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    Calibration substrate and method for calibrating lithographic apparatus
    1.
    发明专利
    Calibration substrate and method for calibrating lithographic apparatus 有权
    校准基板和校准光刻设备的方法

    公开(公告)号：JP2006165576A

    公开(公告)日：2006-06-22

    申请号：JP2005353307

    申请日：2005-12-07

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： OTTENS JOOST JEROEN ,  MERTENS JEROEN JOHANNES SOPHIA ,  DE JONG FREDERICK E ,  GOORMAN KOEN ,  MENCHTCHIKOV BORIS

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70875 ,  G03F7/70516 ,  G03F7/70616

    Abstract: PROBLEM TO BE SOLVED: To provide a calibration method for a lithographic projection apparatus that is not substantially affected by temperature variations thereof, and a calibration substrate used for the calibration. SOLUTION: The calibration substrate includes a first substantially flat surface, a second substantially flat surface that is substantially parallel to the first surface, and an edge that connects the first surface to the second surface. The calibration substrate is made of a material having a small thermal expansion coefficient of, for example less than about 1.0×10 -6 K -1 , to reduce deformation thereof due to temperature variations of the substrate. The method for the calibration includes imaging a marker provided on a patterning device onto a target position of the calibration substrate with a beam of radiation, measuring a property of the image of the marker on the calibration substrate, determining any error between the measured property and an expected property based on the marker and operating parameters of the apparatus, and adjusting at least one of the operating parameters of the apparatus to correct the error. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种基本上不受其温度变化影响的光刻投影设备的校准方法和用于校准的校准基板。 解决方案：校准基板包括第一基本上平坦的表面，基本平行于第一表面的第二基本上平坦的表面，以及将第一表面连接到第二表面的边缘。 校准基板由热膨胀系数小，例如小于约1.0×10 -6 / SP> K -1 的材料制成，以减少由于 基板的温度变化。 用于校准的方法包括使用辐射束将设置在图案形成装置上的标记物设置在校准基板的目标位置上，测量校准基板上的标记的图像的性质，确定测量的属性和 基于装置的标记和操作参数的预期属性，以及调整装置的操作参数中的至少一个以校正误差。 版权所有（C）2006，JPO＆NCIPI

    Method and device for controlling lithographic device
    5.
    发明专利
    Method and device for controlling lithographic device 有权
    用于控制LITHOGRAPHIC设备的方法和设备

    公开(公告)号：JP2011171732A

    公开(公告)日：2011-09-01

    申请号：JP2011026880

    申请日：2011-02-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MENCHTCHIKOV BORIS ,  PADIY ALEXANDRE

    IPC: H01L21/027

    CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525

    Abstract: PROBLEM TO BE SOLVED: To provide an effective system and method for improved online parameterization modeling.
    SOLUTION: A lithographic exposure process is performed on a substrate using a scanner. The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated model parameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated model parameters. This results in a product wafer being exposed with a well controlled overlay.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种改进的在线参数化建模的有效系统和方法。 解决方案：使用扫描仪在基板上进行光刻曝光处理。 扫描仪包括几个子系统。 暴露过程中子系统产生的覆盖错误。 使用散射仪测量覆盖误差以获得覆盖测量。 执行建模以从覆盖测量单独确定估计模型参数的不同子集，例如场失真模型参数，扫描/步进方向模型参数和位置/变形模型参数。 每个子集与由光刻设备的相应特定子系统产生的叠加误差有关。 最后，通过使用其对应的估计模型参数子集来控制扫描仪的特定子系统，在扫描仪中控制曝光。 这导致用良好控制的覆盖物暴露产品晶片。 版权所有（C）2011，JPO＆INPIT

    Lithographic apparatus and method of manufacturing device
    7.
    发明专利
    Lithographic apparatus and method of manufacturing device 有权
    光刻设备及其制造方法

    公开(公告)号：JP2011187951A

    公开(公告)日：2011-09-22

    申请号：JP2011026882

    申请日：2011-02-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： PADIY ALEXANDRE VIKTOROVYCH ,  MENCHTCHIKOV BORIS ,  MIDDLEBROOKS SCOTT ANDERSON

    IPC: H01L21/027

    CPC classification number: G03F7/70633 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70641

    Abstract: PROBLEM TO BE SOLVED: To solve such a problem that the in-field effect of a scanner cannot be treated in details by the parameterization of a scanner stability module, and too many parameters are used in order to describe the scanner effect that is treated.
    SOLUTION: A method of controlling the scanning function of a lithographic apparatus, and a lithographic apparatus configured in such a manner are disclosed. This method includes: a step to determine baseline control parameters pertaining to the scanning function by exposing a monitor wafer; a step to retrieve the baseline control parameters periodically from the monitor wafer; a step to determine a parameter drift from the baseline control parameters; and a step to perform correcting operation based on the determination. A different parameterization is used for control of the scanning control module than for communication between the scanning control module and the lithographic apparatus.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了解决扫描仪的现场效应不能通过扫描仪稳定性模块的参数化被详细处理的问题，并且使用太多参数来描述扫描仪效果， 被治疗。 解决方案：公开了一种控制光刻设备的扫描功能的方法和以这种方式配置的光刻设备。 该方法包括：通过暴露监视晶片来确定与扫描功能有关的基线控制参数的步骤; 从监测晶片周期性地检索基线控制参数的步骤; 从基线控制参数确定参数漂移的一个步骤; 以及基于该确定执行校正操作的步骤。 与扫描控制模块和光刻设备之间的通信相比，使用不同的参数化来控制扫描控制模块。 版权所有（C）2011，JPO＆INPIT

