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    PLASMA MEDIATED ASHING PROCESSES
    1.
    发明申请
    PLASMA MEDIATED ASHING PROCESSES 审中-公开
    等离子体介质吸附过程

    公开(公告)号：WO2012018374A2

    公开(公告)日：2012-02-09

    申请号：PCT/US2011/001324

    申请日：2011-07-27

    Applicant: AXCELIS TECHNOLOGIES INC. ,  LUO, Shijian ,  ESCORCIA, Orlando ,  WALDFRIED, Carlo

    Inventor： LUO, Shijian ,  ESCORCIA, Orlando ,  WALDFRIED, Carlo

    IPC: G03F7/42

    CPC classification number: G03F7/427 ,  H01J2237/3342

    Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

    Abstract translation: 用于从衬底去除有机材料的等离子体介质灰化过程通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含活性氮和活性氧的比例， 大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

    SUBSTANTIALLY NON-OXIDIZING PLASMA TREATMENT DEVICES AND PROCESSES
    4.
    发明申请
    SUBSTANTIALLY NON-OXIDIZING PLASMA TREATMENT DEVICES AND PROCESSES 审中-公开
    主要的非氧化等离子体处理装置和工艺

    公开(公告)号：WO2012148370A1

    公开(公告)日：2012-11-01

    申请号：PCT/US2011/000733

    申请日：2011-04-27

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  WALDFRIED, Carlo ,  GEISSBUHLER, Phillip ,  BERRY, Ivan ,  LUO, Shijian ,  HUSEUNOVIC, Armin

    Inventor： WALDFRIED, Carlo ,  GEISSBUHLER, Phillip ,  BERRY, Ivan ,  LUO, Shijian ,  HUSEUNOVIC, Armin

    IPC: H01J37/32

    CPC classification number: H01L21/31138 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32844 ,  H01J37/32935 ,  Y02C20/30 ,  Y02P70/605

    Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non- oxidizing plasma processes.

    Abstract translation: 用于处理半导体工件的非氧化等离子体处理装置通常包括基本上非氧化气体源; 与非氧化性气体源流体连通的等离子体产生部件; 与等离子体产生部件流体连通的处理室和位于处理室的底壁中心的排气导管。 在一个实施例中，处理室由含有少于0.15重量％铜的铝合金形成; 在其它实施方案中，处理室包括不含铜的材料的涂层，以防止在基本上非氧化等离子体的处理期间形成氢化铜。 在其它实施例中，处理室壁构造成在等离子体处理期间被加热。 还公开了非氧化等离子体工艺。

    PLASMA ASHING PROCESS
    5.
    发明申请
    PLASMA ASHING PROCESS 审中-公开
    等离子流程

    公开(公告)号：WO2002093634A1

    公开(公告)日：2002-11-21

    申请号：PCT/US2002/015165

    申请日：2002-05-14

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： WALDFRIED, Carlo ,  BERRY, Ivan ,  ESCORCIA, Orlando ,  HAN, Qingyuan ,  SAKTHIVEL, Palani

    IPC: H01L21/311

    CPC classification number: H01L21/02071 ,  H01J2237/3342 ,  H01L21/31138

    Abstract: A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.

    Abstract translation: 用于从半导体衬底选择性地灰化光致抗蚀剂和/或后蚀刻残余物的等离子体灰化处理和装置包括在比处理室压力大至少2乇的压力下在等离子体产生区域中产生还原离子密度等离子体; 并将其上具有光致抗蚀剂和/或后蚀刻残余物的晶片表面暴露于还原离子密度等离子体，以从表面选择性地去除光致抗蚀剂和/或后蚀刻残留物，并使表面基本上与将底物暴露于还原 离子密度等离子体。

    APPARATUS AND PROCESS FOR TREATING DIELECTRIC MATERIALS
    7.
    发明申请
    APPARATUS AND PROCESS FOR TREATING DIELECTRIC MATERIALS 审中-公开
    用于处理介电材料的设备和工艺

