公开(公告)号：WO2005109538A3

公开(公告)日：2006-09-08

申请号：PCT/DE2005000847

申请日：2005-05-04

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  EFFENBERGER FRANZ

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  EFFENBERGER FRANZ

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L51/052 ,  H01L51/0012 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

Abstract: The invention relates to an organic field-effect transistor, comprising a substrate, a source-, drain- and gate-electrode and an organic semiconductor material, whereby, a dielectric layer (gate dielectric) is arranged between the gate-electrode and the semiconductor material, made from a self-organising monolayer of an organic compound, comprising an anchor group, a linker group, a head group and an aliphatic orientating group. The anchor group, the linker group, the head group and the aliphatic orienting group are bonded to each other in the order given above.

Abstract translation: 本申请的主题是在栅电极和有机半导体材料之间布置的电介质层（栅极电介质）的有机场效应晶体管，包括一基板，一源极，漏极和栅极电极和有机半导体材料， 由具有锚定基团，连接基团，头部基团，和脂族取向基团，其中，所述锚定基团，连接基团，头部基团，并且以上述顺序连接的脂肪族取向基团的有机化合物的自组装单层而获得 是。

公开(公告)号：WO2005006555A3

公开(公告)日：2005-08-18

申请号：PCT/EP2004007317

申请日：2004-07-05

Applicant: INFINEON TECHNOLOGIES AG ,  SCHMID GUENTER ,  SPIRKL WOLFGANG

Inventor： SCHMID GUENTER ,  SPIRKL WOLFGANG

IPC: H03K19/096 ,  H01L51/00

CPC classification number: H03K19/096 ,  Y10S977/783 ,  Y10S977/791

Abstract: The invention relates to an integrated circuit which is produced, essentially, from non monocrystalline semi-conductors and which comprises a plurality of transistors which are all of the same type, and at least two time emitter-signal-inputs. The time emitter signals supplied to the various inputs are temporally, non-overlapping signals.

Abstract translation: 本发明涉及在多相逻辑一个integriertern电路，它是由非单晶半导体基本上，包括：多个晶体管，其中所有的晶体管是相同类型的; 至少两个计时器信号输入，其特征在于，提供给不同的输入的定时信号的电流在时间上不重叠的信号。

公开(公告)号：WO0138603A3

公开(公告)日：2002-01-10

申请号：PCT/DE0003133

申请日：2000-09-07

Applicant: INFINEON TECHNOLOGIES AG ,  SEZI RECAI ,  SCHMID GUENTER ,  LOWACK KLAUS ,  RADLIK WOLFGANG ,  HAUSSMANN JOERG

Inventor： SEZI RECAI ,  SCHMID GUENTER ,  LOWACK KLAUS ,  RADLIK WOLFGANG ,  HAUSSMANN JOERG

IPC: C23C18/20 ,  C23C18/16 ,  C23C18/30 ,  H01L21/288 ,  H05K3/18

CPC classification number: H05K3/185 ,  C23C18/1605 ,  H05K2203/0525

Abstract: The invention relates to a method for metallizing dielectrics during which a photosensitive dielectric is applied to a substrate. The dielectric is then exposed to light though a mask, is seeded with a metal and subjected to a temperature treatment and, afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be firstly seeded with a metal after being applied to the substrate, and then exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

Abstract translation: 在用于光敏介电被施加到基底电介质的金属化的方法，则该电介质通过掩模曝光，接种有金属和经受高温处理，然后将电介质是化学金属化。 可替换地，电介质 - 施加到基片后 - 首先用金属接种并随后通过掩模暴露; 然后过量播种除去和化学金属化的电介质。

公开(公告)号：WO2005096348A3

公开(公告)日：2005-12-08

申请号：PCT/DE2005000559

申请日：2005-03-30

Applicant: INFINEON TECHNOLOGIES AG ,  KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER ,  DARLINSKI GRZEGORZ ,  WASER RAINER ,  BREDERLOW RALF

IPC: G01L9/00 ,  G06F3/033 ,  G06K9/00 ,  H01L51/30 ,  H01L51/20

CPC classification number: G06K9/00053

Abstract: The invention relates to a force sensor based on an organic field effect transistor (10) that is applied to a substrate (1; 11). According to the invention, a mechanical force that acts on the transistor causes a corresponding modification of the source-drain voltage or the source-drain current (ID), whereby said modification can be respectively detected as a measured variable (Vmess, Imess) for the exerted force. The invention also relates to a membrane-based pressure sensor that uses a force sensor of this type, to a one- or two-dimensional position sensor that uses a plurality of force sensors of this type and to a fingerprint sensor that uses a plurality of force sensors of this type.

