公开(公告)号：JP2004099873A

公开(公告)日：2004-04-02

申请号：JP2003184081

申请日：2003-06-27

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： SEZI RECAI ,  WALTER ANDREAS ,  MALTENBERGER ANNA ,  LOWACK KLAUS ,  HALIK MARCUS

IPC: C08G73/02 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30

CPC classification number: C08G69/265 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  Y10T428/31504 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: PROBLEM TO BE SOLVED: To provide a novel polymer easily spreadable on an electronic part with a very favorable electron insulating effect after cyclization, sufficient stability to chemicals and elevated temperatures, good adhesiveness and filling properties. SOLUTION: The present invention relates to an dielectric material for aluminum and copper metallizing being stable at elevated temperature. Polybenzoxazole is prepared by reacting bis-o-aminophenol with a dicarboxylic acid or its activated derivative (acid chloride) to give poly-o-hydroxamide followed by heating for dehydration and cyclization. The dielectric material of this polymer composition is very suitable for filling a narrow trench, surprisingly even though it is dehydrated during cyclization, and the filled trench shows no defect, bubble or crack. The polybenzoxazole has a low dielectric constant (≤2.7) and suitable for an electric insulator and further exhibits favorable adhesiveness to all the surfaces participating in microelectron optics. COPYRIGHT: (C)2004,JPO

公开(公告)号：WO2005109538A3

公开(公告)日：2006-09-08

申请号：PCT/DE2005000847

申请日：2005-05-04

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  EFFENBERGER FRANZ

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  EFFENBERGER FRANZ

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L51/052 ,  H01L51/0012 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

Abstract: The invention relates to an organic field-effect transistor, comprising a substrate, a source-, drain- and gate-electrode and an organic semiconductor material, whereby, a dielectric layer (gate dielectric) is arranged between the gate-electrode and the semiconductor material, made from a self-organising monolayer of an organic compound, comprising an anchor group, a linker group, a head group and an aliphatic orientating group. The anchor group, the linker group, the head group and the aliphatic orienting group are bonded to each other in the order given above.

Abstract translation: 本申请的主题是在栅电极和有机半导体材料之间布置的电介质层（栅极电介质）的有机场效应晶体管，包括一基板，一源极，漏极和栅极电极和有机半导体材料， 由具有锚定基团，连接基团，头部基团，和脂族取向基团，其中，所述锚定基团，连接基团，头部基团，并且以上述顺序连接的脂肪族取向基团的有机化合物的自组装单层而获得 是。

公开(公告)号：WO2006058858A3

公开(公告)日：2006-09-21

申请号：PCT/EP2005056176

申请日：2005-11-23

Applicant: INFINEON TECHNOLOGIES AG ,  EFFENBERGER FRANZ ,  MAISCH STEFFEN ,  SEIFRITZ STEFFEN ,  SCHMID GUENTER ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE

Inventor： EFFENBERGER FRANZ ,  MAISCH STEFFEN ,  SEIFRITZ STEFFEN ,  SCHMID GUENTER ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE

IPC: H01L51/05 ,  B32B15/08 ,  C07C319/12 ,  C07C321/02 ,  C07F9/38 ,  C07F9/40 ,  H03K3/03

CPC classification number: C07F9/3808 ,  B82Y30/00 ,  C07C319/02 ,  C07C327/28 ,  C07F9/4006 ,  H01L51/0516 ,  H01L51/0545 ,  H03K3/00 ,  H03K17/00 ,  C07C323/12

Abstract: The invention relates to a method for synthesizing organic compounds that are capable of forming a self-organizing monolayer. Said compounds are obtained by reacting an olefin with a thiocarbonic acid and subsequent hydration to give the thiol, or by reacting it with a phosphite and subsequent hydrolysis to give the phosphonic acid.

