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    Fluid handling structure, lithography apparatus and manufacturing method of device
    1.
    发明专利
    Fluid handling structure, lithography apparatus and manufacturing method of device 有权
    流体处理结构，设备的平面设备和制造方法

    公开(公告)号：JP2012182450A

    公开(公告)日：2012-09-20

    申请号：JP2012036033

    申请日：2012-02-22

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： CADEE THEODORUS PETRUS MARIA ,  LAFARRE RAYMOND WILHELMUS LOUIS

    IPC: H01L21/027

    CPC classification number: G03F7/70341 ,  Y10T29/494 ,  Y10T137/8593

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus in which the possibility of containing bubbles is reduced at least partially, and/or the thermal load due to vaporization is reduced at least partially.SOLUTION: A fluid handling structure is configured to supply an immersion liquid to a space defined between a projection system and a counter surface facing the fluid handling structure. The fluid handling structure comprises a main body having a lower surface, a movable member which is movable for the main body, and a self-adjustment mechanism for maintaining a clearance of a specific size between the bottom surface of the movable member and the counter surface, regardless of the size of the clearance between the lower surface and the counter surface.

    Abstract translation: 要解决的问题：提供其中至少部分地减少含有气泡的可能性的光刻设备，和/或至少部分地减少由于汽化引起的热负荷。 解决方案：流体处理结构构造成将浸没液体供应到在投影系统和面向流体处理结构的对置表面之间限定的空间中。 流体处理结构包括具有下表面的主体，可移动用于主体的可动构件，以及用于在可动构件的底面与对置面之间保持特定尺寸的间隙的自调节机构 ，而与下表面和对置表面之间的间隙的大小无关。 版权所有（C）2012，JPO＆INPIT

    Measuring method, measuring apparatus, lithographic apparatus and device manufacturing method
    5.
    发明专利
    Measuring method, measuring apparatus, lithographic apparatus and device manufacturing method 有权
    测量方法，测量装置，平面设备和装置制造方法

    公开(公告)号：JP2012191177A

    公开(公告)日：2012-10-04

    申请号：JP2012027626

    申请日：2012-02-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： DEN BOEF ARIE JEFFREY ,  BEEMS MARCEL HENDRIKUS MARIA ,  CADEE THEODORUS PETRUS MARIA ,  LAFARRE RAYMOND WILHELMUS LOUIS

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: G01B11/14 ,  G01B11/00 ,  G02B21/0048 ,  G02B26/105 ,  G03F7/70625 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To enable accurate measurement without degrading throughput of an alignment sensor.SOLUTION: A measurement optical system comprises an illumination subsystem for illuminating a mark 202 with a radiation spot and a detecting subsystem 580 for detecting radiation diffracted by the mark. A substrate and the measurement optical system move relatively to each other at a first velocity (v) so as to scan the mark while synchronously moving the radiation spot relatively to the reference frame of the measurement optical system at a second velocity (v). The spot scans the mark at a third velocity (v) which is lower than the first velocity to allow more time for accurate position measurements to be acquired. An objective lens 524 remains fixed in relation to the reference frame while a moving optical element 562 imparts the movement of the radiation spot relative to the reference frame.

    Abstract translation: 要解决的问题：使得能够精确测量而不降低对准传感器的生产量。 解决方案：测量光学系统包括用于用辐射点照射标记202的照明子系统和用于检测由标记衍射的辐射的检测子系统580。 基板和测量光学系统以第一速度（v W ）彼此相对移动，以便在相对于参考系的参考系同步移动辐射点的同时扫描标记 测量光学系统处于第二速度（v SPOT ）。 该点以比第一速度低的第三速度（v EFF ）扫描标记，以允许更多时间获取准确的位置测量。 物镜524相对于参考框架保持固定，而移动的光学元件562相对于参考框架传递辐射点的移动。 版权所有（C）2013，JPO＆INPIT

