公开(公告)号：DE60041569D1

公开(公告)日：2009-04-02

申请号：DE60041569

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： FURUSAWA MASAHIRO ,  SEKI SHUNICHI ,  MIYASHITA SATORU ,  SHIMODA TATSUYA ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: H01L31/042 ,  H01L21/208 ,  H01L27/142 ,  H01L31/04 ,  H01L31/06 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L31/20

Abstract: In the manufacture of a solar battery having a structure in which at least two semiconductor thin-films are disposed one over the other between a pair of electrodes, each semiconductor thin-film differing from the other in the impurity concentration thereof and/or the type of semiconductor, the formation of at least one of the semiconductor thin-films comprises a step of coating a liquid coating composition containing a silicon compound so as to form a coating film and a step of converting the coating film into a silicon film by heat treatment and/or light treatment.

公开(公告)号：DE60039744D1

公开(公告)日：2008-09-18

申请号：DE60039744

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： HIMODA TATSUYA ,  MIYASHITA SATORU ,  SEKI SHUNICHI ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  TAKEUCHI YASUMASA ,  MATSUKI YASUO

IPC: H01L21/208 ,  C01B33/02 ,  C30B7/00

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.

公开(公告)号：DE60038931D1

公开(公告)日：2008-07-03

申请号：DE60038931

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SEKI SHUNICHI ,  SHIMODA TATSUYA ,  MIYASHITA SATORU ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: H01L21/208 ,  C01B33/02 ,  C23C18/06 ,  C23C18/08 ,  C23C18/12 ,  H01L21/336 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40

Abstract: An ink composition 11 containing a silicon precursor is selectively discharged into predetermined regions on a substrate from an ink jet head 12 to form a pattern of the silicon precursor, and is subjected to a heat and/or light treatment to convert the silicon precursor into an amorphous silicon film 15 or a polycrystalline silicon film 16. A silicon film pattern is thereby obtained on a large area at low cost with low energy.

公开(公告)号：EP1085579A4

公开(公告)日：2001-12-12

申请号：EP00912947

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： FURUSAWA MASAHIRO ,  SEKI SHUNICHI ,  MIYASHITA SATORU ,  SHIMODA TATSUYA ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: H01L27/142 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/042 ,  H01L21/208

CPC classification number: H01L31/202 ,  H01L31/046 ,  H01L31/077 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: A solar cell has a structure comprising a pair of electrodes between which are interposed at least two thin layers of semiconductor containing different types and/or concentrations of impurity. A process of producing the thin semiconductor layers comprises applying a silicide-containing liquid composition to a substrate to form a coating, and converting the coating to a silicon layer by heat treatment and/or photochemical processing.

公开(公告)号：EP1085560A4

公开(公告)日：2005-07-27

申请号：EP00912946

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SHIMODA TATSUYA ,  MIYASHITA SATORU ,  SEKI SHUNICHI ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  TAKEUCHI YASUMASA ,  MATSUKI YASUO

IPC: C30B7/00 ,  H01L21/208 ,  C01B33/02

CPC classification number: H01L21/0242 ,  C30B7/00 ,  C30B7/005 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02628 ,  H01L21/02675

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.

Abstract translation: 将含有不含碳的环状硅烷化合物和/或通过硼或磷改性的硅烷化合物的溶液施加到基板上，形成硅前体膜，然后通过加热将膜转变成半导体硅， /或轻度处理。 因此，与CVD方法中的真空处理不同，可以以低成本容易地制造具有作为电子材料的令人满意的特性的硅膜。

公开(公告)号：EP1087428A4

公开(公告)日：2005-07-27

申请号：EP00912945

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SEKI SHUNICHI ,  SHIMODA TATSUYA ,  MIYASHITA SATORU ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: C23C18/06 ,  C23C18/08 ,  C23C18/12 ,  H01L21/208 ,  H01L21/336 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40 ,  C01B33/02

CPC classification number: C23C18/06 ,  C08G77/60 ,  C09D183/16 ,  C23C18/08 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02636 ,  H01L29/6675 ,  H01L51/0005 ,  Y02P20/582

Abstract: A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.

Abstract translation: 含有硅前体的油墨组合物11被选择性地放电到预定区域上的衬底从喷墨头12，以形成硅前体的图案，并且经受一个热和/或光处理以将硅前体转化成在 非晶硅膜-15或多晶硅膜16的有机硅膜图案以低成本且低能量由此获得在大面积上。

公开(公告)号：JP2013048109A

公开(公告)日：2013-03-07

申请号：JP2012238717

申请日：2012-10-30

Applicant: Seiko Epson Corp ,  セイコーエプソン株式会社

Inventor： NAKANISHI HAYATO ,  KURIBAYASHI MITSURU ,  FURUSAWA MASAHIRO ,  HIRAI TOSHIMITSU

IPC: H05B33/10 ,  H01L51/50 ,  H05B33/06

Abstract: PROBLEM TO BE SOLVED: To provide an electro-optical device that prevents an occurrence of a failure such as a reduction in contrast in display while being capable of eliminating non-uniformity of electrical resistance in a fixing portion by making compression-bonding conditions between a display substrate and a relay substrate uniform over the entire fixing portion, and further to provide an electronic apparatus provided with the electro-optical device.SOLUTION: Planarizing films 80 are formed between electrodes such as electrodes 74 and 75 connected to wiring formed on a relay substrate such as a flexible substrate. First interlayer insulation layers 284 are formed on the planarizing films 80 and at end portions of the electrodes 74 and 75. Further, transparent electrodes 77 are formed on the electrodes 74 and 75 and on protruding portions 79.

