Abstract:
The present invention provides a process for preparing bisphenol A with a high conversion and selectivity by reacting phenol with acetone in the presence of both a polyorganosiloxane having a mercapto group-containing hydrocarbon group and an acid. It is preferable that the polyorganosiloxane having a mercapto group-containing hydrocarbon group and the acid is a polyorganosiloxane having both a mercapto group-containing hydrocarbon group and a sulfonic acid group.
Abstract:
A field effect transistor is disclosed. The field effect transistor includes: a semiconductor substrate having at least an upper face; a semiconductor layered structure, formed on the upper face of the semiconductor substrate, the semiconductor layered structure including a channel layer; a source electric formed on the semiconductor layered structure; a drain electrode formed on the semiconductor layered structure at a position apart from the source electrode in a first direction by a prescribed distance; and a gate electrode, formed on the semiconductor layered structure between the source electrode and the drain electrode. The channel layer includes: a first channel region positioned directly under the source electrode; a second channel region positioned directly under the drain electrode; a third channel region which is adjacent to the first channel region and which is not positioned directly under the gate electrode; a fourth channel region which is adjacent to the second channel region and which is not positioned directly under the gate electrode; and a plurality of stripe-like middle channel regions for connecting the third channel region to the fourth channel region.
Abstract:
A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.
Abstract:
A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.
Abstract:
According to one embodiment, a transmitting apparatus includes a generation unit, a division unit, an imparting unit and a transmitting unit. The generation unit generates first control information in accordance with a first information format. The division unit divides the first control information into control information pieces in accordance with information format divisions into which the first information format is divided and which include respective pointer regions, each of the information format divisions having a same data length as a second information format. The imparting unit imparts, to the pointer region of each of the information format divisions, a pointer indicating a wireless communication resource used to transmit one of the control information pieces corresponding to one of the information format divisions other than the each control information format division. The transmitting unit transmits the control information pieces.
Abstract:
The present invention provides a polyvinyl alcohol-based resin composition having less coloration from melt processing and having high aging stability of the melt viscosity comprising a polyvinyl alcohol-based rein having a structural unit represented by the following formula (1) and having an absorbance of 0.1 to 0.3 of 280 nm in an ultraviolet absorbance spectrum as a 4 mass % aqueous solution, a carboxylic acid and an alkaline (earth) metal salt, wherein when an aqueous solution of the polyvinyl alcohol-based resin composition is prepared so as to have a content of the polyvinyl alcohol-based resin of 4 mass %, the pH of the aqueous solution at 20° C. is from 5.5 to 7: wherein R1, R2 and R3 independently represent a hydrogen atom or an organic group, X represents a single bond or a bonding chain, and R4, R5 and R6 independently represent a hydrogen atom or an organic group.
Abstract:
The present invention relates to an improvement in a lithium ion secondary battery including a positive electrode, a negative electrode, a separator, a non-aqueous electrolyte, and a porous film formed on at least one electrode surface. The porous film includes inorganic compound particles and polyvinylidene fluoride. The viscosity of the N-methyl-2-pyrrolidone solution dissolving 8 wt % polyvinylidene fluoride is 600 to 2400 mPa·s at 25° C., and the amount of the polyvinylidene fluoride in the porous film is 1 to 10 parts by weight per 100 parts by weight of the inorganic compound particles.
Abstract:
A non-aqueous electrolyte secondary battery has at least negative electrode, a positive electrode, and a separator between the positive electrode and negative electrode. Negative electrode has columnar first negative electrode active materials that are discretely formed on the outer peripheral surface of negative electrode current collector in the winding direction and can reversibly insert and extract lithium ions, and columnar second negative electrode active materials discretely formed on the inner peripheral surface. The positive electrode has positive electrode mixture layers containing a positive electrode active material capable of reversibly inserting and extracting lithium ions, on both surfaces of a positive electrode current collector. The difference between the porosity generated between first negative electrode active materials in negative electrode and that generated between the second negative electrode active materials in winding is set within 1.1%.
Abstract:
A lithium ion secondary battery includes a positive electrode containing a composite lithium oxide, a negative electrode capable of absorbing and desorbing lithium ions, a sheet-like separator interposed between the positive electrode and the negative electrode, a non-aqueous electrolyte and a porous electron-insulating film attached to the surface of the negative electrode. The sheet-like separator is a monolayer film made of polypropylene resin or a multilayer film whose layer to be in contact with the positive electrode is made of polypropylene resin. The porous electron-insulating film includes an inorganic oxide filler and a binder. The inorganic oxide filler contains aluminum oxide or magnesium oxide. The sheet-like separator has a thickness not less than 1.5 times the thickness of the porous electron-insulating film.
Abstract:
A non-aqueous electrolyte secondary battery including: a positive electrode; a negative electrode; a separator interposed between the positive electrode and the negative electrode; a non-aqueous electrolyte; and a porous insulating film adhered to a surface of at least one selected from the group consisting of the positive electrode and the negative electrode, the porous insulating film including an inorganic oxide filler and a film binder, wherein the ratio R of actual volume to apparent volume of the separator is not less than 0.4 and not greater than 0.7, and wherein the ratio R and a porosity P of the porous insulating film satisfy the relational formula: −0.10≦R−P≦0.30.