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    Optical element and luminaire
    3.
    发明专利
    Optical element and luminaire 有权
    光学元件和光学元件

    公开(公告)号：JP2012048247A

    公开(公告)日：2012-03-08

    申请号：JP2011202688

    申请日：2011-09-16

    Applicant: Osram Ag ,  Osram Opto Semiconductors Gmbh ,  オスラム アクチエンゲゼルシャフトOsram Ag ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： BRICK PETER ,  MUSCHAWECK JULIUS ,  SIMON SCHWALENBERG

    IPC: G02B3/00 ,  F21V17/00 ,  F21Y101/02

    CPC classification number: G02B3/0006 ,  G03B21/2033 ,  G03B21/208 ,  G03B21/625

    Abstract: PROBLEM TO BE SOLVED: To provide an optical element that reduces or avoids faults of conventional techniques, and a luminaire having the optical element.SOLUTION: The optical element includes a support plate 1 which has a first main surface 2 and a second main surface 3, and a first lens structure 4 on the first main surface 2, and the first lens structure 4 includes at least one first lens element 41 having a first polygonal shape, and a second lens element 42 having a second polygonal shape, and completely covers the first main surface 2. The first lens element 41 and second lens element 42 are not congruent with each other, and/or different in orientation on the first main surface 2. The first lens structure 4 has many lens elements having polygonal shapes respectively, the first main surface 2 has a center point, and the many lens elements occupy area, which shrinks as the distance from the center point increases, on the first main surface 2.

    Abstract translation: 要解决的问题：提供减少或避免常规技术的故障的光学元件，以及具有光学元件的照明器。 光学元件包括具有第一主表面2和第二主表面3的支撑板1和在第一主表面2上的第一透镜结构4，并且第一透镜结构4包括至少一个 具有第一多边形的第一透镜元件41和具有第二多边形形状的第二透镜元件42，并且完全覆盖第一主表面2.第一透镜元件41和第二透镜元件42彼此不一致和/ 或者在第一主表面2上的取向不同。第一透镜结构4具有分别具有多边形的许多透镜元件，第一主表面2具有中心点，并且许多透镜元件占据面积，其随着距离 中心点在第一个主表面上增加2.版权所有（C）2012，JPO＆INPIT

    Semiconductor substrate for radiation reception
    4.
    发明专利
    Semiconductor substrate for radiation reception 有权
    用于辐射接收的半导体基板

    公开(公告)号：JP2005057273A

    公开(公告)日：2005-03-03

    申请号：JP2004220797

    申请日：2004-07-28

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： ALBRECHT TONY ,  BRICK PETER ,  PLAINE GLENN-YVES ,  PHILIPPENS MARC

    IPC: H01L31/02 ,  H01L31/00

    CPC classification number: H01L31/02162 ,  H01L31/0547 ,  Y02E10/52

    Abstract: PROBLEM TO BE SOLVED: To form a semiconductor element for radiation reception such that protection against obstacle or error of a signal to be detected is further improved, and production does not need much cost technically. SOLUTION: The semiconductor substrate for radiation reception has a radiation-absorbing active-area 2, and receives electromagnetic radiation within a wavelength range between λ 1 and λ 2 , wherein λ 2 is larger than λ 1 . A filter layer 5 is provided between the active area 2 and a radiation-input coupling face 9. The active area 2 detects electromagnetic radiation having a shorter wavelength than λ 2 . A filter layer 5 absorbs electromagnetic radiation having a shorter wavelength than λ 1 , and transmits electromagnetic radiation having a longer wavelength than λ 1 . COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：为了形成用于辐射接收的半导体元件，进一步提高防止信号障碍物或误差的保护，并且技术上不需要太多的成本。 解决方案：用于辐射接收的半导体衬底具有辐射吸收有源区域2，并且在λ 1 和λ 2 之间的波长范围内接收电磁辐射， 其中λ 2 大于λ 1 。 在有源区域2和辐射输入耦合面9之间设置滤光层5.有源区域2检测波长比λ 2 更短的电磁辐射。 过滤层5吸收波长比λ<1> SB>更短波长的电磁辐射，并且发射波长比λ 1 更长的电磁辐射。 版权所有（C）2005，JPO＆NCIPI

    Vertical radiation semiconductor laser
    6.
    发明专利
    Vertical radiation semiconductor laser 审中-公开
    垂直辐射半导体激光

    公开(公告)号：JP2007165880A

    公开(公告)日：2007-06-28

    申请号：JP2006329305

    申请日：2006-12-06

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： BRICK PETER ,  LUTGEN STEPHAN

    IPC: H01S5/183 ,  H01S5/04

    CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/024 ,  H01S5/14 ,  H01S5/18383 ,  H01S5/3415 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34373

