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    HIGH PERFORMANCE SOLUTION PROCESSABLE SEMINCONDUCTOR BASED ON DITHIENO [2,3-D:2',3'-D']BENZO[1,2-B:4,5-B'] DITHIOPHENE
    2.
    发明申请
    HIGH PERFORMANCE SOLUTION PROCESSABLE SEMINCONDUCTOR BASED ON DITHIENO [2,3-D:2',3'-D']BENZO[1,2-B:4,5-B'] DITHIOPHENE 审中-公开
    基于DITHIENO [2,3-D：2'，3'-D'] BENZO [1,2-B：4,5-B']二氢苯的高性能溶液可处理的SEMINCONUCTOR

    公开(公告)号：WO2010000670A1

    公开(公告)日：2010-01-07

    申请号：PCT/EP2009/057985

    申请日：2009-06-25

    Applicant: BASF SE ,  MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. ,  KASTLER, Marcel ,  KOEHLER, Silke ,  MUELLEN, Klaus ,  GAO, Peng ,  BECKMANN, Dirk ,  FENG, Xinliang

    Inventor： KASTLER, Marcel ,  KOEHLER, Silke ,  MUELLEN, Klaus ,  GAO, Peng ,  BECKMANN, Dirk ,  FENG, Xinliang

    IPC: C07D495/12

    CPC classification number: H01L51/0074 ,  C07D495/22 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1092 ,  G02B2006/12069 ,  H01L51/0545 ,  H01L51/5048 ,  H05B33/10 ,  H05B33/14 ,  Y02E10/549

    Abstract: Dithienobenzodithiophenes of general formula (I) in which R 1 to R 6 are each independently selected from a) H, b) halogen, c) -CN, d) -NO 2 , e) - OH, f) a C 1-20 alkyl group, g) a C 2-20 alkenyl group, h) a C 2-20 alkynyl group, i) a C 1-20 alkoxy group, j) a C 1-20 alkylthio group, k) a C 1-20 haloalkyl group, I) a -Y- C 3-10 cycloalkyl group, m) a -Y-C 6-14 aryl group, n) a -Y-3-12 membered cyclo- heteroalkyl group, or o) a -Y-5-14 membered heteroaryl group, wherein each of the C 1-20 alkyl group, the C 2-20 alkenyl group, the C 2-20 alkynyl group, the C 3-10 cycloalkyl group, the C 6-14 aryl group, the 3-12 membered cyc- loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1 -4 R 7 groups, wherein R 1 and R 3 and R 2 and R 4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C 1-6 alkyl group, a divalent C 1 - 6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2. The invention also relates to the use of the dithienobenzodithiophenes according to any of claims 1 to 4 as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.

    Abstract translation: 通式（I）的二噻吩并苯并二噻吩，其中R 1至R 6各自独立地选自a）H，b）卤素，c）-CN，d）-NO 2，e）-OH，f）C 1-20烷基， ）C2-20烯基，h）C2-20炔基，i）C1-20烷氧基，j）C1-20烷硫基，k）C1-20卤代烷基，I）a -Y- C3-10环烷基，m）a-Y-C6-14芳基，n）a -Y-3-12元环杂烷基，或o）-Y-5-14元杂芳基，其中各 C 1-20烷基，C 2-20烯基，C 2-20炔基，C 3-10环烷基，C 6-14芳基，3-12元环杂烷基，和5-14 任选被1-4个R 7基团取代，其中R 1和R 3以及R 2和R 4也可以一起形成脂族环状部分，Y独立地选自二价C 1-6烷基，二价C 1-6卤代烷基 ，或共价键; 并且m独立地选自0,1或2.本发明还涉及根据权利要求1至4中任一项所述的二噻吩并苯并噻吩作为半导体或电荷传输材料，作为薄膜晶体管（TFT）或半导体 用于有机发光二极管（OLED）的组件，用于光伏组件或传感器，作为电池中的电极材料，作为光波导或电子照相应用。

    METHOD FOR DEPOSITING A SEMICONDUCTING LAYER FROM A LIQUID
    7.
    发明申请
    METHOD FOR DEPOSITING A SEMICONDUCTING LAYER FROM A LIQUID 审中-公开
    从液体中沉积半导体层的方法

    公开(公告)号：WO2009016107A1

    公开(公告)日：2009-02-05

    申请号：PCT/EP2008/059767

    申请日：2008-07-25

    Applicant: BASF SE ,  VAIDYANATHAN, Subramanian ,  KASTLER, Marcel ,  DÖTZ, Florian

