公开(公告)号：JP2010161421A

公开(公告)日：2010-07-22

申请号：JP2010097301

申请日：2010-04-20

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JOERI LOF ,  BUTLER HANS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  KOLESNYCHENKO ALEKSEY ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  RITSEMA ROELOF AEILKO SIEBRAND ,  VAN SCHAIK FRANK ,  SENGERS TIMOTHEUS FRANCISCUS ,  SIMON KLAUS ,  DE SMIT JOANNES THEODOOR ,  STRAAIJER ALEXANDER ,  STREEFKERK BOB ,  BIJLAART ERIK THEODORUS MARIA ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  VAN SANTEN HELMAR ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KROON MARK ,  DEN BOEF ARIE JEFFREY ,  OTTENS JOOST JEROEN ,  MERTENS JEROEN JOHANNES SOPHIA MARIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70883

Abstract: PROBLEM TO BE SOLVED: To provide an immersion type lithography projection apparatus with improved functionality. SOLUTION: The lithography projection apparatus includes: a radiation system Ex, IL also equipped with a radiation source LA, for providing the projection beams PB of radiation; a first object table (mask table) MT connected to a first positioning means, for correctly positioning a mask with respect to a member PL; a second object table (substrate table) WT connected to a second positioning means, for correctly positioning a substrate with respect to the member PL; and a projection system PL for forming an image of the radiated part of the mask MA on the target part C of the substrate W. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的功能的浸没式光刻投影装置。 光刻投影设备包括：辐射系统Ex，IL，其还配备有辐射源LA，用于提供辐射的投影光束PB; 连接到第一定位装置的第一目标表（掩模台）MT，用于相对于构件PL正确定位掩模; 连接到第二定位装置的第二对象台（衬底台）WT，用于相对于构件PL正确定位衬底; 以及用于在基板W的目标部分C上形成掩模MA的辐射部分的图像的投影系统PL。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008311684A

公开(公告)日：2008-12-25

申请号：JP2008239157

申请日：2008-09-18

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LOF JOERI ,  DE SMIT JOANNES THEODOOR ,  RITSEMA ROELOF AEILKO SIEBRAND ,  SIMON KLAUS ,  MODDERMAN THEODORUS MARINUS ,  MULKENS JOHANNES CATHARINUS HU ,  MEIJER HENDRICUS JOHANNES MARI ,  LOOPSTRA ERIK ROELOF

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70341 ,  G03F7/707 ,  G03F7/7085 ,  G03F9/7003 ,  G03F9/7034 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for accurately aligning and/or leveling a substrate in an immersion lithography apparatus.
SOLUTION: A map of the surface of a substrate is generated at a measurement station. The substrate is then moved to a place where a space between a projection lens and the substrate is filled with a liquid. The substrate is then aligned using, for example, a transmission image sensor and, using the previous mapping, the substrate can be accurately exposed. Thus the mapping does not take place in a liquid environment.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在浸没式光刻设备中精确对准和/或调平基板的方法和装置。 解决方案：在测量站产生衬底表面的图。 然后将衬底移动到投影透镜和衬底之间的空间被液体填充的位置。 然后使用例如透射图像传感器对衬底进行对准，并且使用先前的映射可以准确地暴露衬底。 因此，映射不会发生在液体环境中。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008022038A

公开(公告)日：2008-01-31

申请号：JP2007260925

申请日：2007-10-04

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LOF JOERI ,  DE SMIT JOANNES THEODOOR ,  RITSEMA ROELOF AEILKO SIEBRAND ,  SIMON KLAUS ,  MODDERMAN THEODORUS MARINUS ,  MULKENS JOHANNES CATHARINUS HU ,  MEIJER HENDRICUS JOHANNES MARI ,  LOOPSTRA ERIK ROELOF

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70341 ,  G03F7/707 ,  G03F7/7085 ,  G03F9/7003 ,  G03F9/7034 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for accurately aligning and/or leveling a substrate in an immersion lithography apparatus.
SOLUTION: A map of the surface of a substrate is formed at a measurement station. Then the substrate is moved to the place of which space between a projection lens and the substrate is filled with liquid. Subsequently, the substrate is aligned with, for example, a transmission image sensor to expose exactly according to the map formed previously. In this way, the mapping is never carried out under an environment of liquid.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在浸没式光刻设备中精确对准和/或调平基板的方法和装置。 解决方案：在测量站处形成衬底表面的图。 然后将基板移动到投影透镜和基板之间的空间被液体填充的位置。 随后，基板与例如透射图像传感器对准，以根据先前形成的图准确地曝光。 以这种方式，映射从不在液体环境下进行。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2012114485A