Abstract translation: 一种用于能够形成自组装单层，并通过与一个Thiocarbonsäuresäure一个烯烃反应和关闭氢化成硫醇，或与亚磷酸酯和膦酸的随后的水解获得的有机化合物的合成过程。

公开(公告)号：WO2004013122A3

公开(公告)日：2009-11-05

申请号：PCT/EP0308157

申请日：2003-07-24

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER

IPC: C07D333/18 ,  C07D409/14 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L51/0068 ,  C07D333/18 ,  C07D409/14 ,  H01L51/0067 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545

Abstract: The invention relates to novel octupolar compounds and the production and use thereof as organic semi-condutors, particularly for organic field effect transistors.

Abstract translation: 本发明涉及新颖的化合物和它们的制备和使用八极作为有机半导体，尤其是对有机场效应晶体管。

公开(公告)号：WO2005001923A3

公开(公告)日：2005-05-26

申请号：PCT/DE2004001245

申请日：2004-06-14

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  SCHMID GUENTER ,  KLAUK HAGEN ,  EDER FLORIAN ,  ZSCHIESCHANG UTE

Inventor： HALIK MARCUS ,  SCHMID GUENTER ,  KLAUK HAGEN ,  EDER FLORIAN ,  ZSCHIESCHANG UTE

IPC: D21H19/24 ,  D21H19/72 ,  H01L51/05 ,  H01L51/40 ,  D21H17/34

CPC classification number: D21H19/24 ,  D21H19/72 ,  H01L51/0002 ,  H01L51/0545 ,  Y10T428/31993

Abstract: The invention relates to a solution for treating a rough surface, especially a paper, which is used as a supporting material for a semiconductor component. Said solution is characterized by at least one phenol-containing basic polymer and/or copolymer. The invention also relates to a method for treating said surface with a solution, and a semiconductor component that is provided with a substrate which has been treated with a solution according to the inventive method. The invention makes it possible to arrange semiconductor components on rough surfaces.

Abstract translation: 溶液和用于治疗粗糙表面和半导体器件的方法。 本发明涉及用于治疗的粗糙表面的，尤其是纸的溶液中，作为用于半导体器件的衬底，其特征在于至少含有苯酚的基础聚合物和/或共聚物。 本发明还涉及用溶液处理所述表面的方法，和具有根据所述方法用溶液处理过的衬底的半导体器件。 这使得有可能安排在粗糙表面上的半导体元件。

公开(公告)号：WO2004004025A3

公开(公告)日：2004-05-06

申请号：PCT/DE0301888

申请日：2003-06-06

Applicant: INFINEON TECHNOLOGIES AG ,  ZSCHIESCHANG UTE ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  KRIEM TARIK

Inventor： ZSCHIESCHANG UTE ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  KRIEM TARIK

IPC: G03F7/00 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H05K3/12 ,  H01L51/20

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L51/0004 ,  H01L51/0013 ,  H01L51/0016 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0516 ,  H01L51/0545 ,  H05K3/1208 ,  H05K2201/0329 ,  H05K2203/1173

Abstract: The invention relates to a method for the production of semiconductor paths from an electrically-conducting organic material. Sections are defined on a substrate surface by printing of a matrix compound such that a substrate surface with hydrophilic and hydrophobic sections is obtained. A solution of the electrically-conducting organic polymer is applied to the structured substrate surface, whereby either only the hydrophilic sections or only the hydrophobic sections are coated with the solution of the organic polymer. The method permits the representation of lines with a linewidth of less then 10 µm and does not require any photolithographic process steps.

Abstract translation: 本发明涉及一种用于生产导电有机材料的印刷电路轨迹的处理。 为了这个目的，部分被在基板表面上通过印刷模板化合物，从而得到具有在亲水和疏水部分的基板表面限定。 导电有机聚合物的溶液被添加到结构化基底表面，其中任一所述亲水性部分或只有疏水部分是由有机聚合物的溶液润湿。 该方法使得具有小于10微米的线宽度线的显示，并且不需要光刻工艺步骤。

公开(公告)号：WO02079297A2

公开(公告)日：2002-10-10

申请号：PCT/EP0203577

申请日：2002-03-28

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  LOWACK KLAUS ,  SEZI RECAI ,  WALTER ANDREAS

Inventor： HALIK MARCUS ,  LOWACK KLAUS ,  SEZI RECAI ,  WALTER ANDREAS

IPC: C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30

CPC classification number: H01B3/305 ,  C08G69/26 ,  C08G69/265 ,  C08G69/32 ,  C08G73/22

Abstract: The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, are suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.

