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    HIGH FREQUENCY CATHODE HEATER SUPPLY FOR A MICROWAVE SOURCE
    81.
    发明公开
    HIGH FREQUENCY CATHODE HEATER SUPPLY FOR A MICROWAVE SOURCE 有权
    高频阴极加热器电源用于微波源

    公开(公告)号：EP2499650A1

    公开(公告)日：2012-09-19

    申请号：EP10776409.4

    申请日：2010-11-11

    Applicant: E2V Technologies (UK) Limited

    Inventor： RICHARDSON, Robert ,  BLAND, Michael ,  BENNETT, Colin

    IPC: H01J1/13 ,  H01J23/05 ,  H01J25/52 ,  H01J25/587

    CPC classification number: H01J1/135 ,  H01J23/05 ,  H01J25/52 ,  H01J25/587

    Abstract: A high frequency cathode heater supply for a microwave source includes a SMPS inverter (13) and an isolation transformer (12) having a primary winding (122) arranged to be powered by the SMPS inverter, a monitor winding (123) passing through primary core assemblies of the primary winding and a secondary winding (121) arranged for connection to the cathode heater (11). A current monitor (141) is arranged to monitor a current in the primary windings. Signal processing modules (14, 131, 132) are arranged to receive a first input signal from the monitor winding (123) indicative of a voltage Vh across the cathode heater (11) and a second input signal from the current monitor (141) indicative of a current through the cathode heater. The signal processing modules are arranged to output a control signal to the SMPS inverter to control power supplied to the cathode heater dependent on a monitored resistance of,or monitored power supplied to, the cathode heater as determined from the first input signal and the second input signal.

    Magnetron
    84.
    发明公开
    Magnetron 有权
    磁控

    公开(公告)号：EP1505627A3

    公开(公告)日：2008-03-05

    申请号：EP04018738.7

    申请日：2004-08-06

    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    Inventor： Aiga, Masayuki ,  Tsukada, Toshiyuki

    IPC: H01J23/04

    CPC classification number: H01J23/05 ,  B82Y10/00 ,  H01J25/587 ,  H01J2201/30469

    Abstract: A cathode substrate 10 is heated to 400 to 600 °C in the atmosphere of hydrocarbon gas such as methane and the gas is allowed to react with the surface of the cathode substrate 10 by a thermal CVD method. Thus, an electron emission source in which graphite nano-fibers 11 are allowed to grow in a gaseous-phase on the surface of the cathode substrate 10 by using nickel or iron existing on the surface of the cathode substrate 10 as a nucleus is held between upper and lower end hats 12 to form a cathode part 13.

    Abstract translation: 在甲烷等烃类气体的气氛中，将阴极基板10加热到400〜600℃，通过热CVD法使气体与阴极基板10的表面反应。 因此，通过使用存在于阴极基板10的表面上的镍或铁作为核，允许石墨纳米纤维11在阴极基板10的表面上以气相生长的电子发射源被保持在 上部和下部端帽12以形成阴极部分13。

    Magnetron
    85.
    发明公开
    Magnetron 有权
    磁控

    公开(公告)号：EP1557858A3

    公开(公告)日：2008-02-27

    申请号：EP05001351.5

    申请日：2005-01-24

    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    Inventor： Inami, Masahiro

    IPC: H01J23/05 ,  H01J25/50 ,  H01J9/04

    CPC classification number: H01J9/04 ,  H01J23/05 ,  H01J25/587

    Abstract: A magnetron 10 is equipped with a helical filament 39, as an element of a cathode assembly, arranged on a central axis of an anode cylindrical body 13. Assuming that a resistance value of the filament 39 before forming the carbonized layer is R1 and a resistance value of the filament 39 after forming the carbonized layer is R2, a thickness of the carbonized layer 42 of the filament 39 is determined such that a carbonization rate Rx defined by the equation "Rx = {(R2 - R1) /R1} × 100" in a range of from 30 to 50%.