    Lithographic apparatus and device manufacturing method
    8.
    发明专利
    Lithographic apparatus and device manufacturing method 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号：JP2011176309A

    公开(公告)日：2011-09-08

    申请号：JP2011026852

    申请日：2011-02-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： PADIY ALEXANDRE VIKTOROVYCH ,  MENCHTCHIKOV BORIS

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70516 ,  G03F7/70616

    Abstract: PROBLEM TO BE SOLVED: To provide a system whereby the control accuracy of a scanner stability module is improved, while still making the same or a similar limited number of monitor wafers used as at present. SOLUTION: A method for producing at least one monitor wafer for a lithographic apparatus is disclosed. The monitor wafer is used, in combination with a scanning control module to periodically retrieve a measured value defining a baseline from the monitor wafer, and thereby parameter drift from the baseline is determined. By doing so, the drift can be allowed and/or corrected. The baseline is determined by initially exposing the monitor wafers using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafers. A related lithographic apparatus is also disclosed. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种改善扫描仪稳定性模块的控制精度的系统，同时仍然使用与目前相同或相似的有限数量的监视器晶片。 公开了一种用于生产用于光刻设备的至少一个监视晶片的方法。 监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索定义基线的测量值，从而确定基线的参数漂移。 通过这样做，可以允许和/或校正漂移。 通过使用光刻设备首先暴露监视器晶片来确定基线，以在每个监视晶片上执行多次曝光。 还公开了相关的光刻设备。 版权所有（C）2011，JPO＆INPIT

    Optimal correction for thermal deformation of wafer in lithography processing
    9.
    发明专利
    Optimal correction for thermal deformation of wafer in lithography processing 有权
    用于光刻处理中的热变形的最佳校正

    公开(公告)号：JP2008258657A

    公开(公告)日：2008-10-23

    申请号：JP2008188683

    申请日：2008-07-22

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： OTTENS JOOST JEROEN ,  VEN DER SCHOOT HARMEN KLAAS ,  STARREVELD JEROEN P ,  PETRUS MARIA MAAS WOUTERUS J ,  VENEMA WILLEM JURRIANUS ,  MENCHTCHIKOV BORIS

    IPC: G03F9/00 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70616 ,  G03F7/70783 ,  G03F7/70875

    Abstract: PROBLEM TO BE SOLVED: To correct thermal inductive deformation of a wafer substrate in a lithography device. SOLUTION: A correction method includes a stage P204 where a pattern is exposed on a plurality of fields of a substrate according to prespecified exposure information P204 and stages P206 and P208 where properties of fields are measured and deformations of fields induced by thermal effect of exposure processing are evaluated. The present method further includes a stage to determine correction information based on measured properties and stage P210 where the prespecified exposure information is adjusted based on the correction information to compensate thermal inductive field deformation. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了校正光刻设备中的晶片衬底的热感应变形。 解决方案：校正方法包括阶段P204，其中根据预先指定的曝光信息P204在基板的多个场上暴露图案，阶段P206和P208，其中测量场的性质和由热效应引起的场的变形 的曝光处理。 本方法还包括基于测量属性确定校正信息的阶段和阶段P210，其中基于校正信息调整预定曝光信息以补偿热感应场变形。 版权所有（C）2009，JPO＆INPIT

    Method and arrangement for predicting thermally-induced deformations of substrate, and semiconductor device
    10.
    发明专利
    Method and arrangement for predicting thermally-induced deformations of substrate, and semiconductor device 有权
    用于预测基板和半导体器件的热诱导变形的方法和装置

    公开(公告)号：JP2007110130A

    公开(公告)日：2007-04-26

    申请号：JP2006278442

    申请日：2006-10-12

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MENCHTCHIKOV BORIS ,  DE JONG FREDERIK E

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70633 ,  G03F7/70341 ,  G03F7/70425 ,  G03F7/70783 ,  G03F7/70875

    Abstract: PROBLEM TO BE SOLVED: To provide a method for correcting thermally-induced field deformations of a lithographically exposed substrate. SOLUTION: First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate, and a distance between the selected points and an edge of the substrate. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于校正光刻曝光的基底的热诱导场变形的方法。 解决方案：首先，提供一种模型来预测衬底的多个场的热诱导场变形信息。 然后基于由模型预测的热诱导变形信息来修改用于配置场的曝光的预定曝光信息。 最后，根据修改的预先指定的曝光信息，将图案暴露在场上。 通过模型预测热诱导场变形信息包括预测基底上选定点的变形效应。 它基于时间衰减特性，因为能量被传送到基板上，并且所选择的点与基板的边缘之间的距离。 版权所有（C）2007，JPO＆INPIT

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