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1.发明专利
公开(公告)号：JP2004260178A
公开(公告)日：2004-09-16
申请号：JP2004046959
申请日：2004-02-23
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： STEIN WILHELM , FEHRER MICHAEL , BAUR JOHANNES , WINTER MATTHIAS , PLOESSL ANDREAS , KAISER STEPHAN , HAHN BERTHOLD , EBERHARD FRANZ
Abstract: PROBLEM TO BE SOLVED: To provide an enhanced electric contact in a high reflection factor, excellent ohmic contact to a semiconductor, each other's excellent adhesion between layers which form excellent adhesion and contact on the semiconductor, good thermal stability, high stability to the environmental-impact factor, and soldering possibility and structuring possibility. SOLUTION: This electric contact of the photoelectron semiconductor chip 1 comprises a mirror layer 2 made of metal or metal alloy, a protective layer 3 for reducing the corrosion of the mirror layer 2, a barrier layer 4, an adhesion intermediate layer 5, and a solder layer 8. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：JP2007073998A
公开(公告)日：2007-03-22
申请号：JP2006337515
申请日：2006-12-14
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BAUR JOHANNES , EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER DR , JACOB ULRICH , PLASS WERNER , STRAUS UWE , VOELKL JOHANNES , ZEHNDER ULRICH
CPC classification number: H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip suitable for high radiation output so that output efficiency of radiation generated in the semiconductor chip is improved.
SOLUTION: At least one vertical surface of a semiconductor chip, which is used as an output surface, is longer than a lateral surface in an extending direction of an active zone.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：提供适合于高辐射输出的半导体芯片，从而提高在半导体芯片中产生的辐射的输出效率。 解决方案：用作输出表面的半导体芯片的至少一个垂直表面比活动区域的延伸方向上的侧表面长。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2004258656A
公开(公告)日：2004-09-16
申请号：JP2004047879
申请日：2004-02-24
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： HAHN BERTHOLD , HAERLE VOLKER
IPC: G02F1/1333 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/14
CPC classification number: H01L27/3244 , H01L27/3209 , H01L27/3211 , H01L29/78684 , H01L2251/5323
Abstract: PROBLEM TO BE SOLVED: To provide a display device whose control electronic circuit is improved by reducing absorption in the control electronic circuit or avoiding it as completely as possible. SOLUTION: The display device has a 1st array with individual display elements and a 2nd array of control transistors for the display elements, and each control transistor is formed having a band gap of such size that transmissivity is obtained in the visible spectrum range. The method for manufacturing a display element of such a kind is included. COPYRIGHT: (C)2004,JPO&NCIPI
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4.发明专利
公开(公告)号：JP2011014938A
公开(公告)日：2011-01-20
申请号：JP2010233892
申请日：2010-10-18
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BADER STEFAN , HAHN BERTHOLD , HAERLE VOLKER , LUGAUER HANS-JURGEN , MUNDBROD-VANGEROW MANFRED , EISERT DOMINIK
Abstract: PROBLEM TO BE SOLVED: To provide a light emitting semiconductor element which is enhanced in radiation efficiency, and a method of manufacturing the light emitting semiconductor element.SOLUTION: The light emitting semiconductor element has a first main surface and a second main surface, and a semiconductor base of the semiconductor element is formed by a stack of various group III-V nitride semiconductor layers. At least part of produced radiation is passed through the first main surface to be output and coupled, and a reflector is bonded to the second main surface. A group III-V nitride layer is bonded to a junction substrate having a substrate base and an intermediate layer, and the substrate base has a larger coefficient of thermal expansion than the group III-V nitride layer, which is deposited on the intermediate layer.
