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1.发明专利Light emitting diode chip having radiation transparent and electric current extension layer 审中-公开具有辐射透明和电流扩展层的发光二极管芯片
公开(公告)号：JP2004214685A
公开(公告)日：2004-07-29
申请号：JP2004000661
申请日：2004-01-05
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ALBRECHT TONY , STEIN WILHELM , WIRTH RALPH
Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode chip having an epitaxial semiconductor layer row equipped with an activity layer which emits electromagnetic radiation, and an electric contact structure which contains a radiation transparent and electric current extension layer comprising ZnO, and an electric connection layer, in which the loss by absorption in an electric connection region is reduced. SOLUTION: The current extension layer has a window where the connection layer is deposited on a covering layer of the semiconductor layer row. The connection layer is connected electrically with the current extension layer. The joint part of the connection layer and the covering layer is not connected electrically or is in bad conductive connection status during operation of the light emitting diode chip. All currents or almost all currents flow in the semiconductor layer row through the current extension layer. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种具有外延半导体层行的发光二极管芯片，其具有发射电磁辐射的活性层，以及含有包含ZnO的辐射透明和电流延伸层的电接触结构，以及 电连接层中的电连接区域的吸收损失减小的电连接层。 解决方案：当前的延伸层具有连接层沉积在半导体层行的覆盖层上的窗口。 连接层与电流延伸层电连接。 连接层和覆盖层的接合部分在发光二极管芯片的操作期间没有电连接或者导电连接状态不良。 所有电流或几乎所有电流在半导体层行中流过电流延伸层。 版权所有（C）2004，JPO＆NCIPI
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公开(公告)号：JP2005340841A
公开(公告)日：2005-12-08
申请号：JP2005158103
申请日：2005-05-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ALBRECHT TONY , BRICK PETER
CPC classification number: H01S5/183 , H01S5/026 , H01S5/041 , H01S5/1064 , H01S5/4056 , H01S2301/18
Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser device having a monolithically integrated pumping beam source 20, which emits an electcomagnetic radiation having excellent beam quality.
SOLUTION: The pumping beam source has an end emitting semiconductor structure 9. The structure is suitable for emitting an electromagnetic radiation based on a curve, which can predetermine an intensity profile in the direction, which crosses the emitting direction z of the semiconductor structure.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供具有单片集成泵浦光源20的表面发射半导体激光器件，其发射具有优良光束质量的电磁辐射。 解决方案：泵浦光束源具有端部发射半导体结构9.该结构适合于基于曲线发射电磁辐射，该曲线可以预先确定横穿半导体的发射方向z的方向上的强度分布 结构体。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2004266280A
公开(公告)日：2004-09-24
申请号：JP2004055284
申请日：2004-02-27
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BRICK PETER , ALBRECHT TONY , LINDER NORBERT , WOLFGANG SCHMIDT
CPC classification number: B82Y20/00 , B82Y10/00 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/105 , H01S5/141 , H01S5/18319 , H01S5/4056
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser, having an improved lateral guide which is suitable for optical pumping of a quantum well structure 7 in the semiconductor laser, provided with a semiconductor substrate 1 having a periodical arrangement of a recess incoming portion 2 or formed by a periodical arrangement of a semiconductor area in the semiconductor substrate.
