公开(公告)号：JP2012253192A

公开(公告)日：2012-12-20

申请号：JP2011124541

申请日：2011-06-02

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUJII AKISUKE ,  YAMAUCHI TAKASHI ,  MIYAGAWA HIDENORI

IPC: H01L27/105 ,  H01L45/00 ,  H01L49/00

CPC classification number: H01L45/1253 ,  H01L45/085 ,  H01L45/12 ,  H01L45/148

Abstract: PROBLEM TO BE SOLVED: To provide a non-volatile resistance change element having a highly reliable rectification function.SOLUTION: A non-volatile resistance change element includes: an upper electrode 1 including at least one of Ag, Ni, Co, Al, Zn, Ti and Cu; a lower electrode 2; a resistance change layer 3 sandwiched between the upper electrode 1 and the lower electrode 2; and a rectification function layer 4 arranged between the lower electrode 2 and the resistance change layer 3 and including an element constituting the resistance change layer 3 and at least one element of Ag, Ni and Co. The electrical resistance between the upper electrode 1 and the lower electrode 2 reversibly changes in accordance with a voltage applied between the upper electrode 1 and the lower electrode 2.

Abstract translation: 要解决的问题：提供具有高可靠性整流功能的非易失性电阻变化元件。 解决方案：非易失性电阻变化元件包括：上电极1，其包括Ag，Ni，Co，Al，Zn，Ti和Cu中的至少一种; 下电极2; 夹在上电极1和下电极2之间的电阻变化层3; 以及布置在下电极2和电阻变化层3之间并且包括构成电阻变化层3的元件和Ag，Ni和Co的至少一种元素的整流功能层4.上电极1和 下电极2根据施加在上电极1和下电极2之间的电压而可逆地变化。版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012199441A

公开(公告)日：2012-10-18

申请号：JP2011063353

申请日：2011-03-22

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TAKASHIMA AKIRA ,  MATSUSHITA DAISUKE ,  YAMAUCHI TAKASHI ,  MIYAGAWA HIDENORI ,  KAMIMUTA YUICHI

IPC: H01L27/105 ,  H01L27/10 ,  H01L45/00 ,  H01L49/00

CPC classification number: H01L45/04 ,  G11C11/56 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/33 ,  G11C2213/52 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/148

Abstract: PROBLEM TO BE SOLVED: To reduce an operating voltage of a memory device in which amorphous silicon is used for a memory unit, and to form the memory device by a low-temperature process.SOLUTION: The memory device according to an embodiment comprises: a first electrode EL1 including a crystallized SiGe(0≤x

Abstract translation: 要解决的问题：为了降低将非晶硅用于存储单元的存储器件的工作电压，并通过低温工艺形成存储器件。 解决方案：根据实施例的存储器件包括：包括结晶化的Si 1 的第一电极EL1 （0≤x<1）层; 含有金属元素的第二电极EL2; 设置在第一和第二电极EL1和EL2之间并包括非晶Si层的可变电阻单元VR; 以及用于控制在非晶Si层中含有金属元素的长丝的长度的控制电路。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2009141214A

公开(公告)日：2009-06-25

申请号：JP2007317504

申请日：2007-12-07

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： MARUGAME TAKAO ,  YAMAUCHI TAKASHI ,  NISHI YOSHIFUMI ,  TSUCHIYA YOSHINORI ,  KATO KOICHI

IPC: H01L21/336 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/417 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has small parasitic resistance of a source/drain region, and to provide a method of manufacturing the same.
SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a gate portion on an Si layer; introducing As into the Si layer located across the gate portion; depositing an Ni layer on the Si layer into which As is introduced; allowing the Ni layer to react with the Si layer using a heat treatment to form a first silicide layer and segregating As on the interface between the first silicide layer and Si layer; introducing Pt elements into the first silicide layer; and diffusing the Pt elements up to the Si layer by using a heat treatment to form a second silicide layer between the first silicide layer and Si layer and also segregating As on the interface of the second silicide layer and Si layer.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有小的源/漏区的寄生电阻的半导体器件，并提供其制造方法。 解决方案：制造半导体器件的方法包括以下步骤：在Si层上形成栅极部分; 将As引入位于栅极部分的Si层; 在引入As的Si层上沉积Ni层; 允许Ni层通过热处理与Si层反应以形成第一硅化物层并且在第一硅化物层和Si层之间的界面上分离As; 将Pt元素引入到第一硅化物层中; 并通过热处理将Pt元素扩散到Si层，以在第一硅化物层和Si层之间形成第二硅化物层，并且还在第二硅化物层和Si层的界面上分离出As。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009140934A