公开(公告)日：2012-06-14

申请号：JP2012066781

申请日：2012-03-23

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JOERI LOF ,  BUTLER HANS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  ALEXEI KOLESNE TCHENKO ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  RITSEMA ROELOF AEILKO SIEBRAND ,  VAN SCHAIK FRANK ,  SENGERS TIMOTHEUS FRANCISCUS ,  KLAUS SIMON ,  DE SMIT JOANNES THEODOOR ,  ALEXANDER STOLE YALE ,  STREEFKERK BOB ,  ERIK THEODORUS MARIA BIJLAART ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  HELMAR VAN SANTEN ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KROON MARK ,  DEN BOEF ARIE JEFFREY ,  OTTENS JOOST JEROEN ,  JEROEN JOHANNES SOPHIA MARIA MERTENS

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70883

Abstract: PROBLEM TO BE SOLVED: To provide an immersion-type lithography projection device with improved functionality.SOLUTION: An immersion-type lithography projection device comprises: a radiation systems Ex, IL which are provided with a radiation source LA and supply projection beams PB of radiation; a first object table (mask table) MT connected to first positioning means for correctly positioning a mask with respect to a member PL; a second object table (substrate table) WT connected to second positioning means for correctly positioning a substrate with respect to the member PL; and a projection system PL for forming an image of a radiated part of the mask MA on a target part C of a substrate W.

公开(公告)号：JP2012054601A

公开(公告)日：2012-03-15

申请号：JP2011243513

申请日：2011-11-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JOERI LOF ,  BUTLER HANS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  ALEXEI KOLESNE TCHENKO ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  RITSEMA ROELOF AEILKO SIEBRAND ,  VAN SCHAIK FRANK ,  SENGERS TIMOTHEUS FRANCISCUS ,  KLAUS SIMON ,  DE SMIT JOANNES THEODOOR ,  ALEXANDER STOLE YALE ,  STREEFKERK BOB ,  ERIK THEODORUS MARIA BIJLAART ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  HELMAR VAN SANTEN ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KROON MARK ,  DEN BOEF ARIE JEFFREY ,  OTTENS JOOST JEROEN ,  JEROEN JOHANNES SOPHIA MARIA MERTENS

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70883

Abstract: PROBLEM TO BE SOLVED: To provide an immersion-type lithographic projection apparatus with improved functionality.SOLUTION: The immersion-type lithographic projection apparatus comprises: a radiation system Ex which is provided with a radiation source LA and supplies a radiation projection beam PB; an illumination system IL; a first object table (mask table) MT connected to first positioning means for accurately positioning a mask to a member PL; a second object table (substrate table) WT connected to second positioning means for accurately positioning the substrate to the member PL; and a projection system PL for imaging an irradiated part of a mask MA on a target part C of a substrate W. This apparatus also includes at least one sensor that is disposed so as to be illuminated with a radiation projection beam that has passed through an immersion liquid.

Abstract translation: 要解决的问题：提供具有改进的功能的浸没式光刻投影设备。 浸渍式光刻投影装置包括：放射线系统Ex，其设置有辐射源LA并提供辐射投射光束PB; 照明系统IL; 连接到第一定位装置的第一目标表（掩模台）MT，用于将掩模精确地定位到构件PL; 连接到第二定位装置的第二对象台（衬底台）WT，用于将衬底精确地定位到构件PL; 以及投影系统PL，用于对基板W的目标部分C上的掩模MA的照射部分进行成像。该装置还包括至少一个传感器，其布置成被辐射投影光束照射， 浸液 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010258470A

公开(公告)日：2010-11-11

申请号：JP2010151194

申请日：2010-07-01

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DE SMIT JOANNES THEODOOR ,  BANINE VADIM YEVGENYEVICH ,  BISSCHOPS THEODORUS HUBERTUS J ,  MODDERMAN THEODORUS MARINUS ,  DIERICHS MARCLE MATHIJS T M

IPC: H01L21/027 ,  B01D19/00 ,  G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/708 ,  G03F7/70858

