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    Quantum dot laser
    1.
    发明专利
    Quantum dot laser 审中-公开
    量子激光器

    公开(公告)号：JP2007318165A

    公开(公告)日：2007-12-06

    申请号：JP2007187696

    申请日：2007-07-18

    Applicant: Stc Unm ,  エスティーシー. ユーエヌエムStc.Unm

    Inventor： STINTZ ANDREAS ,  VARANGIS PETROS N ,  MALLOY KEVIN J ,  LESTER LUKE F ,  NEWELL TIMOTHY C ,  LI HUA

    IPC: H01S5/343 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/143 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

    Abstract: PROBLEM TO BE SOLVED: To provide a technology for forming self-assembled quantum dots having desirable optical characteristics. SOLUTION: The quantum dots are self-assembled InAs quantum dots 406 formed in InGaAs quantum wells 404 that are grown on a GaAs substrate by molecular beam epitaxy. A first AlGaAs or GaAs barrier layer 402 is grown. A first InGaAs well layer 404 is grown on the first barrier layer. A sufficient monolayer thickness of InAs is grown on the InGaAs, to form self-assembled islands. A second InGaAs well layer 404 is grown over the InAs islands to embed the quantum dots. A second AlGaAs or GaAs barrier layer 402 is then grown to complete the quantum well. Optical gain characteristics of the quantum well layers are influenced by the compositional uniformity of surrounding layers, the dot size distribution, the dot density, and the number of layers of the dots that can be placed in an active region without exceeding a critical thickness for forming dislocation. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于形成具有期望光学特性的自组装量子点的技术。 解决方案：量子点是通过分子束外延在GaAs衬底上生长的InGaAs量子阱404中形成的自组装InAs量子点406。 生长第一AlGaAs或GaAs阻挡层402。 在第一阻挡层上生长第一InGaAs阱层404。 在InGaAs上生长足够的单层厚度的InAs，以形成自组装岛。 在InAs岛上生长第二InGaAs阱层404以嵌入量子点。 然后生长第二AlGaAs或GaAs阻挡层402以完成量子阱。 量子阱层的光学增益特性受周围层的组成均匀性，点尺寸分布，点密度和可放置在有源区中的点的层数而不超过形成的临界厚度的影响 错位。 版权所有（C）2008，JPO＆INPIT

    Fuel cell
    3.
    发明专利
    Fuel cell 有权
    燃料电池

    公开(公告)号：JP2013048066A

    公开(公告)日：2013-03-07

    申请号：JP2011186500

    申请日：2011-08-29

    Applicant: Daihatsu Motor Co Ltd ,  ダイハツ工業株式会社 ,  Stc Unm ,  エスティーシー. ユーエヌエムStc.Unm

    Inventor： SAKAMOTO TOMOKAZU ,  ASAZAWA KOICHIRO ,  TANAKA HIROHISA ,  ULISES MARTINEZ ,  BARR HALEVI ,  PLAMEN ATANASSOV

    IPC: H01M4/90 ,  H01M8/06 ,  H01M8/10

    CPC classification number: Y02E60/521

    Abstract: PROBLEM TO BE SOLVED: To provide a fuel cell showing excellent power generation performance, the fuel cell using as a fuel a compound containing at least hydrogen and nitrogen, and an anion exchange membrane as an electrolyte layer.SOLUTION: A fuel cell 1 comprises: an electrolyte layer 4 composed of an anion exchange membrane; and a fuel-side electrode 2 and an oxygen-side electrode 3, facing each other across the electrolyte layer. The fuel-side electrode contains nickel, zinc, and rare-earth element as a metal catalyst, the percentage of a nickel content being equal to or more than 20 mol%, a zinc content being 10 to 60 mol%, and a rare-earth element content being equal to or less than 50 mol% with respect to the total number of moles of the nickel, zinc, and rare-earth element. A compound, containing at least hydrogen and nitrogen, such as hydrazine is used as a fuel.

