Abstract:
A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550 °C or higher. Theoretical calculations show that dissociation of NH 3 at this temperature is significant. However, the dissociation of NH 3 is avoided by adding extra N 2 pressure after filling the reaction vessel with NH 3 .
Abstract:
An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.
Abstract:
A data processing apparatus is configured to solve a specific problem using a simple hardware. The data processing apparatus comprises a state data processing unit configured to iterate update of state data by a predetermined time evolutional process, a cost evaluation, unit configured to evaluate a cost function for current state data, and an error calculation unit configured to calculate error values relating to amplitude homogeneity of the current state data, wherein the state data processing unit performs the time evolutional process on the state data to update the current state data based on the cost function and the error values which are calculated by the error calculation unit.
Abstract:
A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or vanadium or less than 1% indium.
Abstract:
A method is herein presented for analyzing nucleobases on a single molecular basis (a single molecule detection), which comprises scanning a molecular tip chemically modified with the complementary nucleobase on the nucleobases, and measuring the tunneling currents between the scanned nucleobases and the molecular tips with scanning tunneling microscopy.
Abstract:
The present invention is directed to a process of making α-aminooxyketone and α-hydroxyketone compounds. The synthetic pathway generally involves reacting an aldehyde or ketone substrate and a nitroso substrate in the presence of a catalyst of formula (IV), wherein X 1 -X 3 represent independently nitrogen, carbon, oxygen or sulfur and Z represents a 4 to 10-membered ring with or without a substituent and optionally a further step to convert the α-aminooxyketone compound formed to the α-hydroxyketone compound. The present invention results in α-aminooxyketone and α-hydroxyketone compounds with high enantioselectivity and high purity. The present invention is also directed to a catalytic asymmetric O-nitroso Aldol / Michael reaction. The substrates of this reaction are generally cyclic α,ß-unsaturated ketone substrate and a nitroso substrate. This methodology generally involves reacting the cyclic α,ß-unsaturated ketone substrate and the nitroso substrate in the presence of a proline-based catalyst, to provide a heterocyclic product.
Abstract:
A fluorinated polymer comprising an unit represented by the following formula (1), a methods for producing fluorinated compounds and the fluorinated polymers, and an optical/electrical material or coating material comprising the fluorinated polymer.
Abstract:
The present invention provides a new metal or metal oxide porous material and a preparation method thereof, and more particularly concerns a new sponge-shaped noble metal, especially a silver porous material that is useful as a catalyst for an organic synthetic reaction such as an epoxidation reaction and partial oxidation reaction, and a functional material for electronic devices, heat dissipation and bacterial filtration and a preparation method thereof, as well as such a new silver catalyst.
Abstract:
A data processing apparatus is configured to solve a specific problem using a simple hardware. The data processing apparatus comprises a state data processing unit configured to iterate update of state data by a predetermined time evolutional process, a cost evaluation unit configured to evaluate a cost function for current state data, and an error calculation unit configured to calculate error values relating to amplitude homogeneity of the current state data, wherein the state data processing unit performs the time evolutional process on the state data to update the current state data based on the cost function and the error values which are calculated by the error calculation unit.
Abstract:
[Technical Problem] The present invention provides an enhancer of cellular immunity, and provides applications to carcinogenesis or preventive therapy against cancer reccurrence, immunotherapy for cancer, treatment for pathogenic microorganism infection, and the like. [Technical Solution] The present invention comprises the substance having an inhibitory activity of histone deacetylase (HDAC) as an active component.