Abstract:
PROBLEM TO BE SOLVED: To provide an arrangement configuration and a method for automatically selecting a substrate alignment mark on a substrate in lithography equipment and an overlay metering target in an overlay metering device. SOLUTION: A memory stores locations of one or a plurality of sets of substrate alignment marks or overlay metering targets available for selection and selection rules to select suitable substrate alignment marks or overlay metering targets from this at least one set. The selection rules are based on experimental or theoretical knowledge about which substrate alignment mark or overlay metering targets locations are optimal based on one or a plurality of selection criteria. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a system and a method for determining the vibration modes relating to a lithographic apparatus and a measure of respective magnitudes thereof. SOLUTION: In the method, vibration-related information is determined by projecting an aerial image at an image position in a projection plane, by mapping the intensity of the aerial image into an image map wherein the image map includes values of coordinates of sampling locations and of the intensity sampled at the respective sampling locations, and by measuring the intensity of the aerial image received through a slot pattern. The method further comprises a step for determining the detection position of an inclined portion of the image map from the image map, a step for measuring the temporal intensity of the aerial image at the detection position of the inclined portion and measuring the relative position between the slot pattern and the image position, and a step for determining vibration-related information relating to the aerial image from the temporal intensity of the aerial image. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a positioning system for a lithographic projector in which accuracy of alignment and/or hardness is improved. SOLUTION: The positioning system for a lithographic apparatus has a positioning radiation source 1, a detection system that has a first detector channel and a second detector channel, and a position determining unit in communication with the detection system. The position determining unit processes information from the first and second detector channels in combination, to determine a position of a positioning mark on a first object relative to a reference position on a second object based on the combined information. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for a lithography projecting apparatus in which accuracy of positioning and/or robust properties is improved.SOLUTION: An alignment system for a lithographic apparatus comprises: a positioning radiation source 1; a detection system having a first detector channel and a second detector channel; and a position determining unit that communicates with the detection system. The position determining unit processes information from the first and second detector channels in combination, and determines a position of a positioning mark on a first object relative to a reference position on a second object, based on the combined information.
Abstract:
PROBLEM TO BE SOLVED: To provide a device manufacturing method that improves the yield. SOLUTION: Deformation of a substrate wafer is measured by comparing positions of a plurality of reference marks with values of a data base after their exposure and process step. For taking into consideration the measured deformation and the compared results in step S1, the development step of an exposure and development step S2 is controlled using the feedforward loop. Then, a position alignment measurement step S3 is performed, in which the alignment relationship between the continuing two layers deposited on the substrate W during consecutive cycles is measured. If the positional control of a latest layer with respect to its preceding layer is insufficient, the latest layer is removed and a new layer is deposited. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate table configured so as to support a substrate comprising at least one substrate mark. SOLUTION: The at least one substrate mark has a position that can be measured using an alignment system. The substrate table comprises an optical system having a magnification factor that is not 1 in order to provide the image of the at least one substrate mark to be measured by the alignment system. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus having excellent alignment reproducibility. SOLUTION: A method for manufacturing the device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective corresponding exposure fields; determining an absolute position of each exposure field from the alignment information for the respective corresponding exposure fields; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an arrangement and a method that automatically select a substrate alignment mark on a substrate in lithography apparatus or overlay metering target in an overlay meter. SOLUTION: A memory stores at least one set of positions of substrate alignment marks or overlay metering targets can be used for selection, and a selection rule for selecting an appropriate substrate alignment mark or overlay metering target from the at least one set. The selection rule is based on at least one of experimental and theoretical pieces of knowledge for optimizing the position of the substrate alignment mark or the overlay metering target according to at least one selection standard. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a device, by which process steps are characterised and yield is improved, using a lithographic equipment. SOLUTION: The method is to monitor deformation of a substrate wafer during treatment of a wafer. After each exposure and treatment process, distortion of the substrate wafer is measured by comparing positions of a plurality of reference marks 20 with values of the database. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an arrangement configuration and a method for automatically selecting a substrate alignment mark on a substrate in lithography equipment and an overlay metering target in an overlay metering device. SOLUTION: A memory stores locations of one or a plurality of sets of substrate alignment marks or overlay metering targets available for selection and selection rules to select suitable substrate alignment marks or overlay metering targets from this at least one set. The selection rules are based on at least one of experimental and theoretical knowledge about which substrate alignment mark or overlay metering targets locations are optimal based on one or a plurality of selection criteria. COPYRIGHT: (C)2009,JPO&INPIT