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公开(公告)号：JP2014156364A
公开(公告)日：2014-08-28
申请号：JP2013026896
申请日：2013-02-14
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： NAKAMURA SATOSHI , MIYANO MARI , SHIINO OSAMU , YOSHIKAWA MASAHITO
IPC: C01B31/36
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing fine silicon carbide particles which can more easily produce fine silicon carbide particles while increasing a yield of the fine silicon carbide particles.SOLUTION: A method for producing fine silicon carbide particles comprises: a step A of heating a precursor obtained by drying a mixture comprising a silicon source and a carbon source under an inert atmosphere in a region, formed by a non-carbon material, by heating means; a step B of obtaining a mixed powder comprising fine silicon particles, fine silicon oxide particles, and fine silicon carbide particles by cooling a produced gas produced by heating the precursor; a step C of etching the mixed powder by immersing it in an etching solution containing hydrofluoric acid and an oxidizing agent; and a step D of performing centrifugal separation treatment of a produced solution obtained by immersing the mixed powder in the etching solution to extract the fine silicon carbide particles contained in the produced solution.
Abstract translation: 要解决的问题：提供一种生产精细的碳化硅颗粒的方法，其可以更容易地生产精细的碳化硅颗粒，同时提高细小的碳化硅颗粒的产率。解决方案：一种生产精细碳化硅颗粒的方法包括：步骤A 在惰性气氛下通过加热装置在非碳材料形成的区域中干燥包含硅源和碳源的混合物而获得的前体; 通过冷却通过加热前体产生的产生气体获得包含细硅颗粒，二氧化硅微粒和细碳化硅颗粒的混合粉末的步骤B; 将混合粉末浸渍在含有氢氟酸和氧化剂的蚀刻溶液中的步骤C; 以及通过将混合粉末浸渍在蚀刻溶液中而获得的生产溶液进行离心分离处理以提取所制备的溶液中所含的细小碳化硅颗粒的步骤D.
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公开(公告)号：JP2013241290A
公开(公告)日：2013-12-05
申请号：JP2012114164
申请日：2012-05-18
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： MIYANO MARI , NAKAMURA SATOSHI , SHIINO OSAMU , YOSHIKAWA MASAHITO
IPC: C01B33/02 , C07D233/58
Abstract: PROBLEM TO BE SOLVED: To provide a method and solution for storing silicon particles, capable of stabilizing luminescence properties of the silicon particles for a long period and capable of being easily performed.SOLUTION: A method of storing silicon particles includes: a step A of producing a mixed liquid by mixing the silicon particles with a deoxidized ionic liquid; a step B of producing a deoxidized storing liquid by evacuating the mixed liquid; and a step C of enclosing the storing liquid in a reservoir.
Abstract translation: 要解决的问题：提供一种能够长时间稳定硅颗粒的发光性能并能够容易地进行的硅颗粒的储存方法和解决方案。解决方案：一种存储硅颗粒的方法包括：步骤A的步骤A 通过将硅颗粒与脱氧离子液体混合来生产混合液体; 通过抽真空混合液来制造脱氧储存液的工序B; 以及将储存液体包封在储存器中的步骤C.
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3.发明专利
公开(公告)号：JP2013171628A
公开(公告)日：2013-09-02
申请号：JP2012033083
申请日：2012-02-17
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： YAMAMOTO YUKIKO , YOSHIKAWA MASAHITO , SHIINO OSAMU , ENDO SHINOBU , ONO SHINGO , IWABUCHI YOSHINORI
CPC classification number: Y02E60/12
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus of the negative electrode material for a nonaqueous electrolyte secondary battery in which the discharge rate characteristics are enhanced by enhancing the conductivity while simplifying the manufacturing process.SOLUTION: The manufacturing method of the negative electrode material for a nonaqueous electrolyte secondary battery includes step A for heating a precursor, obtained by drying a mixture containing a silicon source and a carbon source, under an inactive atmosphere in a region formed of a non-carbon substance, and step B for acquiring a composite, obtained by quenching a gas produced by heating the precursor under an inactive atmosphere in a region formed of a non-carbon substance, as the negative electrode material for a nonaqueous electrolyte secondary battery. At least one of the silicon source and the carbon source is a liquid.
