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    GaN-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME
    1.
    发明专利
    GaN-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME 审中-公开
    基于GaN的化合物半导体发光元件及其制造方法

    公开(公告)号：JP2014179654A

    公开(公告)日：2014-09-25

    申请号：JP2014117745

    申请日：2014-06-06

    Applicant: Seoul Viosys Co Ltd ,  ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. ,  Postech Foundation ,  ポステック・ファウンデーション

    Inventor： LEE JONG-LAM

    IPC: H01L33/10 ,  H01L33/44 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44

    Abstract: PROBLEM TO BE SOLVED: To provide a vertical type GaN light emitting element capable of improving characteristics of a horizontal type light emitting element by a metal protection film layer and a metal support layer.SOLUTION: A thick metal protection film layer 1100 of 10 micron or more is formed on the side surface and/or the lower surface of a vertical type GaN-LED, so that an element can be protected from an external impact and chip separation can be easily performed. And also, a metal substrate is used instead of a sapphire substrate so that heat that is generated at the time of element operation can be easily released, thereby suitable for use in a high output element. Thus, an element having improved optical output characteristics can be manufactured. A metal support layer 1900 is formed so that a phenomenon such that the element is distorted at the time of chip separation or damaged by an impact can be prevented. A p-type electrode 1200 is partially formed in a network on a p-GaN 1300, so that radiation of photon formed in an active layer 1400 toward an n-GaN layer 1500 can be maximized.

    Abstract translation: 要解决的问题：提供一种能够通过金属保护膜层和金属支撑层改善水平型发光元件的特性的垂直型GaN发光元件。解决方案：10微米的厚金属保护膜层1100或 在垂直型GaN-LED的侧面和/或下表面上形成更多的元素，从而可以保护元件免受外部冲击，并且可以容易地进行芯片分离。 而且，使用金属基板代替蓝宝石基板，能够容易地释放元件运转时产生的热量，适合用于高输出元件。 因此，可以制造具有改善的光输出特性的元件。 形成金属支撑层1900，从而可以防止在芯片分离时或元件被冲击损坏时元件变形的现象。 p型电极1200部分地形成在p-GaN 1300上的网络中，使得在有源层1400中形成的朝向n-GaN层1500形成的光子的辐射可以最大化。

    Substrate, manufacturing method, diagnostic system, and detecting method
    2.
    发明专利
    Substrate, manufacturing method, diagnostic system, and detecting method 有权
    基板，制造方法，诊断系统和检测方法

    公开(公告)号：JP2010151828A

    公开(公告)日：2010-07-08

    申请号：JP2010025682

    申请日：2010-02-08

    Applicant: Posco ,  Postech Foundation ,  ポスコ ,  ポステック ファンデーション

    Inventor： PARK JOON WON ,  HONG BONG JIN ,  CHOI YOUNG SEO ,  OH SOON JIN ,  CHOI KWAN YONG

    IPC: G01N33/543 ,  C12N15/09 ,  C12Q1/68 ,  G01N33/53 ,  G01N33/547 ,  G01N33/574

    Abstract: PROBLEM TO BE SOLVED: To provide a substrate where the size of a molecule binding to a ligand is controlled, and preferably conical compound is bound. SOLUTION: An application of a substrate is disclosed, which includes a molecular film of dendrimer macromolecule in which the size of a uniform spacer is controlled, which includes a polymer including a branched portion and a linear portion, wherein abundant terminals of the branched potion bind to the substrate and the terminal of the linear portion is functionalized. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供控制与配体结合的分子的尺寸的基底，优选结合锥形化合物。 解决方案：公开了一种基板的应用，其包括树枝状大分子的分子膜，其中均匀间隔物的尺寸被控制，其包括包含分支部分和直链部分的聚合物，其中丰富的末端 分支药剂结合到基底上，线性部分的末端被官能化。 版权所有（C）2010，JPO＆INPIT

    T-gate forming method for high electron mobility transistor and gate structure thereof
    3.
    发明专利
    T-gate forming method for high electron mobility transistor and gate structure thereof 有权
    用于高电子移动性晶体管的门极形成方法及其门结构

    公开(公告)号：JP2008118087A

    公开(公告)日：2008-05-22

    申请号：JP2007050000

    申请日：2007-02-28

    Applicant: Postech Academy-Industry Foundation ,  Postech Foundation ,  ポステック・アカデミー‐インダストリー・ファウンデーション ,  ポステック・ファウンデーション