Abstract translation: 本发明涉及一种基于一个力传感器的基板上（1; 11）施加的有机场效应晶体管（10），其特征在于，作用在所述晶体管的机械力相应改变其源 - 漏电压或它的源极 - 漏极这些力中的一个的力 电流（ID）给出，其中各测量变量（VMEAS，Imess）是可检测的对所施加的力，一个这样的力传感器中使用基于膜的压力传感器，多个这样的力传感器的使用的一个或二维位置传感器和多个使用指纹传感器这样的力传感器。

公开(公告)号：WO2005022658A3

公开(公告)日：2005-11-03

申请号：PCT/DE2004001936

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE

IPC: G11C13/02 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L51/20

CPC classification number: H01L51/0591 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/28 ,  H01L51/0012 ,  H01L51/0094 ,  H01L51/0595

Abstract: The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for using in CMOS structures, said compound being characterised by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

Abstract translation: 本发明涉及具有有机记忆材料的至少一个存储器单元，用于在CMOS结构的化合物，特别是，其特征在于：a）至少一个第一锚定基团（1）具有用于共价连接到第一电极（10反应性基团），特别是底部 一个存储单元（102），和b）至少一个第二锚定基团（2）具有用于结合第二电极（20），在存储单元（102）的特定的顶部电极的反应性基团的电极。 本发明还涉及一种半导体器件和用于制造半导体器件的方法。 因此，有一种半导体器件和连接的半导体装置，与它有效地能够实现对传统基材分子存储器层的制造方法。

公开(公告)号：WO2005023940A2

公开(公告)日：2005-03-17

申请号：PCT/DE2004001903

申请日：2004-08-24

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

IPC: G03F1/90 ,  H01B3/18 ,  H01B3/44 ,  H01L51/05 ,  C09D

CPC classification number: H01B3/442 ,  H01L51/052

Abstract: The invention relates to an integrated circuit comprising an organic semiconductor, especially an organic field effect transistor (OEFT) that is provided with a dielectric layer. Said integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one dibenzyl or tribenzyl alcohol compound as an electrophilic crosslinking component, c) 0.2 to 10 parts of at least one photo acid generator dissolved in d) at least one solvent. The invention further relates to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, particularly for OFETs, at low temperatures.

Abstract translation: 本发明涉及一种包含有机半导体，特别是有机场效应晶体管（OFT），其具有通过由以下组成的一个聚合物配方制造的介电层）100份，或至少一种可交联基体聚合物，一种集成电路B）10至20份的至少一种二 - 。三苄基如亲电交联剂，c）0.2〜10份溶解于d。至少一种光酸产生剂）的至少一种溶剂。 本发明还涉及一种用于制造集成电路的方法。 这使得可以制造具有电介质层的集成电路，特别是用于低温下的OFET。

公开(公告)号：WO2004032147B1

公开(公告)日：2004-07-22

申请号：PCT/DE0302993

申请日：2003-09-09

Applicant: INFINEON TECHNOLOGIES AG ,  SCHMID GUENTER ,  KLAUK HAGEN ,  HALIK MARCUS ,  WALTER ANDREAS

Inventor： SCHMID GUENTER ,  KLAUK HAGEN ,  HALIK MARCUS ,  WALTER ANDREAS

IPC: G11C13/02 ,  H01L45/00

CPC classification number: G11C13/0016 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/2409 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

Abstract: The invention relates to a resistive storage element containing a dielectric as the storage medium, in which isolated nanoparticles are arranged. The dielectric is preferably configured from an organic polymer. The storage element exhibits a resistive hysteresis effect. Below a voltage Vhold, the storage element is switched to a slightly conductive state, whereas above a voltage Vkrit, the storage element changes over into a conductive state. The conductive state of the storage element can be read out by applying a voltage that lies between Vhold and Vkrit.<>