Abstract translation: 要解决的问题：提供一种非水电解质二次电池用负极材料的制造方法和制造装置，其中通过在简化制造工艺的同时提高导电性来提高放电率特性。解决方案： 用于非水电解质二次电池的负极材料包括步骤A，用于在由非碳物质形成的区域中的非活性气氛下干燥含有硅源和碳源的混合物获得的前体，步骤B用于 获得通过在由非碳物质形成的区域中的惰性气氛下加热前体而产生的气体，作为非水电解质二次电池的负极材料而获得的复合体。 硅源和碳源中的至少一个是液体。
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公开(公告)号：JP2013119489A
公开(公告)日：2013-06-17
申请号：JP2011267163
申请日：2011-12-06
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： MIYANO MARI , SHIINO OSAMU , YOSHIKAWA MASAHITO , ENDO SHIGEKI
IPC: C01B33/02
Abstract: PROBLEM TO BE SOLVED: To easily manufacture silicon fine particles with a desired particle diameter.SOLUTION: The method for manufacturing silicon fine particles includes: a step A for acquiring silicon fine particles by dissolving silicon oxide contained in mixed powder with an etching solution not including an oxidant; a step B for forming an oxide film on the surface of each silicon fine particle; and a step C for dissolving the oxide film with the etching solution.
Abstract translation: 要解决的问题：容易地制造具有所需粒径的硅微粒。 解决方案：硅微粒的制造方法包括：步骤A，用于通过用不含氧化剂的蚀刻溶液溶解混合粉末中的二氧化硅来获取硅微粒; 在每个硅微粒的表面上形成氧化膜的步骤B; 以及用蚀刻液溶解氧化膜的工序C. 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2010262795A
公开(公告)日：2010-11-18
申请号：JP2009111663
申请日：2009-04-30
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： YOSHIKAWA MASAHITO , MIYANO MARI , ONO SHINGO
IPC: H01M14/00 , C01B33/023 , H01L31/04
CPC classification number: Y02E10/542
Abstract: PROBLEM TO BE SOLVED: To provide a new semiconductor electrode for utilizing as an electrode used for a solar cell, a solar cell using the semiconductor electrode, and a method for manufacturing the semiconductor electrode.
SOLUTION: The solar cell 1 includes a semiconductor electrode 10, a counter electrode 20, an electrolyte 30, and a sealing material 40. The semiconductor electrode 10 includes an incident surface 11a which has a light transmission performance and from which light enters. The counter electrode 20 is arranged opposed to the semiconductor electrode 10. The electrolyte 30 is arranged in a space between the semiconductor electrode 10 and the counter electrode 20. The sealing material 40 seals the electrolyte 30 arranged in the space. The semiconductor electrode 10 includes a transparent electrode 12. The transparent electrode 12 is arranged on the opposite surface to the incident surface 11a in a substrate 11 having the incident surface 11a and having light transmission performance. The transparent electrode 12 includes a metal oxide layer 13 arranged on the opposite side of the surface to which the substrate 11 is jointed. The metal oxide layer 13 contains particulates 14 of the metal oxide and silicon particulates 15.
COPYRIGHT: (C)2011,JPO&INPIT-
Patent Agency Ranking
公开(公告)号：JP2010262794A
公开(公告)日：2010-11-18
申请号：JP2009111662
申请日：2009-04-30
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： YOSHIKAWA MASAHITO , MIYANO MARI , ONO SHINGO
CPC classification number: Y02E10/542
Abstract: PROBLEM TO BE SOLVED: To provide a new semiconductor electrode for utilizing as an electrode used for a solar cell, a solar cell using the semiconductor electrode, and a method for manufacturing the semiconductor electrode.