    Inventor： JEONG YOON-HA ,  LEE KANG-SUNG ,  KIM YOUNG-SOO ,  HONG YUN-KI ,  JUNG SUNG-WOO

    IPC: H01L21/338 ,  H01L21/027 ,  H01L29/812

    CPC classification number: H01L29/7787 ,  H01L29/42316 ,  H01L29/66462

    Abstract: PROBLEM TO BE SOLVED: To provide a T-gate forming method for a high electron mobility transistor and a gate structure thereof. SOLUTION: The T-gate forming method for the high electron mobility transistor includes: a first step of coating a semiconductor substrate with a first, a second and a third resist, each having an electron beam sensitivity different from each other; a second step of performing a first exposure process by using an electron beam and then selectively developing the third resist; a third step of defining a gate head area 402 by selectively developing the second resist to have a developed width relatively wider than that of the selectively developed third resist; a fourth step of performing a second exposure process by using an electron beam on the semiconductor substrate having the third resist and second resist selectively developed and then selectively developing the first resist at a temperature relatively lower than in the development of the second and the third steps; and a fifth step of depositing metallic materials along the selectively developed resists and then removing them to form a T-gate having the gate head and a gate foot 404. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于高电子迁移率晶体管的T形栅形成方法及其栅极结构。 解决方案：用于高电子迁移率晶体管的T形栅形成方法包括：第一步骤，用具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂涂覆半导体衬底; 第二步骤，通过使用电子束进行第一曝光处理，然后选择性地显影第三抗蚀剂; 通过选择性地显影所述第二抗蚀剂以使显影宽度相对于所述选择性显影的第三抗蚀剂的显影宽度相对宽度来限定栅极头区域402的第三步骤; 第四步骤，通过在具有第三抗蚀剂和第二抗蚀剂的半导体衬底上使用电子束进行第二曝光处理，所述第二曝光选择性地显影，然后在比第二和第三步骤的显影中相对低的温度下选择性地显影第一光刻胶 ; 以及第五步，沿着选择性显影的抗蚀剂沉积金属材料，然后去除它们以形成具有栅极头和栅极脚404的T形栅极。（C）2008，JPO和INPIT

    Method of manufacturing single-crystal conjugate polymer nanostructure by surface-inducted self-assembly
    7.
    发明专利
    Method of manufacturing single-crystal conjugate polymer nanostructure by surface-inducted self-assembly 审中-公开
    通过表面诱导自组装制造单晶共轭聚合物纳米结构的方法

    公开(公告)号：JP2008053265A

    公开(公告)日：2008-03-06

    申请号：JP2006225107

    申请日：2006-08-22

    Applicant: Postech Academy-Industry Foundation ,  Postech Foundation ,  ポステック・アカデミー‐インダストリー・ファウンデーション ,  ポステック・ファウンデーション

    Inventor： CHO KILWON ,  KIM DO HWAN

    IPC: H01L51/40 ,  B82B1/00 ,  B82B3/00 ,  H01L29/06 ,  H01L51/05 ,  H01L51/30

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a single-crystal conjugate high polymer nanostructure, by self-seeding a self-assembly that can be arranged regularly in a large area through a surface-induced selective self-assembly process, and is useful for next-generation supramolecular organic electronic elements, such as high-performance and highly-integration supramolecular transistors, supramolecular light-emitting elements, supramolecular biosensors. SOLUTION: The single-crystal conjugate polymer nanostructure that is grown by surface-induced self-assembly can be arranged regularly in a large area by a selective surface-induced self-assembly process. It exhibits a low electrical resistance and superior field effect, so that it can be applied usefully to next-generation supramolecular organic electronic elements, such as high-performance and high-integration supramolecular transistors, supramolecular light-emitting elements, supramolecular biosensors. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供单晶共轭高分子纳米结构体的制造方法，可以通过表面诱导的选择性自组装方法自我接种可以大面积规则排列的自组装 并且可用于下一代超分子有机电子元件，如高性能和高度集成的超分子晶体管，超分子发光元件，超分子生物传感器。 解决方案：通过表面诱导的自组装生长的单晶共轭聚合物纳米结构可以通过选择性表面诱导的自组装工艺在大面积上规则地布置。 它具有低电阻和优异的场效应，可以有效地应用于下一代超分子有机电子元件，如高性能和高集成度的超分子晶体管，超分子发光元件，超分子生物传感器。 版权所有（C）2008，JPO＆INPIT

    Nanoporous tungsten carbide catalyst and preparation method thereof
    8.
    发明专利
    Nanoporous tungsten carbide catalyst and preparation method thereof 有权
    纳米碳纳米管催化剂及其制备方法

    公开(公告)号：JP2007275883A

    公开(公告)日：2007-10-25

    申请号：JP2007097266

    申请日：2007-04-03

    Applicant: Postech Academy-Industry Foundation ,  Postech Foundation ,  ポステック・アカデミー‐インダストリー・ファウンデーション ,  ポステック・ファウンデーション

    Inventor： LEE JAE SUNG ,  JUNG MOOYOUNG ,  RAMAN GANESAN ,  KIM YOUNGKWON

    IPC: B01J27/22 ,  B01J35/04 ,  B01J35/10 ,  B01J37/08 ,  B01J37/10 ,  C01B32/949 ,  H01M4/90

    CPC classification number: B01J27/22 ,  H01M4/90 ,  H01M4/92 ,  H01M4/925 ,  H01M8/086 ,  H01M8/1009 ,  Y02E60/523 ,  Y02P70/56