SOLUTION: A beam generated by the semiconductor laser cannot be propagated in the periodical arrangement, and a resonator 3 of the semiconductor laser lacks periodical arrangement in the lateral direction.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号：JP2005217427A
公开(公告)日：2005-08-11
申请号：JP2005024374
申请日：2005-01-31
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： PHILIPPENS MARC , ALBRECHT TONY
IPC: H01L27/15 , H01L33/08 , H01S3/10 , H01S5/026 , H01S5/18 , H01S5/183 , H01S5/20 , H01S5/40 , H01L33/00
CPC classification number: H01L27/15 , H01L33/08 , H01S5/026 , H01S5/0425 , H01S5/18311 , H01S2301/18
Abstract: PROBLEM TO BE SOLVED: To detect an operation condition from an observation direction different from a main radiation direction of coherent radiation, which is emitted during operation, without taking any special cost. SOLUTION: In a light-emitting semiconductor element having a first activation region and a second activation region disposed at the back of the first activation region in a perpendicular direction, wherein the first activation region is provided for forming the first wavelength λ 1 , and the second activation region is provided for forming the second wavelength λ 2 ; radiation of the first wavelength λ 1 is coherent, and radiation of the second wavelength λ 2 is not coherent. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：从操作期间发射的相干辐射的主辐射方向不同的观察方向检测操作条件，而不需要特别的成本。 解决方案：在具有第一激活区域和第二激活区域的发光半导体元件中，该第一激活区域和第二激活区域在垂直方向上设置在第一激活区域的背面，其中第一激活区域用于形成第一波长λ< SB> 1 ，并且提供第二激活区域用于形成第二波长λ
2 ; 第一波长λ 1 的辐射是相干的，并且第二波长λ 2 的辐射不相干。 版权所有（C）2005，JPO＆NCIPI -
公开(公告)号：JP2004214680A
公开(公告)日：2004-07-29
申请号：JP2003435310
申请日：2003-12-26
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： STEIN WILHELM , WIRTH RALPH , ALBRECHT TONY
CPC classification number: H01L33/44
Abstract: PROBLEM TO BE SOLVED: To protect a contact layer including ZnO of a photo-electric element from external influences such as humidity. SOLUTION: The photo-electric element 10 comprises stacked epitaxial semiconductor layers having an active zone 3 that radiates electromagnetic beams and at least one electrical contact region 7. The electrical contact region has at least one beam-transmitting electrical contact that includes ZnO and is conductively connected to an external semiconductor layer. The contact layer is provided by using a watertight material 8 so as to be sufficiently protected from humidity. COPYRIGHT: (C)2004,JPO&NCIPI
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Patent Agency Ranking6.发明专利Surface emitting semiconductor laser chip and method of manufacturing the same 审中-公开表面发射半导体激光芯片及其制造方法
公开(公告)号：JP2011066457A
公开(公告)日：2011-03-31
申请号：JP2010293095
申请日：2010-12-28
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： PLASS WERNER , JUNG CHRISTIAN , ALBRECHT TONY , STRELLER UDO
CPC classification number: H01S5/18311 , H01S5/0201 , H01S5/3202
Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser chip which allows an aging property to be improved or the life to be prolonged, in a surface emitting semiconductor laser chip.
SOLUTION: The surface emitting semiconductor laser chip includes a semiconductor substrate which has a crystal structure with principal crystal directions 7, a beam emitting surface 4, and sides 5 laterally delimiting the semiconductor substrate 1. In the chip, at least one of the sides 5 is disposed obliquely with respect to the principal crystal directions 7.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供一种表面发射半导体激光芯片，其在表面发射半导体激光器芯片中提供允许老化性能提高或延长寿命的表面发射半导体激光器芯片。 解决方案：表面发射半导体激光器芯片包括具有主晶体方向7的晶体结构，光束发射表面4和横向限定半导体衬底1的侧面5的半导体衬底。在芯片中，至少一个 侧面5相对于主晶体方向7倾斜地配置。版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2006060239A
公开(公告)日：2006-03-02
申请号：JP2005241702
申请日：2005-08-23
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： REILL WOLFGANG , STEEGMUELLER ULRICH , ALBRECHT TONY , WOLFGANG SCHMIDT
IPC: H01S5/183
CPC classification number: H01S5/18388 , H01S3/109 , H01S5/0224 , H01S5/041 , H01S5/141 , H01S5/18383 , H01S5/4056
Abstract: PROBLEM TO BE SOLVED: To simply manufacture a semiconductor element having a curved mirror with a cost advantage.
