公开(公告)号：DE3502778A1

公开(公告)日：1985-08-08

申请号：DE3502778

申请日：1985-01-28

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINARI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBARA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  H01L21/208 ,  H01L21/324

Abstract: A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.

公开(公告)号：GB2153253B

公开(公告)日：1987-05-28

申请号：GB8501877

申请日：1985-01-25

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  H01L21/324 ,  C30B11/00 ,  C30B11/14

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.

公开(公告)号：DE3502757C2

公开(公告)日：1995-05-18

申请号：DE3502757

申请日：1985-01-28

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSU ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  C30B13/28 ,  C30B13/06 ,  H01L21/208 ,  H01J37/305

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.

公开(公告)号：GB2153252A

公开(公告)日：1985-08-21

申请号：GB8501876

申请日：1985-01-25

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  C30B19/00

Abstract: A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.

公开(公告)号：GB2153253A

公开(公告)日：1985-08-21

申请号：GB8501877

申请日：1985-01-25

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  H01L21/324 ,  C30B11/00 ,  C30B11/14

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.

公开(公告)号：DE3502789A1

公开(公告)日：1985-08-08

申请号：DE3502789

申请日：1985-01-28

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINARI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZUI

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  H01L21/324 ,  C30B13/28 ,  C30B13/16 ,  C30B35/00

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.

公开(公告)号：GB2153252B

公开(公告)日：1987-09-03

申请号：GB8501876

申请日：1985-01-25

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  C30B19/00

Abstract: A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.

公开(公告)号：GB2153700B

公开(公告)日：1987-05-13

申请号：GB8501878

申请日：1985-01-25

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  C30B11/00 ,  H01J37/305

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.

公开(公告)号：GB2153700A

公开(公告)日：1985-08-29

申请号：GB8501878

申请日：1985-01-25

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSUO ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  C30B11/00 ,  H01J37/305

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.

公开(公告)号：DE3502757A1

公开(公告)日：1985-08-08

申请号：DE3502757

申请日：1985-01-28

Applicant: SONY CORP

Inventor： HAYAFUJI YOSHINORI ,  SAWADA AKASHI ,  USUI SETSU ,  SHIBATA AKIKAZU

IPC: C30B13/22 ,  C30B13/34 ,  H01L21/20 ,  H01L21/263 ,  C30B13/28 ,  H01L21/208 ,  H01L21/324 ,  H01J37/305

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.