公开(公告)日：2009-06-25

申请号：JP2009009379

申请日：2009-01-19

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： AKITA MASATO ,  YAMAUCHI TAKASHI ,  TAKASHITA MASAHIRO ,  SAKAGAMI HIDEKAZU ,  MATSUOKA TAKASHI

IPC: H01M8/02 ,  H01M8/00 ,  H01M8/04 ,  H01M8/10 ,  H01M8/24

CPC classification number: H01M8/0263 ,  H01M8/0258 ,  H01M8/04186 ,  H01M8/1011 ,  H01M8/241 ,  H01M8/2455 ,  H01M8/2483 ,  Y02E60/523

Abstract: PROBLEM TO BE SOLVED: To provide a direct methanol fuel cell power generator capable of decreasing an imbalance in output every electromotive portion units and stably supplying fuel in the direct methanol fuel cell power generator composed of a plurality of electromotive portions. SOLUTION: The direct fuel cell power generator is equipped with at least two electromotive portion units 108a, 108b each including an anode having an anode catalyst layer, a cathode having a cathode catalyst layer, and electrolyte membrane disposed between the anode and the cathode; a fuel container housing fuel; and a fuel passage 103 for supplying fuel to the electromotive portion units 108a, 108b. In the power generator, the fuel passage 103 has a passage which produces flow-back again from the fuel container to the first electromotive portion unit via the first electromotive portion unit 108a and the second electromotive portion 108b, and which is not branched during the flow-back. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供一种直接甲醇燃料电池发电机，其能够减少每个电动部分单元的输出不平衡，并且在由多个电动部分组成的直接甲醇燃料电池发电机中稳定地供应燃料。 解决方案：直接燃料电池发电机配备有至少两个电动部分单元108a，108b，每个电动部分单元108a，108b包括具有阳极催化剂层的阳极，具有阴极催化剂层的阴极和设置在阳极和阳极之间的电解质膜 阴极; 容纳燃料的燃料容器; 以及用于向电动部分单元108a，108b供应燃料的燃料通道103。 在发电机中，燃料通路103具有通过第一电动部分单元108a和第二电动部分108b从燃料容器再次回流到第一电动部分单元的通道，并且在流动期间不分支 -背部。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009130190A

公开(公告)日：2009-06-11

申请号：JP2007304572

申请日：2007-11-26

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： YAMAUCHI TAKASHI ,  NISHI YOSHIFUMI ,  TSUCHIYA YOSHINORI ,  KOGA JUNJI ,  KATO KOICHI

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/417

CPC classification number: H01L29/7833 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823814 ,  H01L29/665

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having a p-type MISFET or an n-type MISEFET and its manufacturing method, capable of reducing source-drain electrode interface resistance of the p-type MISFET or the n-type MISEFET.
SOLUTION: The semiconductor device includes the p-type MISFET 200 on a semiconductor substrate 100. The p-type MISFET 200 includes a channel region 204 in the semiconductor substrate 100, a gate insulating film 206 formed on the channel region 204, a gate electrode 208 formed on the gate insulating film 206, source-drain electrodes which are silicide layers 210 containing Ni on both sides of the channel region 204, and interface layers 230 formed on a semiconductor substrate 100 side of an interface of the source-drain electrode and the semiconductor substrate 100, and containing Mg, Ca, or Ba.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有p型MISFET或n型MISEFET的半导体器件及其制造方法，能够减小p型MISFET或n型MISFET的源极 - 漏极电极界面电阻 MISEFET。 解决方案：半导体器件在半导体衬底100上包括p型MISFET 200.P型MISFET 200包括半导体衬底100中的沟道区204，形成在沟道区204上的栅极绝缘膜206， 形成在栅极绝缘膜206上的栅电极208，作为沟道区域204的两侧含有Ni的硅化物层210的源极 - 漏极电极以及形成在源极 - 漏极的界面的半导体基板100侧的界面层230， 漏电极和半导体衬底100，并且含有Mg，Ca或Ba。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005183014A

