公开(公告)号：US20110175967A1

公开(公告)日：2011-07-21

申请号：US13004203

申请日：2011-01-11

Applicant: Osamu MACHIDA ,  Yoshikazu AKIYAMA ,  Keiji UEDA ,  Akira SHIMOFUKU

Inventor： Osamu MACHIDA ,  Yoshikazu AKIYAMA ,  Keiji UEDA ,  Akira SHIMOFUKU

IPC: B41J2/04 ,  B05D5/12

CPC classification number: B41J2/14233 ,  H01L41/0805 ,  H01L41/0926 ,  H01L41/318

Abstract: A method for manufacturing an electromechanical transducer film including a lower electrode and plural layers of a sol-gel solution film formed on the lower electrode by an inkjet method, the method including the steps of a) modifying a surface of the lower electrode, b) forming a first sol-gel solution film on the surface of the lower electrode by ejecting droplets of a sol-gel solution to the surface of the lower electrode, and c) forming a second sol-gel solution film on the first sol-gel solution film by ejecting droplets of the sol-gel solution to a surface of the first sol-gel solution film. Adjacent dots formed on the surface of the lower electrode by the droplets ejected in step b) overlap each other. Adjacent dots formed on the surface of the first sol-gel solution film by the droplets ejected in step c) do not overlap each other.

Abstract translation: 一种制造机电换能器薄膜的方法，所述机电换能器薄膜包括下电极和通过喷墨方法形成在所述下电极上的多层溶胶 - 凝胶溶液膜，所述方法包括以下步骤：a）修改所述下电极的表面，b） 通过将溶胶 - 凝胶溶液的液滴喷射到下电极的表面，在下电极的表面上形成第一溶胶 - 凝胶溶液膜，和c）在第一溶胶 - 凝胶溶液上形成第二溶胶 - 凝胶溶液膜 通过将溶胶 - 凝胶溶液的液滴喷射到第一溶胶 - 凝胶溶液膜的表面上。 在步骤b）中喷射的液滴在下电极的表面上形成的相邻点彼此重叠。 在步骤c）中喷射的液滴在第一溶胶 - 凝胶溶液膜的表面上形成的相邻点彼此不重叠。

公开(公告)号：US07868353B2

公开(公告)日：2011-01-11

申请号：US12389027

申请日：2009-02-19

Applicant: Osamu Machida ,  Mamoru Tsuruya

Inventor： Osamu Machida ,  Mamoru Tsuruya

IPC: H01L29/66

CPC classification number: H01L29/7787 ,  H01L27/0727 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/8124

Abstract: A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a surface of the main semiconductor region are two main electrodes to be coupled to an electric circuit for switching control, two gate electrodes for individually controlling current flow between the main electrodes through the current-carrying channel, and two diode-forming electrodes electrically connected respectively to the two main electrodes. The device operates in either Switch On Mode, Switch Off Mode, Negative Current Mode, or Positive Current Mode depending upon voltages applied to the two gate electrodes.

Abstract translation: 一种单片开关装置，其包括：主半导体区域，其被配置为提供如二维电子气体形式的载流通道。 对称地设置在主半导体区域的表面上的两个主要电极被耦合到用于切换控制的电路，两个用于单独控制通过载流通道的主电极之间的电流流动的栅电极和两个二极管形成电极 电连接到两个主电极。 根据施加到两个栅电极的电压，器件工作在开启模式，关断模式，负电流模式或正电流模式。

公开(公告)号：US07859018B2

公开(公告)日：2010-12-28

申请号：US11490328

申请日：2006-07-20

Applicant: Shinichi Iwakami ,  Osamu Machida

Inventor： Shinichi Iwakami ,  Osamu Machida

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L29/41766 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/812

Abstract: A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.