Abstract: PROBLEM TO BE SOLVED: To improve the lithography performance of an apparatus having a liquid that fills the space between a final element of a projection system and a substrate. SOLUTION: A lithographic apparatus and a device manufacturing method make use of a high-refractive index liquid, confined in a reservoir 13, at least partly filling a lithography field between a final element of a projection lens and the substrate. Bubbles forming in the liquid resulting from dissolved atmospheric gases or the gas discharge from an apparatus element exposed to the liquid are detected and removed so that they do not interfere with the exposure, to cause burning defects on the substrate. The detection can be carried out, by measuring the frequency dependence of ultrasonic attenuation in the liquid and the removal of bubbles can be implemented by: degassing and pressurizing the liquid; isolating the liquid from the atmosphere; supplying a continuous flow of liquid through the lithography field using liquids of low surface tension; and further, phase-shifting the ultrasonic standing-wave nodes. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提高具有填充投影系统的最终元件和基板之间的空间的液体的装置的光刻性能。 解决方案：光刻设备和器件制造方法利用限制在储存器13中的高折射率液体，至少部分地填充投影透镜的最终元件与基底之间的光刻场。 检测并除去由溶解的大气气体引起的液体中形成的气泡或暴露于液体的装置元件的气体排出，使得它们不干扰曝光，引起基板上的燃烧缺陷。 可以通过测量液体中超声波衰减的频率依赖性进行检测，并且可以通过以下方式实现气泡的去除：对液体进行脱气和加压; 从大气隔离液体; 使用低表面张力的液体通过光刻领域提供连续的液体流; 并且进一步移相超声波驻波节点。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2007235179A

公开(公告)日：2007-09-13

申请号：JP2007159104

申请日：2007-06-15

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JOERI LOF ,  BUTLER HANS ,  DONDERS SJOERD NICOLAAS LAMBER ,  KOLESNYCHENKO ALEKSEY ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARI ,  MULKENS JOHANNES CATHARINUS HU ,  RITSEMA ROELOF AEILKO SIEBRAND ,  VAN SCHAIK FRANK ,  SENGERS TIMOTHEUS FRANCISCUS ,  SIMON KLAUS ,  DE SMIT JOANNES THEODOOR ,  STRAAIJER ALEXANDER ,  STREEFKERK BOB ,  BIJLAART ERIK THEODORUS MARIA ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  VAN SANTEN HELMAR ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KROON MARK ,  DEN BOEF ARIE JEFFREY ,  OTTENS JOOST JEROEN ,  MERTENS JEROEN JOHANNES SOPHIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70883

Abstract: PROBLEM TO BE SOLVED: To provide an immersion type lithography projection apparatus with improved functionality. SOLUTION: The lithography projection apparatus includes: a radiation system Ex, IL also equipped with a radiation source LA, for providing the projection beams PB of radiation; a first object table (mask table) MT connected to a first positioning means, for correctly positioning a mask with respect to a member PL; a second object table (substrate table) WT connected to a second positioning means, for correctly positioning a substrate with respect to the member PL; and a projection system PL for forming an image of the radiated part of the mask MA on the target part C of the substrate W. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的功能的浸没式光刻投影装置。 光刻投影设备包括：辐射系统Ex，IL，其还配备有辐射源LA，用于提供辐射的投影光束PB; 连接到第一定位装置的第一目标表（掩模台）MT，用于相对于构件PL正确定位掩模; 连接到第二定位装置的第二对象台（衬底台）WT，用于相对于构件PL正确定位衬底; 以及用于在基板W的目标部分C上形成掩模MA的辐射部分的图像的投影系统PL。版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004165666A

公开(公告)日：2004-06-10

申请号：JP2003381339

申请日：2003-11-11

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： LOF JOERI ,  DE SMIT JOANNES THEODOOR ,  RITSEMA ROELOF AEILKO SIEBRAND ,  SIMON KLAUS ,  MODDERMAN THEODORUS MARINUS ,  MULKENS JOHANNES CATHARINUS HU ,  MEIJER HENDRICUS JOHANNES MARI ,  LOOPSTRA ERIK ROELOF

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F7/70341 ,  G03F7/707 ,  G03F7/7085 ,  G03F9/7003 ,  G03F9/7034 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for accurately aligning and/or leveling a substrate in an immersion lithography apparatus.
SOLUTION: A map of the surface of a substrate is formed at a measurement station. Then the substrate W is moved to the place of which space between a projection lens and the substrate is filled with liquid. Subsequently, the substrate is aligned with, for example, a transmission image sensor to expose exactly according to the map formed previously. In this way, the mapping is never carried out under an environment of liquid.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2012114484A

