Method for passivating semiconductor substrate
    3.
    发明专利
    Method for passivating semiconductor substrate 有权
    用于钝化半导体衬底的方法

    公开(公告)号:JP2005005280A

    公开(公告)日:2005-01-06

    申请号:JP2003143908

    申请日:2003-05-21

    Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a film which protects a semiconductor device against water and reduces reflection of incident light.
    SOLUTION: An SiNx:H layer is formed on a semiconductor substrate by PECVD method comprising a step for placing a substrate (1) in a processing chamber (5) having specified dimensions of internal processing chamber, e.g. at least one internal length, internal width, internal height and/or inside diameter, a step for sustaining the pressure in the processing chamber at a relatively low level, a step for sustaining the processing temperature of the substrate (1) at a specified level, a step for generating plasma (P) from at least on plasma sustention source (3) fixed to the processing chamber (5) while spaced apart by a specified distance (L) from the surface of the substrate, a step for touching at least a part of the plasma (P) generated from the plasma sustention source (3) to the surface of the substrate, and a step for supplying a flow of cyan and ammonia to a part of the plasma (P).
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种用于形成保护半导体器件免于水并减少入射光反射的膜的方法。 解决方案:通过PECVD方法在半导体衬底上形成SiNx:H层,该方法包括将衬底(1)放置在具有特定尺寸的内部处理室的处理室(5)中的步骤,例如, 至少一个内部长度,内部宽度,内部高度和/或内部直径,用于将处理室中的压力维持在相对较低水平的步骤,将基板(1)的处理温度维持在指定水平的步骤 至少在固定到处理室(5)上的等离子体维持源(3)上产生等离子体(P)的步骤,同时与衬底的表面隔开一定距离(L),至少用于接触的步骤 从等离子体维持源(3)产生到基板表面的等离子体(P)的一部分,以及向等离子体(P)的一部分供给青色和氨流的步骤。 版权所有(C)2005,JPO&NCIPI

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