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公开(公告)号:JP2002279838A
公开(公告)日:2002-09-27
申请号:JP2001076151
申请日:2001-03-16
Applicant: FURUKAWA ELECTRIC CO LTD , NGK SPARK PLUG CO , CHUBU ELECTRIC POWER , INT SUPERCONDUCTIVITY TECH
Inventor: KIN SHAKUHAN , MAEDA TOSHIHIKO , MATSUMOTO KANAME , YAMAGIWA KATSUYA , SUGA TOSHIHIRO , YAMADA YASUSHI , HIRABAYASHI IZUMI
Abstract: PROBLEM TO BE SOLVED: To provide an oxide superconductor structure in which manufacture of an 123 type superconducting membrane by solution growth method is made possible by forming a seed membrane having excellent crystallization, and its manufacturing method. SOLUTION: The oxide superconducting structure comprises a substrate having a perovskite structure, an oxide layer of crystalline substance made of REGaO3 (RE expresses La, Nd, Pr, Sm, Eu, Gd, Dy, Ho, Er, Yb, or Lu) formed on this substrate, and an oxide superconductor formed on this oxide layer. The crystalline substance oxide layer is obtained by forming an amorphous oxide layer and annealing this at a temperature higher than the forming temperature of the amorphous oxide layer and then, crystallizing it.
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公开(公告)号:JP2002150855A
公开(公告)日:2002-05-24
申请号:JP2000348192
申请日:2000-11-15
Applicant: FURUKAWA ELECTRIC CO LTD , INT SUPERCONDUCTIVITY TECH
Inventor: MATSUMOTO KANAME , HIRABAYASHI IZUMI , IKEDA TAKERU
Abstract: PROBLEM TO BE SOLVED: To provide an oxide superconductor wire material having stable and excellent crystalline property at its whole lengthened part, with an oxide superconductor film showing high critical current density, and to provide a manufacturing method of the same. SOLUTION: For the oxide superconductor wire material comprising a polycrystalline metal base (1) having an aggregation structure oriented to 100} direction, oxide buffer layers (2, 3) formed on the polycrystalline metal base (1), and an oxide superconductor layer (4) formed on the oxide buffer layer (2, 3), the oxide buffer layer (2, 3) is composed of the first oxide buffer layer (2) with a surface coarseness of Rmax=0.15 μm or less which is a surface oxide layer of the polycrystalline metal base (1), and the second oxide buffer layer (3) formed on the first oxide buffer layer (2).
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公开(公告)号:JP2002104900A
公开(公告)日:2002-04-10
申请号:JP2000294251
申请日:2000-09-27
Applicant: CHUBU ELECTRIC POWER , INT SUPERCONDUCTIVITY TECH , TOSHIBA CORP , FURUKAWA ELECTRIC CO LTD
Inventor: YAMADA YASUSHI , MIURA TADAMASA , SUGA TOSHIHIRO , ARAKI TAKESHI , MAEDA TOSHIHIKO , UNOKI HIROMI , HIRABAYASHI IZUMI
Abstract: PROBLEM TO BE SOLVED: To provide an oxide superconductive structure formed by 123 forming type oxide superconductive structure on a substrate by the liquid phase epitaxial method (LPE method) through a seed crystal film which is easy to control (wide control tolerance), when forming crystal film. SOLUTION: On the substrate 14, there is formed an oxide layer (seed film) 12 which is structured with Ln-A-M-O (Ln represents Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, A represents Ba or Sr, M represents Fe, Ni or Mo), and the oxide superconductive film 16 having a crystal structure of Ln1.Ba2.Cu3.O7-a type (Ln represents Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu) is formed using a liquid growing method.