Abstract translation: 本发明涉及新的聚羟基酰胺化合物，其在其恶唑作为涂层材料的形式，特别是用于电子元件是合适的，它们的制备和它们的用途的方法。

公开(公告)号：WO2005096348A3

公开(公告)日：2005-12-08

申请号：PCT/DE2005000559

申请日：2005-03-30

Applicant: INFINEON TECHNOLOGIES AG ,  KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

IPC: G01L9/00 ,  G06F3/033 ,  G06K9/00 ,  H01L51/30 ,  H01L51/20

CPC classification number: G06K9/00053

Abstract: The invention relates to a force sensor based on an organic field effect transistor (10) that is applied to a substrate (1; 11). According to the invention, a mechanical force that acts on the transistor causes a corresponding modification of the source-drain voltage or the source-drain current (ID), whereby said modification can be respectively detected as a measured variable (Vmess, Imess) for the exerted force. The invention also relates to a membrane-based pressure sensor that uses a force sensor of this type, to a one- or two-dimensional position sensor that uses a plurality of force sensors of this type and to a fingerprint sensor that uses a plurality of force sensors of this type.

Abstract translation: 本发明涉及一种基于一个力传感器的基板上（1; 11）施加的有机场效应晶体管（10），其特征在于，作用在所述晶体管的机械力相应改变其源 - 漏电压或它的源极 - 漏极这些力中的一个的力 电流（ID）给出，其中各测量变量（VMEAS，Imess）是可检测的对所施加的力，一个这样的力传感器中使用基于膜的压力传感器，多个这样的力传感器的使用的一个或二维位置传感器和多个使用指纹传感器这样的力传感器。

公开(公告)号：WO2005022658A3

公开(公告)日：2005-11-03

申请号：PCT/DE2004001936

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

IPC: G11C13/02 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L51/20

CPC classification number: H01L51/0591 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/28 ,  H01L51/0012 ,  H01L51/0094 ,  H01L51/0595

Abstract: The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for using in CMOS structures, said compound being characterised by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

Abstract translation: 本发明涉及具有有机记忆材料的至少一个存储器单元，用于在CMOS结构的化合物，特别是，其特征在于：a）至少一个第一锚定基团（1）具有用于共价连接到第一电极（10反应性基团），特别是底部 一个存储单元（102），和b）至少一个第二锚定基团（2）具有用于结合第二电极（20），在存储单元（102）的特定的顶部电极的反应性基团的电极。 本发明还涉及一种半导体器件和用于制造半导体器件的方法。 因此，有一种半导体器件和连接的半导体装置，与它有效地能够实现对传统基材分子存储器层的制造方法。

公开(公告)号：WO2005023940A2

公开(公告)日：2005-03-17

申请号：PCT/DE2004001903

申请日：2004-08-24

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

IPC: G03F1/90 ,  H01B3/18 ,  H01B3/44 ,  H01L51/05 ,  C09D

CPC classification number: H01B3/442 ,  H01L51/052

Abstract: The invention relates to an integrated circuit comprising an organic semiconductor, especially an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one dibenzyl or tribenzyl alcohol compound as an electrophilic crosslinking component, c) 0.2 to 10 parts of at least one photo acid generator dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, particularly for OFETs, at low temperatures.

Abstract translation: 本发明涉及一种包含有机半导体，特别是有机场效应晶体管（OFT），其具有通过由以下组成的一个聚合物配方制造的介电层）100份，或至少一种可交联基体聚合物，一种集成电路B）10至20份的至少一种二 - 。三苄基如亲电交联剂，c）0.2〜10份溶解于d。至少一种光酸产生剂）的至少一种溶剂。 本发明还涉及一种用于制造集成电路的方法。 这使得可以制造具有电介质层的集成电路，特别是用于低温下的OFET。