    Abstract translation: 磁控管10配备有布置在阳极圆柱体13的中心轴线上的作为阴极组件的元件的螺旋状细丝39.假设在形成碳化层之前细丝39的电阻值为R1并且电阻 在形成碳化层之后的长丝39的值为R2时，确定长丝39的碳化层42的厚度，使得由公式“Rx = {（R2-R1）/ R1}×100定义的碳化率Rx “范围从30到50％。

    M-TYPE MICROWAVE DEVICE
    86.
    发明公开
    M-TYPE MICROWAVE DEVICE 审中-公开
    MIKROWELLENANORDNUNG DES M-TYPS

    公开(公告)号：EP1054430A1

    公开(公告)日：2000-11-22

    申请号：EP99902010.0

    申请日：1999-01-05

    Applicant: Makhov, Vladimir Iliich

    Inventor： Makhov, Vladimir Iliich

    IPC: H01J25/50 ,  H01J23/05

    CPC classification number: H01J23/05 ,  H01J25/50

    Abstract: The present invention relates to M-type microwave devices and is aimed to improve effectiveness of using a working surface of field-electron emitters, to improve their reliability while increasing stability of field emission and service life of the device. These objects are solved in the design of a M-type microwave device, comprising an anode encircling a cylindrical evacuated cavity and a cathode assembly disposed co-axially inside the anode, said cathode assembly comprising a cylindrical rod with its surfaces having elements in the form of planar (film) field-electron emitters and secondary-electron emitters that provide a primary and a secondary electron emission, respectively. In doing so, the normal to planar field-electron emitters is not parallel and makes therewith an angle of more than 0 degrees. An end-face of the field-electron emitter is protected by a tunnel-thin dielectric layer containing impurities of various materials and materials having a low work function.

    Abstract translation: 本发明涉及M型微波器件，旨在提高使用场致电子发射器工作面的有效性，提高其可靠性，同时提高器件的场致发射稳定性和使用寿命。 这些目的在M型微波装置的设计中得到解决，该装置包括一个环绕圆柱形抽空腔的阳极和一个同轴地设置在阳极内部的阴极组件，所述阴极组件包括圆柱形杆，其表面具有形式的元件 分别提供初级和次级电子发射的平面（膜）场 - 电子发射体和二次电子发射体。 在这样做时，平面场电子发射器的法线不平行并且具有大于0度的角度。 场电子发射体的端面由具有低功函数的各种材料和材料的杂质的隧道 - 薄介电层保护。

    Dispositif de génération d'ondes hyperfréquences à double cathodes
    88.
    发明公开
    Dispositif de génération d'ondes hyperfréquences à double cathodes 审中-公开
    一种用于生成与两个阴极超高频波装置

    公开(公告)号：EP2747117A3

    公开(公告)日：2016-03-30

    申请号：EP13197779.5

    申请日：2013-12-17

    Applicant: Thales

    Inventor： Brasile, Jean-Pierre ,  Fasse, Dominique ,  Chauchat, Anne-Sophie ,  Sirot, Patrick ,  Jousse, Dominique

    IPC: H01J23/05 ,  H01J25/587

    CPC classification number: H01J23/05 ,  H01J25/587

    Abstract: Le dispositif (10) de génération d'ondes hyperfréquences, comprend une anode (20) et une première cathode (16), séparées par un espace d'interaction (22), la première cathode (16) étant adaptée pour émettre des premiers électrons dans l'espace d'interaction (22) lorsque soumise à un champ électrique (E) d'intensité supérieure à une première valeur seuil, et l'anode (20) étant adaptée pour attirer lesdits premiers électrons,
    Il comprend une deuxième cathode (18), intercalée entre la première cathode (16) et l'anode (20) et adaptée pour émettre des deuxièmes électrons dans l'espace d'interaction (22) lorsque soumise à un champ électrique (E) d'intensité supérieure à une deuxième valeur seuil, l'anode (20) étant adaptée pour attirer lesdits deuxièmes électrons, et un circuit (21) d'alimentation électrique des cathodes (16, 18), adapté pour établir une différence de potentiel entre les cathodes (16, 18).

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