    公开(公告)号：WO2007001281A1

    公开(公告)日：2007-01-04

    申请号：PCT/US2005/022110

    申请日：2005-06-22

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  WALDFRIED, Carlo ,  GARMER, Christopher ,  ESCORCIA, Orlando ,  BERRY, Ivan ,  SAKTHIVEL, Palanikumaran

    Inventor： WALDFRIED, Carlo ,  GARMER, Christopher ,  ESCORCIA, Orlando ,  BERRY, Ivan ,  SAKTHIVEL, Palanikumaran

    IPC: H01L21/00

    CPC classification number: H01L21/67115

    Abstract: Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

    Abstract translation: 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。

    ULTAVIOLET CURING PROCESSES FOR ADVANCED LOW-K MATERIALS
    8.
    发明申请
    ULTAVIOLET CURING PROCESSES FOR ADVANCED LOW-K MATERIALS 审中-公开
    用于先进低K材料的ULTAVIOLET固化工艺

    公开(公告)号：WO2005010971A2

    公开(公告)日：2005-02-03

    申请号：PCT/US2004/017838

    申请日：2004-06-07

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  WALDFRIED, Carlo ,  HAN, Qingyuan ,  ESCORCIA, Orlando ,  BERRY, III, Ivan, L.

    Inventor： WALDFRIED, Carlo ,  HAN, Qingyuan ,  ESCORCIA, Orlando ,  BERRY, III, Ivan, L.

    IPC: H01L21/312

    CPC classification number: C09D183/02 ,  C09D183/04 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31695

    Abstract: Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50 %. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the LIV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.

    Abstract translation: 低介电常数材料具有改进的弹性模量和材料硬度。 制造这种材料的过程涉及提供介电材料并紫外（UV）固化该材料以产生UV固化的介电材料。 UV固化产生具有改进的模量和材料硬度的材料。 每种改进通常大于或大约50％。 UV固化的电介质材料可以任选地进行UV后处理。 与LIV固化的介电材料相比，UV后处理降低了材料的介电常数，同时保持了改进的弹性模量和材料硬度。 紫外线固化电介质还可以显示出比固化炉工艺更低的总固化热预算。

    PLASMA ASHING PROCESS
    9.
    发明申请
    PLASMA ASHING PROCESS 审中-公开

    公开(公告)号：WO2003010799A3

    公开(公告)日：2003-02-06

    申请号：PCT/US2002/023344

    申请日：2002-07-22

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： HAN, Qingyuan ,  BERRY, Ivan ,  SAKTHIVEL, Palani ,  WALDFRIED, Carlo

    IPC: H01L21/311

    Abstract: A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and /or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.

    PLASMA ASHING PROCESS
    10.
    发明申请
    PLASMA ASHING PROCESS 审中-公开
    等离子流程

    公开(公告)号：WO2005017983A2

    公开(公告)日：2005-02-24

    申请号：PCT/US2004/025962

    申请日：2004-08-11

    Applicant: AXCELIS TECHNOLOGIES INC. ,  WALDFRIED, Carlo ,  ESCORCIA, Orlando ,  HAN, Qingyuan ,  BUCKLEY, Thomas ,  SAKTHIVEL, Palanikumaran

    Inventor： WALDFRIED, Carlo ,  ESCORCIA, Orlando ,  HAN, Qingyuan ,  BUCKLEY, Thomas ,  SAKTHIVEL, Palanikumaran

    IPC: H01L21/00

    CPC classification number: H01L21/02071 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138

    Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.

    Abstract translation: 在半导体衬底存在低k材料的情况下，基本上无氧的无氮等离子体灰化处理用于去除光致抗蚀剂包括通过将等离子体气体组合物暴露于能量源形成等离子体来形成反应性物质。 等离子体气体组成基本上不含氧气和含氮气体。 通过将光致抗蚀剂暴露于基本上无氧和无氮的反应性物质，等离子体通过含有低k材料的下面的基底选择性地除去光致抗蚀剂。 该方法可与含碳低k电介质材料一起使用。

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