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    Lithography equipment and method
    2.
    发明专利
    Lithography equipment and method 有权
    LITHOGRAPHY设备和方法

    公开(公告)号：JP2008153637A

    公开(公告)日：2008-07-03

    申请号：JP2007300096

    申请日：2007-11-20

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： GUI CHENG-QUN ,  PELLENS RUDY JAN MARIA

    IPC: H01L21/027

    CPC classification number: G03F7/70808

    Abstract: PROBLEM TO BE SOLVED: To provide a method by which a portion with no resist around an outside region of a substrate is provided in the shape of a continuous ring.
    SOLUTION: Ultraviolet rays radiant port UVS irradiates a region of a resist 1 already exposed by i-line ultraviolet radiation, and also a portion of a resist R surrounding the region 1 which was irradiated before. The resist R is irradiated by deep ultraviolet radiant rays, by which a layer 3 is formed. This layer 3 is a polymerized layer formed by cross-linking between other processes. An ICA in the resist R forms ester with a Novolak structure. A remained PAC polymer forms bonding with the Novolak structure (for example, a vulcanization process is caused). The polymerized layer 3 is not dissolved in MIB developer or MIF developer. Moreover, the polymerized layer 3 becomes insensitive to ultraviolet rays.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种以连续环的形状设置在基板的外部区域周围没有抗蚀剂的部分的方法。 解决方案：紫外线辐射端口UVS照射已经被i线紫外线辐射暴露的抗蚀剂1的区域，以及围绕以前照射的区域1的抗蚀剂R的一部分。 抗蚀剂R被深紫外线辐射线照射，由此形成层3。 该层3是通过其他工序之间的交联形成的聚合层。 抗蚀剂R中的ICA形成具有酚醛清漆结构的酯。 剩余的PAC聚合物与酚醛清漆结构形成粘合（例如，引起硫化过程）。 聚合层3不溶于MIB显影剂或MIF显影剂。 此外，聚合层3对紫外线不敏感。 版权所有（C）2008，JPO＆INPIT

    Lithography apparatus and method
    3.
    发明专利
    Lithography apparatus and method 审中-公开
    平面设备和方法

    公开(公告)号：JP2009105397A

    公开(公告)日：2009-05-14

    申请号：JP2008264714

    申请日：2008-10-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： PELLENS RUDY JAN MARIA ,  KEITH FRANK BEST ,  TRAVERS RICHARD JOSEPH ,  HAFNER FREDERICK WILLIAM ,  GREENLEE VINYU

    IPC: H01L21/027 ,  G01B11/00 ,  G03F9/00

    CPC classification number: G03F9/7011 ,  G03F9/7084 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus and a method of performing the calibration of position of a substrate effectively.
    SOLUTION: The method includes a step of guiding the substrate into the prealigner of the lithography apparatus, a step of using a detector to measure the position of an alignment mark formed on the substrate being in the opposite side to the position of the detector, and a step of mounting the substrate on a substrate table of the lithography apparatus after the measurement, in which the substrate is positioned on the substrate table so that the alignment mark formed on the side opposite to the substrate can be visible through the window of the substrate table.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种光刻设备和有效地执行基板位置校准的方法。 解决方案：该方法包括将基板引导到光刻设备的预定位器中的步骤，使用检测器测量形成在基板上的对准标记的位置的步骤，该对准标记位于与 检测器，以及在测量之后将衬底安装在光刻设备的衬底台上的步骤，其中衬底位于衬底台上，使得形成在与衬底相对的一侧上的对准标记可以通过窗口可见 的基片台。 版权所有（C）2009，JPO＆INPIT

    Device, lithography device and manufacturing method of device
    4.
    发明专利
    Device, lithography device and manufacturing method of device 审中-公开
    器件，光刻设备和器件的制造方法

    公开(公告)号：JP2007281458A

    公开(公告)日：2007-10-25

    申请号：JP2007086616

    申请日：2007-03-29

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： KRIKHAAR JOHANNES WILHELMUS MA ,  PELLENS RUDY JAN MARIA ,  MEESTER ARNOUT JOHANNES ,  VAN ZEIJL HENDRIKUS WILHELMUS

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: H01L21/67126 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/67282

