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    Radiation emitter, and method for manufacturing the same
    2.
    发明专利
    Radiation emitter, and method for manufacturing the same 审中-公开
    辐射发射器及其制造方法

    公开(公告)号：JP2007288195A

    公开(公告)日：2007-11-01

    申请号：JP2007105864

    申请日：2007-04-13

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： HAHN BERTHOLD ,  HAERLE VOLKER ,  WINDISCH REINER

    IPC: H01L33/22 ,  H01L33/46

    CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation emitter 1 having an efficient radiation output. SOLUTION: A radiation emitter has a layer continuation 55 having an active area 2 for generating electromagnetic radiation; an output layer 4 disposed on the first side of the layer continuation 55, for outputting the generated radiation; a reflective layer 3 disposed on a second side opposite to the first side, for reflecting the generated radiation; and a boundary surface 10 of the layer continuation 55 having a structuring part of the side provided with a plurality of projecting structuring elements 6 and facing the reflective layer 3. The reflective layer 3 is connected to the layer continuation 55 so as to have the structuring part corresponding to the structuring part of the boundary surface 10. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有有效辐射输出的辐射发射器1。 解决方案：辐射发射器具有层延续件55，其具有用于产生电磁辐射的有源区域2; 布置在层延续部分55的第一侧上的输出层4，用于输出产生的辐射; 设置在与第一侧相反的第二侧的反射层3，用于反射所产生的辐射; 以及层延伸件55的边界面10，其具有设置有多个突出结构元件6并且面向反射层3的一侧的结构部分。反射层3连接到层延伸部55，以具有结构化 部分对应于边界面10的结构部分。版权所有（C）2008，JPO＆INPIT

    Method for manufacturing many semiconductor substrates, and electronic semiconductor substrate
    6.
    发明专利
    Method for manufacturing many semiconductor substrates, and electronic semiconductor substrate 有权
    用于制造多个半导体衬底的方法和电子半导体衬底

    公开(公告)号：JP2005109424A

    公开(公告)日：2005-04-21

    申请号：JP2004038602

    申请日：2004-02-16

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： HAERLE VOLKER ,  LUGAUER HANS-JURGEN ,  MILLER STEPHAN ,  BADER STEFAN

    IPC: H01L21/205 ,  H01L33/00 ,  H01S5/323

    CPC classification number: H01L33/007

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a plurality of semiconductor substrates wherein defect between component layer sequence can be reduced. SOLUTION: A mask layer 3 having a plurality of windows is formed over a substrate 1/an initial layer 2. A semiconductor material 5 which should grow up on the substrate in a consecutive process is made not to grow substantially on a mask layer. Etching back of the substrate/the primitive layer is performed in windows, and trenches are formed in the substrate/the initial layer starting from the windows. The semiconductor material 5 is grown onto the substrate/the initial layer. Priority is given to lateral growth, the semiconductor material departs from flanks 43 of the trenches first, and grows toward the center of the trenches where a coalescence region 61 is formed. As a result, defects in the substrate/the initial layer which impinge on the flanks 43 of the trenches bend off toward the center of the trenches. The semiconductor material grows over the mask layer, grows over the mask layer between adjacent windows, where the other coalescence region 62 is formed. The component layer sequence 8 is grown on the semiconductor material. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种制造多个半导体衬底的方法，其中可以减少组件层序列之间的缺陷。 解决方案：在衬底1 /初始层2上形成具有多个窗口的掩模层3.使得在连续工艺中在衬底上长大的半导体材料5不会基本上在掩模上生长 层。 在窗口中执行基板/原始层的蚀刻，并且从窗口开始在基板/初始层中形成沟槽。 半导体材料5生长在基板/初始层上。 优先考虑横向生长，半导体材料首先从沟槽的侧面43离开，并且朝着形成聚结区域61的沟槽的中心生长。 结果，撞击在沟槽的侧面43上的衬底/初始层中的缺陷朝向沟槽的中心弯曲。 半导体材料在掩模层上生长，在相邻窗口之间的掩模层上生长，其中形成另外的聚结区域62。 组件层序列8在半导体材料上生长。 版权所有（C）2005，JPO＆NCIPI

    Forming method for at least one region or at least one mesa structure or ridge structure electrically pumped in layer or in layer sequence
    9.
    发明专利
    Forming method for at least one region or at least one mesa structure or ridge structure electrically pumped in layer or in layer sequence 有权
    至少一个地区或至少一个MESA结构或RIDGE结构的形成方法电层或层层序列

    公开(公告)号：JP2004289149A

    公开(公告)日：2004-10-14

    申请号：JP2004074906

    申请日：2004-03-16

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： HOES CHRISTINE ,  WEIMAR ANDREAS ,  LEBER ANDREAS ,  LELL ALFRED ,  FISCHER HELMUT ,  HAERLE VOLKER

    IPC: H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323

    CPC classification number: H01L33/005 ,  H01S5/021 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/32341 ,  Y10S438/951

    Abstract: PROBLEM TO BE SOLVED: To provide a forming method which is self-adjustable and forms a structure width especially of ≤2 μm technically and simply in the forming method for at least one mesa structure or ridge structure, or at least one region electrically pumped in a layer or in a layer sequence.
    SOLUTION: A mesa size or a ridge size is decided by structuring by mounting a mask layer on a sacrificial layer attached on the layer or on the layer sequence. The mesa structure or the ridge structure is formed in the layer or in the layer sequence by partially removing the sacrificial layer and the layer or the layer sequence. A sacrificial layer whose width is narrower compared with a layer remained on the sacrificial layer is left by selectively remove a part of the sacrificial layer from a side face of the exposed sacrificial layer. A coating is attached to an edge portion of the formed structure. The sacrificial layer is removed by fully coating the side face of the residual sacrificial layer by a coating material. Layers remained on the sacrificial layer are peeled off.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种自调节的成形方法，在至少一个台面结构或脊结构的成形方法中技术上和简单地形成特别是≤2μm的结构宽度，或至少一个区域 以层或层序顺序电泵浦。 解决方案：通过在附着在层或层序列上的牺牲层上安装掩模层来构造台面尺寸或脊尺寸。 通过部分去除牺牲层和层或层序列，在层或层序中形成台面结构或脊结构。 通过从暴露的牺牲层的侧面选择性地去除牺牲层的一部分，留下了与残留在牺牲层上的层相比宽度窄的牺牲层。 涂层附着到所形成的结构的边缘部分。 通过涂覆材料完全涂覆残留牺牲层的侧面来去除牺牲层。 残留在牺牲层上的层被剥离。 版权所有（C）2005，JPO＆NCIPI

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