SOLUTION: The solar cell 1 includes a semiconductor electrode 10, a counter electrode 20, an electrolyte 30, and a sealing material 40. The semiconductor electrode 10 includes an incident surface 11a which has a light transmission performance and from which light enters. The counter electrode 20 is arranged opposed to the semiconductor electrode 10. The electrolyte 30 is arranged in a space between the semiconductor electrode 10 and the counter electrode 20. The sealing material 40 seals the electrolyte 30 arranged in the space. The semiconductor electrode 10 includes a transparent electrode 12. The transparent electrode 12 is arranged on the opposite surface to the incident surface 11a in a substrate 11 having the incident surface 11a and having light transmission performance. The transparent electrode 12 includes a metal oxide layer 13 arranged on the opposite side of the surface to which the substrate 11 is jointed. The metal oxide layer 13 contains particulates 14 of the metal oxide and silicon particulates 15.
COPYRIGHT: (C)2011,JPO&INPIT-
公开(公告)号：JP2009037056A
公开(公告)日：2009-02-19
申请号：JP2007201999
申请日：2007-08-02
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： SUGIE KAORU , IWABUCHI YOSHINORI , YOSHIKAWA MASAHITO , ANZAI HIROYUKI , SEKI WATARU , SAKAI YOSHIKATSU
Abstract: PROBLEM TO BE SOLVED: To provide an information display panel capable of making the thickness of an insulation oxide film preferably as thick as 5 μm or more, effectively suppressing image force acting on a particle, thereby reducing a driving voltage of the particle.
SOLUTION: The information display panel displays information or the like by enclosing display medium between two sheets of substrates 1, 2 of which at least one side is transparent, applying a voltage between electrodes 5, 6 disposed on the substrates, providing an electric field to the display medium 3 and, thereby, moving the display medium, wherein the insulation oxide films 11, 12 comprising silicon oxide or zirconium oxide film formed by sputtering are formed on the surface of an electrode made of metal oxide of the electrodes.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：为了提供能够使绝缘氧化物膜的厚度优选为5μm以上的信息显示面板，能够有效地抑制作用在粒子上的图像力，从而降低粒子的驱动电压 。 解决方案：信息显示面板通过将显示介质封闭在两片基板1,2之间来显示信息等，其中至少一侧是透明的，在布置在基板上的电极5,6之间施加电压，从而提供 并且由此移动显示介质，其中通过溅射形成的包括氧化硅或氧化锆膜的绝缘氧化物膜11,12形成在由电极的金属氧化物制成的电极的表面上。 版权所有（C）2009，JPO＆INPIT
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8.发明专利Photocatalytic nitrogen-doped titanium oxide thin film and its depositing method 审中-公开光催化氮化钛氧化物薄膜及其沉积方法
公开(公告)号：JP2008229419A
公开(公告)日：2008-10-02
申请号：JP2007068895
申请日：2007-03-16
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： IWABUCHI YOSHINORI , YOSHIKAWA MASAHITO
CPC classification number: Y02C20/10
Abstract: PROBLEM TO BE SOLVED: To deposit a photocatalytic nitrogen-doped titanium oxide thin film by a low-temperature process at high speed and at a low cost. SOLUTION: Metal Ti targets 15 are set on a backing plate 14. The gas in an apparatus is discharged and then argon gas is introduced into the apparatus through an introduction port 11 and a reactive gas is also introduced through another introduction port 18. A power source 12 is turned ON. Ti atoms are sputtered from the targets 15 by the plasma generated between the targets 15 and the burst sputtered particles are transferred to a substrate 16 by a forced current of the argon gas and accumulated on the surface of the substrate 16 while reacting with the reactive gas. Since the pressure when the thin film is deposited is made high and the forced current of an inert carrier gas is produced from the side of the target surface to the side of the substrate in gas flow sputtering, the target surface is prevented from being oxidized by oxygen gas and Ti atoms are sputtered from the target surface kept in a metal state. Therefore, the thin film can be deposited at a high speed. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：通过低温和低成本的低温工艺沉积光催化氮掺杂的氧化钛薄膜。 解决方案：金属Ti靶15设置在背板14上。装置中的气体被排出，然后氩气通过引入口11引入装置，并且反应性气体也通过另一引入口18引入 电源12接通。 通过在目标15之间产生的等离子体从靶15溅射Ti原子，通过氩气的强制电流将脉冲串溅射的颗粒转移到基板16，并积聚在基板16的表面上，同时与反应气体 。 由于沉积薄膜时的压力高，并且在气流溅射中从目标表面到基板侧产生惰性载气的强制电流，所以防止了目标表面被 从保持金属状态的目标表面溅射氧气和Ti原子。 因此，可以高速地沉积薄膜。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008102273A
公开(公告)日：2008-05-01
申请号：JP2006283884
申请日：2006-10-18
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： YOSHIKAWA MASAHITO , IWABUCHI YOSHINORI
Abstract: PROBLEM TO BE SOLVED: To inexpensively manufacture an electrochromic element by a high speed film-deposition technique using inexpensive equipment.