Abstract translation: 要解决的问题：提供一种提高辐射效率的发光半导体元件和制造发光半导体元件的方法。解决方案：发光半导体元件具有第一主表面和第二主表面，以及 半导体元件的半导体基底由各种III-V族氮化物半导体层的叠层形成。 产生的辐射的至少一部分通过第一主表面以被输出和耦合，并且反射器被结合到第二主表面。 III-V族氮化物层被结合到具有基底和中间层的接合衬底上，并且衬底基底具有比沉积在中间层上的III-V族氮化物层更大的热膨胀系数。
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5.发明专利
公开(公告)号：JP2010187033A
公开(公告)日：2010-08-26
申请号：JP2010125863
申请日：2010-06-01
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BAUR JOHANNES , EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER DR
CPC classification number: H01L33/20
Abstract: PROBLEM TO BE SOLVED: To provide a radiation-emitting semiconductor component which can be produced from a wafer with a better area yield and is suitable to high optical output, and a method for the production thereof. SOLUTION: The radiation-emitting semiconductor component has a radiation-transmissive substrate, on the underside of which a radiation-generating layer is arranged, in which the substrate has inclined side surfaces, in which the refractive index of the substrate is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region, into which no photons are coupled directly from the radiation-generating layer, and in which the substrate has essentially perpendicular side surfaces in the unilluminated region. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种可以从具有更好的面积产率的晶片生产并适用于高光输出的辐射发射半导体组件及其制造方法。 解决方案：辐射发射半导体部件具有辐射透射性基板，其下侧布置有辐射发生层，其中基板具有倾斜侧表面，其中基板的折射率较大 比其中折射率差导致没有光子直接从辐射产生层耦合的未照射衬底区域的辐射产生层的折射率，并且其中衬底具有基本垂直的侧表面 未发光区域。 版权所有（C）2010，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2007201493A
公开(公告)日：2007-08-09
申请号：JP2007072671
申请日：2007-03-20
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BADER STEFAN , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER , LUGAUER HANS-JURGEN
CPC classification number: B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To obtain a III-V nitride semiconductor material, based radiation-emitting semiconductor, which allows its manufacture to be simple in terms of technology and thereby being inexpensive to be performed, and has high external quantum efficiency. SOLUTION: This radiation-emitting semiconductor chip is constituted, in which a thin-layer element is attached on a conductive substrate in a p-type side and has a contact surface in a n-type side, a buffer layer adjoining the contact surface of the thin-layer element has an AlGaN-based material, a side facing the contact surface of the buffer layer has the Al content higher than that of an side opposite to the contact surface, the buffer layer has many conductive regions made from the III-V nitride semiconductor material, and remaining regions of the buffer layer have other III-V nitride semiconductor materials, and which has many layers made from III-V nitride semiconductor materials and provided with n-type and p-type sides. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：为了获得能够使其制造在技术方面简单且由此廉价的III-V族氮化物半导体材料的基于辐射的发光半导体，并且具有高的外部量子效率。 解决方案：该发光半导体芯片是这样构成的，其中薄膜元件被附着在p型侧的导电性基板上，并且在n型侧具有接触面， 薄层元件的接触表面具有AlGaN基材料，与缓冲层的接触表面相对的一侧的Al含量高于与接触表面相反的一侧的Al含量，缓冲层具有许多导电区域 III-V族氮化物半导体材料和缓冲层的其余区域具有其它III-V族氮化物半导体材料，并且具有由III-V族氮化物半导体材料制成并具有n型和p型侧的多层。 版权所有（C）2007，JPO＆INPIT
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7.发明专利
公开(公告)号：JP2004336040A
公开(公告)日：2004-11-25
申请号：JP2004134157
申请日：2004-04-28
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： HAHN BERTHOLD , HAERLE VOLKER
IPC: H01L21/20 , H01L21/205 , H01L33/00
CPC classification number: H01L33/007 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647
Abstract: PROBLEM TO BE SOLVED: To provide a method of fabricating a multitude of semiconductor chips of high quality achieving an improved yield. SOLUTION: The method comprises steps of: forming on a baseboard 1 a mask layer 3 having a plurality of windows opened to the baseboard 1; growing a semiconductor material 5 on the baseboard such that the semiconductor material is grown starting from on the windows so as to make excess growth, merge in the midway between neighboring windows beyond the mask layer and form merge regions 8 there; growing arrays of element layers on the semiconductor material; and separating the combination made up of the baseboard, the mask layer, the semiconductor material and the arrays of element layers into individual semiconductor chips along the merge regions. COPYRIGHT: (C)2005,JPO&NCIPI