Abstract translation: 要解决的问题：提供一种电光装置，其能够通过进行压接而能够消除定影部中的电阻的不均匀性，从而防止出现显示对比度降低等故障 显示基板和中继基板之间的状态在整个固定部分上均匀，并且还提供设置有电光装置的电子设备。 解决方案：平面化膜80形成在诸如电极74和75的电极之间，电极74和75连接到形成在诸如柔性基板的继电基板上的布线。 第一层间绝缘层284形成在平坦化膜80上和电极74和75的端部。此外，透明电极77形成在电极74和75以及突出部分79上。（C） 2013年，JPO＆INPIT

公开(公告)号：JP2011176225A

公开(公告)日：2011-09-08

申请号：JP2010040607

申请日：2010-02-25

Applicant: Seiko Epson Corp ,  セイコーエプソン株式会社

Inventor： FURUSAWA MASAHIRO

IPC: H01L31/04

CPC classification number: H01L31/0745 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/0747 ,  Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide, for example, an optical conversion device wherein the selection range for a material of a layer including quantum dots is widened.
SOLUTION: An optical conversion device of one embodiment includes a first conductivity-type substrate (p-type single crystalline silicon substrate 100); a first intermediate layer (i-type semiconductor layer 110 or a dielectric layer 160); and a second conductivity-type semiconductor layer (n-type semiconductor layer 120). The first intermediate layer (i-type semiconductor layer 110 or dielectric layer 160) includes quantum dots (nanoparticles) having at least cores. The first conductivity-type substrate is formed of a crystalline semiconductor, such as, single crystalline silicon.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供例如光学转换装置，其中包括量子点的层的材料的选择范围变宽。 解决方案：一个实施例的光转换装置包括第一导电型衬底（p型单晶硅衬底100）; 第一中间层（i型半导体层110或介电层160）; 和第二导电型半导体层（n型半导体层120）。 第一中间层（i型半导体层110或电介质层160）包括至少具有芯的量子点（纳米颗粒）。 第一导电型衬底由诸如单晶硅的晶体半导体形成。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011114258A

公开(公告)日：2011-06-09

申请号：JP2009271230

申请日：2009-11-30

Applicant: Seiko Epson Corp ,  セイコーエプソン株式会社

Inventor： UMETSU KAZUNARI ,  YAMAZAKI YUTAKA ,  FURUSAWA MASAHIRO

IPC: H01L31/04

CPC classification number: Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of enhancing light absorption efficiency and lowering manufacturing costs. SOLUTION: The photoelectric conversion device has a light receiving hole 3 bored in a light receiving surface of a single-crystal silicon substrate 1, the light receiving hole 3 including a bottom portion having two bottom surfaces 81, 82. Then, the light receiving hole 3 has a minimum depth of and an maximum length of an opening of the light receiving hole 3, and tilt angles of the bottom surfaces 81, 82 of the bottom portion thereof set so that light entering the light receiving hole 3 is reflected at least twice in the light receiving hole 3. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够提高光吸收效率并降低制造成本的光电转换装置。 解决方案：光电转换装置具有在单晶硅衬底1的光接收表面上钻孔的光接收孔3，光接收孔3包括具有两个底表面81,82的底部。然后， 光接收孔3具有光接收孔3的开口的最小深度和最大长度，并且其底部的底表面81,82的倾斜角被设置为使得进入光接收孔3的光被反射 在光接收孔3中至少两次。（C）2011，JPO＆INPIT

公开(公告)号：JP2010206004A

公开(公告)日：2010-09-16

申请号：JP2009050922

申请日：2009-03-04

Applicant: Seiko Epson Corp ,  セイコーエプソン株式会社

Inventor： FURUSAWA MASAHIRO

IPC: H01L31/04

CPC classification number: H01L31/035218 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02592 ,  H01L21/02601 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/0384 ,  H01L31/075 ,  Y02E10/548 ,  Y10S977/774 ,  Y10S977/948

Abstract: PROBLEM TO BE SOLVED: To improve characteristics of photoelectric converters by nanoparticles (quantum dots), where granular core parts are covered with shell parts. SOLUTION: The photoelectric converter includes a photoelectric conversion layer (7), where a plurality of nanoparticles (d) are contained in a first material (7a) in a dispersion state. In the photoelectric converter, the nanoparticles (d) include a second granular material (c) and a third material (s) for covering the second material (c). A band gap E3 of the third material (s) is larger than a gap E1 of the first material (7a), and is larger than a band gap E2 of the second granular material (c). By this configuration, a quantum well is formed by the band gap of the third material covering the second material, and charge in the quantum well can be taken out easily by tunneling the third material, and hence achieving the photoelectric converter having high photoelectric conversion efficiency. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提高纳米粒子（量子点）的光电转换器的特性，其中粒状芯部分被外壳部件覆盖。 解决方案：光电转换器包括光电转换层（7），其中多个纳米颗粒（d）以分散状态包含在第一材料（7a）中。 在光电转换器中，纳米颗粒（d）包括用于覆盖第二材料（c）的第二颗粒材料（c）和第三材料。 第三材料的带隙E3大于第一材料（7a）的间隙E1，并且大于第二颗粒材料（c）的带隙E2。 通过这种结构，通过覆盖第二材料的第三材料的带隙形成量子阱，通过隧道化第三材料可以容易地取出量子阱中的电荷，从而实现具有高光电转换效率的光电转换器 。 版权所有（C）2010，JPO＆INPIT