SOLUTION: In the electrochromic element wherein a transparent conductive film, an oxidation coloring layer, an electrolyte layer, a reduction coloring layer and a transparent conductive layer are layered on a substrate, any one or two or more layers of the oxidation coloring layer, the electrolyte layer and the reduction coloring layer are film-deposited by a gas flow sputtering method in an atmosphere containing hydrogen. The gas flow sputtering method can be performed with inexpensive equipment since high vacuum evacuation is not needed and enables high speed film-deposition. Thereby, the electrochromic element can be inexpensively manufactured by reduction of an equipment cost by adopting the gas flow sputtering method and reduction of film-deposition time. Protons caused by hydrogen are introduced into any of the three layers and thus responsiveness of an electrochromic phenomenon is enhanced.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：通过使用廉价设备的高速膜沉积技术廉价地制造电致变色元件。 解决方案：在透明导电膜，氧化着色层，电解质层，还原着色层和透明导电层层叠在基板上的电致变色元件中，氧化着色剂的一层或两层以上 层，电解质层和还原着色层通过气流溅射法在含氢的气氛中进行膜沉积。 气体流动溅射方法可以用廉价的设备进行，因为不需要高真空排气并且能够进行高速的膜沉积。 由此，通过采用气流溅射法降低设备成本并降低膜沉积时间，可以廉价地制造电致变色元件。 由氢引起的质子被引入到三层中的任一层中，从而增强了电致变色现象的响应性。 版权所有（C）2008，JPO＆INPIT
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10.发明专利
公开(公告)号：JP2008097969A
公开(公告)日：2008-04-24
申请号：JP2006277765
申请日：2006-10-11
Applicant: Bridgestone Corp , 株式会社ブリヂストン
Inventor： SHIGESATO YUZO , TAKEDA HIROSHI , IWABUCHI YOSHINORI , YOSHIKAWA MASAHITO
Abstract: PROBLEM TO BE SOLVED: To provide a ZnO based transparent conductive film of a small specific resistance inexpensively by a film-forming technology capable of high-speed film forming.
SOLUTION: The ZnO based transparent conductive film is formed by a gas flow sputtering method with the use of a Zn alloy target. In the gas flow sputtering device, argon or the like is introduced from a sputtering gas guide-in port 11, a target 15 is sputtered by plasma generated in discharge between an anode 13 and the target 15, and sputter particles flicked off are transported by coercive flow of argon or the like to a base board 16 to be deposited. Since coercive flow flows on the surface of the target, oxygen gas from a reactive gas guide-in port 18 is prevented from diffusing up to the surface of the target. Film forming is carried out under high pressure, so that damage on a thin film due to high-energy particles is extremely lowered to make specific resistance small.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 解决的问题：通过能够进行高速成膜的成膜技术，廉价地提供电阻率小的ZnO系透明导电膜。 解决方案：ZnO基透明导电膜通过使用Zn合金靶的气流溅射法形成。 在气流溅射装置中，从溅射气体导入口11引入氩等，通过在阳极13和靶15之间的放电中产生的等离子体溅射靶15，溅射溅射的微粒被运送 将氩等的矫顽力流向要沉积的基板16。 由于矫顽力流在目标表面上，所以防止来自反应气体导入口18的氧气扩散到靶的表面。 在高压下进行成膜，使得由于高能粒子而导致的薄膜损伤极度降低，使电阻小。 版权所有（C）2008，JPO＆INPIT
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