公开(公告)号：US20080185739A1

公开(公告)日：2008-08-07

申请号：US11670962

申请日：2007-02-03

Applicant: Chien-Wei Chang ,  Cheng-Kuo Ma

Inventor： Chien-Wei Chang ,  Cheng-Kuo Ma

IPC: H01L21/58 ,  H01L23/52

CPC classification number: H01L24/83 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/90 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8301 ,  H01L2224/83191 ,  H01L2224/83447 ,  H01L2224/8385 ,  H01L2224/90 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor substrate for having enhanced adhesion to semiconductor device and its manufacturing method are provided. The wire circuit layout on the surface of the semiconductor substrate is of a specialized design and surface treatment for enhanced adhesion between the packaged adhered material and the substrate surface (the bonding pad in particular). In the manufacturing method of the semiconductor substrate, the processing by the passivation treatment or the roughening treatment of the whole or a part of the bonding pad on the substrate, such as the brown-oxide treatment or the black-oxide treatment, etc, and the use of an enlarged contact area act to enhance adhesion to the semiconductor device during the packaging of the semiconductor device.

Abstract translation: 提供了一种用于增强与半导体器件的粘附性的半导体衬底及其制造方法。 在半导体衬底的表面上的电路布线具有专门的设计和表面处理，用于增强封装的粘附材料与衬底表面（特别是焊盘）之间的粘合力。 在半导体衬底的制造方法中，通过钝化处理的处理或对基板上的焊盘的全部或一部分的粗糙化处理，例如棕色氧化物处理或黑色氧化物处理等，以及 在半导体器件的封装期间使用扩大的接触面积用于增强与半导体器件的粘合性。

公开(公告)号：US07405146B2

公开(公告)日：2008-07-29

申请号：US11338376

申请日：2006-01-24

Applicant: Cheng-Kuo Ma

Inventor： Cheng-Kuo Ma

IPC: H01L21/445

CPC classification number: H05K3/243 ,  H05K3/062 ,  H05K3/242 ,  H05K3/28 ,  H05K2201/0352 ,  H05K2203/1476 ,  H05K2203/1581 ,  Y10T29/49124 ,  Y10T29/49165

Abstract: An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer uncovered by the insulating layer formed on the bump side from the electroplated metal layer on the ball side to form the protective layer (the electroplated gold layer) on the portion of the circuit layer. In such a way, the electroplated gold layer cannot be formed under the insulating layer formed on the bump side (attached with the chip) because the electroplated gold layer is formed after the insulating layer has been formed, and thereby the fall-off of the insulating layer from the electroplated gold layer will not happen. Therefore, the reliability of the products is enhanced.

Abstract translation: 提供了通过从球侧传输电流的电镀方法。 在电镀方法中，电路层首先形成在IC板的凸块侧，并且电流被传导到电路层的未被凸起侧形成的绝缘层的电镀层的电镀层上的电镀金属层 球侧，以在电路层的部分上形成保护层（电镀金层）。 以这种方式，由于在形成绝缘层之后形成电镀金层，所以不能在形成在凸块侧（附着芯片）的绝缘层的下方形成电镀金层，从而使电镀金层脱落 绝缘层与电镀金层不会发生。 因此，提高了产品的可靠性。

公开(公告)号：US20080286958A1

公开(公告)日：2008-11-20

申请号：US12185817

申请日：2008-08-05

Applicant: Chien-Wei Chang ,  Cheng-Kuo Ma

Inventor： Chien-Wei Chang ,  Cheng-Kuo Ma

IPC: H01L21/44

CPC classification number: H01L24/83 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/90 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8301 ,  H01L2224/83191 ,  H01L2224/83447 ,  H01L2224/8385 ,  H01L2224/90 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor substrate for having enhanced adhesion to semiconductor device and its manufacturing method are provided. The wire circuit layout on the surface of the semiconductor substrate is of a specialized design and surface treatment for enhanced adhesion between the packaged adhered material and the substrate surface (the bonding pad in particular). In the manufacturing method of the semiconductor substrate, the processing by the passivation treatment or the roughening treatment of the whole or a part of the bonding pad on the substrate, such as the brown-oxide treatment or the black-oxide treatment, etc, and the use of an enlarged contact area act to enhance adhesion to the semiconductor device during the packaging of the semiconductor device.

公开(公告)号：US20070173052A1

公开(公告)日：2007-07-26

申请号：US11338376

申请日：2006-01-24

Applicant: Cheng-Kuo Ma

Inventor： Cheng-Kuo Ma

IPC: H01L21/44 ,  H05K3/00

CPC classification number: H05K3/243 ,  H05K3/062 ,  H05K3/242 ,  H05K3/28 ,  H05K2201/0352 ,  H05K2203/1476 ,  H05K2203/1581 ,  Y10T29/49124 ,  Y10T29/49165

Abstract: An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer uncovered by the insulating layer formed on the bump side from the electroplated metal layer on the ball side to form the protective layer (the electroplated gold layer) on the portion of the circuit layer. In such a way, the electroplated gold layer cannot be formed under the insulating layer formed on the bump side (attached with the chip) because the electroplated gold layer is formed after the insulating layer has been formed, and thereby the fall-off of the insulating layer from the electroplated gold layer will not happen. Therefore, the reliability of the products is enhanced.

Abstract translation: 提供了通过从球侧传输电流的电镀方法。 在电镀方法中，电路层首先形成在IC板的凸块侧，并且电流被传导到电路层的未被凸起侧形成的绝缘层的电镀层的电镀层上的电镀金属层 球侧，以在电路层的部分上形成保护层（电镀金层）。 以这种方式，由于在形成绝缘层之后形成电镀金层，所以不能在形成在凸块侧（附着芯片）的绝缘层的下方形成电镀金层，从而使电镀金层脱落 绝缘层与电镀金层不会发生。 因此，提高了产品的可靠性。