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    Method for producing photolithography patterning device, computer program, patterning device, method for determining position of target image on or near substrate, measuring device, and lithography device
    2.
    发明专利
    Method for producing photolithography patterning device, computer program, patterning device, method for determining position of target image on or near substrate, measuring device, and lithography device 有权
    用于制造光刻图案装置的方法，计算机程序，图案装置，用于确定目标图像在或靠近基板上的位置的方法，测量装置和图像装置

    公开(公告)号：JP2006259699A

    公开(公告)日：2006-09-28

    申请号：JP2006025174

    申请日：2006-02-02

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： MICKAN UWE ,  MEIJER HENDRICUS JOHANNES MARI

    IPC: G03F1/00 ,  G03F1/24 ,  H01L21/027

    CPC classification number: G03F7/70433 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/70283 ,  G03F7/70666 ,  G03F9/7003 ,  G03F9/7076 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a photolithography patterning device, and a lithography device using the method.
    SOLUTION: Target dimensions and orientations are defined at the stage of creating a patterning device, and the effective shadow angle of the radiation is calculated at a plurality of points. Based on this, the thickness of the absorber layer or the intensity attenuation of the absorber of the patterning device is adjusted so as to compensate the displacement and the dimension errors of the desired image. The lithography device is a projection and exposure device using the patterning device. It is equipped with a measuring device used for determining the target position of the image, and composed so that the position and the dimension errors of the target image can be compensated for, corresponding to the result of the detection by the detector.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种用于制造光刻图案形成装置的方法和使用该方法的光刻装置。 解决方案：在创建图案形成装置的阶段中定义目标尺寸和取向，并且在多个点处计算辐射的有效阴影角。 基于此，调整吸收层的厚度或图案形成装置的吸收体的强度衰减，以补偿期望图像的位移和尺寸误差。 光刻设备是使用图案形成装置的投影和曝光装置。 它配备有用于确定图像的目标位置的测量装置，并且被构成使得可以根据检测器的检测结果来补偿目标图像的位置和尺寸误差。 版权所有（C）2006，JPO＆NCIPI

    Lithographic apparatus with autofocus system
    3.
    发明专利
    Lithographic apparatus with autofocus system 审中-公开
    具有自动对焦系统的平面设备

    公开(公告)号：JP2006179907A

    公开(公告)日：2006-07-06

    申请号：JP2005364266

    申请日：2005-12-19

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： MICKAN UWE ,  VAN DIJSSELDONK ANTONIUS JOHAN

    IPC: H01L21/027 ,  G03F7/207

    CPC classification number: G03F9/7026 ,  G03F9/7065 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus with an autofocus system.
    SOLUTION: The lithographic apparatus comprises a lighting system which supplies a radiation beam, a pattern grant equipment which gives a pattern to the cross-section of the radiation beam and forms a patterned radiation beam, a substrate table configured to hold a substrate, and a projection system that includes a plurality of mirrors arranged to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further includes the autofocus system having (a) a light source, (b) a position sensitive detector, and (c) a light directing arrangement. The light directing arrangement directs a first portion of light from the light source to the projection system, and directs a second portion of light from the light source into the position sensitive detector. After the first portion of light has traveled through the projection system to the substrate and back through the projection system to the light directing arrangement, the first portion of light is directed to the position sensitive detector.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：为光刻设备提供自动对焦系统。 解决方案：光刻设备包括提供辐射束的照明系统，向辐射束的横截面形成图案并形成图案化的辐射束的图案授权设备，被配置为保持衬底的衬底台 以及投影系统，其包括布置成将图案化的辐射束投影到基板的目标部分上的多个反射镜。 光刻设备还包括具有（a）光源，（b）位置敏感检测器和（c）光导布置的自动对焦系统。 导光装置将来自光源的第一部分光引导到投影系统，并将来自光源的第二部分光引导到位置敏感检测器中。 在光的第一部分已经通过投影系统行进到基板并且通过投影系统返回到导光装置之后，第一部分的光被引导到位置敏感检测器。 版权所有（C）2006，JPO＆NCIPI

    Lithography method and device
    5.
    发明专利
    Lithography method and device 审中-公开
    LITHOGRAPHY方法和设备

    公开(公告)号：JP2011166136A

    公开(公告)日：2011-08-25

    申请号：JP2011020368

    申请日：2011-02-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MICKAN UWE ,  VAN OOSTEN ANTON BERNHARD

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: H01L21/0274 ,  G03F7/70566 ,  G03F7/70625 ,  H01L21/28123 ,  H01L29/66795

