公开(公告)号：JP2006074051A

公开(公告)日：2006-03-16

申请号：JP2005251976

申请日：2005-08-31

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： WOLFGANG SCHMIDT ,  STREUBEL KLAUS ,  LINDER NORBERT

IPC: H01S5/183

CPC classification number: H01S5/14 ,  H01S5/18308 ,  H01S5/2072

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor substrate for a surface-emitting laser with improved high output and current supply, a surface-emitting laser, and a method for manufacturing the semiconductor substrate, at a low technical cost.
SOLUTION: A semiconductor substrate (1), comprising an active layer (4) for causing emission light to emerge and a current supply layer (6) having a current block region (12) and a current pass region (13) and emitting emission light, having the vertical emission direction, is provided for a surface-emitting laser equipped equipped with an external resonator, and the external resonator has a predetermined resonator volume (14) that overlaps with the current passing region (13).
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：以技术上的低成本提供具有改进的高输出和电流供应的表面发射激光器的半导体衬底，表面发射激光器和半导体衬底的制造方法。 解决方案：一种半导体衬底（1），包括用于引发发射光的有源层（4）和具有电流阻挡区域（12）和电流通过区域（13）的电流供应层（6），以及 具有垂直发射方向的发射发射光被提供给配备有外部谐振器的表面发射激光器，并且外部谐振器具有与电流通过区域（13）重叠的预定谐振器体积（14）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005109507A

公开(公告)日：2005-04-21

申请号：JP2004288292

申请日：2004-09-30

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BEHRES ALEXANDER ,  LINDER NORBERT ,  MEIER BERND

IPC: H01S5/343 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00

CPC classification number: C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L33/0062

Abstract: PROBLEM TO BE SOLVED: To provide a method, capable of reducing an influence of the quality of a substrate on optical and electrical qualities of a constituent element layer line, and to improve stability in a secular variation.
SOLUTION: At least one continuous layer having one of the first group III-V compound semiconductor material layers and one of the second group III-V compound semiconductor material layers is attached to a substrate or a buffer layer, before the epitaxial constituent element layer line is attached, wherein the first group III-V compound semiconductor material layers and the second group III-V compound semiconductor material layers have mutually different composition, and also include a first group of a group V elements and a second group of the group V elements.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够降低基板质量对构成元件层线的光学和电学质量的影响并提高长期变化的稳定性的方法。 解决方案：在外延成分之前，将至少一个具有第一III-V族化合物半导体材料层之一和第二组III-V族化合物半导体材料层之一的连续层附着到基板或缓冲层 元件层线连接，其中第一III-V族化合物半导体材料层和第二III-V族化合物半导体材料层具有相互不同的组成，并且还包括第一组V族元素和第二组 V组元素。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2007103930A

公开(公告)日：2007-04-19

申请号：JP2006262661

申请日：2006-09-27

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDER NORBERT ,  GROENNINGER GUENTHER ,  HEIDBORN PETER ,  STREUBEL KLAUS ,  KUGLER SIEGMAR

IPC: H01L21/205 ,  H01L31/0264 ,  H01L33/02 ,  H01L33/04 ,  H01L33/30 ,  H01S5/02 ,  H01S5/323 ,  H01S5/327

CPC classification number: H01L33/04 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L33/025 ,  H01L33/30

Abstract: PROBLEM TO BE SOLVED: To provide an improved quasi-substrate having a lattice constant lower than the lattice constant of GaAs, and a semiconductor device comprising the quasi-substrate. SOLUTION: On a semiconductor substrate (1) made of GaAs, semiconductor layer arrangements (2, 13, 14, and 35) are given. The semiconductor layer arrangements (2, 13, 14, and 35) comprise many semiconductor layers of Al 1-y Ga y As 1-x P x [in the formula, 0≤x≤1, 0≤y≤1]. In this regard, some semiconductor layers comprise phosphorous proportion x. The proportion is larger than proportion in an adjacent semiconductor layer both in the growth direction of the semiconductor layer arrangement and under it. The invention comprises a semiconductor device comprising the substrate. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有低于GaAs的晶格常数的晶格常数的改进的准衬底，以及包括准衬底的半导体器件。 解决方案：在由GaAs制成的半导体衬底（1）上，给出半导体层布置（2,13,14和35）。 半导体层布置（2,13,14和35）包括许多半导体层，其中，Al 1-x P x 在式中，0≤x≤1,0≤y≤1]。 在这方面，一些半导体层包括磷比例x。 在半导体层布置的生长方向和其下方的相邻半导体层中的比例大于比例。 本发明包括一种包括该衬底的半导体器件。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005109495A

