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公开(公告)号：US10725386B2
公开(公告)日：2020-07-28
申请号：US16421697
申请日：2019-05-24
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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公开(公告)号：US09910366B2
公开(公告)日：2018-03-06
申请号：US14906896
申请日：2014-07-18
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
CPC classification number: G03F7/70633
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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公开(公告)号：US09719945B2
公开(公告)日：2017-08-01
申请号：US14825751
申请日：2015-08-13
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Omer Abubaker Omer Adam
IPC: G03B27/68 , G03B27/52 , G01N21/956 , G03F9/00 , G03F7/20
CPC classification number: G01N21/956 , G03F7/70633 , G03F7/70683 , G03F9/7019 , Y10T428/24802
Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.
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4.发明授权Metrology method and apparatus, lithographic system and device manufacturing method 有权计量方法和设备，光刻系统和器件制造方法公开(公告)号：US09134256B2
公开(公告)日：2015-09-15
申请号：US13799673
申请日：2013-03-13
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Omer Abubaker Omer Adam
IPC: G03B27/54 , G03B27/32 , G01N21/956 , G03F9/00 , G03F7/20
CPC classification number: G01N21/956 , G03F7/70633 , G03F7/70683 , G03F9/7019 , Y10T428/24802
Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.
Abstract translation: 使用光刻工艺在衬底（W）上形成多个靶结构（T）。 每个目标结构包括各自具有特定覆盖偏压的重叠光栅。 通过散射测量，每个光栅的不对称（A）包括由于（i）叠加偏压，（ii）光刻工艺中的覆盖误差（OV）和（iii）覆盖光栅内的底部光栅不对称引起的贡献。 对于具有三个或更多个不同重叠偏置值（例如，-d，0，+ d）的三个或更多个目标结构，获得不对称测量。 知道三种不同的叠加偏差值和叠加误差与不对称性之间的理论曲线关系，可以计算出叠加误差（OV），同时校正底部光栅不对称的影响。 作为示例公开了具有三种和四种不同偏差的偏置方案。 具有不同方向和偏差的光栅可以在复合目标结构中交错。
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公开(公告)号：US10481503B2
公开(公告)日：2019-11-19
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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Patent Agency Ranking
公开(公告)号：US10331043B2
公开(公告)日：2019-06-25
申请号：US15118440
申请日：2015-01-29
Applicant: ASML Netherlands B.V.
Inventor： Henricus Wilhelmus Maria Van Buel , Johannes Marcus Maria Beltman , Xing Lan Liu , Hendrik Jan Hidde Smilde , Richard Johannes Franciscus Van Haren
IPC: G03F7/20 , G01N21/93 , G01N21/956
Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.
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公开(公告)号：US10126662B2
公开(公告)日：2018-11-13
申请号：US15912036
申请日：2018-03-05
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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公开(公告)号：US10042268B2
公开(公告)日：2018-08-07
申请号：US15038535
申请日：2014-11-04
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Martin Jacobus Johan Jak
Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.
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9.发明授权公开(公告)号：US09811003B2
公开(公告)日：2017-11-07
申请号：US15355334
申请日：2016-11-18
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70625 , G03F7/70483 , G03F7/70633 , G03F7/70683
Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
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10.发明申请Method And Apparatus for Measuring a Parameter of a Lithographic Process, Substrate and Patterning Devices for use in the Method 审中-公开用于测量方法中使用的平版印刷工艺，基板和图案化装置的参数的方法和装置公开(公告)号：US20170059999A1
公开(公告)日：2017-03-02
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构。 每个目标结构具有使用第一和第二光刻步骤在衬底上的单个材料层中形成的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻 以接近第一光刻步骤中形成的特征的空间周期的一半的第一偏压量步进，并且在第二目标结构中，在第二光刻步骤中限定的特征相对于第一光刻步骤中限定的特征移位 光刻步骤接近接近所述空间周期的一半的第二偏置量并且不同于第一偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理的参数的测量 第一和第二目标结构。
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