    Abstract: PROBLEM TO BE SOLVED: To sufficiently irradiate a resist between elements. SOLUTION: A lithography method of irradiating a resist on a substrate in which a region between a first element located on the substrate and a second element located on the substrate is filled with the resist, the first element has a first length, a first width, and a first height, the second element has a second length, a second width, and a second height, the first height is substantially equal to the second height, the first length is substantially in parallel with the second length, and a distance between opposed side walls of the first and second elements is shorter than the wavelength of radiation used for irradiating the resist, the first and second elements determining a region extended in a first direction and filled with the resist. The method includes a step of irradiating the resist with elliptical polarization radiation that is polarized at the first height and the second height perpendicularly to the first direction and substantially perpendicularly to the first and second lengths. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了充分地照射元件之间的抗蚀剂。 解决方案：在基板上照射抗蚀剂的光刻方法，其中位于基板上的第一元件与位于基板上的第二元件之间的区域被抗蚀剂填充，第一元件具有第一长度， 第一宽度和第一高度，第二元件具有第二长度，第二宽度和第二高度，第一高度基本上等于第二高度，第一长度基本上与第二长度平行，并且一 第一和第二元件的相对侧壁之间的距离短于用于照射抗蚀剂的辐射波长，第一和第二元件确定在第一方向上延伸并填充有抗蚀剂的区域。 该方法包括以垂直于第一方向并基本垂直于第一和第二长度的第一高度和第二高度偏振的椭圆偏振辐射照射抗蚀剂的步骤。 版权所有（C）2011，JPO＆INPIT

    Calibration apparatus and method of calibrating radiation sensor in lithographic apparatus
    8.
    发明专利
    Calibration apparatus and method of calibrating radiation sensor in lithographic apparatus 有权
    校准装置及其在光刻设备中校准辐射传感器的方法

    公开(公告)号：JP2006032945A

    公开(公告)日：2006-02-02

    申请号：JP2005193839

    申请日：2005-07-01

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： MOORS JOHANNES HUBERTUS JOSEPH ,  MICKAN UWE

    IPC: H01L21/027 ,  G01J1/00 ,  G01J1/02 ,  G03F7/20

    CPC classification number: G03F7/70558

    Abstract: PROBLEM TO BE SOLVED: To provide a calibration apparatus and a method of calibrating a radiation sensor in a lithographic apparatus.
    SOLUTION: A calibration apparatus 1 is provided for calibrating a radiation sensor RS in a lithographic apparatus. The calibration apparatus includes a window 3 formed of a substantially radiation-transparent material for allowing radiation to pass therethrough to reach the radiation sensor. A first reference sensor 6 is located behind the window having an active surface abutting the window for measuring the intensity of the radiation that passes through the window. A second reference sensor 8 is located at a short distance behind the window having an active surface facing the window. The second reference sensor measures the intensity of the radiation that passes through the window, a first contamination layer 12 formed on the window, and a second contamination layer 13 formed on the active surface of the second reference sensor. The radiation sensor can be calibrated by combining measurements from the first and the second reference sensors.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种校准装置和校准光刻设备中的辐射传感器的方法。 解决方案：提供校准装置1，用于校准光刻设备中的辐射传感器RS。 校准装置包括由基本上辐射透明的材料形成的窗口3，用于允许辐射通过其中以到达辐射传感器。 第一参考传感器6位于窗后面，具有邻接窗口的活动表面，用于测量通过窗口的辐射强度。 第二参考传感器8位于具有面向窗口的有效表面的窗后面的短距离处。 第二参考传感器测量通过窗口的辐射的强度，形成在窗口上的第一污染层12和形成在第二参考传感器的有效表面上的第二污染层13。 可以通过组合来自第一和第二参考传感器的测量来校准辐射传感器。 版权所有（C）2006，JPO＆NCIPI

    Method of manufacturing device
    10.
    发明专利
    Method of manufacturing device 有权
    制造装置的方法

    公开(公告)号：JP2005303315A

    公开(公告)日：2005-10-27

    申请号：JP2005115239

    申请日：2005-04-13

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： MICKAN UWE ,  VAN DIJSSELDONK ANTONIUS JOHAN

    IPC: G03B27/72 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/11 ,  G03F7/70941

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a device, which reduces adverse effects to resolution due to secondary electrons generated in a resist layer in radiation exposure.
    SOLUTION: By providing a conductive material 3 on an upper surface of a radiation photosensitive resist 2 and connecting the resist layer to fixed potential, electric field is applied to the resist layer. The direction of the electric field is substantially perpendicular to the surface of the resist layer.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种制造器件的方法，其减少由于辐射曝光中在抗蚀剂层中产生的二次电子而导致的对分辨率的不利影响。 解决方案：通过在辐射光敏抗蚀剂2的上表面上提供导电材料3并将抗蚀剂层连接到固定电位，将电场施加到抗蚀剂层。 电场的方向基本上垂直于抗蚀剂层的表面。 版权所有（C）2006，JPO＆NCIPI

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