SOLUTION: In a semiconductor component equipped with a semiconductor having the curved mirror integrated into the semiconductor monolithically, a semiconductor layer on a thinned stress fixing layer made of metal or an alloy is pressed via the stress fixing layer, thus giving compressive or tensile stress to the semiconductor layer for forming the curved semiconductor mirror.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：简单地制造具有成本优势的具有曲面镜的半导体元件。 解决方案：在配备有半导体的半导体元件中，该半导体具有一体化成半导体的半导体，通过应力固定层将由金属或合金制成的薄应力固定层上的半导体层压制， 用于形成弯曲半导体镜的半导体层的拉伸应力。 版权所有（C）2006，JPO＆NCIPI
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8.发明专利
公开(公告)号：JP2005057286A
公开(公告)日：2005-03-03
申请号：JP2004224122
申请日：2004-07-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ALBRECHT TONY
IPC: H01S3/06 , H01S3/042 , H01S3/091 , H01S5/00 , H01S5/026 , H01S5/04 , H01S5/12 , H01S5/14 , H01S5/183 , H01S5/187 , H01S5/20
CPC classification number: H01S5/141 , H01S5/026 , H01S5/041 , H01S5/18308 , H01S5/2072 , H01S5/4056
Abstract: PROBLEM TO BE SOLVED: To provide an optical pumping beam semiconductor device, which needs only few manufacturing cost as much as possible, and to provide its manufacturing method. SOLUTION: The semiconductor device has at least one emission region, to which quantum-well texture is optically pumped, and at least one pumping region. The quantum well texture and active pumping layer are extended therethrough the pump and the emission regions of the semiconductor device. The pumping beam is constituted so that it is arranged in the input-connected manner, inside the emission region in the transverse direction. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供尽可能仅需要很少制造成本的光泵浦光束半导体器件，并提供其制造方法。 解决方案：半导体器件具有至少一个发光区域，量子阱纹理被光泵浦，至少一个泵浦区域。 量子阱结构和有源泵浦层通过泵和半导体器件的发射区域延伸。 泵浦光束被构造成使得其沿横向方向以发射区域内的输入连接方式布置。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2005057273A
公开(公告)日：2005-03-03
申请号：JP2004220797
申请日：2004-07-28
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ALBRECHT TONY , BRICK PETER , PLAINE GLENN-YVES , PHILIPPENS MARC
CPC classification number: H01L31/02162 , H01L31/0547 , Y02E10/52
Abstract: PROBLEM TO BE SOLVED: To form a semiconductor element for radiation reception such that protection against obstacle or error of a signal to be detected is further improved, and production does not need much cost technically. SOLUTION: The semiconductor substrate for radiation reception has a radiation-absorbing active-area 2, and receives electromagnetic radiation within a wavelength range between λ 1 and λ 2 , wherein λ 2 is larger than λ 1 . A filter layer 5 is provided between the active area 2 and a radiation-input coupling face 9. The active area 2 detects electromagnetic radiation having a shorter wavelength than λ 2 . A filter layer 5 absorbs electromagnetic radiation having a shorter wavelength than λ 1 , and transmits electromagnetic radiation having a longer wavelength than λ 1 . COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：为了形成用于辐射接收的半导体元件，进一步提高防止信号障碍物或误差的保护，并且技术上不需要太多的成本。 解决方案：用于辐射接收的半导体衬底具有辐射吸收有源区域2，并且在λ
1 和λ 2 之间的波长范围内接收电磁辐射， 其中λ 2 大于λ 1 。 在有源区域2和辐射输入耦合面9之间设置滤光层5.有源区域2检测波长比λ 2 更短的电磁辐射。 过滤层5吸收波长比λ<1> SB>更短波长的电磁辐射，并且发射波长比λ 1 更长的电磁辐射。 版权所有（C）2005，JPO＆NCIPI -
公开(公告)号：JP2008072126A
公开(公告)日：2008-03-27
申请号：JP2007239993
申请日：2007-09-14
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ALBRECHT TONY , BRUDERL GEORG , HAERLE VOLKER , HOEPPEL LUTZ , STRASSBURG MARTIN
CPC classification number: H01L33/24 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L31/02363 , H01L33/007 , H01L2924/0002 , H01S5/1231 , Y02E10/50 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronic semiconductor chip capable of extremely effectively operating the chip, and manufacturing at an extremely economical cost. SOLUTION: The electronics semiconductor chip is formed of a growth substrate (1) equipped with a structured growing surface (2) having a lot of protrudes (4) and recesses (3), and an array of active layers (5) deposited on the growing surface (2). COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供能够非常有效地操作芯片的光电子半导体芯片，并且以非常经济的成本制造。 解决方案：电子半导体芯片由配备有具有大量突起（4）和凹部（3）的结构化生长表面（2）的生长衬底（1）和活性层（5）阵列形成， 沉积在生长表面（2）上。 版权所有（C）2008，JPO＆INPIT
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