公开(公告)号：WO9736314A3

公开(公告)日：1997-11-20

申请号：PCT/SE9700449

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L

CPC classification number: H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

Abstract: A transistor of SiC comprises superimposed a drain (13), a highly doped substrate layer (1), a low doped n-type drift layer (2), a p-type base layer being divided into a first lower highly doped base sub-layer (3) and an upper low doped second base sub-layer (4) on top thereof, a highly doped n-type source region layer (6) and a source (11). It also has an insulating layer (8) with a gate electrode (9) thereon arranged on top of the base layer and extending laterally from the source region layer to a n-type layer (7) connected to the drift layer.

公开(公告)号：WO9900849A3

公开(公告)日：1999-03-25

申请号：PCT/SE9801255

申请日：1998-06-26

Applicant: ABB RESEARCH LTD ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  HARRIS CHRISTOPHER

Inventor： BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  HARRIS CHRISTOPHER

IPC: H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

CPC classification number: H01L29/1608 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/7606

Abstract: A semiconductor device of planar structure, consisting of doped silicon carbide (SiC), comprising a pn junction, formed of a first conducting type layer (1) and on top thereof of a second conducting type layer (2), the edge of the second of said layers being provided with an edge termination (JTE) (3), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, where the pn junction and its JTE are covered by a third layer (4).

Abstract translation: 一种平面结构的半导体器件，由掺杂碳化硅（SiC）组成，包括由第一导电类型层（1）形成的pn结，并且在第二导电类型层（2）的顶部上形成第二 的所述层设置有边缘终止（JTE）（3），所述边缘终止（JTE）（3）围绕所述终端的外边界逐步或连续地减小有效片材电荷密度，其中所述pn结及其JTE被第三层（4）覆盖。

公开(公告)号：WO0065636A8

公开(公告)日：2001-07-12

申请号：PCT/SE0000698

申请日：2000-04-12

Applicant: ABB RESEARCH LTD ,  KRUSE LENNART ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  BREITHOLTZ BO

Inventor： KRUSE LENNART ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  BREITHOLTZ BO

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/732 ,  H01L29/737 ,  H01L29/739 ,  H01L29/06 ,  H01L29/12 ,  H01L29/73

CPC classification number: H01L29/1004 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7371 ,  H01L29/739

Abstract: A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semiconductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.

Abstract translation: 具有晶体SiC的至少低掺杂漂移层（14）的双极晶体管包括至少一个半导体材料的第一层（13），其在导带和价带之间具有比相邻层（14）更宽的能隙， 的SiC。

公开(公告)号：WO0065636A3

公开(公告)日：2001-01-25

申请号：PCT/SE0000698

申请日：2000-04-12

Applicant: ABB RESEARCH LTD ,  KRUSE LENNART ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  BREITHOLTZ BO

Inventor： KRUSE LENNART ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  BREITHOLTZ BO

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/732 ,  H01L29/737 ,  H01L29/739 ,  H01L29/06 ,  H01L29/12 ,  H01L29/73

CPC classification number: H01L29/1004 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7371 ,  H01L29/739

Abstract: A bipolar transistor having at least a low doped drift layer (14) of crystalline SiC comprises at least one first layer (13) of a semiconductor material having a wider energy gap between the conduction band and the valence band than an adjacent layer (14) of SiC.

Abstract translation: 至少具有结晶SiC的低掺杂漂移层（14）的双极晶体管包括至少一个半导体材料的第一层（13），所述半导体材料在导带和价带之间具有比相邻层（14）更宽的能隙， 的SiC。

公开(公告)号：WO9802924A3

公开(公告)日：1998-03-05

申请号：PCT/SE9701157

申请日：1997-06-27

Applicant: ABB RESEARCH LTD ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ROTTNER KURT ,  SAVAGE SUSAN

Inventor： BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ROTTNER KURT ,  SAVAGE SUSAN

IPC: H01L29/861 ,  H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L21/329

CPC classification number: H01L29/0619 ,  H01L21/0465 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

Abstract: A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

公开(公告)号：WO9736313A3

公开(公告)日：1997-11-20

申请号：PCT/SE9700448

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

IPC: H01L29/749 ,  H01L21/04 ,  H01L29/10 ,  H01L29/12 ,  H01L29/78 ,  H01L

CPC classification number: H01L29/1095 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7828

Abstract: A field controlled semiconductor device of SiC comprises superimposed in the order mentioned at least a drain (12), a highly doped substrate layer (1) and a low doped n-type drift layer (2). It has also a highly doped n-type source region layer (6) and a source (11) connected thereto. A doped channel region layer (4) connects the source region layer to the drift layer, and a current is intended to flow therethrough when the device is in an on-state. The device has also a gate electrode (9). The channel region layer has a substantially lateral extension and is formed by a low doped n-type layer (4). The gate electrode (9) is arranged to influence the channel region layer from above for giving a conducting channel (17) created therein from the source region layer to the drift layer a substantially lateral extension.

