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公开(公告)号：KR1020090005763A
公开(公告)日：2009-01-14
申请号：KR1020070069061
申请日：2007-07-10
Applicant: 삼성전자주식회사
CPC classification number: H01J37/32165 , H01J37/321
Abstract: A plasma generating device is provided to maximize the inductance coupling by using the ferrite core of the toroidal shape and channel of the tube shape. A reaction chamber(10) forms a process area. The reaction chamber comprises an exhaust pipe(12) ejecting a pair of the gas nozzle(11) and reaction gas. A vestibular organ chuck(13) is formed inside the reaction chamber. A sample(14) such as the semiconductor wafer and glass substrates is located in the vestibular organ chuck. A window (15) is installed between the reaction chamber, and the high frequency and low frequency antenna systems(20,30). The window delivers the electromagnetic field of the low frequency antenna system and high frequency to the inside of the reaction chamber. The high frequency antenna system comprises a high frequency antenna coil(21), and a radio frequency generator(22) and an impendence matching line(23). The low frequency antenna system comprises a ferrite core(31), a low frequency antenna coil(32), and a low frequency RF generator(33) and an impendence matching line(34). A plasma channel(35) absorbing the RF power is installed at each ferrite core. A plasma source module(37) is comprised by each ferrite core and plasma channel. A controller(40) controls the RF power fraction.
Abstract translation: 提供了一种等离子体产生装置，通过使用环形形状的铁氧体磁芯和管状通道来最大化电感耦合。 反应室（10）形成处理区域。 反应室包括排出一对气体喷嘴（11）和反应气体的排气管（12）。 在反应室内形成前庭器官卡盘（13）。 诸如半导体晶片和玻璃基板的样品（14）位于前庭器官卡盘中。 窗口（15）安装在反应室和高频和低频天线系统（20,30）之间。 该窗口将低频天线系统的电磁场提供给反应室内部。 高频天线系统包括高频天线线圈（21）和射频发生器（22）和阻抗匹配线（23）。 低频天线系统包括铁氧体磁芯（31），低频天线线圈（32）和低频RF发生器（33）和阻抗匹配线（34）。 吸收RF功率的等离子体通道（35）安装在每个铁氧体磁芯上。 等离子体源模块（37）由每个铁氧体磁芯和等离子体通道组成。 控制器（40）控制RF功率分数。
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公开(公告)号：KR101418438B1
公开(公告)日：2014-07-14
申请号：KR1020070069061
申请日：2007-07-10
Applicant: 삼성전자주식회사
CPC classification number: H01J37/32165 , H01J37/321
Abstract: 본 발명은 하나의 반응 챔버를 사용하면서도 플라즈마 발생효율이 높은 플라즈마 발생장치를 제공하는데 있다.
이를 위해 본 발명은 RF 파워를 공급하는 RF 발생기; 상기 RF 파워를 공급받아 전자기장을 발생하는 안테나; 상기 전자기장을 통해 반응가스를 여기 및 이온화하여 플라즈마를 발생하는 반응 챔버; 상기 RF 파워를 흡수하여 상기 플라즈마에 전류를 유도하는 플라즈마 채널을 포함하여 유도결합을 최대화함으로써 플라즈마 발생효율을 높이고 고밀도의 플라즈마를 균일하게 분포시킬 수 있다.-
公开(公告)号：KR1020150064993A
公开(公告)日：2015-06-12
申请号：KR1020130149997
申请日：2013-12-04
Applicant: 삼성전자주식회사
IPC: H01L21/02
CPC classification number: H01J37/3288 , H01J37/32577 , H01J37/32908
Abstract: 가동률을향상시키고유지보수를위한시간과비용을절감할수 있는반도체제조장치를제공한다. 본발명에따른반도체제조장치는가공을위한기판이수용되는챔버, 챔버내에가공환경을제공하는제1 전극및 제1 전극과대응하는제2 전극및 제1 전극및 제2 전극중 적어도하나에연결되는제1 전력전달로드를포함하되, 제1 전력전달로드는제1 일단부와제1 일단부에반대되는제1 타단부사이에제1 도전성응력감쇄부가형성된다.
Abstract translation: 提供一种用于制造半导体的装置，其能够减少维护和修理的时间和成本并提高工作速率。 根据本发明的用于制造半导体的装置包括接收用于处理的基板的腔室，在腔室中提供加工环境的第一电极，对应于第一电极的第二电极和第一电力传输杆， 连接到第一电极和第二电极中的至少一个。 第一动力传递杆具有在第一一端和与第一端相对的第一另一端之间的第一导电应力衰减部分。
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公开(公告)号：KR1020110089926A
公开(公告)日：2011-08-10
申请号：KR1020100009433
申请日：2010-02-02
Applicant: 삼성전자주식회사
IPC: H01L21/677 , H01L21/68 , H01L21/02
CPC classification number: H01L21/67201 , H01L21/67742 , H01L21/68707 , Y10S414/139
Abstract: PURPOSE: A load-lock chamber is provided to include a transport path for a wafer of a load-lock loading part arranged in the inside and optimize arrangements of a transport robot and cassette transport arm, thereby simplifying robot movements for wafer transport and minimize the volume of entire device occupation space. CONSTITUTION: A gateway for input and output of a wafer is formed in housing(110). A load-lock loading part(120) is arranged in the housing and stores a plurality of wafers. A load-lock transport part is arranged in the housing. The wafer loaded in the load-lock loading part is inputted and outputted from a process module by the load-lock transport part. The load-lock transport part takes out the wafer from the process module and stores the wafer to the load-lock transport part.
Abstract translation: 目的：提供一种装载锁定室，以包括布置在内部的装载锁定装载部分的晶片的传送路径，并优化传送机器人和盒式传送臂的布置，从而简化了用于晶片传送的机器人运动，并使 整个设备占用空间的数量。 构成：在壳体（110）中形成用于输入和输出晶片的网关。 负载锁定装载部件（120）布置在壳体中并且存储多个晶片。 外壳中设有装载锁定传送部件。 装载在装载锁定装载部中的晶片由加载锁定传送部从处理模块输入并输出。 加载锁定传送部件从处理模块取出晶片，并将晶片存储到加载锁定传送部件。
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