公开(公告)号：US09218979B2

公开(公告)日：2015-12-22

申请号：US14599123

申请日：2015-01-16

Applicant: Phononic Devices, Inc.

Inventor： Jason D. Reed ,  Jaime A. Rumsey ,  Ronald R. Hess ,  Arthur Prejs ,  Ian Patrick Wellenius ,  Allen L. Gray

IPC: H01L31/0224 ,  H01L21/44 ,  H01L21/283 ,  H01L35/02 ,  H01L35/34 ,  H01L21/02 ,  H01L29/66 ,  H01L31/0236 ,  H01L33/22 ,  C23C28/02 ,  H01L35/16

CPC classification number: H01L21/283 ,  C23C28/021 ,  C23C28/023 ,  H01L21/02562 ,  H01L29/66068 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L33/22 ,  H01L35/02 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract translation: 公开了低电阻率欧姆接触的实施例。 在一些实施例中，制造低电阻率欧姆接触的方法包括提供半导体材料层并有意地使半导体材料层变粗糙以产生特征表面粗糙度。 该方法还包括在半导体材料层的表面上提供欧姆接触金属层，并在与半导体材料层相对的欧姆接触金属层的表面上提供扩散阻挡金属层。 以这种方式，可以增加半导体材料层和欧姆接触金属层之间的粘合力。

公开(公告)号：US20170365767A1

公开(公告)日：2017-12-21

申请号：US15628218

申请日：2017-06-20

Applicant: Phononic Devices, Inc.

Inventor： Jesse W. Edwards ,  Devon Newman ,  Arthur Prejs ,  Alex R. Guichard ,  Jason D. Reed ,  Kevin Shawne Schneider ,  Brian Williams ,  Robert J. Therrien

IPC: H01L35/34 ,  H01L35/08 ,  H01L35/10 ,  H01L35/12

CPC classification number: H01L35/34 ,  H01L35/08 ,  H01L35/10 ,  H01L35/12

Abstract: A thermoelectric device with multiple headers and a method of manufacturing such a device are provided herein. In some embodiments, a thermoelectric device includes multiple thermoelectric legs, a cold header thermally attached to the thermoelectric legs, and a hot header thermally attached to the thermoelectric legs opposite the cold header. At least one of the cold header and the hot header includes at least one score line. According to some embodiments disclosed herein, this the thermal stress on the thermoelectric device can be greatly reduced or relieved by splitting the header into multiple pieces or by scoring the header by a depth X. This enables the use of larger thermoelectric devices and/or thermoelectric devices with an increased lifespan.

公开(公告)号：US20160079510A1

公开(公告)日：2016-03-17

申请号：US14865874

申请日：2015-09-25

Applicant: Phononic Devices, Inc.

Inventor： Devon Newman ,  Abhishek Yadav ,  Arthur Prejs ,  Ravi Kiran Chilukuri

IPC: H01L35/32

CPC classification number: H01L35/325

Abstract: Embodiments described herein include a cascade Thermoelectric Module (TEM) that includes at least three headers. A first header and a first surface of a second header electrically connect first legs to form a stage of thermoelectric devices electrically connected in series, and define first and second leg placement positions for a subset of the first legs. A second surface of the second header and a third header electrically connect second legs to form another stage of thermoelectric devices electrically connected in series, and define first and second leg placement positions for a subset of the second legs. The stages are electrically coupled in series when the subsets of the first and second legs are positioned in their respective first leg placement positions, and the stages are electrically decoupled when the subsets of the first and second legs are positioned in their respective second leg placement positions.

Abstract translation: 本文描述的实施例包括级联热电模块（TEM），其包括至少三个集管。 第一集管和第二集管的第一表面电连接第一支腿以形成串联电连接的热电装置的平台，并且限定第一支腿的子集的第一和第二支脚放置位置。 第二集管的第二表面和第三集管电连接第二支腿以形成串联电连接的另一级的热电装置，并且限定第二支路的子集的第一和第二支脚放置位置。 当第一和第二腿的子集位于它们各自的第一腿放置位置时，这些级串联电耦合，并且当第一和第二腿的子集位于它们各自的第二腿放置位置时，这些级电耦合 。

公开(公告)号：US20150200098A1

公开(公告)日：2015-07-16

申请号：US14599123

申请日：2015-01-16

Applicant: Phononic Devices, Inc.

Inventor： Jason D. Reed ,  Jaime A. Rumsey ,  Ronald R. Hess ,  Arthur Prejs ,  Ian Patrick Wellenius ,  Allen L. Gray

IPC: H01L21/283 ,  H01L35/34 ,  H01L35/02

CPC classification number: H01L21/283 ,  C23C28/021 ,  C23C28/023 ,  H01L21/02562 ,  H01L29/66068 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L33/22 ,  H01L35/02 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34

Abstract: Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

Abstract translation: 公开了低电阻率欧姆接触的实施例。 在一些实施例中，制造低电阻率欧姆接触的方法包括提供半导体材料层并有意地使半导体材料层变粗糙以产生特征表面粗糙度。 该方法还包括在半导体材料层的表面上提供欧姆接触金属层，并在与半导体材料层相对的欧姆接触金属层的表面上提供扩散阻挡金属层。 以这种方式，可以增加半导体材料层和欧姆接触金属层之间的粘合力。