公开(公告)日：2012-06-14

申请号：JP2012066780

申请日：2012-03-23

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JOERI LOF ,  BUTLER HANS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  ALEXEI KOLESNE TCHENKO ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  RITSEMA ROELOF AEILKO SIEBRAND ,  VAN SCHAIK FRANK ,  SENGERS TIMOTHEUS FRANCISCUS ,  KLAUS SIMON ,  DE SMIT JOANNES THEODOOR ,  ALEXANDER STOLE YALE ,  STREEFKERK BOB ,  ERIK THEODORUS MARIA BIJLAART ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  HELMAR VAN SANTEN ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KROON MARK ,  DEN BOEF ARIE JEFFREY ,  OTTENS JOOST JEROEN ,  JEROEN JOHANNES SOPHIA MARIA MERTENS

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70883

Abstract: PROBLEM TO BE SOLVED: To provide an immersion-type lithography projection device with improved functionality.SOLUTION: An immersion-type lithography projection device comprises: a radiation systems Ex, IL which are provided with a radiation source LA and supply projection beams PB of radiation; a first object table (mask table) MT connected to first positioning means for correctly positioning a mask with respect to a member PL; a second object table (substrate table) WT connected to second positioning means for correctly positioning a substrate with respect to the member PL; and a projection system PL for forming an image of a radiated part of the mask MA on a target part C of a substrate W.

Abstract translation: 要解决的问题：提供具有改进的功能的浸没式光刻投影装置。 解决方案：浸没型光刻投影装置包括：辐射系统Ex，IL，其设置有辐射源LA并且提供放射线的投影束PB; 连接到用于相对于构件PL正确定位掩模的第一定位装置的第一对象表（掩模台）MT; 连接到用于相对于构件PL正确定位衬底的第二定位装置的第二对象台（衬底台）WT; 以及用于在基板W的目标部分C上形成掩模MA的辐射部分的图像的投影系统PL。版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012054602A

公开(公告)日：2012-03-15

申请号：JP2011243516

申请日：2011-11-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JOERI LOF ,  BUTLER HANS ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  ALEXEI KOLESNE TCHENKO ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARIA ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  RITSEMA ROELOF AEILKO SIEBRAND ,  VAN SCHAIK FRANK ,  SENGERS TIMOTHEUS FRANCISCUS ,  KLAUS SIMON ,  DE SMIT JOANNES THEODOOR ,  ALEXANDER STOLE YALE ,  STREEFKERK BOB ,  ERIK THEODORUS MARIA BIJLAART ,  CHRISTIAAN ALEXANDER HOOGENDAM ,  HELMAR VAN SANTEN ,  VAN DE KERKHOF MARCUS ADRIANUS ,  KROON MARK ,  DEN BOEF ARIE JEFFREY ,  OTTENS JOOST JEROEN ,  JEROEN JOHANNES SOPHIA MARIA MERTENS

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70883

Abstract: PROBLEM TO BE SOLVED: To provide an immersion-type lithographic projection apparatus with improved functionality.SOLUTION: The immersion-type lithographic projection apparatus comprises: a radiation system Ex which is provided with a radiation source LA and supplies a radiation projection beam PB; an illumination system IL; a first object table (mask table) MT connected to first positioning means for accurately positioning a mask to a member PL; a second object table (substrate table) WT connected to second positioning means for accurately positioning the substrate to the member PL; and a projection system PL for imaging an irradiated part of a mask MA on a target part C of a substrate W. This apparatus also includes at least one sensor that is disposed so as to be illuminated with a radiation projection beam that has passed through an immersion liquid.

Abstract translation: 要解决的问题：提供具有改进的功能的浸没式光刻投影设备。 浸渍式光刻投影装置包括：放射线系统Ex，其设置有辐射源LA并提供辐射投射光束PB; 照明系统IL; 连接到第一定位装置的第一目标表（掩模台）MT，用于将掩模精确地定位到构件PL; 连接到第二定位装置的第二对象台（衬底台）WT，用于将衬底精确地定位到构件PL; 以及投影系统PL，用于对基板W的目标部分C上的掩模MA的照射部分进行成像。该装置还包括至少一个传感器，其布置成被辐射投影光束照射， 浸液 版权所有（C）2012，JPO＆INPIT