    Abstract translation: 要解决的问题：为了提供一种具有优异的发电性能的燃料电池，使用至少含有氢和氮的化合物作为燃料的燃料电池和作为电解质层的阴离子交换膜。 解决方案：燃料电池1包括：由阴离子交换膜组成的电解质层4; 以及在电解质层上彼此相对的燃料侧电极2和氧气侧电极3。 燃料侧电极含有作为金属催化剂的镍，锌和稀土元素，镍含量的百分比等于或大于20摩尔％，锌含量为10至60摩尔％ 土元素含量相对于镍，锌，稀土元素的总摩尔数为50摩尔％以下。 使用至少含有氢和氮的化合物，例如肼，作为燃料。 版权所有（C）2013，JPO＆INPIT

    Method and apparatus for integrating optical and interferometric lithography to produce complex pattern
    4.
    发明专利
    Method and apparatus for integrating optical and interferometric lithography to produce complex pattern 有权
    用于整合光学和干涉计算以生产复杂图案的方法和装置

    公开(公告)号：JP2010199594A

    公开(公告)日：2010-09-09

    申请号：JP2010069006

    申请日：2010-03-24

    Applicant: Stc Unm ,  Univ Of New Mexico ,  エスティーシー. ユーエヌエムStc.Unm ,  ザ ユニバーシティ オブ ニュー メキシコ

    Inventor： BRUECK S R J ,  CHEN XIAOLAN ,  FRAUENGLASS ANDREW ,  ZAIDI SALEEM H

    IPC: H01L21/027 ,  G03F1/08 ,  G03F7/20

    CPC classification number: G03F7/70125 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70408 ,  G03F7/7045

    Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for defining a single structure (11) on a semiconductor wafer by spatial frequency components. SOLUTION: Some of the spatial frequency components (12-16) are derived by optical lithography and some by interferometric lithography technology. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because a mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components. Thereby fabrication of simpler masks having larger structures is allowed. These methods and apparatus facilitate writing of more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于通过空间频率分量在半导体晶片上定义单个结构（11）的方法和装置。 解决方案：一些空间频率分量（12-16）是通过光学光刻技术得到的，一些通过干涉光刻技术得到。 干涉光刻成像高频分量，而光刻成像低频分量。 光学收集许多空间频率，干涉测量将空间频率移动到高空间频率。 因此，由于掩模不需要提供高空间频率，所以掩模被配置为仅产生低频分量。 从而允许制造具有较大结构的更简单的掩模。 这些方法和装置便于在单一曝光中以更高复杂度的重复和非重复图案的写入，该分辨率高于目前仅使用已知光刻技术的分辨率。 版权所有（C）2010，JPO＆INPIT

    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns
    5.
    发明专利
    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns 审中-公开
    用于集成光学和干涉计算以生产复杂图案的方法和装置

    公开(公告)号：JP2010177687A

    公开(公告)日：2010-08-12

    申请号：JP2010069007

    申请日：2010-03-24

    Applicant: Stc Unm ,  エスティーシー. ユーエヌエムStc.Unm

    Inventor： BRUECK S R J ,  CHEN XIAOLAN ,  FRAUENGLASS ANDREW ,  ZAIDI SALEEM H

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70125 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70408 ,  G03F7/7045

    Abstract: PROBLEM TO BE SOLVED: To provide methods and apparatus for defining a single structure (11) on a semiconductor wafer by spatial frequency components. SOLUTION: Some of the spatial frequency components (12-16) are derived by optical lithography and some by interferometric lithography techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, since the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供用于通过空间频率分量在半导体晶片上定义单个结构（11）的方法和装置。 解决方案：一些空间频率分量（12-16）是通过光学光刻得到的，一些通过干涉光刻技术得到。 干涉光刻成像高频分量，而光刻成像低频分量。 光学收集许多空间频率，干涉测量将空间频率移动到高空间频率。 因此，由于掩模不需要提供高空间频率，掩模被配置为仅产生低频分量，从而允许制造具有较大结构的更简单的掩模。 这些方法和设备有助于在单次曝光中以比目前可用的已知光刻单独的分辨率更高的分辨率编写更复杂的重复和非重复图案。 版权所有（C）2010，JPO＆INPIT

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