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8.发明专利Method of manufacturing optical semiconductor device, and optical semiconductor device 有权制造光学半导体器件的方法和光学半导体器件
公开(公告)号：JP2011035433A
公开(公告)日：2011-02-17
申请号：JP2010256649
申请日：2010-11-17
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JURGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
CPC classification number: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device capable of improving quantum efficiency. SOLUTION: An indium content of at least one well layer is increased in a step of growing the well layer. In the optical semiconductor device, the well layer has a first composition based on a nitride semiconductor material with first electron energy, and a barrier layer has a second composition based on the nitride semiconductor material with second electron energy higher than the first electron energy. A beam activated quantum well layer is grown on the barrier layer. Non-radiative well layers and the barrier layers form a superlattice for the beam activated quantum well layer. The layer thickness of the beam activated quantum well layer is larger than the layer thickness of the well layer of the superlattice. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供一种能够提高量子效率的制造光半导体器件的方法。 解决方案：在生长阱层的步骤中增加至少一个阱层的铟含量。 在光半导体器件中，阱层具有基于具有第一电子能的氮化物半导体材料的第一组成，并且阻挡层具有基于具有高于第一电子能的第二电子能的氮化物半导体材料的第二组成。 光束激发量子阱层生长在阻挡层上。 非辐射阱层和阻挡层形成用于束激活量子阱层的超晶格。 束活化量子阱层的层厚度大于超晶格阱层的层厚度。 版权所有（C）2011，JPO＆INPIT
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9.发明专利Optoelectronic semiconductor device and production process of the optoelectronic semiconductor device 审中-公开光电半导体器件的制造和光电子半导体器件的生产过程
公开(公告)号：JP2009260357A
公开(公告)日：2009-11-05
申请号：JP2009099377
申请日：2009-04-15
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： EBERHARD FRANZ , HAHN BERTHOLD , KAISER STEPHAN , MAYER BERND
CPC classification number: H01L33/44 , H01L33/30 , H01S5/0281 , H01S5/0282 , H01S5/162 , H01S5/183 , H01S5/405
Abstract: PROBLEM TO BE SOLVED: To realize an optoelectronic semiconductor device suitable for high optical output power. SOLUTION: The optoelectronic semiconductor device 1 consists of semiconductor crystal material containing at least one of gallium and aluminum substance, and the optoelectronic semiconductor device includes at least one optical active region 2 with its surface, on which at least one optical surface 3 is formed, and at least one boundary layer 4 formed in a position facing an optical surface 3 in the optical active region 2 and consisting of one up to ten layers of monomolecular layers, which contains sulfur or selenium. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：实现适用于高光输出功率的光电半导体器件。 光电子半导体器件1由包含镓和铝物质中的至少一种的半导体晶体材料组成，并且光电子半导体器件包括至少一个具有其表面的光学有源区域2，至少一个光学表面3 形成有至少一个边界层4，该边界层4形成在与光学有源区域2中的光学表面3相对的位置中，并且由含有硫或硒的至多10层的单分子层构成。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2007073986A
公开(公告)日：2007-03-22
申请号：JP2006301854
申请日：2006-11-07
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BADER STEFAN , EISERT DOMINIK , HAHN BERTHOLD , HAERLE VOLKER DR
CPC classification number: H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/44
Abstract: PROBLEM TO BE SOLVED: To provide a technically simple and an inexpensive method for manufacturing a GaN-based semiconductor device, and to provide a method for manufacturing the semiconductor device which has enhanced luminous efficiency. SOLUTION: A plurality of GaN-based layers (4) are applied onto a laminated substrate which has a substrate body (1) and an interlayer (2). In this case, the thermal expansion coefficient of the substrate body (1) is similar to or greater than that of the GaN-based layers (4), and the GaN-based layers (4) are deposited on the interlayer (2). Preferably, the interlayer and the substrate body are bonded by a wafer bonding process. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：为了提供一种技术上简单且便宜的GaN基半导体器件的制造方法，并提供一种具有增强的发光效率的半导体器件的制造方法。 解决方案：将多个GaN基层（4）施加到具有基板主体（1）和中间层（2）的层叠基板上。 在这种情况下，基板主体（1）的热膨胀系数与GaN基层（4）的热膨胀系数相似或更大，并且GaN基层（4）沉积在中间层（2）上。 优选地，通过晶片接合工艺来接合中间层和基板主体。 版权所有（C）2007，JPO＆INPIT
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