公开(公告)号：US10483387B2

公开(公告)日：2019-11-19

申请号：US15464609

申请日：2017-03-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US10224408B2

公开(公告)日：2019-03-05

申请号：US15601128

申请日：2017-05-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/38 ,  H01L29/45 ,  H01L29/20 ,  H01L21/285 ,  H01L29/417 ,  H01L29/778

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

公开(公告)号：US20170318632A1

公开(公告)日：2017-11-02

申请号：US15492351

申请日：2017-04-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H05B33/08 ,  H01L25/16 ,  H01L33/60

CPC classification number: H05B33/0809 ,  H01L25/167 ,  H01L33/60 ,  H05B33/0845

Abstract: A solid-state light source (SSLS) with an integrated electronic modulator is described. A device can include a SSLS having an active p-n junction region is formed within the SSLS for electron-hole pair recombination and light emission. the active p-n junction region can include a n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A pair of current supply electrodes can be formed to receive a drive current from a current supply source that drives the SSLS. A field-effect transistor (FET) modulator can be monolithically integrated with the SSLS for modulation thereof. The FET modulator can receive a modulation voltage from a modulation voltage source. The modulation voltage includes voltage pulses having a pulse amplitude and polarity to turn on and off current flowing through the FET modulator. These voltage pulses enable the FET modulator to control the drive current supplied to the SSLS.

公开(公告)号：US09741802B2

公开(公告)日：2017-08-22

申请号：US14979915

申请日：2015-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L29/40 ,  G06F17/50 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20

CPC classification number: H01L29/408 ,  G06F17/5068 ,  G06F17/5072 ,  G06F2217/02 ,  G06F2217/78 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/7786 ,  H01L29/872

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.

公开(公告)号：US09673285B2

公开(公告)日：2017-06-06

申请号：US14576303

申请日：2014-12-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/205 ,  G06F17/50 ,  H01L29/40 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/205 ,  G06F17/5068 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/7786

Abstract: A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.

公开(公告)号：US09660043B2

公开(公告)日：2017-05-23

申请号：US14636546

申请日：2015-03-03

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/45 ,  H01L29/20 ,  H01L21/285 ,  H01L29/417 ,  H01L33/38 ,  H01L29/778

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7787 ,  H01L33/382 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

公开(公告)号：US20170117437A1

公开(公告)日：2017-04-27

申请号：US15331895

申请日：2016-10-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/64 ,  H01L33/62 ,  H01L33/32 ,  H01L33/40

Abstract: An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

公开(公告)号：US20160359031A1

公开(公告)日：2016-12-08

申请号：US15137772

申请日：2016-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/06 ,  H01L23/66

CPC classification number: H01L29/7787 ,  H01H59/0009 ,  H01H2001/0078 ,  H01L23/66 ,  H01L27/0605 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/8605 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19032 ,  H01L2924/19051 ,  H01L2924/3011 ,  H01P1/15 ,  H01L2924/00

Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.

Abstract translation: 开关包括输入触点和与导电通道的输出触点。 输入和输出触点中的至少一个电容耦合到导电沟道。 控制触点位于输入和输出触点之间的区域之外，可用于在开关状态之间调整开关。 该开关可以实现为电路中的射频开关。

公开(公告)号：US09349848B2

公开(公告)日：2016-05-24

申请号：US14082998

申请日：2013-11-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/06 ,  H01L29/772 ,  H01L23/66 ,  H01L27/06 ,  H01L29/8605 ,  H01P1/15 ,  H01H59/00 ,  H01H1/00 ,  H01L29/20

CPC classification number: H01L29/772 ,  H01H59/0009 ,  H01H2001/0078 ,  H01L23/66 ,  H01L27/0605 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8605 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19032 ,  H01L2924/19051 ,  H01L2924/3011 ,  H01P1/15 ,  H01L2924/00

Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.

公开(公告)号：US09312347B2

公开(公告)日：2016-04-12

申请号：US14576310

申请日：2014-12-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/404 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/42368 ,  H01L29/7786 ,  H01L29/872

Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.