公开(公告)号：JP2003257886A

公开(公告)日：2003-09-12

申请号：JP2002165417

申请日：2002-06-06

Applicant: KORAI KAGI KOFUN YUGENKOSHI ,  LEE CHING TING

Inventor： LEE CHING-TING

IPC: H01L21/28 ,  H01L21/24 ,  H01L21/285 ,  H01L21/308 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for fabricating a III-nitrogen semiconductor device in which the service life of the device is prolonged by attaining a low specific contact resistance between a metal and a p-type III-nitrogen layer. SOLUTION: Specific contact resistance between p-type III-nitrogen layers is lowered by an oxidation technology and a sulfidation technology. A p-type III-nitrogen layer sample is immersed into ammonium sulfide solution and the oxidation layer of the p-type III-nitrogen layer is removed. Subsequently, the sample is cleaned and dried, a metal layer is deposited on the surface of the p-type III-nitrogen layer, and then the sample is heat treated to form an ohmic contact between a metal and the p-type III-nitrogen layer. COPYRIGHT: (C)2003,JPO

公开(公告)号：GB2341572A

公开(公告)日：2000-03-22

申请号：GB9820068

申请日：1998-09-16

Applicant: LAI CHING TING

Inventor： LAI CHING TING

IPC: B25D1/00 ,  B25G1/10

Abstract: A hammer 20 includes a handle 21 having a neck portion 24 formed close to one end, and a head 22 secured to the handle close to the neck portion. A protective sleeve 10 is engaged on the handle and includes a neck portion (12 Fig 1) engaged with the neck portion of the handle for preventing the head from being disengaged from the handle after the handle is broken (26 Fig 3). The sleeve includes a number of ribs 11 formed on the outer portion for facilitating the grasping of the handle. The sleeve is made of plastics material and is shrunk onto the handle.

公开(公告)号：SG131774A1

公开(公告)日：2007-05-28

申请号：SG2005063839

申请日：2005-10-05

Applicant: LEONG CHING TING

Inventor： LEONG CHING TING

IPC: A43B11/00

Abstract: A footwear (100) comprising a base (105) and a retainer being coupled to the base for forming a cavity and an opening (110) thereto. The footwear further comprises a heel counter (102) being coupled to at least one of the base and the retainer. The heel counter is biased in an up position (106) and a down position (108). When a foot interacts with the heel counter, the heel counter is positioned away from the up position towards the down position for facilitating access of a foot to the opening. Subsequently, when the foot is fully inserted into the cavity, the heel counter returns to the up position for engaging the heel of the foot in order for preventing disengagement of the foot from the cavity.

公开(公告)号：DE202007000810U1

公开(公告)日：2007-05-10

申请号：DE202007000810

申请日：2007-01-19

Applicant: WANG CHING TING

IPC: A47C7/00 ,  A47C19/00

Abstract: A modular frame (2) has a specific positioned groove having a cross section with a small opening, including a dovetail groove. A supporting body has a cross section with the same shape as a groove as well as multiple side rods. A metal rod fits in the supporting body. A connector has two hooks to engage in two corresponding rods.

公开(公告)号：DE10048196A1

公开(公告)日：2002-02-14

申请号：DE10048196

申请日：2000-09-28

Applicant: LEE CHING TING ,  OPTO TECH CORPORATTION HSINCHU

Inventor： LEE CHING-TING

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L29/43 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01S5/323 ,  H01S5/343

Abstract: Production of a III-V compound semiconductor based on gallium nitride comprises: (i) preparing a substrate (1) having two main surfaces; Production also comprises: (ii) forming the semiconductor stacked structure on the first main surface which joins an active layer (5) and a III-V compound semiconductor layer (6, 7) based on p-gallium nitride via a III-V compound semiconductor layer (3, 4); (iii) etching the stacked structure to expose a part of the n-semiconductor layer (3); (iv) forming a first electrode (8A) on the n-semiconductor layer, the electrode having an ohmic contact layer (81), a barrier layer (83) and a contact dot layer (84); (v) tempering to reduce the contact resistance between the first electrode and the n-semiconductor layer and simultaneously activating the p-semiconductor layer; and (vi) forming a second electrode on the p-semiconductor layer. Preferred Features: The first electrode is made of titanium/aluminum/platinum/gold. The tempering process is carried out 400-950 deg C.

公开(公告)号：TWM518937U

公开(公告)日：2016-03-21

申请号：TW103223201

申请日：2014-12-29

Applicant: 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

Inventor： 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

IPC: A47G21/18

公开(公告)号：TWM581864U

公开(公告)日：2019-08-11

申请号：TW108202585

申请日：2019-03-04

Applicant: 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

Inventor： 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

IPC: A47G19/22

公开(公告)号：TWD195776S

公开(公告)日：2019-02-01

申请号：TW107302689

申请日：2018-05-11

Applicant: 賴靖婷 ,  LAI, CHING TING ,  李亭儀 ,  LEE, TING YI ,  李伊筑 ,  LEE, YI CHU ,  吳郁琳 ,  WU, YU LIN ,  莊慶昌 ,  CHUANG, CHING CHANG

Designer： 莊慶昌 ,  CHUANG, CHING CHANG ,  李亭儀 ,  LEE, TING YI ,  賴靖婷 ,  LAI, CHING TING ,  李伊筑 ,  LEE, YI CHU ,  吳郁琳 ,  WU, YU LIN

公开(公告)号：TWM550097U

公开(公告)日：2017-10-11

申请号：TW106202837

申请日：2017-03-01

Applicant: 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

Inventor： 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

IPC: A47G21/18

公开(公告)号：TWM502412U

公开(公告)日：2015-06-11

申请号：TW103211634

申请日：2014-07-01

Applicant: 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

Inventor： 張靜婷 ,  CHANG, CHING TING ,  王清華 ,  WANG, CHING HUA

IPC: A47G21/18