Abstract translation: SiC的场控半导体器件包括至少一个漏极（12），高度掺杂的衬底层（1）和低掺杂n型漂移层（2）的顺序叠加。 它还具有高度掺杂的n型源极区域层（6）和与其连接的源极（11）。 掺杂沟道区域层（4）将源极区域层连接到漂移层，并且当器件处于导通状态时，电流意图流过其中。 该器件还具有栅电极（9）。 沟道区域层具有基本上横向的延伸并且由低掺杂的n型层（4）形成。 栅电极（9）被布置成从上方影响沟道区层，用于从源区域层向漂移层产生导电沟道（17）大致横向延伸。

公开(公告)号：WO9939389A3

公开(公告)日：1999-10-28

申请号：PCT/SE9900136

申请日：1999-02-02

Applicant: ABB RESEARCH LTD ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF

Inventor： BAKOWSKI MIETEK ,  GUSTAFSSON ULF

IPC: H01L29/24 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/7397

Abstract: A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions (16). The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width (Wa) of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer (11) in each individual cell and the lateral cell width (Wc) is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.

Abstract translation: 用于高电压和高开关频率应用的SiC晶体管是MISFET或IGBT。 该晶体管包括多个横向隔开的有源区（16）。 两个相邻有源区的中心距确定晶体管单元的横向宽度。 被定义为连接到每个单元中的栅极绝缘层（11）的漂移层中的区域的累积区域的横向宽度（Wa）和横向单元宽度（Wc）之间的关系被选择为保持 晶体管中的功率损耗是由于在确定的比例之下将功率损耗切换到预定的开关频率和晶体管所设计的导通状态下的晶体管的导通相关的功率损耗的结果。

公开(公告)号：WO9926296A2

公开(公告)日：1999-05-27

申请号：PCT/SE9802048

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract translation: SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部件（1,2），每个部件包括一个或多个SiC半导体层并且串联连接在器件的两个相对端子之间，即子半导体器件（1）能够仅承受阻断状态下的低电压 以及能够承受器件阻断状态下的高电压的电压限制部分（2），并且适于通过在器件处于其阻断状态下取得大部分电压来保护所述子半导体器件。

公开(公告)号：WO9802923A3

公开(公告)日：1998-03-12

申请号：PCT/SE9701156

申请日：1997-06-27

Applicant: ABB RESEARCH LTD ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF

Inventor： BAKOWSKI MIETEK ,  GUSTAFSSON ULF

IPC: H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L21/329 ,  H01L23/60

CPC classification number: H01L29/1608 ,  H01L21/0465 ,  H01L29/0603 ,  H01L29/6606 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers, where the junction is at the edge of the lower doped conducting layer terminated by a depletion region stopper (DRS) which exhibits a charge profile with a stepwise or uniformly increasing total charge and/or effective sheet charge density from a first lowest value to a highest value at the outermost edge (5) of the junction following a radial direction from the main junction towards the outermost edge.

公开(公告)号：WO9736316A3

公开(公告)日：1997-11-20

申请号：PCT/SE9700451

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7455 ,  H01L29/749

Abstract: A field controlled semiconductor device of SiC comprising superimposed in the order mentioned a drain (15), a highly doped substrate layer (1), a highly doped n-type buffer layer (2) and a low doped n-type drift layer (3). It also has a highly doped n-type source region layer (7) and a source (14) connected thereto, a vertical trench (9) from above, a low doped n-type channel region layer (6) extending vertically along a wall (11) of said trench and connecting said source region layer to said drift layer and through which a current is intended to flow when the device is in an on-state. A gate electrode (12) is arranged in said trench at least along said wall and to, upon applying a voltage thereto, influence the charge carrier distribution of said channel region layer and by that the conductivity thereof. The device comprises further a p-type base layer (4) arranged laterally next to said channel region layer at the opposite side thereof with respect to the gate electrode for forming a vertical conducting channel in said channel region layer at a distance from said trench wall.