    Abstract: PROBLEM TO BE SOLVED: To provide a nanoporous tungsten carbide catalyst that can be used as an electrode of a fuel cell, and a preparation method thereof. SOLUTION: Provided are the nanoporous tungsten carbide catalyst, which includes tungsten carbide crystalline particles and has nanopores of a mean pore diameter ranging from 2 nm to 5 nm and a nanopore volume of 0.08 to 0.25 cm 3 per gram of the catalyst, the preparation method thereof, an electrode and a fuel cell, such as a direct methanol fuel cell and a polymer electrolyte membrane fuel cell, to which the nanoporous tungsten carbide catalyst is applied. The nanoporous tungsten carbide catalyst has high electrochemical activity and enhanced resistance to poisoning by carbon monoxide. This catalyst can keep high activity even when used as the electrode of the fuel cell for a long period of time. Since this catalyst has a wide surface area, a metallic active component can be dispersed suitably in this catalyst and consequently a metallic active component-supported catalyst can exhibit higher catalytic activity even when the metallic active component of the amount smaller than that of the conventional noble metal catalyst is supported. The electrode and the fuel cell employing this catalyst can be manufactured at lower costs, respectively. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供可用作燃料电池的电极的纳米多孔碳化钨催化剂及其制备方法。 解决方案：提供纳米多孔碳化钨催化剂，其包括碳化钨结晶颗粒并且具有平均孔径范围为2nm至5nm和纳米孔体积为0.08至0.25cm 3（SP）的纳米孔 >每克催化剂，其制备方法，电极和燃料电池，例如直接甲醇燃料电池和聚合物电解质膜燃料电池，其中应用纳米多孔碳化钨催化剂。 纳米多孔碳化钨催化剂具有高电化学活性和增强的抗一氧化碳中毒性。 即使长时间用作燃料电池的电极，该催化剂也能保持高的活性。 由于该催化剂具有较宽的表面积，所以金属活性成分可以适当地分散在该催化剂中，因此即使金属活性成分的量少于常规贵金属的金属活性成分，金属活性成分负载型催化剂也能够表现出更高的催化活性 金属催化剂。 可以分别以较低的成本制造使用该催化剂的电极和燃料电池。 版权所有（C）2008，JPO＆INPIT

    Gan-based compound semiconductor light-emitting element, and method of manufacturing the same
    9.
    发明专利
    Gan-based compound semiconductor light-emitting element, and method of manufacturing the same 审中-公开
    基于GAN的化合物半导体发光元件及其制造方法

    公开(公告)号：JP2012124523A

    公开(公告)日：2012-06-28

    申请号：JP2012035499

    申请日：2012-02-21

    Applicant: Postech Foundation ,  Seoul Opto Devices Co Ltd ,  ソウル オプト デバイス カンパニー リミテッド ,  ポステック・ファウンデーション

    Inventor： LEE JONG-LAM

    IPC: H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

    CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44

    Abstract: PROBLEM TO BE SOLVED: To provide a vertical type GaN light-emitting element capable of improving characteristic of a horizontal type light-emitting element by a metal protection film layer and a metal support layer, related to a GaN-based compound semiconductor light-emitting element and a method of manufacturing the same.SOLUTION: A thick metal protection film layer of 10 micron or more is formed on the side surface and/or the lower surface of a vertical type GaN-LED, so that an element can be protected from external impact and chip separation can be easily performed. And also, a metal substrate is used instead of a sapphire substrate so that heat that is generated at the time of element operation can be easily released, thereby suitable for use in a high output element. Thus, an element having improved optical output characteristic can be manufactured. A metal support layer is formed so that phenomenon such that the element is distorted at the time of chip separation or damaged by impact can be prevented. A p-type electrode is partially formed in network on a p-GaN, so that radiation of photon formed in an active layer toward an n-GaN layer can be maximized.

    Abstract translation: 要解决的问题：提供一种能够通过金属保护膜层和金属支撑层改善水平型发光元件的特性的垂直型GaN发光元件，涉及GaN基化合物半导体 发光元件及其制造方法。 解决方案：在垂直型GaN-LED的侧表面和/或下表面上形成10微米或更厚的厚金属保护膜层，从而可以保护元件免受外部冲击和芯片分离 容易执行。 而且，使用金属基板代替蓝宝石基板，能够容易地释放元件运转时产生的热量，适合用于高输出元件。 因此，可以制造具有改善的光学输出特性的元件。 形成金属支撑层，从而可以防止在芯片分离时元件变形或受冲击损坏的现象。 p型电极部分地形成在p-GaN上的网络中，使得在有源层中形成的朝向n-GaN层形成的光子的辐射可以最大化。 版权所有（C）2012，JPO＆INPIT

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