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography device capable of producing an alignment marker on the rear side of a substrate.
    SOLUTION: The lithography device is provided with an enclosure for forming a closed environment locally on the rear surface of the substrate, a seal for enclosing tightly the closed environment between the enclosure and the substrate, resist supplying systems (12, 13) for supplying resist, developing systems (14, 15) for supplying developer, and etching systems (16, 17) for etching one or a plurality of markers locally or the like. Further, a mask positioning system and an exposure system are provided also.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种能够在基板的后侧产生取向标记的光刻装置。 解决方案：光刻设备设置有用于在基板的后表面上局部形成闭合环境的外壳，用于封闭封闭环境和基板之间的封闭环境的密封件，抵抗供应系统（12,13） 用于供应抗蚀剂，用于供应显影剂的显影系统（14,15）以及用于蚀刻一个或多个标记局部的蚀刻系统（16,17）等。 此外，还提供了掩模定位系统和曝光系统。 版权所有（C）2008，JPO＆INPIT

    Lithographic method, apparatus and controller
    6.
    发明专利
    Lithographic method, apparatus and controller 审中-公开
    LITHOGRAPHIC方法，装置和控制器

    公开(公告)号：JP2010103527A

    公开(公告)日：2010-05-06

    申请号：JP2009236752

    申请日：2009-10-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VANGHELUWE RIK TEODOOR ,  SINKWITZ STEPHAN EWALD ,  PELLENS RUDY JAN MARIA ,  DAVERVELD RALF MARTINUS MARINUS

    IPC: H01L21/027 ,  G03F7/20 ,  G03F7/26

    CPC classification number: G03B13/04 ,  G03F7/70558

    Abstract: PROBLEM TO BE SOLVED: To provide lithographic apparatus and/or controller, capable of reducing or removing the variations in a critical dimension (CD) over the entire substrate having a pattern.
    SOLUTION: A lithography method includes a step of obtaining a temperature as a function of time, in a bake step after exposure for a different location on a testing substrate on which a chemistry amplification resist is coated. A relation between a dose of radiation on the chemistry amplification resist and a density after exposure of an accelerator generated in a resist layer is acquired. The dose of radiation for obtaining a designated CD is calculated, by using a model for relating the CD with the density after exposure of accelerator and relating the CD with the temperature as a function of time over the entire location. A substrate which is the same as the testing substrate is patterned, by using the dosage of radiation calculated for each of different locations on the substrate. By using this method, uniformity of the CD over the entire substrate with a pattern can be improved.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供能够减少或去除具有图案的整个基板上的临界尺寸（CD）的变化的光刻设备和/或控制器。 解决方案：光刻方法包括在涂覆化学扩增抗蚀剂的测试基底上的不同位置曝光之后的烘烤步骤中获得温度作为时间的函数的步骤。 获得化学放大抗蚀剂上的辐射剂量与在抗蚀剂层中产生的促进剂暴露后的浓度之间的关系。 通过使用用于将CD与加速器曝光后的密度相关联的模型并将CD与作为整个位置的时间的函数的温度相关联的CD来计算用于获得指定CD的辐射剂量。 通过使用针对衬底上的每个不同位置计算的辐射剂量来图案化与测试衬底相同的衬底。 通过使用该方法，可以提高具有图案的整个基板上的CD的均匀性。 版权所有（C）2010，JPO＆INPIT

    Lithographic apparatus and method
    7.
    发明专利
    Lithographic apparatus and method 有权
    LITHOGRAPHIC设备和方法

    公开(公告)号：JP2009147317A

    公开(公告)日：2009-07-02

    申请号：JP2008294810

    申请日：2008-11-18

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： EDART REMI DANIEL MARIE ,  BIJNEN FRANCISCUS GODEFRIDUS C ,  PELLENS RUDY JAN MARIA ,  MAURY PASCALE ANNE

