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    Method of measurement, inspection apparatus, and lithographic apparatus
    2.
    发明专利
    Method of measurement, inspection apparatus, and lithographic apparatus 有权
    测量方法，检查装置和平面设备

    公开(公告)号：JP2008166755A

    公开(公告)日：2008-07-17

    申请号：JP2007320546

    申请日：2007-12-12

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SCHAAR MAURITS VAN DER ,  DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS

    IPC: H01L21/66 ,  G03F9/00 ,  H01L21/027

    CPC classification number: G03F7/70633 ,  H01L22/12

    Abstract: PROBLEM TO BE SOLVED: To provide an improved method for detecting an overlay error.
    SOLUTION: A first layer of a substrate includes a plurality of diffraction gratings each having the periodicity of P. A second layer of the substrate includes a plurality of diffraction gratings that overlap a first set of diffraction gratings and having the periodicity of NP (here, N is two or greater integer). The first set of diffraction gratings have a bias +d and a second set of diffraction gratings have a bias -d. Radiation beams are projected to the diffraction gratings and an angular resolution spectrum of the reflected radiation is detected. Next, an overlay error is calculated using the angular resolution spectrum of the reflected radiation.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于检测重叠误差的改进方法。 解决方案：衬底的第一层包括多个周期为P的衍射光栅。衬底的第二层包括与第一组衍射光栅重叠并具有NP的周期性的多个衍射光栅 （这里，N为2以上的整数）。 第一组衍射光栅具有偏压+ d，第二组衍射光栅具有偏压-d。 辐射光束投影到衍射光栅，并检测反射辐射的角度分辨率光谱。 接下来，使用反射辐射的角度分辨率光谱来计算重叠误差。 版权所有（C）2008，JPO＆INPIT

    Method and equipment for characterizing angle-resolved spectral lithography
    3.
    发明专利
    Method and equipment for characterizing angle-resolved spectral lithography 有权
    用于表征角度分辨率光谱的方法和设备

    公开(公告)号：JP2008042200A

    公开(公告)日：2008-02-21

    申请号：JP2007200475

    申请日：2007-08-01

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MOS EVERHARDUS CORNELIS ,  DEN BOEF ARIE JEFFREY ,  SCHAAR MAURITS VAN DER ,  KEIJ STEFAN CAROLUS J A

    IPC: H01L21/027

    CPC classification number: G03B27/42 ,  G01N21/4788 ,  G01N21/95607 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide a compound alignment overlay target given on the substrate so as to enable the measurement of the alignment of a substrate to surroundings and the measurement of the relative alignment of a series of layers on the substrate.
    SOLUTION: The target is provided with an array of a structure at substantially equal intervals except a part of a structure which is an offset with the same size to a first direction and a second part of a structure which is an offset with the same size to the opposite direction. The target on the substrate can be used for the measurement of the alignment, and the same target, which is given to the second layer superimposed on the first layer, can be used for the measurement of the overlay.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供在基板上给出的复合对准覆盖目标，以便能够测量基板与周围环境的对准以及基板上的一系列层的相对取向的测量。 解决方案：除了作为与第一方向具有相同尺寸的偏移的结构的一部分和与第一方向偏移的结构的第二部分之外，目标具有基本相等的间隔的结构的阵列， 相同大小相反的方向。 基板上的目标可以用于对准的测量，并且给予叠加在第一层上的第二层的相同目标可用于覆盖层的测量。 版权所有（C）2008，JPO＆INPIT

    Lithographic apparatus, device manufacturing method, and device manufactured thereby
    4.
    发明专利
    Lithographic apparatus, device manufacturing method, and device manufactured thereby 有权

    公开(公告)号：JP2004343044A

    公开(公告)日：2004-12-02

    申请号：JP2003436600

    申请日：2003-12-16

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS ,  SCHAAR MAURITS VAN DER

    IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

    CPC classification number: G03F9/7019 ,  G03F9/7011

    Abstract: PROBLEM TO BE SOLVED: To provide a method of correcting accurately the errors caused by an alignment discrepancy generated when performing the alignment of a substrate after its processing, even though no calibrating measurement extending over a wide range is performed. SOLUTION: During manufacturing a device, a beam of radiation is projected onto a substrate via a mask. The substrate is aligned with the mask by using an alignment structure on the substrate. The characteristic of the light reflected by the alignment structure is used for determining the relative position of the substrate. The preceding processing of the substrate generates potentially errors in the position determined by the reflection light. The measurement of the characteristic of the reflection light is used for determining the correcting extent required to correct the errors generated by the processing of the substrate. Preferably, the parameters of a physical model of the alignment structure may be estimated from the reflection light, and it is preferred to use them for determining the corrections of the errors. Preferably, it is preferred to measure a plurality of amplitudes of different diffraction peaks for determining the corrections of the errors. COPYRIGHT: (C)2005,JPO&NCIPI