公开(公告)日：2005-04-21

申请号：JP2004281689

申请日：2004-09-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDER NORBERT ,  PIETZONKA INES

IPC: H01L33/02 ,  H01L33/06 ,  H01L33/26 ,  H01L33/28 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/02 ,  H01L33/06 ,  H01L33/26 ,  H01L33/28

Abstract: PROBLEM TO BE SOLVED: To improve the degree of confinement of charge carrier in a radiation forming semiconductor body of InGaAlP base. SOLUTION: At least one side of confinement layers comprises In x Al y Ga 1-x-y P u N 1-u [0≤x≤1, 0≤y≤1, 0≤x+y≤1 and 0≤u z In x Al y Ga 1-x-y-z P u N 1-u [0≤x≤1, 0≤y≤1, 0 COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高InGaAlP基体的辐射形成半导体体中的载流子的限制程度。 解决方案：约束层的至少一侧包括：在 ＆lt;＆lt; SB＆gt; [0≤x≤1,0≤y≤1,0≤x+y≤1且0≤u<1]，和/或B SB>在 X 铝ý GA 1-XYZ P û名词 1-U [0≤x≤1,0≤y≤1,0

公开(公告)号：JP2007013164A

公开(公告)日：2007-01-18

申请号：JP2006178393

申请日：2006-06-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDER NORBERT

IPC: H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01S5/323

CPC classification number: H01L33/30 ,  H01L33/02 ,  H01L33/305 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3063 ,  H01S5/3072 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To reduce the diffusion of p-type dopants to an active layer efficiently by providing a light emitting photoelectric semiconductor chip comprising an improved diffusion barrier. SOLUTION: A first undoped layer and a second undoped layer contain aluminum. The first undoped layer has an aluminum component y1. The second undoped layer has an aluminum component y2. The amount of the aluminum component y1 of the first undoped layer is larger than the amount of the aluminum component y2 of the second undoped layer. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：通过提供包括改进的扩散阻挡层的发光光电半导体芯片，有效地减少p型掺杂剂向有源层的扩散。 解决方案：第一未掺杂层和第二未掺杂层含有铝。 第一未掺杂层具有铝成分y1。 第二未掺杂层具有铝成分y2。 第一未掺杂层的铝成分y1的量比第二未掺杂层的铝成分y2的量大。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004266280A

公开(公告)日：2004-09-24

申请号：JP2004055284

申请日：2004-02-27

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BRICK PETER ,  ALBRECHT TONY ,  LINDER NORBERT ,  WOLFGANG SCHMIDT

IPC: H01S5/20 ,  H01S5/00 ,  H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/34

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/101 ,  H01S5/105 ,  H01S5/141 ,  H01S5/18319 ,  H01S5/4056

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser, having an improved lateral guide which is suitable for optical pumping of a quantum well structure 7 in the semiconductor laser, provided with a semiconductor substrate 1 having a periodical arrangement of a recess incoming portion 2 or formed by a periodical arrangement of a semiconductor area in the semiconductor substrate.
SOLUTION: A beam generated by the semiconductor laser cannot be propagated in the periodical arrangement, and a resonator 3 of the semiconductor laser lacks periodical arrangement in the lateral direction.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004207724A

公开(公告)日：2004-07-22

申请号：JP2003421217

申请日：2003-12-18

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BRICK PETER ,  LUTGEN STEPHAN ,  LINDER NORBERT

IPC: H01S5/14 ,  H01S5/028 ,  H01S5/04 ,  H01S5/183 ,  H01S5/187

CPC classification number: H01S5/183 ,  H01S5/028 ,  H01S5/041 ,  H01S5/141

Abstract: PROBLEM TO BE SOLVED: To provide laser that can perform an efficient pumping mechanism with only a slight loss.
SOLUTION: The wavelength λ
p and the incident angle α
p of pumping light are specified so that the pumping light may be absorbed primarily inside a quantum well.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供只能轻微损耗的能够执行有效泵送机构的激光器。 解决方案：指定泵浦光的波长λ p 和入射角α p ，使得泵浦光主要被吸收在量子阱内。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2008182245A

公开(公告)日：2008-08-07

申请号：JP2008014864

申请日：2008-01-25

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDER NORBERT ,  REUFER MARTIN