    IPC: H01L21/027

    CPC classification number: G03F9/7049 ,  G03F7/70633 ,  G03F9/7065 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To accurately measure the position of an alignment mark located at a lower surface of a substrate. SOLUTION: A lithography alignment apparatus includes a radiation source constructed to generate radiation of 1,000 nm or a plurality of wavelengths longer than 1,000 nm; a control system 11 constructed to select one or plural infrared ray wavelengths; and a plurality of non focusing detector 15 constructed such that after the radiation is reflected by an alignment mark, a diffraction grating is provided, at least part of the diffraction grating has different diffraction grating periods to detect the radiation. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：精确测量位于基板下表面的对准标记的位置。 解决方案：光刻对准装置包括被构造成产生1000nm或多于1000nm长的波长的辐射的辐射源; 构造成选择一个或多个红外线波长的控制系统11; 以及多个非聚焦检测器15，其被构造成使得在辐射被对准标记反射之后，提供衍射光栅，至少部分衍射光栅具有不同的衍射光栅周期以检测辐射。 版权所有（C）2009，JPO＆INPIT

    Lithography method and patterning device
    8.
    发明专利
    Lithography method and patterning device 有权
    LITHOGRAPHY方法和绘图设备

    公开(公告)号：JP2008042194A

    公开(公告)日：2008-02-21

    申请号：JP2007195647

    申请日：2007-07-27

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： PHILLIPPS GEOFFREY NORMAN ,  GUI CHENG-QUN ,  PELLENS RUDY JAN MARIA ,  LEONARDUS VAN DIJK PAULUS WILH

    IPC: H01L21/027 ,  G03F1/08 ,  G03F7/20

    CPC classification number: G03F7/70475 ,  G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To perform alignment with high accuracy. SOLUTION: A lithography method includes patterning a radiation beam by a pattering device. The patterning device includes at least two image patterning portions and at least two methodology mark patterning portions. The method includes successively projecting at least two image portions of a patterned radiation beam on the target potion of a substrate so that projected image portions are mutually adjoining on the substrate to form a combined image collectively on the substrate. The method includes projecting at least two images respectively, and projecting the methodology mark on the substrate at the same time in the region outside of the combined image to measure the alignment of the methodology mark to define the relative position of at least two figure portions. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：以高精度执行对准。 解决方案：光刻方法包括通过图案化装置对辐射束进行图案化。 图案形成装置包括至少两个图像构图部分和至少两个方法标记图案形成部分。 该方法包括将图案化的辐射束的至少两个图像部分连续地投射在基板的目标部分上，使得投影的图像部分在基板上相互邻接以在基板上共同形成组合图像。 该方法包括分别投影至少两个图像，并且在组合图像之外的区域中同时在基板上投影方法标记，以测量方法标记的对准以限定至少两个图形部分的相对位置。 版权所有（C）2008，JPO＆INPIT

    Lithographic apparatus and lithography method
    9.
    发明专利
    Lithographic apparatus and lithography method 有权
    LITHOGRAPHIC APPARATUS和LITHOGRAPHY方法

    公开(公告)号：JP2007180560A

    公开(公告)日：2007-07-12

    申请号：JP2006352495

    申请日：2006-12-27

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SUTEDJA BUDIMAN ,  PELLENS RUDY JAN MARIA ,  VAN DEN HEUVEL JOHANNES PAULUS ,  LEONARDUS VAN DIJK PAULUS W

    IPC: H01L21/027 ,  G03F9/00 ,  H01L21/683

    CPC classification number: G03F7/70991 ,  G03F7/70708

    Abstract: PROBLEM TO BE SOLVED: To provide a new device and a method for attaching a substrate to a substrate carrier. SOLUTION: An exposure device includes a substrate carrier SC arranged to hold the substrate in an appropriate position using an electrostatic force. The substrate W is placed in contact with an upper end of a protrusion 1 of the substrate carrier SC. A potential difference is set between a metal layer 4 and a diamond-like carbon layer 2, and the electrostatic force for holding the substrate W in the appropriate position, is generated at the protrusion 1. The substrate carrier is formed integrally with a power source, and the device also includes a substrate table for holding the substrate carrier. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种将衬底附着到衬底载体的新器件和方法。 解决方案：曝光装置包括基板载体SC，其被布置成使用静电力将基板保持在适当的位置。 衬底W与衬底载体SC的突起1的上端接触。 在金属层4和金刚石状碳层2之间设置电位差，并且在突起1处产生用于将基板W保持在适当位置的静电力。基板载体与电源 ，并且该装置还包括用于保持衬底载体的衬底台。 版权所有（C）2007，JPO＆INPIT

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