公开(公告)日：2005-07-07

申请号：JP2003417647

申请日：2003-12-16

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： AKITA MASATO ,  MIYAZAKI KANAME ,  YAMAUCHI TAKASHI ,  MATSUOKA TAKASHI

IPC: H01M8/04

CPC classification number: Y02E60/523

Abstract: PROBLEM TO BE SOLVED: To provide a harmful substance removal filter for direct type liquid fuel batteries which cleanses harmful substances produced and ejected in power generation by a direct type liquid fuel battery generator, without increasing the output of an auxiliary apparatus of the direct type liquid fuel battery generator. SOLUTION: The harmful substance removal filter for direct type fuel battery generators is for removing harmful substances contained in ejected substances from electrodes, and is equipped with a liquid-gas separating member 5 for making gas components in the ejected substances penetrate selectively, and a catalyst portion 3 for oxidizing and burning the gas components having penetrated the separating member 5. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于直接型液体燃料电池的有害物质去除过滤器，其用于通过直接型液体燃料电池发电机清洁在发电中产生和排出的有害物质，而不增加辅助设备的输出 直接型液体燃料电池发电机。 解决方案：用于直接型燃料电池发生器的有害物质去除过滤器用于从电极中除去喷射物质中含有的有害物质，并且配备有用于使喷射物质中的气体成分选择性地渗透的液体气体分离部件5， 和催化剂部分3，用于氧化和燃烧已渗入分离部件5的气体成分。（C）2005年，JPO＆NCIPI

公开(公告)号：JP2004265787A

公开(公告)日：2004-09-24

申请号：JP2003056191

申请日：2003-03-03

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： MIYAMOTO HIROHISA ,  SHIBUYA NOBUO ,  TOMIMATSU NORIHIRO ,  SUMINO HIROYASU ,  AKITA MASATO ,  SAKAGAMI HIDEKAZU ,  SADAMOTO ATSUSHI ,  MATSUOKA TAKASHI ,  HIRASAWA HIROAKI ,  YAMAUCHI TAKASHI ,  HARADA YASUHIRO ,  KUDO AKIRA

IPC: H01M8/00 ,  H01M8/04 ,  H01M8/10

CPC classification number: Y02E60/523

Abstract: PROBLEM TO BE SOLVED: To provide a direct methanol fuel cell system capable of supplying electric power to a load stably for a long period of time.
SOLUTION: The direct methanol fuel cell system comprises a stack cell 11 for generating an electromotive force through a chemical reaction of methanol solution supplied to an anode side and air supplied to a cathode side, a mixing tank 14 for mixing methanol and water to generate methanol solution, a first liquid feeding pump 13 for feeding the methanol inside a fuel cartridge 12 to the mixing tank 14, a heat exchanger 20 for heating and supplying the methanol solution from the mixing tank 14 to the anode and for cooling the methanol solution discharged from the anode, a second liquid feeding pump 19 deployed between the mixing tank 14 and the heat exchanger 20, an air feeding pump 22 for discharging air from the cathode, and a cooler 15 for cooling the air discharged from the air feeding pump 22 to supply water to the mixing tank 14.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004208344A

公开(公告)日：2004-07-22

申请号：JP2002371264

申请日：2002-12-24

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TOYODA TAKEHIKO ,  YOSHIDA HIROSHI ,  SUMINO HIROYASU ,  MIYAMOTO HIROHISA ,  YAMAUCHI TAKASHI

IPC: H02J7/00 ,  H01M8/00 ,  H01M10/44 ,  H01M10/48 ,  H02J7/34 ,  H04M1/73

CPC classification number: Y02D70/00

Abstract: PROBLEM TO BE SOLVED: To provide a portable terminal having a plurality of batteries, which improves energy efficiency by enabling a long time of driving while keeping the downsizing of a battery for driving itself.
SOLUTION: A power source 101 and a power source 151 are independent batteries stored in the portable terminal 100. The battery 101 supplies voltage only to its first functional circuit 102 which requires temporally constant current consumption. Likewise, the battery 151 supplies voltage only to its second functional circuit 152 which requires temporally changing current consumption. For the battery 101, a battery suitable to a temporally large current output is used, and for the battery 151, a battery suitable to the output of a temporally changing current is used.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2010056437A