IPC: H01S5/30 ,  H01L33/00 ,  H01S3/0933 ,  H01S5/026 ,  H01S5/12

CPC classification number: H01S3/168 ,  H01S3/0635 ,  H01S3/0933

Abstract: PROBLEM TO BE SOLVED: To provide a means capable of exciting an organic semiconductor laser without any external laser source which requires high cost and much space, and a method of manufacturing such an organic semiconductor. SOLUTION: An optical pump source is integrally connected to an organic semiconductor laser. Advantageously, the pump source and the organic semiconductor laser are fixedly connected to each other to form a unit. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够激发有机半导体激光器的装置，而不需要高成本和大量空间的任何外部激光源，以及制造这种有机半导体的方法。 解决方案：光泵浦源与有机半导体激光器整体连接。 有利地，泵浦源和有机半导体激光器彼此固定地连接以形成一个单元。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008047906A

公开(公告)日：2008-02-28

申请号：JP2007209632

申请日：2007-08-10

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： EBERHARD FRANZ ,  GROETSCH STEFAN ,  LINDER NORBERT ,  MOOSBURGER JUERGEN ,  STREUBEL KLAUS ,  WIRTH RALPH ,  SABATHIL MATTHIAS ,  MUSCHAWECK JULIUS ,  BERGENEK KRISTER

IPC: H01L33/44 ,  H01L33/46 ,  H01L33/58

CPC classification number: H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

Abstract: PROBLEM TO BE SOLVED: To provide a radiation emission element which can actualize relatively high luminance in a desired spatial direction, in a desired polarization direction or at a desired wavelength. SOLUTION: The radiation emission element according to the present invention is based on a semiconductor material and comprises a layer stack having an active layer sequence for producing a radiation emission element and a filter element placed at a rear side of the active layer sequence as seen from a radiation direction, and is configured in such a manner that the filter element emits a first emission component and reflects a second emission component within the layer stack, the second reflection component, after being reflected at the filter element, is subjected to deflection process or absorption emission process, and the radiation deflected or emitted is supposed to come into the filter element again. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以在期望的空间方向上，在期望的偏振方向或期望的波长上实现相对高的亮度的辐射发射元件。 解决方案：根据本发明的辐射发射元件基于半导体材料并且包括具有用于产生辐射发射元件的有源层序列和放置在有源层序列的后侧的滤波器元件的层堆叠 从辐射方向看，并且被配置为使得过滤元件发射第一发射分量并且反射层堆内的第二发射分量，第二反射分量在被滤波元件反射之后经受 偏转过程或吸收发射过程，并且偏转或发射的辐射应该再次进入过滤元件。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2003304033A

公开(公告)日：2003-10-24

申请号：JP2003091016

申请日：2003-03-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング

Inventor： SPAETH WERNER DR ,  LUFT JOHANN ,  LUTGEN STEPHAN ,  LINDER NORBERT ,  ALBRECHT TONY ,  STEEGMUELLER ULRICH

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/062 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183

CPC classification number: H01S5/141 ,  H01S5/026 ,  H01S5/041 ,  H01S5/06226 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/18305 ,  H01S5/1835 ,  H01S5/4056

Abstract: PROBLEM TO BE SOLVED: To improve a semiconductor laser device to modulate an output power at a high speed.
SOLUTION: A surface emission semiconductor laser device is provided with a perpendicular emitter (20) that can be optically pumped, which is provided with at least one modulation beam source (30) to modulate an output power of the surface emission semiconductor laser device that is a type having a beam formation layer (14). The modulation beam source includes an edge radiation semiconductor structure (15) having an active layer forming a beam, and the modulation beam source is arranged to radiate a beam from the semiconductor laser device during operation. The generated beam is inputted in the active layer (14) for forming the beam of the perpendicular emitter (20) and is joined with it.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提高半导体激光装置以高速调制输出功​​率。 解决方案：表面发射半导体激光器件设置有可被光学泵浦的垂直发射器（20），其设有至少一个调制束源（30），以调制表面发射半导体激光器的输出功率 装置，其是具有光束形成层（14）的类型。 调制光束源包括具有形成光束的有源层的边缘辐射半导体结构（15），并且调制光束源被布置成在操作期间辐射来自半导体激光器件的光束。 所产生的光束被输入到有源层（14）中，用于形成垂直发射器（20）的光束并与之连接。 版权所有（C）2004，JPO