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公开(公告)号:JPH11134950A
公开(公告)日:1999-05-21
申请号:JP30982597
申请日:1997-10-24
Applicant: INT SUPERCONDUCTIVITY TECH , NGK INSULATORS LTD , SHOWA ELECTRIC WIRE & CABLE CO , FURUKAWA ELECTRIC CO LTD
Inventor: ARAI YUSUKE , YAMADA YOUSHI , TAKAHASHI YASUO , MATSUMOTO KANAME , HIRABAYASHI IZUMI
Abstract: PROBLEM TO BE SOLVED: To realize a high critical current density in a magnetic field while reducing the weak connection of a superconductive characteristic by providing a self-flattened oxide superconductive film on a polycrystal substrate having rugged parts due to a grain boundary. SOLUTION: Polycrystal having aligned face orientation can be formed into a long-size and it is manufactured by rolling at a low cost, and since a self-flattened oxide superconductive film is hard to be formed with a grain boundary in the rugged part of the grain boundary of the substrate, an excellent superconductive characteristic is obtained. The self-flattened superconductive film is desirably formed by a solution growing method for growing a film having excellent crystallization at a high speed, and it has Y123 type crystal structure. As a polycrystal substrate, a metal of silver or the like, which does not react with the oxide superconductive material and of which orientation is controlled and of which crystal orientation is aligned such as 100} and 110} , is desirably used. Or an oxide can be used, or a metal plate formed with an oxide film such as magnesium oxide, which does not react with the metal plate and the oxide superconductive material, thereon can be used.
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公开(公告)号:JP2002338392A
公开(公告)日:2002-11-27
申请号:JP2001144541
申请日:2001-05-15
Applicant: CHUBU ELECTRIC POWER , FURUKAWA ELECTRIC CO LTD , TOSHIBA CORP , INT SUPERCONDUCTIVITY TECH , FUJIKURA LTD , SUMITOMO ELECTRIC INDUSTRIES
Inventor: SUGA TOSHIHIRO , YAMADA YASUSHI , MAEDA TOSHIHIKO , KIN SHAKUHAN , KUROSAKI HARUHIKO , YAMADA MINORU , HIRABAYASHI IZUMI , IIJIMA YASUHIRO , WATABE TOMONORI , YOSHINO HISASHI , MURANAKA KOJI
IPC: C30B29/22 , C30B19/04 , H01L21/208
Abstract: PROBLEM TO BE SOLVED: To provide a method of producing an oxide crystal film/substrate composite material, by which the problem, such as the formation of cracks in the oxide crystal film, the exfoliation between the substrate and the oxide crystal film, or the generation of a reaction layer of the substrate with the solution can be almost solved, when the oxide crystal film/substrate composite material is produced by depositing a film of an Y123-type oxide crystal film on a substrate by a solution method (liquid phase method). SOLUTION: In the method for producing the oxide crystal film/substrate composite material by growing the oxide crystal film having a Y123-type crystal structure on the substrate from a solution phase by the liquid phase method, a BaO-CuO-BaF2 system or a BaO-CuO-Ag-BaF2 system is used as a solvent (melt) forming the solution phase, the substrate having a seed crystal film stuck to its surface is brought into contact with the solution, and the oxide crystal film is grown on the substrate while controlling the temperature of the solution to be
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公开(公告)号:JP2002203439A
公开(公告)日:2002-07-19
申请号:JP2001145599
申请日:2001-05-15
Applicant: INT SUPERCONDUCTIVITY TECH , SHOWA ELECTRIC WIRE & CABLE CO , FUJIKURA LTD , RAILWAY TECHNICAL RES INST , TOSHIBA CORP
Inventor: HONJO AKISATO , FUJI HIROSHI , NAKAMURA YUICHI , IZUMI TERUO , ARAKI TAKESHI , YAMADA MINORU , HIRABAYASHI IZUMI , SHIOBARA TORU , IIJIMA YASUHIRO , TAKEDA KAORU
Abstract: PROBLEM TO BE SOLVED: To provide a tape-like oxide superconductor having high c-axis orientation and high in-plane orientation, and high jc value. SOLUTION: A first intermediate layer formed by depositing YSZ or Zr2RXO7 particles generated from a target while ions are made to irradiate a substrate from the inclined direction; a second intermediate layer comprising CeO2 or Y2O3; and an RE1+XBa2-XCu3OY superconducting layer formed by coating a metal organic acid salt containing F and heat-decomposing it are formed in order on a non-magnetic, or weak magnetic, high strength tape-like metal substrate.