    Method and device for angle-resolved spectroscopic lithography characterization
    6.
    发明专利
    Method and device for angle-resolved spectroscopic lithography characterization 有权
    用于角度分辨光谱光刻特征的方法和装置

    公开(公告)号：JP2008047900A

    公开(公告)日：2008-02-28

    申请号：JP2007206106

    申请日：2007-08-08

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： DEN BOEF ARIE JEFFREY ,  DUSA MIRCEA ,  MOS EVERHARDUS CORNELIS ,  SCHAAR MAURITS VAN DER ,  KEIJ STEFAN CAROLUS J A

    IPC: H01L21/027

    CPC classification number: G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide a simple, alternative method decreasing an influence due to the asymmetric diversity of a sensor.
    SOLUTION: A test system projects multiple radiation beams with different wavelengths and/or polarized radiations onto two targets. A first radiation beam is projected onto a first target to detect a reflected radiation A
    1+ . The first target contains two diffraction gratings each of which has a bias of +d for the other. The first radiation beam is also projected onto a second target which contains two diffraction gratings each of which has a bias of -d for the other to detect a reflected radiation A
    1- . A second radiation beam with a wavelength and/or a polarized radiation different from those of the first radiation beam is projected onto the first target to detect a reflected radiation A
    2+ . The second radiation beam is also projected on the second target to detect a reflected radiation A
    2- . The detected radiations A
    1+ , A
    1- , A
    2+ and A
    2- are used to determine an overlay error.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种简单的替代方法，减少由于传感器的不对称多样性引起的影响。

    解决方案：测试系统将具有不同波长和/或极化辐射的多个辐射束投射到两个目标上。 将第一辐射束投影到第一靶上以检测反射辐射A 1 SB 1 + 。 第一个靶包含两个衍射光栅，每个衍射光栅的另一个具有+ d的偏置。 第一辐射束也被投射到包含两个衍射光栅的第二靶上，每个衍射光栅都具有-d的偏置，另一个具有用于另一个的偏转，以检测反射的辐射A 1。 将具有与第一辐射束不同的波长和/或偏振辐射的第二辐射束投影到第一靶上以检测反射辐射A SB 2 + 。 第二辐射束也投射在第二靶上以检测反射辐射A 2 SB。 使用检测到的辐射A 1 + ，A 1 - ，A 2 + 和A 2 - 重叠错误。 版权所有（C）2008，JPO＆INPIT

    Method and device of analyzing characteristics of spectroscopy lithography which is angle-resolved
    7.
    发明专利
    Method and device of analyzing characteristics of spectroscopy lithography which is angle-resolved 有权
    角度分辨光谱法的分析特征的方法和装置

    公开(公告)号：JP2008021984A

    公开(公告)日：2008-01-31

    申请号：JP2007156383

    申请日：2007-06-13

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SCHAAR MAURITS VAN DER ,  DEN BOEF ARIE JEFFREY ,  MOS EVERHARDUS CORNELIS ,  KEIJ STEFAN CAROLUS J A

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: G03F9/7076 ,  G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide an overlay system capable of recognizing overlay error, being larger than the pitch of an overlay marker lattice, relating to alignment of a projection exposure.
    SOLUTION: The overlay target on a substrate comprises two pairs of lattices. A first pair has a pitch P1, and a second pair has a pitch P2, with each pair containing a lattice oriented almost vertical to the first lattice. When a resist layer is aligned with a layer below it, the same overlay mark is provided on the upper layer. The relative positions of the overlay targets on the upper and lower layers are compared each other by measuring diffraction spectrum after overlay beam is radiated on the overlay targets. By providing two pairs of overlay targets having different pitches in each lattice, such overlay error which is larger than either one pitch in the overlay lattice can be measured.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种覆盖系统，其能够识别与投影曝光的对准有关的重叠标记格子的间距大于重叠误差的重叠误差。 解决方案：衬底上的覆盖目标包括两对晶格。 第一对具有间距P1，第二对具有间距P2，每对包含几何垂直于第一格子的晶格。 当抗蚀剂层与其下面的层对准时，在上层上提供相同的覆盖标记。 通过在覆盖光束在覆盖目标上辐射之后测量衍射光谱，将覆盖目标在上层和下层上的相对位置进行比较。 通过在每个格子中提供具有不同间距的两对覆盖目标，可以测量大于覆盖网格中的任一个间距的覆盖误差。 版权所有（C）2008，JPO＆INPIT