    Abstract: PROBLEM TO BE SOLVED: To improve the light pumping efficiency of a vertical radiation semiconductor laser having an external resonator, a semiconductor substrate, and a Bragg reflector.
    SOLUTION: A vertical radiation semiconductor laser is constituted, which is characterized by having an external resonator (7) and a semiconductor substrate (1) and in that the semiconductor substrate has a quantum layer structure (2) including a plurality of quantum layers (3) and barrier layers (4) between the quantum layers as an active zone also has a Bragg reflector (5) on one surface of the quantum layer structure (2), and a pumping beam source (9) for projecting pumping beams (10) into the quantum layer structure (2) is provided, wherein the Bragg reflector (5) includes a plurality of layers while the layers are arranged non-periodically so that the absorption of the pumping beams (10) is carried out substantially in the quantum layer structure (2).
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提高具有外部谐振器，半导体衬底和布拉格反射器的垂直辐射半导体激光器的光泵浦效率。 解决方案：构成垂直辐射半导体激光器，其特征在于具有外部谐振器（7）和半导体衬底（1），并且半导体衬底具有包括多个量子的量子层结构（2） 作为有源区的量子层之间的层（3）和势垒层（4）也在量子层结构（2）的一个表面上具有布拉格反射器（5），以及用于将泵浦光束 （10）进入量子层结构（2），其中布拉格反射器（5）包括多个层，而这些层被非周期性地布置，使得泵浦光束（10）的吸收基本上在 量子层结构（2）。 版权所有（C）2007，JPO＆INPIT

    Laser diode device, laser system having at least one laser diode device, and optically pumped laser
    7.
    发明专利
    Laser diode device, laser system having at least one laser diode device, and optically pumped laser 审中-公开
    激光二极管器件，具有至少一个激光二极管器件的激光系统和光学激光器

    公开(公告)号：JP2007096326A

    公开(公告)日：2007-04-12

    申请号：JP2006265703

    申请日：2006-09-28

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： KOENIG HARALD ,  BRICK PETER ,  MOOSBURGER JUERGEN

    IPC: H01S5/22

    CPC classification number: H01S5/4031 ,  H01S5/0014 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/183

    Abstract: PROBLEM TO BE SOLVED: To provide a laser diode device that readily operates with small variations in various active regions among operating temperatures, a laser system having the laser diode device, and an optically pumped laser that can be pumped easily and effectively. SOLUTION: The laser diode device has active regions that are adjacent to each other and vary in lateral dimension in the lateral direction and/or in spacing therebetween in the lateral direction. A laser system comprises the laser diode device placed on a support. In the laser system, the spacing between a side surface and an edge in contact with the support is smaller than the spacing between the side surface and an active region closest to the side surface, and/or is smaller than the spacing between two adjacent active regions in the laser diode device. An optically pumped laser is pumped by the laser diode device or the laser system. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种激光二极管器件，其在工作温度中的各种有源区域中具有小的变化，具有激光二极管器件的激光器系统和能够容易且有效地泵浦的光泵浦激光器而容易操作。 解决方案：激光二极管器件具有彼此相邻的有源区域，并且在横向方向上横向尺寸和/或横向方向上的间隔变化。 激光系统包括放置在支撑体上的激光二极管装置。 在激光系统中，侧表面和与支撑件接触的边缘之间的间距小于侧表面和最靠近侧表面的有源区域之间的间隔，和/或小于两个相邻活性物体之间的间隔 激光二极管器件中的区域。 光泵浦激光器由激光二极管器件或激光系统泵浦。 版权所有（C）2007，JPO＆INPIT

    End surface emitting semiconductor laser comprising plurality of monolithically integrated laser diodes
    10.
    发明专利
    End surface emitting semiconductor laser comprising plurality of monolithically integrated laser diodes 审中-公开
    单面激光二极管的多面体结束表面发射半导体激光

    公开(公告)号：JP2008085339A

    公开(公告)日：2008-04-10

    申请号：JP2007249247

    申请日：2007-09-26

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： BRICK PETER ,  LUFT JOHANN ,  MUELLER MARTIN ,  PHILIPPENS MARC

    IPC: H01S5/40

    CPC classification number: H01S5/4043 ,  B82Y20/00 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/2004 ,  H01S5/3095 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/4018 ,  H01S5/4087

    Abstract: PROBLEM TO BE SOLVED: To achieve improved radiation of heat generated by each of laser diodes, and reduced temperature difference in active bands of the laser diodes, at comparatively little manufacturing cost, in an end surface emitting that includes laser diodes 1, 2, and 3 having active bands 11, 12, and 13, respectively, each of which is arranged between waveguide layers 6; a waveguide layer that is brought into contact with coating layers 7 and 8 in the side opposite to the active band; the coating layers including an inside coating layer 7 positioned above the active band 11 located at the lowest position and positioned below the active band 13 located at the uppermost position, and an outside coating layer 8 positioned below the active band located at the lowest position or positioned above the active band located at the uppermost position.
    SOLUTION: In the end surface emitting semiconductor laser, the inside coating layer (7) is slightly thicker than the outside coating layer (8).
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：为了实现由激光二极管产生的热量的改善的辐射，并且在相对较小的制造成本下，在包括激光二极管1的发射端面中降低激光二极管的有效频带的温度差， 2和3分别具有有源频带11,12和13，它们各自布置在波导层6之间; 在与有源带相反的一侧与涂层7和8接触的波导层; 涂覆层包括位于位于最低位置并位于位于最上位置的有源带13下方的有源带11上方的内涂层7和位于最低位置处的有源带下方的外涂层8，或 位于位于最上位置的有源频带上方。 解决方案：在端面发射半导体激光器中，内涂层（7）比外涂层（8）稍厚。 版权所有（C）2008，JPO＆INPIT

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