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公开(公告)号:JP2002080297A
公开(公告)日:2002-03-19
申请号:JP2000269251
申请日:2000-09-05
Applicant: TOSHIBA CORP , NGK SPARK PLUG CO , INT SUPERCONDUCTIVITY TECH
Inventor: ARAKI TAKESHI , YAMAGIWA KATSUYA , HIRABAYASHI IZUMI
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a high-performance oxide superconductor wherein a metal acetate is utilized as a starting material. SOLUTION: The oxide superconductor is manufactured by a mixing-reaction process wherein a mixed metal trifluoroacetate solution is prepared by mixing the mixed acetate aqueous solution which contains one or more metal elements selected from lanthanoids and yttrium, barium and copper with trifluoroacetic acid and reacting, and a refining process wherein a refined mixed metal trifluoroacetate is prepared from the mixed metal acetate solution by adjusting the total content of water and acetic acid component to
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公开(公告)号:JPH11111080A
公开(公告)日:1999-04-23
申请号:JP28315597
申请日:1997-10-01
Applicant: INT SUPERCONDUCTIVITY TECH , NGK INSULATORS LTD , CHUBU ELECTRIC POWER , HITACHI LTD
Inventor: ARAI YUSUKE , YAMADA YASUSHI , KAWASHIMA JUNICHI , BUN TAKEKUNI , HIRABAYASHI IZUMI , KOSHIZUKA NAOKI , HIGASHIYAMA KAZUHISA , FUJIWARA TETSUO
Abstract: PROBLEM TO BE SOLVED: To improve critical current density in a magnetic field by the introduction of low inclination grain boundaries into a superconducting oxide film by forming a biaxially oriented superconducting oxide film on a metallic silver substrate having a 100} texture. SOLUTION: An oxide intermediate layer biaxially oriented in a substrate plane, a parallel plane of a substrate is proper in 100}, and magnesium oxide MgO is used as a material. When a lattice miss fit of oxide and superconducting oxide of this intermediate layer is high like 6 to 11%. The superconducting oxide growing on the oxide of the intermediate layer performs pseudo epitaxial growth having fluctuation in in-plane orientation. Due to this fluctuation, low inclination grain boundaries less than one degree of an inclination of a degree of not interrupting a path of a superconducting current, are generated in large numbers in a C axis oriented superconducting oxide film manufactured on the oxide of the intermediate layer. Since these low inclination grain boundaries operate as pin fastening points to trap a magnetic field, high critical current density in the magnetic field can be realized.
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公开(公告)号:JP2002338393A
公开(公告)日:2002-11-27
申请号:JP2001144534
申请日:2001-05-15
Applicant: CHUBU ELECTRIC POWER , INT SUPERCONDUCTIVITY TECH
Inventor: SUGA TOSHIHIRO , YAMADA YASUSHI , HIRABAYASHI IZUMI
IPC: C30B29/22 , C30B17/00 , C30B19/04 , H01L21/208
Abstract: PROBLEM TO BE SOLVED: To provide a solution for producing an oxide crystal, with which it is possible to improve the crystallinity of the oxide crystal when the oxide crystal having a Y123-type crystal structure is grown from a solution phase. SOLUTION: The solution is used for producing the oxide crystal by growing the oxide crystal having the Y123-type crystal structure from the solution phase by a liquid phase method. The solvent (melt) composition forming the solution phase is made to be a BaO-CuO-BaF2 system, and the atomic ratio of Ba to Cu is adjusted to be in the range of 42:58 to 20:80. Thereby, it becomes possible to lower the temperature at growing the crystal.
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公开(公告)号:JP2000322951A
公开(公告)日:2000-11-24
申请号:JP13494599
申请日:1999-05-14
Applicant: CHUBU ELECTRIC POWER , INT SUPERCONDUCTIVITY TECH
Inventor: YOSHIDA TAKASHI , HASEGAWA MASATO , HIRABAYASHI IZUMI
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an oxide-based superconductive structure capable of manufacturing a superconductive layer having a high critical temperature and high critical current density particularly in a magnetic field at a practically possible deposition rate and in a condition that there is no risk of the occurrence of a crack. SOLUTION: This method is used to manufacture an oxide-based superconductive structure by forming a superconductive layer 8 formed of an oxide-based superconductor on a base material 2. The method comprises a pseudo liquid layer forming process for forming a pseudo liquid layer 6 by the use of material having a melting point lower than that of the oxide-based superconductor, and a superconductive layer forming process for depositing the superconductive layer 8 by the use of the oxide-based superconductor after the pseudo liquid layer deposition process.
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