    Lithographic apparatus and device manufacturing method employing double-exposure overlay control
    8.
    发明专利
    Lithographic apparatus and device manufacturing method employing double-exposure overlay control 审中-公开
    使用双重曝光覆盖控制的平面设备和设备制造方法

    公开(公告)号：JP2007258707A

    公开(公告)日：2007-10-04

    申请号：JP2007064287

    申请日：2007-03-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SCHAAR MAURITS VAN DER ,  FRANCISCUS VAN HAREN RICHARD J

    IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/0035 ,  G03B27/42 ,  G03F7/70466 ,  G03F9/7084

    Abstract: PROBLEM TO BE SOLVED: To improve a double-exposure optical technology by relaxing overlay requirements. SOLUTION: The device manufacturing method includes transferring a pattern of a main mark M0 onto a base layer W in order to form an alignment mark; depositing a pattern-receiving layer L2 on the base layer W in a first lithographic process, aligning a first mask including a first pattern PT1 and a local mark pattern LM, by using the main mark M0, and transferring the first pattern PT1 and the local mark pattern LM onto the pattern receiving layer L2; aligning a second mask MS2, including a second pattern PT2 relative to the pattern receiving layer L2 by using the local mark pattern LM; and in a second lithographic process, transferring the second pattern PT 2 onto the pattern-receiving layer L2. The first and second patterns are constituted so as to form an assembled pattern PT3. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：通过放宽覆盖要求来改善双曝光光学技术。 解决方案：装置制造方法包括将主标记M0的图案转印到基层W上以形成对准标记; 在第一光刻工艺中在基层W上沉积图案接收层L2，通过使用主标记M0对准包括第一图案PT1和局部标记图案LM的第一掩模，并将第一图案PT1和局部 标记图案LM到图案接收层L2上; 通过使用局部标记图案LM对准包括相对于图案接收层L2的第二图案PT2的第二掩模MS2; 并且在第二光刻处理中，将第二图案PT 2传送到图案接收层L2上。 第一和第二图案被构造成形成组装图案PT3。 版权所有（C）2008，JPO＆INPIT

    Inspection method and apparatus, lithography apparatus, method of manufacturing lithography processing cell and device, and substrate used for the methods
    9.
    发明专利
    Inspection method and apparatus, lithography apparatus, method of manufacturing lithography processing cell and device, and substrate used for the methods 有权
    检查方法和装置，光刻设备，制造光刻处理细胞和装置的方法以及用于该方法的底物

    公开(公告)号：JP2008258593A

    公开(公告)日：2008-10-23

    申请号：JP2008049050

    申请日：2008-02-29

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MOS EVERHARDUS CORNELIS ,  DEN BOEF ARIE JEFFREY ,  SCHAAR MAURITS VAN DER

    IPC: H01L21/027 ,  G01B11/02 ,  G01B11/24 ,  G03F7/20

    CPC classification number: G03F7/70633

    Abstract: PROBLEM TO BE SOLVED: To provide a method of measuring an overlay and a target which is used for measuring the overlay, requires just a small space on a substrate, and prevents crosstalk between measuring directions. SOLUTION: An overlay marker used with a scatterometer has two two-dimensional gratings overlapping each other. The two gratings have the same pitch, and the duty ratio of the upper grating is smaller than that of the lower grating. Thus it is possible to prevent crosstalk between an X overlay measured value and a Y overlay measured value. The gratings may directly overlap each other or may be displaced from each other so as to be alternately placed in one direction or two directions. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供用于测量覆盖层的覆盖层和目标物的测量方法，在基板上仅需要较小的空间，并且防止测量方向之间的串扰。 解决方案：与散射仪一起使用的叠加标记有两个彼此重叠的二维光栅。 两个光栅具有相同的间距，并且上部光栅的占空比小于下部光栅的占空比。 因此，可以防止X叠加测量值和Y重叠测量值之间的串扰。 光栅可以直接彼此重叠，或者可以彼此相对移位，以便沿一个方向或两个方向交替放置。 版权所有（C）2009，JPO＆INPIT

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