    Inventor： VAIDYANATHAN, Subramanian ,  KASTLER, Marcel ,  DÖTZ, Florian

    IPC: H01L51/05

    CPC classification number: H01L51/0003 ,  H01L51/0068 ,  H01L51/0541

    Abstract: A method for depositing a semiconducting layer comprising: a) providing a substrate having a surface; b) providing a mixture comprising one or more semiconducting compounds and one or more polymeric insulating compounds in a liquid; c) bringing at least part of the surface into contact with the mixture; d) moving a zone of the mixture being in contact with the surface along the surface in a moving direction, said zone providing a concentration gradient in the moving direction by evaporating at least part of the solvent; and e) if necessary, removing the non-evaporated part of the solvent.

    Abstract translation: 一种用于沉积半导体层的方法，包括：a）提供具有表面的衬底; b）在液体中提供包含一种或多种半导体化合物和一种或多种聚合物绝缘化合物的混合物; c）使至少部分表面与混合物接触; d）沿着移动方向沿着表面移动与表面接触的混合物的区域，所述区域通过蒸发至少一部分溶剂而在移动方向上提供浓度梯度; 和e）如果需要，除去未蒸发的溶剂部分。

    PROCESS FOR PREPARING REGIOREGULAR POLY-(3-SUBSTITUTED) THIOPHENES, SELENOPHENES, THIA- ZOLES AND SELENAZOLES
    8.
    发明申请
    PROCESS FOR PREPARING REGIOREGULAR POLY-(3-SUBSTITUTED) THIOPHENES, SELENOPHENES, THIA- ZOLES AND SELENAZOLES 审中-公开
    制备后续多（3-取代的）噻吩，苯丙烯，噻唑和精油的方法

    公开(公告)号：WO2010146013A1

    公开(公告)日：2010-12-23

    申请号：PCT/EP2010/058300

    申请日：2010-06-14

    Applicant: BASF SE ,  Rieke Metals, Inc. ,  KASTLER, Marcel ,  KÖHLER, Silke Annika

    Inventor： KASTLER, Marcel ,  KÖHLER, Silke Annika

    IPC: C08G61/12 ,  H01B1/12 ,  H01L51/00

    CPC classification number: H01B1/127 ,  C08G61/123 ,  C08G61/126 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3229 ,  C08G2261/323 ,  C08G2261/416 ,  C08G2261/417 ,  H01L51/0036

    Abstract: A process for preparing a regioregular homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol by a) reacting a 3-substituted 2,5-dihalothiophene, 2,5-dihaloselenophene, 2,5-dihalothiazol or 2,5-dihaloselenazol with reactive zinc, magnesium and/or an organomagnesium halide to give an organozinc or organomagnesium intermediate containing one halozinc or one halomagnesium group, b) bringing the organozinc or the organomagnesium intermediate into contact with a Ni(II), Ni(O), Pd(II) or Pd(0) catalyst to initiate the polymerization reaction, and c) polymerizing the organozinc or the organomagnesium intermediate to give a regioregular head-to-tail homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol characterized in that the polymerization reaction is carried out at a temperature rising from a lower temperature T 1 to a higher temperature T 2 during a time t 1 , wherein T 1 is in the range of from - 40 to 5 °C and T 2 is in the range of from -20 to 40 °C, wherein T 2 - T 1 is at least 10 °C and the average rate of increase (T 2 -T 1 )/t 1 is in the range of from 0,05 °C/min to 1 °C/min.

    Abstract translation: 制备3-取代噻吩，3-取代的硒吩，3-取代的噻唑或3-取代的硒吩的区域性均聚物或共聚物的方法，通过以下步骤a）使3-取代的2,5-二卤代噻吩，2,5-二卤代硒吩，2 ，5-二卤噻唑或2,5-二卤代硒唑与反应性锌，镁和/或有机卤化镁反应，得到含有一个卤素或一个卤代镁基团的有机锌或有机镁中间体，b）使有机锌或有机镁中间体与Ni （II），Ni（O），Pd（II）或Pd（O）催化剂以引发聚合反应，和c）使有机锌或有机镁中间体聚合，得到区域性的头 - 尾均聚物或3- 取代噻吩，3-取代硒吩，3-取代噻唑或3-取代硒吩，其特征在于聚合反应在从较低温度T1升高至更高温度T2 dur的温度下进行 时间t1，其中T1在-40至5℃的范围内，T2在-20至40℃的范围内，其中T2-T1至少为10℃，平均增加率 （T2-T1）/ t1的范围为0.05℃/分钟至1℃/分钟。

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