F card 34, satellite communication I/F card 35, wireless LAN card 36) for connection with a plurality of different communication networks. Each section (communication class section 24, CORBA section 26) of the gateway unit 10 performs the transmission/reception of data among other devices by controlling communication through the plurality of different communication networks connected by the interface. The gateway unit 10 receives data from an IO device 12 and the like, and stores the data in the data object of a memory 22. A data manager section 20 stores update information obtained by updating the data in an update information storage section 20a, transmits the update information to the other device through the communication network connected by the interface, and receives the update information from the other device through the communication network, thus updating the data. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce a load of timing closure on design side and a load of OPC and process verification on manufacture side, and to improve design efficiency. SOLUTION: The pattern design method is used to design a pattern of a semiconductor circuit, and it includes steps 11 and 12 to prepare a design pattern cells arranged and wired in unit of a function block of a semiconductor circuit; step 13 to analyze the electrical property of a circuit corresponding to the design pattern; a step 14 to create a mask pattern data on the basis of the design pattern in case when the analysis result of the electrical property satisfies the predetermined electrical characteristic; a step 15 to find out an mount of deviation between a pattern of a mask pattern formed on a wafer and an estimated pattern; and a step to correct at least either of the arrangement and the wiring of the cell of the design pattern corresponding to the mask pattern, in case when the amount of deviation is larger than the predetermined allowable amount of variation. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To form a borderless contact for word lines or a via-contact for bit lines with a high yield by utilizing partially removed wiring patterns. SOLUTION: The semiconductor memory device comprises a plurality of active region patterns AA i , AA i+1 , ..., AA n extending in the direction of columns on a memory cell array; a plurality of word line patterns WL1, WL2 extending in the direction of rows and disposed non-uniformly; a plurality of selection gate line patterns SG1, SG2 arrayed in parallel with the plurality of word line patterns; a borderless contact 14 disposed in the vicinity of a terminal of the word line pattern on the memory cell array, contacting a part of wiring pulled out of the end of the memory cell array and not contacting with wiring adjacent to the wiring; and a bit line contact (CB) 11 disposed within a region planned to form the contact formed by removing, by means of double exposure, a part of the plurality of word line patterns and selection gate line patterns. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for measuring a pattern which allows the automatization of pattern measurement. SOLUTION: The method for measuring a pattern includes a step S1 for preparing a substrate having a pattern, a step S4 for extracting a part to be measured on the substrate based on the simulation using the pattern data concerned with the pattern as input data, a step S6 for forming informations for measuring physical quantities of the extracted part to be measured, and a step 10 for measuring the extracted part to be measured based on the informations by a measuring means. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To automatically obtain an optimum layout with the smallest layout area which is free of a dangerous pattern under given process conditions. SOLUTION: A design layout generating method of generating an optimum design layout with given semiconductor process parameters by repeatedly optimizing at least one of a design rule, a process proximity effect correction parameter, and a semiconductor process parameter, comprises: calculating finish plane shapes on a wafer with a plurality of process parameters respectively; calculating evaluation values from the finish plane shapes; deciding whether or not the respective calculated evaluation values satisfy tolerance; calculating position coordinates and evaluation values when the tolerance is not satisfied; generating a design layout alteration guideline on the basis of the calculated position coordinates and the evaluation values; and partially correcting the design layout on the basis of the generated design layout alteration guideline. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To form a contact hole at a low cost although a resolution in a crowded part is assured highly. SOLUTION: A method of forming a contact hole includes a step of exposing and developing a first photosensitive resist film on a substrate by using a photomask having mask patterns disposed periodically in a first direction and a second direction intersecting perpendicularly with the first direction and double lighting, a step of forming a first line and space along the first direction, thereafter a step of forming a second photosensitive region on the substrate, a step of exposing and developing the second photosensitive resist film by using the photomask and the double lighting intersecting perpendicularly with the double illuminating, and a step of forming a second line and space intersecting perpendicularly with the first line and space. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask pattern for reducing the process time of PPC (process proximity correction) without increasing a chip area. SOLUTION: The method for manufacturing a mask pattern includes steps of: subjecting each of a plurality of cell patterns stored in a first cell library to the process proximity correction to prepare a second cell library to store a plurality of corrected cell patterns; arranging a first corrected cell pattern and a second corrected cell pattern as one of the plurality of corrected cell patterns so that the respective edges are brought into contact with, are adjacent to or are overlapped on each other; extracting the boundary pattern near the boundary of the first corrected cell pattern and the second corrected cell pattern; and subjecting the boundary pattern to the process proximity correction. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a mask set for forming a pattern having both of smaller line width than the optically resolvable minimum line width of a projection exposure apparatus and the optically resolvable minimum space width of the projection exposure apparatus. SOLUTION: The mask set aims to form a fine line part having smaller line width than the optically resolvable minimum line width of the projection exposure apparatus on an exposure substrate by preliminarily thinning the line width of the pattern after exposure. The mask set includes (1) a first mask 10 having fine line patterns 11a 11b for forming the fine line part and (2) a second mask having a window to remove an unnecessary part from the pattern formed by the first mask 10. COPYRIGHT: (C)2005,JPO&NCIPI