Abstract translation: 一种具有通过缓冲区形成在硅衬底上的GaN基主半导体区的半导体器件。 源极，漏极和栅电极形成在主半导体区域上，背面电极形成在衬底的背面。 衬底由具有相反导电类型的两个半导体区域构成，其间具有pn结，其有利于漏极和背电极之间更高的耐压能力。

公开(公告)号：US07852137B2

公开(公告)日：2010-12-14

申请号：US12343081

申请日：2008-12-23

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H03K17/687

CPC classification number: H03K17/6874 ,  H01L27/0605 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/7838 ,  H01L29/812 ,  H01L29/872 ,  H03K17/10 ,  H03K17/567 ,  H03K17/74 ,  H03K2017/6875

Abstract: A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.

Abstract translation: 一种能够对电路进行双向开 - 关切换控制的装置。 包括连接在设备的一对终端之间的通常的HEMT。 HEMT与一对端子之间连接一个具有相对较低抗电压强度的常闭MOSFET，以及HEMT与另一个端子对之间的另一个类似的MOSFET。 二极管与每个MOSFET反并联连接，另外两个二极管分别连接在HEMT的栅极和一对端子之间。 整个开关装置通常关闭。

公开(公告)号：US07825435B2

公开(公告)日：2010-11-02

申请号：US12015067

申请日：2008-01-16

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/80

CPC classification number: H01L27/0605 ,  H01L25/18 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/567 ,  H03K17/74 ,  H01L2924/00

Abstract: A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connected to the gate, and its cathode to the source, of the HEMT. This HEMT is normally on. The reverse voltage withstanding capability of the complete device depends upon that between the drain and gate of the HEMT.

Abstract translation: 硅制造的低电压肖特基势垒二极管与由氮化物半导体制成的高抗电压强度的高电子迁移率晶体管串联组合，氮化物半导体的带隙比硅更宽。 肖特基势垒二极管的阳极连接到HEMT的栅极，其阴极连接到源极。 这个HEMT通常是打开的。 整个器件的反向耐压能力取决于HEMT的漏极和栅极之间的电压。

公开(公告)号：US20100155780A1

公开(公告)日：2010-06-24

申请号：US12640560

申请日：2009-12-17

Applicant: Osamu MACHIDA ,  Akio IWABUCHI

Inventor： Osamu MACHIDA ,  Akio IWABUCHI

IPC: H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域，源电极和漏电极，具有常关特性的栅电极，栅电极被设置 在半导体区域的主表面之上，同时在其间插入p型材料膜，并且布置在源电极和漏极之间，以及设置在半导体区域的主表面上的第四电极，并且布置在 栅电极和漏电极。

公开(公告)号：US07651197B2

公开(公告)日：2010-01-26

申请号：US11314741

申请日：2005-12-22

Applicant: Takao Umeda ,  Osamu Machida ,  Jun Nagata

Inventor： Takao Umeda ,  Osamu Machida ,  Jun Nagata

IPC: B41J2/04 ,  H01L41/22 ,  H01L21/30 ,  H01L21/46 ,  H04R17/00

CPC classification number: B41J2/14274 ,  B41J2/1612 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1643 ,  B41J2/1646 ,  B41J2002/14403 ,  B41J2202/20 ,  B41J2202/21 ,  Y10T29/42

Abstract: In a method of manufacturing an inkjet head, a silicon dioxide (SiO2) layer is produced on the surface of first silicon member formed from single-crystal silicon. Next, a glass layer formed of borosilicate glass or the like is sputtered onto the surface of the silicon dioxide (SiO2) layer. A silicon oxide (SiOx, x

Abstract translation: 在制造喷墨头的方法中，在由单晶硅形成的第一硅部件的表面上产生二氧化硅（SiO 2）层。 接下来，将由硼硅酸盐玻璃等形成的玻璃层溅射到二氧化硅（SiO 2）层的表面上。 然后在第二硅构件的表面上形成氧化硅（SiO x，x <2）层。 第一和第二硅构件通过用加热器在大约450℃下加热来结合在一起，因为在电极端子之间施加直流电压。 结果，在玻璃层和氧化硅（SiO x，x <2）层的界面处形成二氧化硅（SiO 2）层，阳极结合两层。