    Cover for substrate table, substrate table for lithographic apparatus, lithographic apparatus, and method for manufacturing device
    6.
    发明专利
    Cover for substrate table, substrate table for lithographic apparatus, lithographic apparatus, and method for manufacturing device 有权
    底片表盖，平版印刷装置用基板，平版印刷装置及制造装置的方法

    公开(公告)号：JP2011205093A

    公开(公告)日：2011-10-13

    申请号：JP2011050948

    申请日：2011-03-09

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LAFARRE RAYMOND WILHELMUS LOUIS ,  ROSET NIEK JACOBUS JOHANNES ,  ZDRAVKOV ALEXANDER NIKOLOV ,  STOUDAM JAN WILLEM ,  BIJL BERNARDUS LAMBERTUS JOHANNES

    IPC: H01L21/027 ,  H01L21/683

    CPC classification number: G03F7/70341 ,  G03F7/70716

    Abstract: PROBLEM TO BE SOLVED: To provide an immersion lithographic apparatus that improves a stability of meniscus to control pattern defects caused by bubbles in an immersion liquid or the like.SOLUTION: In the apparatus, a cover 25 includes a substrate table having a substantially planar upper surface, in which a recess 22 that is configured to receive a substrate W so that the substrate W is supported by the recess 22, is formed. The cover 25 includes a substantially planar body that, in use, extends around the substrate from the upper surface to a peripheral part of an upper major face of the substrate in order to cover a gap between an edge of the recess 22 and an edge of the substrate. The cover includes relatively flexible part that, in use, extends around the substrate in order to be configured to have a rigidity lower than that of the rest part of the cover.

    Abstract translation: 要解决的问题：提供一种浸没式光刻设备，其提高弯液面的稳定性以控制由浸没液体等中的气泡引起的图案缺陷。解决方案：在该设备中，盖25包括具有基本平坦的上表面 表面，其中形成有用于接收基板W以使得基板W被凹部22支撑的凹部22。 盖25包括基本上平面的主体，其在使用中围绕基板从基板的上主表面的上表面延伸到周边部分，以便覆盖凹部22的边缘与边缘之间的间隙 底物。 盖子包括相对柔性的部件，其在使用中围绕基板延伸，以便构造成具有比盖子的其余部分低的刚性。

    Lithographic apparatus, and device manufacturing method
    7.
    发明专利
    Lithographic apparatus, and device manufacturing method 审中-公开
    LITHOGRAPHIC设备和设备制造方法

    公开(公告)号：JP2010103531A

    公开(公告)日：2010-05-06

    申请号：JP2009237989

    申请日：2009-10-15

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LAFARRE RAYMOND WILHELMUS LOUIS ,  VERMEULEN JOHANNES PETRUS MARTINUS ,  ZUIDEMA PATRICK

    IPC: H01L21/027 ,  G03F7/20 ,  H01L21/683

    CPC classification number: G03B27/52 ,  G03F7/707 ,  G03F7/70875

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography projection apparatus which is constructed so as to project patterns from a patterning device to a substrate. SOLUTION: The device includes a clamp including a support constructed to support the patterning device or the substrate and a temperature control unit constructed to control the temperature of the patterning device or the substrate. The clamp is constructed so that the temperature control unit is isolated from the support by a flexible connector to assure that the vibration, contraction and expansion of the temperature control unit do not affect the patterning device and/or the substrate. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种构造成将图案从图案形成装置投影到基板的光刻投影装置。 解决方案：该装置包括夹持件，该夹具包括构造成用于支撑图案形成装置或基板的支撑件和构造成控制图案形成装置或基板的温度的温度控制单元。 夹具被构造成使得温度控制单元通过柔性连接器与支撑件隔离，以确保温度控制单元的振动，收缩和膨胀不影响图案形成装置和/或基板。 版权所有（C）2010，JPO＆INPIT

    Lithography device and method
    8.
    发明专利
    Lithography device and method 有权
    LITHOGRAPHY设备和方法

