公开(公告)号：US20160046127A1

公开(公告)日：2016-02-18

申请号：US14926567

申请日：2015-10-29

Applicant: NLT Technologies, Ltd.

Inventor： Shigeru MORI ,  Setsuo KANEKO ,  Hideki ASADA

IPC: B41J2/16

CPC classification number: B41J2/1601 ,  B41J2/0455 ,  B41J2/0458 ,  B41J2/14016 ,  B41J2/14129 ,  B41J2/1626 ,  B41J2/1634 ,  B41J2002/14387 ,  B81C1/00357 ,  B81C1/00817 ,  B81C2201/0194 ,  C09K13/00

Abstract: Provided are a manufacturing method of an inkjet print head, the inkjet print head and a drawing apparatus equipped with the inkjet print head. The manufacturing method includes: forming a separation assisting layer on a substrate; forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer; separating the separation assisting layer from the substrate; forming a first heat-conductive layer on the opposite surface of the separation assisting layer from the nozzles; and forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head.

Abstract translation: 提供了一种喷墨打印头，喷墨打印头和装备有喷墨打印头的绘图装置的制造方法。 该制造方法包括：在基板上形成分离辅助层; 在分离辅助层上形成用于喷射液体的加热电阻器，薄膜晶体管和喷嘴; 从所述基板分离所述分离辅助层; 在分离辅助层的相对表面上与喷嘴形成第一导热层; 以及形成用于从喷墨打印头的第一导热层侧向喷嘴供墨的供墨口。

公开(公告)号：US20130221440A1

公开(公告)日：2013-08-29

申请号：US13849971

申请日：2013-03-25

Applicant: NEC Corporation ,  NLT Technologies, Ltd.

Inventor： Shigeru MORI

IPC: H01L23/28 ,  H01L29/78 ,  H01L21/02 ,  H01L29/02

CPC classification number: H01L23/28 ,  H01L21/02365 ,  H01L29/02 ,  H01L29/66757 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.

Abstract translation: 提供一种半导体器件，其中半导体层形成在绝缘基板上，其中插入在半导体层和绝缘基板之间的前端绝缘层，其能够防止绝缘基板中包含的杂质对半导体层的作用 并提高半导体器件的可靠性。 在TFT（薄膜晶体管）中，使硼被包含在距离绝缘基板的表面约100nm以下的区域中，使得硼浓度以平均速率降低约1/1000倍/ 1 从绝缘基板的表面朝向半导体层。