公开(公告)号：FI20236003A1

公开(公告)日：2025-03-08

申请号：FI20236003

申请日：2023-09-07

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS

IPC: H03H9/05 ,  H03H9/17 ,  H03H9/70

Abstract: There is provided multi-layer structure for a bulk acoustic wave resonator, comprising: a piezoelectric layer; a first top electrode layer above the piezoelectric layer; a first bottom electrode layer below the piezoelectric layer; a second top electrode layer above the first top electrode layer; a second bottom electrode layer below the first bottom electrode layer; a third top electrode layer above the second top electrode layer; and a third bottom electrode layer below the second bottom electrode layer. The first top electrode layer and first the bottom electrode layer are configured to form acoustic confinement layers, and the second top electrode layer and the third top electrode layer are configured to form a first acoustically free surface towards the first top electrode layer, and the second bottom electrode layer and the third bottom electrode layer are configured to form a second acoustically free surface towards the first bottom electrode layer.

公开(公告)号：ES2582328T3

公开(公告)日：2016-09-12

申请号：ES12786090

申请日：2012-05-11

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

IPC: H03H9/02 ,  B81B3/00 ,  H03H9/24

Abstract: Un dispositivo micromecánico que comprende - un elemento semiconductor que puede desviarse o resonar y que comprende al menos dos regiones que tienen diferentes propiedades de material, y - medios de impulso o detección acoplados funcionalmente a dicho elemento semiconductor, - al menos una de dichas regiones comprende uno o más agentes de dopaje tipo-n, - en volúmenes relativos, concentraciones de dopaje, agentes de dopaje y/u orientaciones de cristal de las regiones se configuran de modo que - las sensibilidades a temperatura de la rigidez generalizada son de signo opuesto al menos a una temperatura para las regiones, y - la deriva de temperatura total de la rigidez generalizada del elemento semiconductor es 50 ppm o menos en un intervalo de temperaturas de 100 °C, caracterizado por que la al menos una primera región y al menos una segunda región son regiones distintas que comprenden diferentes concentraciones de dopaje del uno o más agentes de dopaje tipo-n.

公开(公告)号：FI20115151A

公开(公告)日：2012-08-18

申请号：FI20115151

申请日：2011-02-17

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS ,  JAAKKOLA ANTTI ,  GANCHENKOVA MARIA ,  PRUNNILA MIKA ,  KIIHAMAEKI JYRKI

IPC: H03H9/02 ,  B81B3/00 ,  H03H3/007

公开(公告)号：FI20115151A0

公开(公告)日：2011-02-17

申请号：FI20115151

申请日：2011-02-17

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS ,  JAAKKOLA ANTTI ,  GANCHENKOVA MARIA ,  PRUNNILA MIKA ,  KIIHAMAEKI JYRKI

IPC: H01L20060101

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

公开(公告)号：FI126586B

公开(公告)日：2017-02-28

申请号：FI20115151

申请日：2011-02-17

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS ,  JAAKKOLA ANTTI ,  GANCHENKOVA MARIA ,  PRUNNILA MIKA ,  KIIHAMÄKI JYRKI

IPC: B81B3/00 ,  H01L41/18 ,  H03H3/007 ,  H03H9/02 ,  H03H9/24

公开(公告)号：FI20115465A

公开(公告)日：2012-11-14

申请号：FI20115465

申请日：2011-05-13

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

公开(公告)号：FI127940B

公开(公告)日：2019-05-31

申请号：FI20165556

申请日：2016-07-01

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： JAAKKOLA ANTTI ,  PENSALA TUOMAS ,  OJA AARNE ,  PEKKO PANU ,  DEKKER JAMES R

IPC: H03H3/013 ,  B81B3/00 ,  H01L41/08 ,  H03H9/02

Abstract: The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions in the plane of the resonator element, wherein the at least two regions have different thicknesses.

公开(公告)号：FI123640B

公开(公告)日：2013-08-30

申请号：FI20105443

申请日：2010-04-23

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： MELTAUS JOHANNA ,  PENSALA TUOMAS

IPC: H03H9/205 ,  H03H9/00 ,  H03H9/02

公开(公告)号：FI20116113A

公开(公告)日：2013-05-12

申请号：FI20116113

申请日：2011-11-11

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： MELTAUS JOHANNA ,  PENSALA TUOMAS

Abstract: The invention relates to a laterally coupled bulk acoustic wave (LBAW) filter comprising a vibration layer for carrying bulk acoustic waves, electrode means comprising a first electrode coupled to the vibration layer for exciting to the vibration layer at least one longitudinal wave mode having a first frequency band and one shear wave mode having a second frequency band, and a second electrode coupled to the vibration layer for sensing the filter pass signal, the first and second electrodes being laterally arranged with respect to each other, and an acoustic reflector structure in acoustic connection with the vibration layer. According to the invention, the reflector structure is adapted to acoustically isolate the vibration layer from its surroundings at the first frequency band more efficiently than at the second frequency band for suppressing the effect of the shear wave mode at the second frequency band from the filter pass signal. The invention helps to improve the quality of LBAW filter passbands.

公开(公告)号：FI131267B1

公开(公告)日：2025-01-15

申请号：FI20225530

申请日：2022-06-14

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS

IPC: G01N29/02 ,  G01N29/036 ,  G01N29/24 ,  H03H9/02 ,  H03H9/17

Abstract: An acoustic wave resonator comprising a piezoelectric layer (31) and a drive electrode (321) and a counter-electrode (322) connected to the piezoelectric layer (31). The counter- electrode is adjacent to the drive electrode and the counter-electrode and the drive5 electrode together delimit a resonance region (391-392) in the piezoelectric layer. The piezoelectric layer is made of a single-crystal piezoelectric material.