    公开(公告)号：JP2013135217A

    公开(公告)日：2013-07-08

    申请号：JP2012259496

    申请日：2012-11-28

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： CATHARINA MARIA BEERENS RUUD ANTONIUS ,  VAN DER PASCH ENGELBERTUS ANTONIUS FRANSISCUS ,  VERMEULEN JOHANNES PETRUS MARTINUS ,  CADEE THEODORUS PETRUS MARIA ,  LAFARRE RAYMOND WILHELMUS LOUIS

    IPC: H01L21/027 ,  G01B11/00 ,  H01L21/68

    CPC classification number: G01B11/14 ,  G03F7/70008 ,  G03F7/70775

    Abstract: PROBLEM TO BE SOLVED: To provide a displacement measuring system of high accuracy in a lithography device.SOLUTION: A displacement measuring system comprises at least one retroreflector, and a diffraction grating. The displacement measuring system is configured to measure displacement by providing a first radiation beam to a measuring system, and the diffraction grating diffracts the first radiation beam first time to form plural diffracted beams. At least one retroreflector sequentially turns the diffracted beams in a direction to diffract the beams on the diffraction grating second time. At least one reflector turns the diffracted beams on the diffraction grating at least third time before the diffracted beams are re-coupled to form a second beam. Then, a displacement system is provided with a sensor configured to receive the second beam and determine displacement according to a strength of the second beam.

    Abstract translation: 要解决的问题：在光刻设备中提供高精度的位移测量系统。解决方案：位移测量系统包括至少一个后向反射器和衍射光栅。 位移测量系统被配置为通过向测量系统提供第一辐射束来测量位移，并且衍射光栅首先衍射第一辐射束以形成多个衍射光束。 至少一个后向反射器顺序地将衍射光束沿着衍射光束的方向第二次衍射到衍射光栅上。 在衍射光束被重新耦合以形成第二光束之前，至少一个反射器在衍射光栅上至少三次转动衍射光束。 然后，位移系统设置有被配置为接收第二光束并根据第二光束的强度确定位移的传感器。

    Substrate holder, lithographic apparatus, device manufacturing method, and substrate holder manufacturing method
    9.
    发明专利
    Substrate holder, lithographic apparatus, device manufacturing method, and substrate holder manufacturing method 有权
    基板支架，光刻装置，装置制造方法以及基板支架制造方法

    公开(公告)号：JP2013089956A

    公开(公告)日：2013-05-13

    申请号：JP2012223465

    申请日：2012-10-05

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LAFARRE RAYMOND WILHELMUS LOUIS ,  DZIOMKINA NINA VLADIMIROVNA ,  KARADE YOGESH PRAMOD ,  RHODENBURUK ELIZABETH COLIN ,  PETER VAN DELFT

    IPC: H01L21/027 ,  G03F7/20 ,  H01L21/683

    CPC classification number: G03F7/70716 ,  B05D1/005 ,  G03F7/70341 ,  G03F7/70691 ,  G03F7/707

    Abstract: PROBLEM TO BE SOLVED: To provide a substrate table or substrate holder on which one or more electronic components, such as one or more thin-film components, are to be formed.SOLUTION: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for formation of a thin film stack forming an electronic component. The planarization layer is of substantially uniform thickness, and/or its outer surface has a peak-to-valley distance of less than 10 μm. The planarization layer may be formed by applying two solutions of different concentration. A surface treatment may be applied to burls to repel a solution of material of the planarization layer.

    Abstract translation: 要解决的问题：提供要在其上形成诸如一个或多个薄膜部件的一个或多个电子部件的基板台或基板保持件。 解决方案：用于光刻设备的衬底保持器具有设置在其表面上的平坦化层。 平坦化层提供用于形成形成电子部件的薄膜叠层的光滑表面。 平坦化层具有基本均匀的厚度，和/或其外表面具有小于10μm的峰谷距离。 可以通过施加不同浓度的两种溶液来形成平坦化层。 表面处理可以应用于毛刺以排斥平坦化层的材料溶液。 版权所有（C）2013，JPO＆INPIT

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