公开(公告)号：US20090206363A1

公开(公告)日：2009-08-20

申请号：US12389027

申请日：2009-02-19

Applicant: Osamu Machida ,  Mamoru Tsuruya

Inventor： Osamu Machida ,  Mamoru Tsuruya

IPC: H01L29/772

CPC classification number: H01L29/7787 ,  H01L27/0727 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/8124

Abstract: A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a surface of the main semiconductor region are two main electrodes to be coupled to an electric circuit for switching control, two gate electrodes for individually controlling current flow between the main electrodes through the current-carrying channel, and two diode-forming electrodes electrically connected respectively to the two main electrodes. The device operates in either Switch On Mode, Switch Off Mode, Negative Current Mode, or Positive Current Mode depending upon voltages applied to the two gate electrodes.

Abstract translation: 一种单片开关装置，其包括：主半导体区域，其被配置为提供如二维电子气体形式的载流通道。 对称地设置在主半导体区域的表面上的两个主要电极被耦合到用于切换控制的电路，两个用于单独控制通过载流通道的主电极之间的电流流动的栅电极和两个二极管形成电极 电连接到两个主电极。 根据施加到两个栅电极的电压，器件工作在开启模式，关断模式，负电流模式或正电流模式。

公开(公告)号：US07226150B2

公开(公告)日：2007-06-05

申请号：US10890261

申请日：2004-07-14

Applicant: Yasuhiro Yoshimura ,  Jun Nagata ,  Osamu Machida ,  Tatsuya Nagata

Inventor： Yasuhiro Yoshimura ,  Jun Nagata ,  Osamu Machida ,  Tatsuya Nagata

IPC: B41J2/045

CPC classification number: B41J2/14274 ,  B41J2002/14419

Abstract: An inkjet head is provided and includes: a chamber substrate for forming an ink flow passage; a diaphragm substrate including a diaphragm for pressurizing a pressure chamber disposed in the chamber substrate; and a nozzle substrate for jetting ink pressurized by the diaphragm, wherein the diaphragm substrate is made of silicon, the diaphragm is made of a material selected from the group of silicon oxide film and metal film, and the diaphragm is formed in the diaphragm substrate. A method of manufacturing the inkjet head is also provided.

Abstract translation: 提供一种喷墨头，包括：用于形成油墨流动通道的室基板; 膜片基板，包括用于对设置在所述室基板中的压力室进行加压的隔膜; 以及用于喷射由所述隔膜加压的墨的喷嘴基板，其中所述隔膜基板由硅制成，所述隔膜由选自氧化硅膜和金属膜的材料制成，并且所述隔膜形成在所述隔膜基板中。 还提供了制造喷墨头的方法。

公开(公告)号：US07077511B2

公开(公告)日：2006-07-18

申请号：US10647797

申请日：2003-08-26

Applicant: Osamu Machida ,  Tomohiko Koda ,  Satoru Tobita ,  Yoshitaka Akiyama ,  Toshiharu Sumiya ,  Yoshikane Matsumoto

Inventor： Osamu Machida ,  Tomohiko Koda ,  Satoru Tobita ,  Yoshitaka Akiyama ,  Toshiharu Sumiya ,  Yoshikane Matsumoto

IPC: B41J2/045 ,  B21D53/76

CPC classification number: B41J2/1623 ,  B41J2/14274 ,  B41J2/1612 ,  B41J2/1632 ,  B41J2002/14403 ,  Y10T29/49401

Abstract: A chamber support plate of an inkjet head is formed as a member different from a housing. The chamber support plate is formed with a plurality of grooves at high density by a dicing saw or the like. Piezoelectric elements are inserted into the grooves and adhered to a chamber plate. The plurality of grooves define comb teeth portions, which support the chamber plate at positions between adjacent piezoelectric elements.