公开(公告)日：2010-03-11

申请号：JP2008222152

申请日：2008-08-29

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NISHI YOSHIFUMI ,  TSUCHIYA YOSHINORI ,  YAMAUCHI TAKASHI ,  KOGA JUNJI

IPC: H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a high performance semiconductor device, which forms an electrode by utilizing a reaction between fine metal particles and a semiconductor substrate, and to provide a high performance semiconductor device which has an electrode having a small grain particle size. SOLUTION: The method of manufacturing a semiconductor device includes: a step of applying a solution wherein fine metal particles having a diameter of ≤20 nm are dispersed in a solvent, onto the semiconductor substrate; a step of evaporating the solvent; and a step of forming a metal-semiconductor compound thin film on a surface of the semiconductor substrate by causing the reaction between the fine metal particles and the semiconductor substrate. The semiconductor substrate has the metal-semiconductor compound thin film on the semiconductor substrate, and the metal-semiconductor compound thin film is formed of single grains in a film thickness direction, and a particle size of the single grains is ≤40 nm. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过利用金属微粒和半导体衬底之间的反应形成电极的高性能半导体器件的制造方法，并提供具有电极的高性能半导体器件 颗粒粒度小。 解决方案：制造半导体器件的方法包括：将其中直径为≤20nm的细金属颗粒分散在溶剂中的溶液施加到半导体衬底上的步骤; 蒸发溶剂的步骤; 以及通过使金属微粒与半导体衬底之间的反应而在半导体衬底的表面上形成金属 - 半导体化合物薄膜的步骤。 半导体衬底在半导体衬底上具有金属 - 半导体化合物薄膜，并且金属 - 半导体化合物薄膜在膜厚度方向上由单个晶粒形成，并且单个晶粒的粒径≤40nm。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009135227A

公开(公告)日：2009-06-18

申请号：JP2007309267

申请日：2007-11-29

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NISHI YOSHIFUMI ,  TSUCHIYA YOSHINORI ,  YAMAUCHI TAKASHI ,  KOGA JUNJI

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417

CPC classification number: H01L29/4975 ,  H01L21/26506 ,  H01L21/28097 ,  H01L21/28518 ,  H01L21/28537 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L23/485 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device improved in performance by reduction in contact resistance of an electrode, and also to provide a semiconductor device. SOLUTION: The semiconductor device manufacturing method has steps of: forming a gate insulating film on a semiconductor substrate; forming a gate electrode on the gate insulating film; depositing a first metal on the semiconductor substrate; forming each metal semiconductor compound layer on each surface of the semiconductor substrate on both sides of the gate electrode by reacting the first metal with the semiconductor substrate by first heat treatment; implanting ions having a mass exceeding the atomic weight of Si into each metal semiconductor compound layer; depositing a second metal on each metal semiconductor compound layer; and diffusing the second metal throughout each metal semiconductor compound layer by second heat treatment so as to form an interface layer on the interface between each metal semiconductor compound layer and the semiconductor substrate by segregating the second metal. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供通过降低电极的接触电阻而提高性能的半导体器件的制造方法，以及提供半导体器件。 解决方案：半导体器件制造方法具有以下步骤：在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 在所述半导体衬底上沉积第一金属; 通过第一热处理使第一金属与半导体衬底反应，在栅电极的两侧在半导体衬底的每个表面上形成每个金属半导体化合物层; 将具有超过Si的原子量的质量的离子注入到每个金属半导体化合物层中; 在每个金属半导体化合物层上沉积第二金属; 并且通过第二次热处理在每个金属半导体化合物层中扩散第二金属，以通过分离第二金属在每个金属半导体化合物层和半导体衬底之间的界面上形成界面层。 版权所有（C）2009，JPO＆INPIT