Abstract translation: 纳米颗粒作为载体下沉电阻SpeicherelementenDie发明涉及一种电阻式存储器元件。 所述存储器元件包括电介质为其中分离纳米颗粒被设置的存储介质。 电介质优选由有机聚合物形成。 存储元件是电阻滞后。 以下的电压VHOLD，而它通过上述导通状态的电压Vkrit存储元件被切换到低导通状态。 通过施加电压，其位于VHOLD和Vkrit之间，存储元件的导通状态可以被读出。

公开(公告)号：WO2004017440A2

公开(公告)日：2004-02-26

申请号：PCT/DE0302379

申请日：2003-07-15

Applicant: INFINEON TECHNOLOGIES AG ,  KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE ,  HALIK MARCUS ,  TERZOGLU EFSTRATIOS

Inventor： KLAUK HAGEN ,  SCHMID GUENTER ,  ZSCHIESCHANG UTE ,  HALIK MARCUS ,  TERZOGLU EFSTRATIOS

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L51/20

CPC classification number: H01L51/105 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/0097 ,  H01L51/0545

Abstract: The invention relates to a semiconductor device comprising a semiconductor section consisting of an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section. A phosphine layer is located between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The phosphine acts as a charge transfer molecule, which facilitates the transfer of charge carriers between the contact and the organic semiconductor material. This enables the contact resistance between the contact and the organic material to be significantly reduced.

Abstract translation: 本发明涉及具有半导体路径的半导体器件，包括有机半导体材料，用于注入电荷载流子到半导体路径以及用于从半导体路径提取电荷载体，第二接触的第一接触，其中，所述第一接触和所述半导体路径之间和/或第二触点与之间 半导体路径安排了一层磷化氢。 膦起着电荷转移分子的作用，其有利于在接触和有机半导体材料之间转移电荷载流子。 结果，接触和有机半导体材料之间的接触电阻可以显着降低。

公开(公告)号：WO2006058858A3

公开(公告)日：2006-09-21

申请号：PCT/EP2005056176

申请日：2005-11-23

Applicant: INFINEON TECHNOLOGIES AG ,  EFFENBERGER FRANZ ,  MAISCH STEFFEN ,  SEIFRITZ STEFFEN ,  SCHMID GUENTER ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE

Inventor： EFFENBERGER FRANZ ,  MAISCH STEFFEN ,  SEIFRITZ STEFFEN ,  SCHMID GUENTER ,  HALIK MARCUS ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE

IPC: H01L51/05 ,  B32B15/08 ,  C07C319/12 ,  C07C321/02 ,  C07F9/38 ,  C07F9/40 ,  H03K3/03

CPC classification number: C07F9/3808 ,  B82Y30/00 ,  C07C319/02 ,  C07C327/28 ,  C07F9/4006 ,  H01L51/0516 ,  H01L51/0545 ,  H03K3/00 ,  H03K17/00 ,  C07C323/12

Abstract: The invention relates to a method for synthesizing organic compounds that are capable of forming a self-organizing monolayer. Said compounds are obtained by reacting an olefin with a thiocarbonic acid and subsequent hydration to give the thiol, or by reacting it with a phosphite and subsequent hydrolysis to give the phosphonic acid.

Abstract translation: 一种用于能够形成自组装单层，并通过与一个Thiocarbonsäuresäure一个烯烃反应和关闭氢化成硫醇，或与亚磷酸酯和膦酸的随后的水解获得的有机化合物的合成过程。

公开(公告)号：WO2006021483A3

公开(公告)日：2006-10-05

申请号：PCT/EP2005053779

申请日：2005-08-03

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  DEHM CHRISTINE ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER

Inventor： HALIK MARCUS ,  DEHM CHRISTINE ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER

IPC: H01L51/10 ,  H01L27/28

CPC classification number: H01L51/0545 ,  H01L21/312 ,  H01L27/3244

Abstract: The invention relates to a semiconductor circuit arrangement (10) and to a method for the production thereof, in which a protective material region (50) made of poly(para-xylene) is formed for the material separation of a first circuit region (30) and a second circuit region (40).

Abstract translation: 提出了一种半导体电路装置（10）和它们的制备方法，其中的第一电路部分（30）和聚（对 - 二甲苯）的保护材料区（50）的第二电路部分（40）的物理分离形成或为。